2SB1085晶体三极管规格书应用电路货源供应商报价-IC资料网

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2SB108晶体管资料

2SB108别名：2SB108三极管、2SB108晶体管、2SB108晶体三极管
2SB108生产厂家：日本日电公司
2SB108制作材料：Ge-PNP
2SB108性质：低频或音频放大（LF）_输出极（E）
2SB108封装形式：直插封装
2SB108极限工作电压：40V
2SB108最大电流允许值：0.5A
2SB108最大工作频率：<1MHZ或未知
2SB108引脚数：2
2SB108最大耗散功率：0.5W
2SB108放大倍数：
2SB108图片代号：D-90
2SB108vtest：40
2SB108htest：999900
2SB108atest：0.5
2SB108wtest：0.5

2SB108代换 2SB108用什么型号代替：AD162,AD262,2SB493,3AX55A,

型号	功能描述	生产厂家企业	LOGO
2SB108040ML	SCHOTTKY BARRIER DIODE CHIPS DESCRIPTION ➤ 2SB108040ML is a schottky barrier diode chips fabricated in silicon epitaxial planar technology; ➤ Low power losses, high efficiency; ➤ Guard ring construction for transient protection; ➤ High ESD capability; ➤ High surge capability; ➤ Packaged products are widely use	SILAN 士兰微	SILAN
2SB108060ML	SCHOTTKY BARRIER DIODE CHIPS DESCRIPTION ➤ 2SB108060ML is a schottky barrier diode chips fabricated in silicon epitaxial planar technology; ➤ Low power losses, high efficiency; ➤ Guard ring construction for transient protection; ➤ High ESD capability; ➤ High surge capability; ➤ Packaged products are widely use	SILAN 士兰微	SILAN
2SB108100MA	LOW IR SCHOTTKY BARRIER DIODE CHIPS DESCRIPTION ➤ 2SB108100MA is a schottky barrier diode chips fabricated in silicon epitaxial planar technology; ➤ Due to special schottky barrier structure, the chips have very low reverse leakage current ( typical IR=0.002mA@ Vr=100V ) and maximum 150°C opera	SILAN 士兰微	SILAN
2SB1085	Silicon PNP Power Transistors DESCRIPTION • With TO-220 package • Complement to type 2SD1562 • Low collector saturation voltage APPLICATIONS • Designed for use in low frequency power amplifier applications	JMNIC 锦美电子	JMNIC
2SB1085	Silicon PNP Power Transistors DESCRIPTION • With TO-220 package • Complement to type 2SD1562 • Low collector saturation voltage APPLICATIONS • Designed for use in low frequency power amplifier applications	SAVANTIC	SAVANTIC
2SB1085	TAPED POWER TRANSISTOR PACKAGE FOR USE WITH AN AUTOMATIC PLACEMENT MACHINE Epitaxial Planar NPN Silicon Transistor TAPED POWER TRANSISTOR PACKAGE FOR USE WITH AN AUTOMATIC PLACEMENT MACHINE)	ROHM 罗姆	ROHM
2SB1085	Silicon PNP Power Transistors DESCRIPTION • With TO-220 package • Complement to type 2SD1562 • Low collector saturation voltage APPLICATIONS • Designed for use in low frequency power amplifier applications	ISC 无锡固电	ISC
2SB1085	Silicon PNP Power Transistor DESCRIPTION • Collector-Emitter Breakdown Voltage- :V(BR)CEO=-120V(Min) • Wide Area of Safe Operation • Complement to Type 2SD1562 APPLICATIONS • Designed for low frequency power amplifier applications.	NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司	NJSEMI
2SB1085A	Silicon PNP Power Transistors DESCRIPTION • With TO-220 package • Complement to type 2SD1562A • Low collector saturation voltage APPLICATIONS • Designed for use in low frequency power amplifier applications	ISC 无锡固电	ISC
2SB1085A	TAPED POWER TRANSISTOR PACKAGE FOR USE WITH AN AUTOMATIC PLACEMENT MACHINE Epitaxial Planar NPN Silicon Transistor TAPED POWER TRANSISTOR PACKAGE FOR USE WITH AN AUTOMATIC PLACEMENT MACHINE)	ROHM 罗姆	ROHM
2SB1085A	Silicon PNP Power Transistors DESCRIPTION • With TO-220 package • Complement to type 2SD1562A • Low collector saturation voltage APPLICATIONS • Designed for use in low frequency power amplifier applications	SAVANTIC	SAVANTIC
2SB1085A	Epitaxial Planar PNP Silicon Transistor Epitaxial Planar NPN Silicon Transistor TAPED POWER TRANSISTOR PACKAGE FOR USE WITH AN AUTOMATIC PLACEMENT MACHINE)	ROHM 罗姆	ROHM
2SB1085A	Silicon PNP Power Transistors DESCRIPTION • With TO-220 package • Complement to type 2SD1562A • Low collector saturation voltage APPLICATIONS • Designed for use in low frequency power amplifier applications	JMNIC 锦美电子	JMNIC
2SB1086	Silicon PNP Power Transistors DESCRIPTION • With TO-126 package • Complement to type 2SD1563 • Low collector saturation voltage • Large current capability APPLICATIONS • Designed for use in low frequency power amplifier applications	SAVANTIC	SAVANTIC
