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2SB106晶体管资料
2SB106别名:2SB106三极管、2SB106晶体管、2SB106晶体三极管
2SB106生产厂家:日本日电公司
2SB106制作材料:Ge-PNP
2SB106性质:低频或音频放大 (LF)_开关管 (S)_功率放大 (L
2SB106封装形式:直插封装
2SB106极限工作电压:40V
2SB106最大电流允许值:1A
2SB106最大工作频率:<1MHZ或未知
2SB106引脚数:2
2SB106最大耗散功率:3W
2SB106放大倍数:
2SB106图片代号:D-90
2SB106vtest:40
2SB106htest:999900
- 2SB106atest:1
2SB106wtest:3
2SB106代换 2SB106用什么型号代替:AD162,AD262,2SB493,3AK34A,
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
Silicon PNP Triple Diffused Low Frequency Power Amplifier Silicon PNP Triple Diffused Low Frequency Power Amplifier | HitachiHitachi Semiconductor 日立日立公司 | |||
Si PNP Epitaxial Plannar Si PNP Epitaxial Plannar AF Output Amplifier | ETCList of Unclassifed Manufacturers 未分类制造商 | |||
Silicon PNP Power Transistors DESCRIPTION ·With TO-220Fa package ·Complement to type 2SD1499 ·Wide area of safe operation ·High fT APPLICATIONS ·For high power amplifier applications | ISC 无锡固电 | |||
High Power Amplifier Complementary Pair with 2SD1499 Silicon PNP triple diffusion planar type For high power amplification Complementary to 2SD1499 ■ Features • Extremely satisfactory linearity of the forward current transfer ratio hFE • Wide safe operation area • High transition frequency fT • Full-pack package which can | Panasonic 松下 | |||
Silicon PNP Power Transistors DESCRIPTION ·With TO-220Fa package ·Complement to type 2SD1499 ·Wide area of safe operation ·High fT APPLICATIONS ·For high power amplifier applications | JMNIC 锦美电子 | |||
Silicon PNP Power Transistors DESCRIPTION ·With TO-220Fa package ·Complement to type 2SD1499 ·Wide area of safe operation ·High fT APPLICATIONS ·For high power amplifier applications | SAVANTIC | |||
Silicon PNP Power Transistors DESCRIPTION • With TO-220 package • Complement to type 2SD1505 • Low collector saturation voltage APPLICATIONS • Designed for use in low frequency power amplifier applications | SAVANTIC | |||
Silicon PNP Power Transistor DESCRIPTION • Low Collector Saturation Voltage : VCE(sat)= -1.0V(Max)@lc= -2A • Wide Area of Safe Operation • Complement to Type 2SD1505 APPLICATIONS • Designed for low frequency power amplifier applications. | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | |||
Silicon PNP Power Transistors DESCRIPTION • With TO-220 package • Complement to type 2SD1505 • Low collector saturation voltage APPLICATIONS • Designed for use in low frequency power amplifier applications | JMNIC 锦美电子 | |||
Silicon PNP Power Transistors DESCRIPTION • With TO-220 package • Complement to type 2SD1505 • Low collector saturation voltage APPLICATIONS • Designed for use in low frequency power amplifier applications | ISC 无锡固电 | |||
TAPED POWER TRANSISTOR PACKAGE FOR USE WITH AN AUTOMATIC PLACEMENT MACHINE Epitaxial Planar NPN Silicon Transistor TAPED POWER TRANSISTOR PACKAGE FOR USE WITH AN AUTOMATIC PLACEMENT MACHINE) | ROHM 罗姆 | |||
Epitaxial Planar PNP Silicon Transistor
| ROHM 罗姆 | |||
Epitaxial Planar PNP Silicon Transistor Low Freq. Power Amp. Epitaxial Planar PNP Silicon Transistor | ROHM 罗姆 | |||
Silicon PNP Power Transistors DESCRIPTION ·With TO-126 package ·Complement to type 2SD1506 ·Low collector saturation voltage APPLICATIONS ·For use in low frequency power amplifier applications | ISC 无锡固电 | |||
