位置：首页 > IC中文资料第6248页 > 2SB1072(L)
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
Silicon PNP Triple Diffused Application Medium speed power amplifier | HitachiHitachi Semiconductor 日立日立公司 |   | ||
Silicon PNP Triple Diffused Application Medium speed power amplifier | HitachiHitachi Semiconductor 日立日立公司 | | ||
Silicon PNP Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -80V(Min) ·DC Current Gain- : hFE= 1000(Min)@ IC= -2A ·Fast switching speed ·Large current capacity APPLICATIONS ·Power amplifier applications ·Driver stage amplifier applications ·Medium speed power amplifier | ISC 无锡固电 | | ||
Silicon PNP Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -80V(Min) ·DC Current Gain- : hFE= 1000(Min)@ IC= -2A ·Fast switching speed ·Large current capacity APPLICATIONS ·Power amplifier applications ·Driver stage amplifier applications ·Medium speed power amplifier | ISC 无锡固电 | | ||
Silicon PNP Triple Diffused Application Medium speed power amplifier | HitachiHitachi Semiconductor 日立日立公司 | |
2SB1072(L)产品属性
- 类型
描述
- 型号
2SB1072(L)
- 功能描述
TRANSISTOR | BJT | DARLINGTON | PNP | 80V V(BR)CEO | 4A I(C) | TO-251AA
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
AO |
23+ |
TO263 |
69820 |
终端可以免费供样,支持BOM配单! |
|||
24+ |
N/A |
52000 |
一级代理-主营优势-实惠价格-不悔选择 |
||||
PASONIC |
2023+ |
SOT-89 |
58000 |
进口原装,现货热卖 |
|||
TOSHIBA/东芝 |
24+ |
TO-252 |
30000 |
只做正品原装现货 |
|||
CJ/长电 |
24+ |
SOT-89 |
60000 |
||||
CJ/长电 |
SOT-89 |
153358 |
原装正品力挺实单~支持美金交易和专票,深圳原厂现货~ |
||||
CJ/长电 |
21+ |
SOT-89 |
30000 |
百域芯优势 实单必成 可开13点增值税发票 |
|||
长晶科技 |
21+ |
SOT-89-3L |
50 |
只做原装鄙视假货15118075546 |
|||
PANASOIC |
22+ |
SOT89 |
8000 |
原装正品支持实单 |
|||
RENESAS/瑞萨 |
22+ |
SOT-252 |
100000 |
代理渠道/只做原装/可含税 |
2SB1072(L)规格书下载地址
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2SB1072(L)数据表相关新闻
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2SB1386-P :PNP硅外延晶体管的特点如下： ·低集电极饱和电压 ·Execllent电流增益特性 ·无铅完成/符合RoHS（“P”字后缀指定符合RoHS标准。见订购信息） ·环氧符合UL 94V -0阻燃等级 · Moisure敏感度等级1 2SB1386-P/2SB1386-Q/2SB1386-R 是微型商业组件公司的产品型号
2012-11-9
DdatasheetPDF页码索引
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