2SB1086	Silicon PNP Power Transistors DESCRIPTION • With TO-126 package • Complement to type 2SD1563 • Low collector saturation voltage • Large current capability APPLICATIONS • Designed for use in low frequency power amplifier applications	JMNIC 锦美电子	JMNIC
2SB1086	Silicon PNP Power Transistors DESCRIPTION • With TO-126 package • Complement to type 2SD1563 • Low collector saturation voltage • Large current capability APPLICATIONS • Designed for use in low frequency power amplifier applications	ISC 无锡固电	ISC
2SB1086	Silicon PNP Power Transistor DESCRIPTION • Collector-Emitter Breakdown Voltage- : V(BR)CEO=-120V(Min) • Wide Area of Safe Operation • Complement to Type 2SD1563 APPLICATIONS • Designed for low frequency power amplifier applications.	NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司	NJSEMI
2SB1086A	Silicon PNP Power Transistors DESCRIPTION ·With TO-126 package ·Complement to type 2SD1563A ·Low collector saturation voltage ·Large current capability APPLICATIONS ·Designed for use in low frequency power amplifier applications	ISC 无锡固电	ISC
2SB1086A	Silicon PNP Power Transistors DESCRIPTION ·With TO-126 package ·Complement to type 2SD1563A ·Low collector saturation voltage ·Large current capability APPLICATIONS ·Designed for use in low frequency power amplifier applications	JMNIC 锦美电子	JMNIC
2SB1086A	Silicon PNP Power Transistors DESCRIPTION ·With TO-126 package ·Complement to type 2SD1563A ·Low collector saturation voltage ·Large current capability APPLICATIONS ·Designed for use in low frequency power amplifier applications	SAVANTIC	SAVANTIC
2SB1087	Silicon PNP Power Transistors DESCRIPTION • With TO-220C package • High DC current gain • DARLINGTON APPLICATIONS • For low frequency power amplifier and low speed power switching applications	JMNIC 锦美电子	JMNIC
2SB1087	Silicon PNP Power Transistors DESCRIPTION • With TO-220C package • High DC current gain • DARLINGTON APPLICATIONS • For low frequency power amplifier and low speed power switching applications	SAVANTIC	SAVANTIC
2SB1087	Silicon PNP Power Transistors DESCRIPTION • With TO-220C package • High DC current gain • DARLINGTON APPLICATIONS • For low frequency power amplifier and low speed power switching applications	ISC 无锡固电	ISC
2SB1087	Silicon PNP Darlington Power Transistor DESCRIPTION • Collector-Emitter Breakdown Voltage- :V(BR)CEO=-100V(Min) • High DC Current Gain- : hFE= 2000(Min)@ (VCE= -2V, lc= -2A) APPLICATIONS • Designed for low frequency power amplifiers and low speed switching applications.	NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司	NJSEMI
2SB108040ML	肖特基二极管芯片	SILAN 士兰微	SILAN
2SB108060ML	肖特基二极管芯片	SILAN 士兰微	SILAN
2SB108100MA	肖特基二极管芯片	SILAN 士兰微	SILAN
2SB1085	Silicon PNP Power Transistors 文件：95.55 Kbytes Page：3 Pages	SAVANTIC	SAVANTIC
2SB1085_15	Silicon PNP Power Transistors 文件：162.94 Kbytes Page：3 Pages	JMNIC 锦美电子	JMNIC
2SB1085_2014	Silicon PNP Power Transistors 文件：162.94 Kbytes Page：3 Pages	JMNIC 锦美电子	JMNIC
2SB1085A	Silicon PNP Power Transistors 文件：95.52 Kbytes Page：3 Pages	SAVANTIC	SAVANTIC
2SB1085A_15	Silicon PNP Power Transistors 文件：162.75 Kbytes Page：3 Pages	JMNIC 锦美电子	JMNIC
2SB1085A_2014	Silicon PNP Power Transistors 文件：162.75 Kbytes Page：3 Pages	JMNIC 锦美电子	JMNIC
2SB1086	Silicon PNP Power Transistors 文件：102.37 Kbytes Page：3 Pages	SAVANTIC	SAVANTIC
2SB1086_15	Silicon PNP Power Transistors 文件：152.33 Kbytes Page：3 Pages	JMNIC 锦美电子	JMNIC
2SB1086_2014	Silicon PNP Power Transistors 文件：152.33 Kbytes Page：3 Pages	JMNIC 锦美电子	JMNIC
2SB1086A	Silicon PNP Power Transistors 文件：102.15 Kbytes Page：3 Pages	SAVANTIC	SAVANTIC
2SB1086A_15	Silicon PNP Power Transistors 文件：152.2 Kbytes Page：3 Pages	JMNIC 锦美电子	JMNIC
2SB1086A_2014	Silicon PNP Power Transistors 文件：152.2 Kbytes Page：3 Pages	JMNIC 锦美电子	JMNIC
2SB1087	Silicon PNP Power Transistors 文件：90.2 Kbytes Page：3 Pages	SAVANTIC	SAVANTIC
2SB1087_15	Silicon PNP Power Transistors 文件：151.94 Kbytes Page：3 Pages	JMNIC 锦美电子	JMNIC
2SB1087_2014	Silicon PNP Power Transistors 文件：151.94 Kbytes Page：3 Pages	JMNIC 锦美电子	JMNIC
2SB1089	isc Silicon PNP Power Transistor 文件：154.29 Kbytes Page：2 Pages	ISC 无锡固电	ISC
2SB1089	Silicon PNP Power Transistor 文件：126.1 Kbytes Page：2 Pages	NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司	NJSEMI

