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2SB106晶体管资料
2SB106别名:2SB106三极管、2SB106晶体管、2SB106晶体三极管
2SB106生产厂家:日本日电公司
2SB106制作材料:Ge-PNP
2SB106性质:低频或音频放大 (LF)_开关管 (S)_功率放大 (L
2SB106封装形式:直插封装
2SB106极限工作电压:40V
2SB106最大电流允许值:1A
2SB106最大工作频率:<1MHZ或未知
2SB106引脚数:2
2SB106最大耗散功率:3W
2SB106放大倍数:
2SB106图片代号:D-90
2SB106vtest:40
2SB106htest:999900
- 2SB106atest:1
2SB106wtest:3
2SB106代换 2SB106用什么型号代替:AD162,AD262,2SB493,3AK34A,
型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
---|---|---|---|---|
SiliconPNPTripleDiffusedLowFrequencyPowerAmplifier SiliconPNPTripleDiffusedLowFrequencyPowerAmplifier | HitachiHitachi, Ltd. 日立公司 | |||
SiPNPEpitaxialPlannar SiPNPEpitaxialPlannar AFOutputAmplifier | ETCList of Unclassifed Manufacturers 未分类制造商 | |||
SiliconPNPPowerTransistors DESCRIPTION ·WithTO-220Fapackage ·Complementtotype2SD1499 ·Wideareaofsafeoperation ·HighfT APPLICATIONS ·Forhighpoweramplifierapplications | SAVANTIC Savantic, Inc. | |||
SiliconPNPPowerTransistors DESCRIPTION ·WithTO-220Fapackage ·Complementtotype2SD1499 ·Wideareaofsafeoperation ·HighfT APPLICATIONS ·Forhighpoweramplifierapplications | JMNICQuanzhou Jinmei Electronic Co.,Ltd. 泉州锦美泉州锦美电子有限公司 | |||
SiliconPNPPowerTransistors DESCRIPTION ·WithTO-220Fapackage ·Complementtotype2SD1499 ·Wideareaofsafeoperation ·HighfT APPLICATIONS ·Forhighpoweramplifierapplications | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
HighPowerAmplifierComplementaryPairwith2SD1499 SiliconPNPtriplediffusionplanartype Forhighpoweramplification Complementaryto2SD1499 ■Features •ExtremelysatisfactorylinearityoftheforwardcurrenttransferratiohFE •Widesafeoperationarea •HightransitionfrequencyfT •Full-packpackagewhichcan | PanasonicPanasonic Corporation 松下松下电器 | |||
EpitaxialPlanarPNPSiliconTransistor
| ROHMRohm Semiconductor 罗姆罗姆半导体集团 | |||
SiliconPNPPowerTransistors DESCRIPTION •WithTO-220package •Complementtotype2SD1505 •Lowcollectorsaturationvoltage APPLICATIONS •Designedforuseinlowfrequencypoweramplifierapplications | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
SiliconPNPPowerTransistors DESCRIPTION •WithTO-220package •Complementtotype2SD1505 •Lowcollectorsaturationvoltage APPLICATIONS •Designedforuseinlowfrequencypoweramplifierapplications | JMNICQuanzhou Jinmei Electronic Co.,Ltd. 泉州锦美泉州锦美电子有限公司 | |||
SiliconPNPPowerTransistors DESCRIPTION •WithTO-220package •Complementtotype2SD1505 •Lowcollectorsaturationvoltage APPLICATIONS •Designedforuseinlowfrequencypoweramplifierapplications | SAVANTIC Savantic, Inc. | |||
TAPEDPOWERTRANSISTORPACKAGEFORUSEWITHANAUTOMATICPLACEMENTMACHINE EpitaxialPlanarNPNSiliconTransistor TAPEDPOWERTRANSISTORPACKAGEFORUSEWITHANAUTOMATICPLACEMENTMACHINE) | ROHMRohm Semiconductor 罗姆罗姆半导体集团 | |||
SiliconPNPPowerTransistor DESCRIPTION •LowCollectorSaturationVoltage:VCE(sat)=-1.0V(Max)@lc=-2A •WideAreaofSafeOperation •ComplementtoType2SD1505 APPLICATIONS •Designedforlowfrequencypoweramplifierapplications. | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | |||
