2SB108晶体管资料

  • 2SB108别名:2SB108三极管、2SB108晶体管、2SB108晶体三极管

  • 2SB108生产厂家:日本日电公司

  • 2SB108制作材料:Ge-PNP

  • 2SB108性质:低频或音频放大 (LF)_输出极 (E)

  • 2SB108封装形式:直插封装

  • 2SB108极限工作电压:40V

  • 2SB108最大电流允许值:0.5A

  • 2SB108最大工作频率:<1MHZ或未知

  • 2SB108引脚数:2

  • 2SB108最大耗散功率:0.5W

  • 2SB108放大倍数

  • 2SB108图片代号:D-90

  • 2SB108vtest:40

  • 2SB108htest:999900

  • 2SB108atest:.5

  • 2SB108wtest:.5

  • 2SB108代换 2SB108用什么型号代替:AD162,AD262,2SB493,3AX55A,

型号 功能描述 生产厂家&企业 LOGO 操作

SCHOTTKYBARRIERDIODECHIPS

DESCRIPTION ➤2SB108040MLisaschottkybarrierdiodechips fabricatedinsiliconepitaxialplanartechnology; ➤Lowpowerlosses,highefficiency; ➤Guardringconstructionfortransientprotection; ➤HighESDcapability; ➤Highsurgecapability; ➤Packagedproductsarewidelyuse

SILANSilan

士兰

SILAN

SCHOTTKYBARRIERDIODECHIPS

DESCRIPTION ➤2SB108060MLisaschottkybarrierdiodechips fabricatedinsiliconepitaxialplanartechnology; ➤Lowpowerlosses,highefficiency; ➤Guardringconstructionfortransientprotection; ➤HighESDcapability; ➤Highsurgecapability; ➤Packagedproductsarewidelyuse

SILANSilan

士兰

SILAN

LOWIRSCHOTTKYBARRIERDIODECHIPS

DESCRIPTION ➤2SB108100MAisaschottkybarrierdiodechips fabricatedinsiliconepitaxialplanartechnology; ➤Duetospecialschottkybarrierstructure,thechips haveverylowreverseleakagecurrent(typical IR=0.002mA@Vr=100V)andmaximum150°C opera

SILANSilan

士兰

SILAN

SiliconPNPPowerTransistors

DESCRIPTION •WithTO-220package •Complementtotype2SD1562 •Lowcollectorsaturationvoltage APPLICATIONS •Designedforuseinlowfrequencypoweramplifierapplications

JMNICQuanzhou Jinmei Electronic Co.,Ltd.

泉州锦美泉州锦美电子有限公司

JMNIC

SiliconPNPPowerTransistors

DESCRIPTION •WithTO-220package •Complementtotype2SD1562 •Lowcollectorsaturationvoltage APPLICATIONS •Designedforuseinlowfrequencypoweramplifierapplications

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

SiliconPNPPowerTransistors

DESCRIPTION •WithTO-220package •Complementtotype2SD1562 •Lowcollectorsaturationvoltage APPLICATIONS •Designedforuseinlowfrequencypoweramplifierapplications

SAVANTIC

Savantic, Inc.

SAVANTIC

TAPEDPOWERTRANSISTORPACKAGEFORUSEWITHANAUTOMATICPLACEMENTMACHINE

EpitaxialPlanarNPNSiliconTransistor TAPEDPOWERTRANSISTORPACKAGEFORUSEWITHANAUTOMATICPLACEMENTMACHINE)

ROHMRohm Semiconductor

罗姆罗姆半导体集团

ROHM

SiliconPNPPowerTransistor

DESCRIPTION •Collector-EmitterBreakdownVoltage-:V(BR)CEO=-120V(Min) •WideAreaofSafeOperation •ComplementtoType2SD1562 APPLICATIONS •Designedforlowfrequencypoweramplifierapplications.

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

NJSEMI

TAPEDPOWERTRANSISTORPACKAGEFORUSEWITHANAUTOMATICPLACEMENTMACHINE

EpitaxialPlanarNPNSiliconTransistor TAPEDPOWERTRANSISTORPACKAGEFORUSEWITHANAUTOMATICPLACEMENTMACHINE)

ROHMRohm Semiconductor

罗姆罗姆半导体集团

ROHM

SiliconPNPPowerTransistors

DESCRIPTION •WithTO-220package •Complementtotype2SD1562A •Lowcollectorsaturationvoltage APPLICATIONS •Designedforuseinlowfrequencypoweramplifierapplications

SAVANTIC

Savantic, Inc.

SAVANTIC

EpitaxialPlanarPNPSiliconTransistor

EpitaxialPlanarNPNSiliconTransistor TAPEDPOWERTRANSISTORPACKAGEFORUSEWITHANAUTOMATICPLACEMENTMACHINE)

ROHMRohm Semiconductor

罗姆罗姆半导体集团

ROHM

SiliconPNPPowerTransistors

DESCRIPTION •WithTO-220package •Complementtotype2SD1562A •Lowcollectorsaturationvoltage APPLICATIONS •Designedforuseinlowfrequencypoweramplifierapplications

JMNICQuanzhou Jinmei Electronic Co.,Ltd.

