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2SB105晶体管资料
2SB105别名:2SB105三极管、2SB105晶体管、2SB105晶体三极管
2SB105生产厂家:日本日电公司
2SB105制作材料:Ge-PNP
2SB105性质:低频或音频放大 (LF)_输出极 (E)
2SB105封装形式:直插封装
2SB105极限工作电压:30V
2SB105最大电流允许值:0.5A
2SB105最大工作频率:<1MHZ或未知
2SB105引脚数:2
2SB105最大耗散功率:0.5W
2SB105放大倍数:
2SB105图片代号:D-90
2SB105vtest:30
2SB105htest:999900
- 2SB105atest:0.5
2SB105wtest:0.5
2SB105代换 2SB105用什么型号代替:AD162,AD262,2SB493,3AX52A,
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
Silicon PNP epitaxial planer type(For low-frequency amplification) ■ Features ● Low collector to emitter saturation voltage VCE(sat). ● Large collector current IC. ● M type package allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit board. | Panasonic 松下 | |||
Silicon PNP Power Transistors DESCRIPTION • With TO-220Fa package • Complement to type 2SD1480 • Low collector saturation voltage APPLICATIONS • For power amplifier applications | SAVANTIC | |||
Silicon PNP Power Transistors DESCRIPTION • With TO-220Fa package • Complement to type 2SD1480 • Low collector saturation voltage APPLICATIONS • For power amplifier applications | ISC 无锡固电 | |||
Silicon PNP Power Transistors DESCRIPTION • With TO-220Fa package • Complement to type 2SD1480 • Low collector saturation voltage APPLICATIONS • For power amplifier applications | JMNIC 锦美电子 | |||
Silicon PNP Power Transistor DESCRIPTION • Low Collector Saturation Voltage- : VCE(sat)= -2.0V(Max)@lc= -2A • Good Linearity of hFE • Complement to Type 2SD1480 APPLICATIONS • Designed for power amplifier applications | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | |||
Silicon PNP Power Transistor DESCRIPTION • Low Collector Saturation Voltage- : VCE(sat)= -2.0V(Max)@lc= -3A • Wide Area of Safe Operation • Complement to Type 2SD1485 APPLICATIONS • Designed for high power amplification. | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | |||
Silicon PNP Power Transistors DESCRIPTION • With TO-3PFa package • Complement to type 2SD1485 • High transition frequency • Wide area of safe operation APPLICATIONS • For high power amplifier applications | ISC 无锡固电 | |||
Silicon PNP Power Transistors DESCRIPTION • With TO-3PFa package • Complement to type 2SD1485 • High transition frequency • Wide area of safe operation APPLICATIONS • For high power amplifier applications | JMNIC 锦美电子 | |||
Silicon PNP Power Transistors DESCRIPTION • With TO-3PFa package • Complement to type 2SD1485 • High transition frequency • Wide area of safe operation APPLICATIONS • For high power amplifier applications | SAVANTIC | |||
Silicon PNP triple diffusion planar type Silicon PNP triple diffusion planar type For high power amplification Complementary to 2SD1485 ■ Features • Excellent collector current IC characteristics of forward current transfer ratio hFE • Wide safe operation area • High transition frequency fT • Full-pack package which can be install | Panasonic 松下 | |||
Silicon PNP Power Transistors DESCRIPTION • With TO-3PFa package • Complement to type 2SD1486 • High fT • Satisfactory linearity of hFE • Wide area of safe operation APPLICATIONS • For high power amplifier applications | SAVANTIC | |||