SiliconPNPPowerTransistor DESCRIPTION •LowCollectorSaturationVoltage:VCE(sat)=-1.0V(Max)@IC=-2A •WideAreaofSafeOperation •ComplementtoType2SD1506 APPLICATIONS •Designedforlowfrequencypoweramplifierapplications. | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | |||
EpitaxialPlanarPNPSiliconTransistor LowFreq.PowerAmp. EpitaxialPlanarPNPSiliconTransistor | ROHMRohm Semiconductor 罗姆罗姆半导体集团 | |||
SiliconPNPPowerTransistors DESCRIPTION ·WithTO-126package ·Complementtotype2SD1506 ·Lowcollectorsaturationvoltage APPLICATIONS ·Foruseinlowfrequencypoweramplifierapplications | SAVANTIC Savantic, Inc. | |||
SiliconPNPPowerTransistors DESCRIPTION ·WithTO-126package ·Complementtotype2SD1506 ·Lowcollectorsaturationvoltage APPLICATIONS ·Foruseinlowfrequencypoweramplifierapplications | JMNICQuanzhou Jinmei Electronic Co.,Ltd. 泉州锦美泉州锦美电子有限公司 | |||
SiliconPNPPowerTransistors DESCRIPTION ·WithTO-126package ·Complementtotype2SD1506 ·Lowcollectorsaturationvoltage APPLICATIONS ·Foruseinlowfrequencypoweramplifierapplications | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
TRANSISTOR(MICRONOTERDRIVE,HAMMERDRIVE,SWITCHING,POWERAMPLIFIERAPPLICATIONS) Micro-MoterDrive,HammerDriveApplications SwitchingApplications PowerAmplifierApplications •HighDCcurrentgain:hFE=2000(min)(VCE=−2V,IC=−1A) •Lowsaturationvoltage:VCE(sat)=−1.5V(max) (IC=−1A,IB=−1mA) | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | |||
PNPSILICONTRANSISTOR DESCRIPTION The2SB1068isdesignedforuseindriverandoutputstagesofaudiofrequencyamplifiers. | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | |||
PNPPlasticEncapsulatedTransistor FEATURES •LowCollectorSaturationVoltage •HighDCCurrentGain •HighCollectorPowerDissipation •Complementaryofthe2SD1513 | SECOS SeCoS Halbleitertechnologie GmbH | |||
TO-92Plastic-EncapsulateTransistors TRANSISTOR(PNP) FEATURES ●LowCollectorSaturationVoltage ●HighDCCurrentGain ●HighCollectorPowerDissipation ●ComplementaryToThe2SD1513NPNTransistor | JIANGSU Jiangsu Changjiang Electronics Technology Co., Ltd | |||
TO-92Plastic-EncapsulateTransistors FEATURES LowCollectorSaturationVoltage HighDCCurrentGain HighCollectorPowerDissipation ComplementaryToThe2SD1513NPNTransistor | DGNJDZNanjing International Group Co 南晶电子东莞市南晶电子有限公司 | |||
TO-92Plastic-EncapsulateTransistors FEATURES LowCollectorSaturationVoltage HighDCCurrentGain HighCollectorPowerDissipation ComplementaryToThe2SD1513NPNTransistor | DGNJDZNanjing International Group Co 南晶电子东莞市南晶电子有限公司 | |||
SiliconPNPPowerTransistors DESCRIPTION •WithTO-220package •Highspeedswitching •Lowcollectorsaturationvoltage APPLICATIONS •Forlow-voltageswitchingapplications | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
