位置:首页 > IC中文资料第1649页 > 2SB103
2SB103晶体管资料
2SB103别名:2SB103三极管、2SB103晶体管、2SB103晶体三极管
2SB103生产厂家:日本日电公司
2SB103制作材料:Ge-PNP
2SB103性质:低频或音频放大 (LF)_TR_输出极 (E)
2SB103封装形式:直插封装
2SB103极限工作电压:30V
2SB103最大电流允许值:0.1A
2SB103最大工作频率:<1MHZ或未知
2SB103引脚数:3
2SB103最大耗散功率:0.125W
2SB103放大倍数:
2SB103图片代号:D-9
2SB103vtest:30
2SB103htest:999900
- 2SB103atest:0.1
2SB103wtest:0.125
2SB103代换 2SB103用什么型号代替:AC128,AC153,AC188,2N1102,2N1102,2N1103,2N1104,3AX52B,
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
Silicon PNP epitaxial planer type(For low-frequency amplification) ■ Features ● Optimum for high-density mounting. ● Allowing supply with the radial taping. | Panasonic 松下 | |||
Silicon PNP epitaxial planer type(For low-frequency amplification) ■ Features ● Optimum for high-density mounting. ● Allowing supply with the radial taping. | Panasonic 松下 | |||
SILICON NPN EPITAXIAL LOW FREQUENCY POWER AMPLIFIER HIGH CURRENT SWITCHING Coming Soon. If you have some information on related parts, please share useful information by adding links below. | HitachiHitachi Semiconductor 日立日立公司 | |||
Complement to Type 2SD1435 DESCRIPTION • High DC Current Gain- : hFE = 1000(Min)@ IC= -8A • Collector-Emitter Sustaining Voltage- : VCEO(SUS) = -100V(Min) • Complement to Type 2SD1435 APPLICATIONS • Designed for low frequency power amplifier applications. | ISC 无锡固电 | |||
Silicon PNP Darlington Power Transistor DESCRIPTION • High DC Current Gain- : hFE = 1000(Min)@ IC= -8A • Collector-Emitter Sustaining Voltage- : VCEO(SUS) = -100V(Min) • Complement to Type 2SD1435 APPLICATIONS • Designed for low frequency power amplifier applications. | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | |||
LOW FREQUENCY POWER AMPLIFIER COMPLEMENTARY PAIR WITH 2SD1435K SILICON PNP EPITAXIAL LOW FREQUENCY POWER AMPLIFIER COMPLEMENTARY PAIR WITH 2SD1435K | HitachiHitachi Semiconductor 日立日立公司 | |||
Silicon PNP Triple Diffused Power switching complementary pair with 2SD1436(K) | HitachiHitachi Semiconductor 日立日立公司 | |||
Silicon PNP Triple Diffused Power switching complementary pair with 2SD1436(K) | HitachiHitachi Semiconductor 日立日立公司 | |||
Silicon PNP Power Transistors DESCRIPTION • With TO-220 package • Complement to type 2SD1437 APPLICATIONS • For low frequency power amplifier applications | SAVANTIC | |||
Silicon PNP Power Transistors DESCRIPTION • With TO-220 package • Complement to type 2SD1437 APPLICATIONS • For low frequency power amplifier applications | JMNIC 锦美电子 | |||
PNP EPITAXIAL SILICON TRANSISTOR(LOW FREQUENCY POWER AMPLIFIER) LOW FREQUENCY POWER AMPLIFIER ● Complement to 2SD1437 | WINGS 永盛电子 | |||
Silicon PNP Power Transistor DESCRIPTION • Collector-Emitter Breakdown Voltage- : V(BR)CEO= -60V(Min.) • Low Collector Saturation Voltage : VCE(sat)= -1.5V(Max)@lc= -2A • Complement to Type 2SD1437 APPLICATIONS • Designed for low frequency power amplifier applications. | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | |||
Silicon PNP Power Transistors DESCRIPTION • With TO-220 package • Complement to type 2SD1437 APPLICATIONS • For low frequency power amplifier applications | ISC 无锡固电 | |||
Silicon PNP Power Transistors DESCRIPTION • With TO-126 package • Low collector saturation voltage • High DC current gain • DARLINGTON APPLICATIONS • For power amplifier applications | ISC 无锡固电 | |||
2SB1034 Silicon PNP Power Transistors | TOSHIBA 东芝 | |||
Silicon PNP Power Transistors DESCRIPTION • With TO-126 package • Low collector saturation voltage • High DC current gain • DARLINGTON APPLICATIONS • For power amplifier applications | JMNIC 锦美电子 | |||
Silicon PNP Power Transistors DESCRIPTION • With TO-126 package • Low collector saturation voltage • High DC current gain • DARLINGTON APPLICATIONS • For power amplifier applications | SAVANTIC | |||