泉州锦美泉州锦美电子有限公司

JMNIC

SiliconPNPPowerTransistors

DESCRIPTION •WithTO-220package •Complementtotype2SD1562A •Lowcollectorsaturationvoltage APPLICATIONS •Designedforuseinlowfrequencypoweramplifierapplications

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

SiliconPNPPowerTransistors

DESCRIPTION •WithTO-126package •Complementtotype2SD1563 •Lowcollectorsaturationvoltage •Largecurrentcapability APPLICATIONS •Designedforuseinlowfrequencypoweramplifierapplications

SAVANTIC

Savantic, Inc.

SAVANTIC

SiliconPNPPowerTransistors

DESCRIPTION •WithTO-126package •Complementtotype2SD1563 •Lowcollectorsaturationvoltage •Largecurrentcapability APPLICATIONS •Designedforuseinlowfrequencypoweramplifierapplications

JMNICQuanzhou Jinmei Electronic Co.,Ltd.

泉州锦美泉州锦美电子有限公司

JMNIC

SiliconPNPPowerTransistors

DESCRIPTION •WithTO-126package •Complementtotype2SD1563 •Lowcollectorsaturationvoltage •Largecurrentcapability APPLICATIONS •Designedforuseinlowfrequencypoweramplifierapplications

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

SiliconPNPPowerTransistor

DESCRIPTION •Collector-EmitterBreakdownVoltage-:V(BR)CEO=-120V(Min) •WideAreaofSafeOperation •ComplementtoType2SD1563 APPLICATIONS •Designedforlowfrequencypoweramplifierapplications.

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

NJSEMI

SiliconPNPPowerTransistors

DESCRIPTION ·WithTO-126package ·Complementtotype2SD1563A ·Lowcollectorsaturationvoltage ·Largecurrentcapability APPLICATIONS ·Designedforuseinlowfrequencypoweramplifierapplications

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

SiliconPNPPowerTransistors

DESCRIPTION ·WithTO-126package ·Complementtotype2SD1563A ·Lowcollectorsaturationvoltage ·Largecurrentcapability APPLICATIONS ·Designedforuseinlowfrequencypoweramplifierapplications

JMNICQuanzhou Jinmei Electronic Co.,Ltd.

泉州锦美泉州锦美电子有限公司

JMNIC

SiliconPNPPowerTransistors

DESCRIPTION ·WithTO-126package ·Complementtotype2SD1563A ·Lowcollectorsaturationvoltage ·Largecurrentcapability APPLICATIONS ·Designedforuseinlowfrequencypoweramplifierapplications

SAVANTIC

Savantic, Inc.

SAVANTIC

SiliconPNPPowerTransistors

DESCRIPTION •WithTO-220Cpackage •HighDCcurrentgain •DARLINGTON APPLICATIONS •Forlowfrequencypoweramplifierandlowspeedpowerswitchingapplications

SAVANTIC

Savantic, Inc.

SAVANTIC

SiliconPNPPowerTransistors

DESCRIPTION •WithTO-220Cpackage •HighDCcurrentgain •DARLINGTON APPLICATIONS •Forlowfrequencypoweramplifierandlowspeedpowerswitchingapplications

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

SiliconPNPPowerTransistors

DESCRIPTION •WithTO-220Cpackage •HighDCcurrentgain •DARLINGTON APPLICATIONS •Forlowfrequencypoweramplifierandlowspeedpowerswitchingapplications

JMNICQuanzhou Jinmei Electronic Co.,Ltd.

泉州锦美泉州锦美电子有限公司

JMNIC

SiliconPNPDarlingtonPowerTransistor

DESCRIPTION •Collector-EmitterBreakdownVoltage-:V(BR)CEO=-100V(Min) •HighDCCurrentGain-:hFE=2000(Min)@(VCE=-2V,lc=-2A) APPLICATIONS •Designedforlowfrequencypoweramplifiersandlowspeedswitchingapplications.

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

NJSEMI

SiliconPNPPowerTransistors

文件:95.55 Kbytes Page:3 Pages

SAVANTIC

Savantic, Inc.

SAVANTIC

SiliconPNPPowerTransistors

文件:162.94 Kbytes Page:3 Pages

JMNICQuanzhou Jinmei Electronic Co.,Ltd.

泉州锦美泉州锦美电子有限公司

JMNIC

SiliconPNPPowerTransistors

文件:162.94 Kbytes Page:3 Pages

JMNICQuanzhou Jinmei Electronic Co.,Ltd.

泉州锦美泉州锦美电子有限公司

JMNIC

SiliconPNPPowerTransistors

文件:95.52 Kbytes Page:3 Pages

SAVANTIC

Savantic, Inc.