SiliconPNPPowerTransistors DESCRIPTION •WithTO-220package •Highspeedswitching •Lowcollectorsaturationvoltage APPLICATIONS •Forlow-voltageswitchingapplications | JMNICQuanzhou Jinmei Electronic Co.,Ltd. 泉州锦美泉州锦美电子有限公司 | |||
SiliconPNPPowerTransistors DESCRIPTION •WithTO-220package •Highspeedswitching •Lowcollectorsaturationvoltage APPLICATIONS •Forlow-voltageswitchingapplications | SAVANTIC Savantic, Inc. | |||
SiliconPNPPowerTransistors DESCRIPTION •WithTO-220package •Highspeedswitching •Lowcollectorsaturationvoltage APPLICATIONS •Forlow-voltageswitchingapplications | JMNICQuanzhou Jinmei Electronic Co.,Ltd. 泉州锦美泉州锦美电子有限公司 | |||
SiliconPNPPowerTransistors DESCRIPTION •WithTO-220package •Highspeedswitching •Lowcollectorsaturationvoltage APPLICATIONS •Forlow-voltageswitchingapplications | SAVANTIC Savantic, Inc. | |||
SiliconPNPPowerTransistors DESCRIPTION •WithTO-220package •Highspeedswitching •Lowcollectorsaturationvoltage APPLICATIONS •Forlow-voltageswitchingapplications | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
SiliconPNPPowerTransistors 文件:117.33 Kbytes Page:3 Pages | SAVANTIC Savantic, Inc. | |||
ForHighPowerAmplification 文件:73.73 Kbytes Page:3 Pages | PanasonicPanasonic Corporation 松下松下电器 | |||
SiliconPNPPowerTransistor 文件:126.19 Kbytes Page:2 Pages | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | |||
SiliconPNPPowerTransistors 文件:165.62 Kbytes Page:3 Pages | JMNICQuanzhou Jinmei Electronic Co.,Ltd. 泉州锦美泉州锦美电子有限公司 | |||
SiliconPNPPowerTransistors 文件:165.62 Kbytes Page:3 Pages | JMNICQuanzhou Jinmei Electronic Co.,Ltd. 泉州锦美泉州锦美电子有限公司 | |||
封装/外壳:TO-220-3 整包 包装:散装 描述:TRANS PNP 100V 5A TO220F-A1 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个 | Panasonic Electronic Components Panasonic Electronic Components | |||
SiliconPNPPowerTransistors 文件:92.22 Kbytes Page:3 Pages | SAVANTIC Savantic, Inc. | |||
SiliconPNPPowerTransistors 文件:155 Kbytes Page:3 Pages | JMNICQuanzhou Jinmei Electronic Co.,Ltd. 泉州锦美泉州锦美电子有限公司 | |||
SiliconPNPPowerTransistors 文件:155 Kbytes Page:3 Pages | JMNICQuanzhou Jinmei Electronic Co.,Ltd. 泉州锦美泉州锦美电子有限公司 | |||
SiliconPNPPowerTransistors 文件:107 Kbytes Page:3 Pages | SAVANTIC Savantic, Inc. | |||
SiliconPNPPowerTransistors 文件:160.14 Kbytes Page:3 Pages | JMNICQuanzhou Jinmei Electronic Co.,Ltd. 泉州锦美泉州锦美电子有限公司 | |||
SiliconPNPPowerTransistors 文件:160.14 Kbytes Page:3 Pages | JMNICQuanzhou Jinmei Electronic Co.,Ltd. 泉州锦美泉州锦美电子有限公司 | |||
EpitaxialPlanarPNPSiliconTransistors 文件:46.71 Kbytes Page:1 Pages | ROHMRohm Semiconductor 罗姆罗姆半导体集团 | |||
Micro-MoterDrive,HammerDriveApplicationsSwitchingApplicationsPowerAmplifierApplications 文件:179.1 Kbytes Page:5 Pages | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | |||
SiliconPNPEpitaxialType(DarlingtonPowerTransistor) 文件:192.11 Kbytes Page:5 Pages | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | |||
SiliconPNPEpitaxialType(DarlingtonPowerTransistor) 文件:192.11 Kbytes Page:5 Pages | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | |||