Silicon PNP Power Transistors DESCRIPTION • With TO-3PFa package • Complement to type 2SD1486 • High fT • Satisfactory linearity of hFE • Wide area of safe operation APPLICATIONS • For high power amplifier applications | JMNIC 锦美电子 | |||
Silicon PNP Power Transistors DESCRIPTION • With TO-3PFa package • Complement to type 2SD1486 • High fT • Satisfactory linearity of hFE • Wide area of safe operation APPLICATIONS • For high power amplifier applications | ISC 无锡固电 | |||
Silicon PNP Power Transistor DESCRIPTION • Low Collector Saturation Voltage- : VCE(sat)= -2.0V(Max)@lc= -4A • Wide Area of Safe Operation • Complement to Type 2SD1486 APPLICATIONS • Designed for high power amplification. | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | |||
Silicon PNP Power Transistor DESCRIPTION • Low Collector Saturation Voltage- : VCE(sat)= -2.0V(Max)@lc= -5A • Wide Area of Safe Operation • Complement to Type 2SD1487 APPLICATIONS • Designed for high power amplification. | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | |||
Silicon PNP Power Transistors DESCRIPTION • With TO-3PFa package • Complement to type 2SD1487 • High fT • Satisfactory linearity of hFE • Wide area of safe operation APPLICATIONS • For high power amplifier applications | SAVANTIC | |||
Silicon PNP Power Transistors DESCRIPTION • With TO-3PFa package • Complement to type 2SD1487 • High fT • Satisfactory linearity of hFE • Wide area of safe operation APPLICATIONS • For high power amplifier applications | ISC 无锡固电 | |||
Silicon PNP Power Transistors DESCRIPTION • With TO-3PFa package • Complement to type 2SD1487 • High fT • Satisfactory linearity of hFE • Wide area of safe operation APPLICATIONS • For high power amplifier applications | JMNIC 锦美电子 | |||
SI NPN TRIPLE DIFFUSED PLANAR HIGH POWER AMPLIFIER High Power Amplifier Complementary Pair with 2SB1056 | Panasonic 松下 | |||
Silicon PNP Power Transistors DESCRIPTION ·With TO-3PFa package ·Complement to type 2SD1488 ·High fT ·Satisfactory linearity of hFE ·Wide area of safe operation APPLICATIONS ·For high power amplifier applications | SAVANTIC | |||
Silicon PNP Power Transistors DESCRIPTION ·With TO-3PFa package ·Complement to type 2SD1488 ·High fT ·Satisfactory linearity of hFE ·Wide area of safe operation APPLICATIONS ·For high power amplifier applications | JMNIC 锦美电子 | |||
SI NPN TRIPLE DIFFUSED PLANAR HIGH POWER AMPLIFIER Si NPN Triple Diffused Planar High Power Amplifier Complementary Pair with 2SB1057 Features • Exceptionally good linearity of hFE. • Wide area of safe operation (ASO) • High fT • Full Pack package for simplified mounting only by a screw, requires no insulator. | Panasonic 松下 | |||
Silicon PNP Power Transistors DESCRIPTION · ·With TO-3PFa package ·Complement to type 2SD1488 ·High fT ·Satisfactory linearity of hFE ·Wide area of safe operation APPLICATIONS ·For high power amplifier applications | ISC 无锡固电 | |||
Silicon PNP Power Transistor DESCRIPTION • Low Collector Saturation Voltage- : VCE(sat)= -2.0V(Max)@IC= -7A • Wide Area of Safe Operation • Complement to Type 2SD1488 APPLICATIONS • Designed for high power amplification. | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | |||
LOW FREQUENCY POWER AMPLIFIER Complementary pair with 2SD1489 SILICON PNP EPITAXIAL LOW FREQUENCY POWER AMPLIFIER Complementary pair with 2SD1498 | HitachiHitachi Semiconductor 日立日立公司 | |||