2SB108产品属性

类型
描述
型号
2SB108
制造商
SILAN
制造商全称
Silan Microelectronics Joint-stock
功能描述
SCHOTTKY BARRIER DIODE CHIPS

2SB108供应商更多...

更新时间：2025-12-25 10:50:00

IC供应商	芯片型号	品牌	批号	封装	库存	备注	价格
深圳市一线半导体有限公司	2SB1085	HITACHI	24+		60000		询价
深圳市创新迹电子有限公司	2SB1086	FSC	22+	TO126	20000	公司只有原装品质保证	询价
深圳市腾亿芯科技有限公司	2SB108A	ST	25+	CAN to-39	16900	原装，请咨询	询价
深圳市鹏和科技有限公司	2SB1089	UTG	24+	89-223-252	5000	只做原装公司现货	询价
深圳市富芯乐电子科技有限公司	2SB1086A-Q	ROHM	24+	TO-126	5000	只做原装正品现货欢迎来电查询15919825718	询价
深圳市河锋鑫科技有限公司	2SB1085A	ROHM/罗姆	22+	TO-220	6000	十年配单,只做原装	询价
深圳市利加科技有限公司	2SB1089	NEC	16+	TO-220	100000	全新原装现货	询价
深圳市昌和盛利电子有限公司	2SB1086A	ROHM	NEW	TO-126	9526	代理全系列销售,全新原装正品,价格优势,长期供应,量大可订	询价
深圳市威尔健半导体有限公司	2SB1085A	ROHM/罗姆	23+	TO220	50000	全新原装正品现货,支持订货	询价
贸泽芯城（深圳）电子科技有限公司	2SB1085A	ROHM/罗姆	23+	TO-220	33400	原厂授权代理,海外优势订货渠道。可提供大量库存,详	询价

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2SB1386-P-PNP硅外延晶体管
2SB1386-P :PNP硅外延晶体管的特点如下： ·低集电极饱和电压 ·Execllent电流增益特性 ·无铅完成/符合RoHS（“P”字后缀指定符合RoHS标准。见订购信息） ·环氧符合UL 94V -0阻燃等级 · Moisure敏感度等级1 2SB1386-P/2SB1386-Q/2SB1386-R 是微型商业组件公司的产品型号
2012-11-9

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2SB108晶体管资料

2SB108产品属性

2SB108供应商更多...

2SB108芯片相关品牌

2SB108规格书下载地址

2SB108参数引脚图相关

2SB108数据表相关新闻

2SB562L-TO92NLK-B-TG_UTC代理商

2SA928AL-TO92NLB-Y-TG

2SA812-T1B-A/S6 原装正品现货

2SB649 MOS

2SA2198

2SB1386-P-PNP硅外延晶体管

DdatasheetPDF页码索引