Silicon PNP Power Transistors DESCRIPTION ·With TO-126 package ·Complement to type 2SD1506 ·Low collector saturation voltage APPLICATIONS ·For use in low frequency power amplifier applications | JMNIC 锦美电子 | |||
Silicon PNP Power Transistor DESCRIPTION • Low Collector Saturation Voltage : VCE(sat)= -1.0V(Max)@IC= -2A • Wide Area of Safe Operation • Complement to Type 2SD1506 APPLICATIONS • Designed for low frequency power amplifier applications. | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | |||
Silicon PNP Power Transistors DESCRIPTION ·With TO-126 package ·Complement to type 2SD1506 ·Low collector saturation voltage APPLICATIONS ·For use in low frequency power amplifier applications | SAVANTIC | |||
TRANSISTOR (MICRO NOTER DRIVE, HAMMER DRIVE, SWITCHING, POWER AMPLIFIER APPLICATIONS) Micro-Moter Drive, Hammer Drive Applications Switching Applications Power Amplifier Applications • High DC current gain: hFE = 2000 (min) (VCE = −2 V, IC = −1 A) • Low saturation voltage: VCE (sat) = −1.5 V (max) (IC = −1 A, IB = −1 mA) | TOSHIBA 东芝 | |||
PNP SILICON TRANSISTOR DESCRIPTION The 2SB1068 is designed for use in driver and output stages of audio frequency amplifiers. | NEC 瑞萨 | |||
TO-92 Plastic-Encapsulate Transistors TRANSISTOR (PNP) FEATURES ● Low Collector Saturation Voltage ● High DC Current Gain ● High Collector Power Dissipation ● Complementary To The 2SD1513 NPN Transistor | JIANGSU 长电科技 | |||
PNP Plastic Encapsulated Transistor FEATURES • Low Collector Saturation Voltage • High DC Current Gain • High Collector Power Dissipation • Complementary of the 2SD1513 | SECOS 喜可士 | |||
TO-92 Plastic-Encapsulate Transistors FEATURES Low Collector Saturation Voltage High DC Current Gain High Collector Power Dissipation Complementary To The 2SD1513 NPN Transistor | DGNJDZ 南晶电子 | |||
TO-92 Plastic-Encapsulate Transistors FEATURES Low Collector Saturation Voltage High DC Current Gain High Collector Power Dissipation Complementary To The 2SD1513 NPN Transistor | DGNJDZ 南晶电子 | |||
Silicon PNP Power Transistors DESCRIPTION • With TO-220 package • High speed switching • Low collector saturation voltage APPLICATIONS • For low-voltage switching applications | SAVANTIC | |||
Silicon PNP Power Transistors DESCRIPTION • With TO-220 package • High speed switching • Low collector saturation voltage APPLICATIONS • For low-voltage switching applications | JMNIC 锦美电子 | |||
Silicon PNP Power Transistors DESCRIPTION • With TO-220 package • High speed switching • Low collector saturation voltage APPLICATIONS • For low-voltage switching applications | ISC 无锡固电 | |||
Silicon PNP Power Transistors DESCRIPTION • With TO-220 package • High speed switching • Low collector saturation voltage APPLICATIONS • For low-voltage switching applications | ISC 无锡固电 | |||
Silicon PNP Power Transistors DESCRIPTION • With TO-220 package • High speed switching • Low collector saturation voltage APPLICATIONS • For low-voltage switching applications | JMNIC 锦美电子 | |||
Silicon PNP Power Transistors DESCRIPTION • With TO-220 package • High speed switching • Low collector saturation voltage APPLICATIONS • For low-voltage switching applications | SAVANTIC | |||
Silicon PNP Power Transistor 文件:126.19 Kbytes Page:2 Pages | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | |||
Silicon PNP Power Transistors 文件:117.33 Kbytes Page:3 Pages | SAVANTIC | |||