Micro-MoterDrive,HammerDriveApplicationsSwitchingApplicationsPowerAmplifierApplications 文件:179.1 Kbytes Page:5 Pages | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | |||
PNPPlasticEncapsulatedTransistor 文件:84.29 Kbytes Page:1 Pages | SECOS SeCoS Halbleitertechnologie GmbH | |||
SiliconPNPPowerTransistors 文件:97.55 Kbytes Page:3 Pages | SAVANTIC Savantic, Inc. | |||
SiliconPNPPowerTransistor 文件:127.98 Kbytes Page:2 Pages | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | |||
SiliconPNPPowerTransistors 文件:166.26 Kbytes Page:3 Pages | JMNICQuanzhou Jinmei Electronic Co.,Ltd. 泉州锦美泉州锦美电子有限公司 | |||
SiliconPNPPowerTransistors 文件:166.26 Kbytes Page:3 Pages | JMNICQuanzhou Jinmei Electronic Co.,Ltd. 泉州锦美泉州锦美电子有限公司 | |||
SiliconPNPPowerTransistors 文件:97.55 Kbytes Page:3 Pages | SAVANTIC Savantic, Inc. |
2SB106产品属性
- 类型
描述
- 型号
2SB106
- 制造商
HITACHI
- 制造商全称
Hitachi Semiconductor
- 功能描述
Silicon PNP Triple Diffused Low Frequency Power Amplifier
IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
ROHM |
05+ |
TO-126 |
3058 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
22+ |
TO126 |
100000 |
代理渠道/只做原装/可含税 |
||||
ISC |
20+ |
TO-126 |
15800 |
原装优势主营型号-可开原型号增税票 |
|||
NXP/恩智浦 |
22+ |
TO-126 |
94107 |
||||
TOSHIBA |
2020+ |
TO-126 |
5294 |
百分百原装正品 真实公司现货库存 本公司只做原装 可 |
|||
ROHM |
1738+ |
TO-126 |
8529 |
科恒伟业!只做原装正品,假一赔十! |
|||
NEC |
23+ |
NA/ |
3745 |
原装现货,当天可交货,原型号开票 |
|||
TOSHIBA |
21+ |
TO126F |
5742 |
原装现货假一赔十 |
|||
TOSHIBA |
23+ |
TO-126 |
30000 |
代理全新原装现货,价格优势 |
|||
TOSHIBA/东芝 |
2021+ |
12000 |
2020 |
2SB106规格书下载地址
2SB106参数引脚图相关
- 5000
- 4921
- 4899
- 485接口
- 47471
- 4735
- 47301
- 4591
- 4536
- 4313
- 4069
- 4066
- 3q1
- 3g汽车
- 3579
- 35001
- 3477
- 31337
- 303c
- 2sc4226
- 2SB1090
- 2SB1089
- 2SB1087
- 2SB1086
- 2SB1085
- 2SB1079
- 2SB1077
- 2SB1075
- 2SB1073
- 2SB1072L,S
- 2SB1072
- 2SB1071A
- 2SB1071
- 2SB1070A
- 2SB1070
- 2SB107
- 2SB1069A
- 2SB1069
- 2SB1068
- 2SB1067
- 2SB1066M
- 2SB1066
- 2SB1065
- 2SB1064
- 2SB1063
- 2SB1062
- 2SB1061
- 2SB1060
- 2SB1059
- 2SB1058
- 2SB1057
- 2SB1056
- 2SB1055
- 2SB1054
- 2SB1053
- 2SB1052
- 2SB1051K
- 2SB1051
- 2SB1050
- 2SB105
- 2SB1049
- 2SB1048
- 2SB1047
- 2SB1046
- 2SB1045
- 2SB1044M
- 2SB1044
- 2SB1043
- 2SB1041
- 2SB1038
- 2SB1037
- 2SB1036
- 2SB1035
- 2SB1034
- 2SB1033
- 2SB1032
- 2SB1031
2SB106数据表相关新闻
2SB562L-TO92NLK-B-TG_UTC代理商
2SB562L-TO92NLK-B-TG_UTC代理商
2023-3-142SA928AL-TO92NLB-Y-TG
2SA928AL-TO92NLB-Y-TG
2023-2-12SA812-T1B-A/S6 原装正品现货
支持实单价格优势有单必成
2022-3-302SB649 MOS
www.jskj-ic.com
2021-9-102SA2198
2SA2198,全新原装当天发货或门市自取0755-82732291.
2020-4-242SB1386-P-PNP硅外延晶体管
2SB1386-P:PNP硅外延晶体管的特点如下:·低集电极饱和电压·Execllent电流增益特性·无铅完成/符合RoHS(“P”字后缀指定符合RoHS标准。见订购信息)·环氧符合UL94V-0阻燃等级·Moisure敏感度等级12SB1386-P/2SB1386-Q/2SB1386-R是微型商业组件公司的产品型号
2012-11-9
DdatasheetPDF页码索引
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