Silicon PNP Epitaxial Application • Low frequency power amplifier • Complementary pair with 2SD1490 | HitachiHitachi Semiconductor 日立日立公司 | |||
Silicon PNP Power Transistors 文件:116.71 Kbytes Page:3 Pages | SAVANTIC | |||
Silicon PNP Power Transistors 文件:169.83 Kbytes Page:3 Pages | JMNIC 锦美电子 | |||
Silicon PNP Power Transistors 文件:169.83 Kbytes Page:3 Pages | JMNIC 锦美电子 | |||
Silicon PNP Power Transistors 文件:124.09 Kbytes Page:3 Pages | SAVANTIC | |||
Trans GP BJT PNP 100V 5A 3-Pin TOP-3F-A1 | ETC 知名厂家 | ETC | ||
Silicon PNP Power Transistors 文件:166.93 Kbytes Page:3 Pages | JMNIC 锦美电子 | |||
Silicon PNP Power Transistors 文件:166.93 Kbytes Page:3 Pages | JMNIC 锦美电子 | |||
封装/外壳:TOP-3F 包装:散装 描述:TRANS PNP 100V 5A TOP-3F 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个 | Panasonic 松下 | |||
Silicon PNP Power Transistors 文件:154.43 Kbytes Page:4 Pages | SAVANTIC | |||
Silicon PNP Power Transistors 文件:220.02 Kbytes Page:4 Pages | JMNIC 锦美电子 | |||
Silicon PNP Power Transistors 文件:220.02 Kbytes Page:4 Pages | JMNIC 锦美电子 | |||
Silicon PNP Power Transistors 文件:123.32 Kbytes Page:3 Pages | SAVANTIC | |||
SI NPN TRIPLE DIFFUSED PLANAR HIGH POWER AMPLIFIER | Panasonic 松下 | |||
Silicon PNP Power Transistors 文件:168.73 Kbytes Page:3 Pages | JMNIC 锦美电子 | |||
Silicon PNP Power Transistors 文件:168.73 Kbytes Page:3 Pages | JMNIC 锦美电子 | |||
Silicon PNP Power Transistors 文件:123.59 Kbytes Page:3 Pages | SAVANTIC | |||
SI NPN TRIPLE DIFFUSED PLANAR HIGH POWER AMPLIFIER | Panasonic 松下 | |||
Silicon PNP Power Transistors 文件:165.88 Kbytes Page:3 Pages | JMNIC 锦美电子 | |||
Silicon PNP Power Transistors 文件:165.88 Kbytes Page:3 Pages | JMNIC 锦美电子 | |||
Silicon PNP Epitaxial 文件:139.15 Kbytes Page:6 Pages | RENESAS 瑞萨 |
2SB105产品属性
- 类型
描述
- 型号
2SB105
- 制造商
PANASONIC
- 制造商全称
Panasonic Semiconductor
- 功能描述
Silicon PNP epitaxial planer type(For low-frequency amplification)
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ROHM/罗姆 |
25+ |
TO-220 |
860000 |
明嘉莱只做原装正品现货 |
|||
22+ |
TO126 |
100000 |
代理渠道/只做原装/可含税 |
||||
ON/安森美 |
24+ |
NA/ |
180 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
ON/安森美 |
20+ |
TO-220-2 |
38900 |
原装优势主营型号-可开原型号增税票 |
|||
NEC |
24+ |
CAN3 |
8858 |
公司原厂原装现货假一罚十!特价出售!强势库存! |
|||
24+ |
30000 |
||||||
HGF |
23+ |
TO-92 |
7600 |
专注配单,只做原装进口现货 |
|||
ON |
25+ |
TO-TO-220-2 |
12300 |
独立分销商 公司只做原装 诚心经营 免费试样正品保证 |
|||
ROHM |
05+ |
TO-126 |
3058 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
ON/安森美 |
TO-220-2 |
22+ |
6000 |
十年配单,只做原装 |
2SB105芯片相关品牌
2SB105规格书下载地址
2SB105参数引脚图相关
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- 2SB1051K
- 2SB1051
- 2SB1050
- 2SB1049
- 2SB1048
- 2SB1047
- 2SB1046
- 2SB1045
- 2SB1044M
- 2SB1044
- 2SB1043
- 2SB1042M
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- 2SB1041
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- 2SB1031
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- 2SB1027
- 2SB1026
- 2SB1025
- 2SB1024
- 2SB1023
- 2SB1022
2SB105数据表相关新闻
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2SB1386-P :PNP硅外延晶体管的特点如下: ·低集电极饱和电压 ·Execllent电流增益特性 ·无铅完成/符合RoHS(“P”字后缀指定符合RoHS标准。见订购信息) ·环氧符合UL 94V -0阻燃等级 · Moisure敏感度等级1 2SB1386-P/2SB1386-Q/2SB1386-R 是微型商业组件公司的产品型号
2012-11-9
DdatasheetPDF页码索引
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