SAVANTIC

SiliconPNPPowerTransistors

文件:162.75 Kbytes Page:3 Pages

JMNICQuanzhou Jinmei Electronic Co.,Ltd.

泉州锦美泉州锦美电子有限公司

JMNIC

SiliconPNPPowerTransistors

文件:162.75 Kbytes Page:3 Pages

JMNICQuanzhou Jinmei Electronic Co.,Ltd.

泉州锦美泉州锦美电子有限公司

JMNIC

SiliconPNPPowerTransistors

文件:102.37 Kbytes Page:3 Pages

SAVANTIC

Savantic, Inc.

SAVANTIC

SiliconPNPPowerTransistors

文件:152.33 Kbytes Page:3 Pages

JMNICQuanzhou Jinmei Electronic Co.,Ltd.

泉州锦美泉州锦美电子有限公司

JMNIC

SiliconPNPPowerTransistors

文件:152.33 Kbytes Page:3 Pages

JMNICQuanzhou Jinmei Electronic Co.,Ltd.

泉州锦美泉州锦美电子有限公司

JMNIC

SiliconPNPPowerTransistors

文件:102.15 Kbytes Page:3 Pages

SAVANTIC

Savantic, Inc.

SAVANTIC

SiliconPNPPowerTransistors

文件:152.2 Kbytes Page:3 Pages

JMNICQuanzhou Jinmei Electronic Co.,Ltd.

泉州锦美泉州锦美电子有限公司

JMNIC

SiliconPNPPowerTransistors

文件:152.2 Kbytes Page:3 Pages

JMNICQuanzhou Jinmei Electronic Co.,Ltd.

泉州锦美泉州锦美电子有限公司

JMNIC

SiliconPNPPowerTransistors

文件:90.2 Kbytes Page:3 Pages

SAVANTIC

Savantic, Inc.

SAVANTIC

SiliconPNPPowerTransistors

文件:151.94 Kbytes Page:3 Pages

JMNICQuanzhou Jinmei Electronic Co.,Ltd.

泉州锦美泉州锦美电子有限公司

JMNIC

SiliconPNPPowerTransistors

文件:151.94 Kbytes Page:3 Pages

JMNICQuanzhou Jinmei Electronic Co.,Ltd.

泉州锦美泉州锦美电子有限公司

JMNIC

iscSiliconPNPPowerTransistor

文件:154.29 Kbytes Page:2 Pages

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

SiliconPNPPowerTransistor

文件:126.1 Kbytes Page:2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

NJSEMI

2SB108产品属性

  • 类型

    描述

  • 型号

    2SB108

  • 制造商

    SILAN

  • 制造商全称

    Silan Microelectronics Joint-stock

  • 功能描述

    SCHOTTKY BARRIER DIODE CHIPS

更新时间:2024-4-16 21:56:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
FAIRCHILD/仙童
23+
NA/
200
优势代理渠道,原装正品,可全系列订货开增值税票
ROHM
1738+
TO-220
8529
科恒伟业!只做原装正品,假一赔十!
ISC
20+
TO-126
15800
原装优势主营型号-可开原型号增税票
FSC
21+
TO126
800
原装现货假一赔十
FSC/Fairchild Semiconductor Co
21+
TO126
800
优势代理渠道,原装正品,可全系列订货开增值税票
HITACHI
08PB
60000
ROHM/罗姆
2022
TO220
80000
原装现货,OEM渠道,欢迎咨询
FAIRCHILD/仙童
TO-220
265209
假一罚十原包原标签常备现货!
120V1.5A20W
79
进口原装-真实库存-价实
RHM
1746+
TO220
8862
深圳公司现货!特价支持工厂客户!提供样品!

2SB108芯片相关品牌

  • ALLIED
  • DIODES
  • EATON
  • etc2
  • HARTING
  • Littelfuse
  • MERITEK
  • MOLEX1
  • NSC
  • RALTRON
  • SUMIDA
  • TEC

2SB108数据表相关新闻

  • 2SB562L-TO92NLK-B-TG_UTC代理商

    2SB562L-TO92NLK-B-TG_UTC代理商

    2023-3-14
  • 2SA928AL-TO92NLB-Y-TG

    2SA928AL-TO92NLB-Y-TG

    2023-2-1
  • 2SA812-T1B-A/S6 原装正品现货

    支持实单价格优势有单必成

    2022-3-30
  • 2SB649 MOS

    www.jskj-ic.com

    2021-9-10
  • 2SA2198

    2SA2198,全新原装当天发货或门市自取0755-82732291.

    2020-4-24
  • 2SB1386-P-PNP硅外延晶体管

    2SB1386-P:PNP硅外延晶体管的特点如下:·低集电极饱和电压·Execllent电流增益特性·无铅完成/符合RoHS(“P”字后缀指定符合RoHS标准。见订购信息)·环氧符合UL94V-0阻燃等级·Moisure敏感度等级12SB1386-P/2SB1386-Q/2SB1386-R是微型商业组件公司的产品型号

    2012-11-9