Trans GP BJT PNP 100V 5A 3-Pin(3+Tab) TO-220F-A1 | ETC 知名厂家 | ETC | ||
For High Power Amplification 文件:73.73 Kbytes Page:3 Pages | Panasonic 松下 | |||
Silicon PNP Power Transistors 文件:165.62 Kbytes Page:3 Pages | JMNIC 锦美电子 | |||
Silicon PNP Power Transistors 文件:165.62 Kbytes Page:3 Pages | JMNIC 锦美电子 | |||
封装/外壳:TO-220-3 整包 包装:散装 描述:TRANS PNP 100V 5A TO220F-A1 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个 | Panasonic 松下 | |||
Silicon PNP Power Transistors 文件:92.22 Kbytes Page:3 Pages | SAVANTIC | |||
Low Freq. Power Amp. Epitaxial Planar PNP Silicon Transistor | ROHM 罗姆 | |||
Silicon PNP Power Transistors 文件:155 Kbytes Page:3 Pages | JMNIC 锦美电子 | |||
Silicon PNP Power Transistors 文件:155 Kbytes Page:3 Pages | JMNIC 锦美电子 | |||
Silicon PNP Power Transistors 文件:107 Kbytes Page:3 Pages | SAVANTIC | |||
Silicon PNP Power Transistors 文件:160.14 Kbytes Page:3 Pages | JMNIC 锦美电子 | |||
Silicon PNP Power Transistors 文件:160.14 Kbytes Page:3 Pages | JMNIC 锦美电子 | |||
Epitaxial Planar PNP Silicon Transistors | ROHM 罗姆 | |||
Epitaxial Planar PNP Silicon Transistors 文件:46.71 Kbytes Page:1 Pages | ROHM 罗姆 | |||
Micro-Moter Drive, Hammer Drive Applications Switching Applications Power Amplifier Applications 文件:179.1 Kbytes Page:5 Pages | TOSHIBA 东芝 | |||
Silicon PNP Epitaxial Type (Darlington Power Transistor) 文件:192.11 Kbytes Page:5 Pages | TOSHIBA 东芝 | |||
Silicon PNP Epitaxial Type (Darlington Power Transistor) 文件:192.11 Kbytes Page:5 Pages | TOSHIBA 东芝 | |||
Micro-Moter Drive, Hammer Drive Applications Switching Applications Power Amplifier Applications 文件:179.1 Kbytes Page:5 Pages | TOSHIBA 东芝 | |||
PNP Plastic Encapsulated Transistor 文件:84.29 Kbytes Page:1 Pages | SECOS 喜可士 | |||
Silicon PNP Power Transistors 文件:97.55 Kbytes Page:3 Pages | SAVANTIC | |||
Silicon PNP Power Transistor 文件:127.98 Kbytes Page:2 Pages | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | |||
Silicon PNP Power Transistors 文件:166.26 Kbytes Page:3 Pages | JMNIC 锦美电子 | |||
Silicon PNP Power Transistors 文件:166.26 Kbytes Page:3 Pages | JMNIC 锦美电子 | |||
Silicon PNP Power Transistors 文件:97.55 Kbytes Page:3 Pages | SAVANTIC |
2SB106产品属性
- 类型
描述
- 型号
2SB106
- 制造商
HITACHI
- 制造商全称
Hitachi Semiconductor
- 功能描述
Silicon PNP Triple Diffused Low Frequency Power Amplifier
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
NEC |
24+ |
NA/ |
3745 |
原装现货,当天可交货,原型号开票 |
|||
ROHM/罗姆 |
25+ |
TO-220 |
860000 |
明嘉莱只做原装正品现货 |
|||
TOSHIBA |
25+ |
TO-126 |
5294 |
百分百原装正品 真实公司现货库存 本公司只做原装 可 |
|||
TOSHIBA |
25+ |
TO-126 |
30000 |
代理全新原装现货,价格优势 |
|||
ISC |
20+ |
TO-126 |
15800 |
原装优势主营型号-可开原型号增税票 |
|||
MAT |
23+ |
TO-220 |
20000 |
原厂授权代理,海外优势订货渠道。可提供大量库存,详 |
|||
MAT |
24+ |
1841 |
|||||
FAIRCHILD/仙童 |
23+ |
TO-220 |
50000 |
全新原装正品现货,支持订货 |
|||
ROHM |
05+ |
TO-126 |
3058 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
sanyo |
24+ |
8858 |
公司原厂原装现货假一罚十!特价出售!强势库存! |
2SB106芯片相关品牌
2SB106规格书下载地址
2SB106参数引脚图相关
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2SB106数据表相关新闻
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2SB1386-P :PNP硅外延晶体管的特点如下: ·低集电极饱和电压 ·Execllent电流增益特性 ·无铅完成/符合RoHS(“P”字后缀指定符合RoHS标准。见订购信息) ·环氧符合UL 94V -0阻燃等级 · Moisure敏感度等级1 2SB1386-P/2SB1386-Q/2SB1386-R 是微型商业组件公司的产品型号
2012-11-9
DdatasheetPDF页码索引
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