SMALL-SIGNAL TRANSISTOR FOR LOW FREQUENCY POWER AMPLIFY APPLICATION DESCRIPTION 2SB1035 is a resin sealed silicon PNP epitaxial type transistor. It is designed for low frequency power amplfy application. Complementary with 2SD1447. APPLICATION Radio, tape recorder, small type stereo, etc. Low frequency power amplify circuit with 2 to 3.5W output | ISAHAYA 谏早电子 | |||
2SB1035 2SB1021 | ETCList of Unclassifed Manufacturers 未分类制造商 | |||
Silicon PNP epitaxial planer type(For low-frequency and low-noise amplification) ■ Features ● Optimum for high-density mounting. ● Allowing supply with the radial taping. ● Low noise voltage NV. | Panasonic 松下 | |||
Color TV Vertical Output, Sound Output Applications Color TV Vertical Output, Sound Output Applications Features • High allowable collector dissipation (PC=2W). • Wide ASO. | SANYO 三洋 | |||
Silicon NPN Power Transistors DESCRIPTION • With TO-220 package • High allowable collector dissipation. • Complement to type 2SD1459 APPLICATIONS • For color TV vertical output, sound output applications | SAVANTIC | |||
Silicon NPN Power Transistors DESCRIPTION • With TO-220 package • High allowable collector dissipation. • Complement to type 2SD1459 APPLICATIONS • For color TV vertical output, sound output applications | ISC 无锡固电 | |||
Silicon NPN Power Transistors DESCRIPTION • With TO-220 package • High allowable collector dissipation. • Complement to type 2SD1459 APPLICATIONS • For color TV vertical output, sound output applications | JMNIC 锦美电子 | |||
Silicon PNP Power Transistor DESCRIPTION • Collector-Emitter Breakdown Voltage- : V(BR)CEo=-150V(Min.) • Wide Area of Safe Operation • Complement to Type 2SD1459 APPLICATIONS • Designed for color TV vertical output, sound output applications. | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | |||
封装/外壳:3-SIP 包装:散装 描述:TRANS PNP 50V 0.5A NS-B1 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个 | Panasonic 松下 | |||
Small-signal device - Small-signal transistor - General-use Low-Frequency Amplifires | Panasonic 松下 | |||
封装/外壳:3-SIP 包装:卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带 描述:TRANS PNP 50V 0.5A NS-B1 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个 | Panasonic 松下 | |||
SILICON NPN EPITAXIAL LOW FREQUENCY POWER AMPLIFIER HIGH CURRENT SWITCHING | HitachiHitachi Semiconductor 日立日立公司 | |||
LOW FREQUENCY POWER AMPLIFIER COMPLEMENTARY PAIR WITH 2SD1435K | HitachiHitachi Semiconductor 日立日立公司 | |||
Silicon PNP Triple Diffused 文件:150.45 Kbytes Page:7 Pages | RENESAS 瑞萨 | |||
Silicon PNP Power Transistors 文件:95.29 Kbytes Page:3 Pages | SAVANTIC | |||
Silicon PNP Power Transistors 文件:162.3 Kbytes Page:3 Pages | JMNIC 锦美电子 | |||
Silicon PNP Power Transistors 文件:162.3 Kbytes Page:3 Pages | JMNIC 锦美电子 | |||
Silicon PNP Power Transistors 文件:111.83 Kbytes Page:3 Pages | SAVANTIC | |||
Silicon PNP Power Transistors 文件:154.18 Kbytes Page:3 Pages | JMNIC 锦美电子 | |||
Silicon PNP Power Transistors 文件:154.18 Kbytes Page:3 Pages | JMNIC 锦美电子 | |||
Silicon NPN Power Transistors 文件:142.93 Kbytes Page:3 Pages | SAVANTIC | |||
Silicon NPN Power Transistors 文件:209.3 Kbytes Page:4 Pages | JMNIC 锦美电子 | |||
Silicon NPN Power Transistors 文件:209.3 Kbytes Page:4 Pages | JMNIC 锦美电子 | |||
Complement to Type 2SD1310 文件:111.51 Kbytes Page:2 Pages | ISC 无锡固电 | |||
Silicon PNP Power Transistor 文件:127.77 Kbytes Page:2 Pages | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 |
2SB103产品属性
- 类型
描述
- 型号
2SB103
- 制造商
Distributed By MCM
- 功能描述
SUB ONLY TRANSISTOR TO-5 -30V -.1A .125W
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
PANASON/松下 |
24+ |
NA/ |
3365 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
PANASONIC/松下 |
25+ |
TO-92S(TP) |
880000 |
明嘉莱只做原装正品现货 |
|||
Panasonic-SSG |
24+ |
NS-B1 |
5000 |
||||
PANASONIC/松下 |
2447 |
TO-92 |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
|||
Panasonic |
09+ |
TO92 |
3265 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
HITACHI/日立 |
TO-3P |
22+ |
6000 |
十年配单,只做原装 |
|||
Panasonic |
23+ |
TO92 |
3415 |
全新原装正品现货,支持订货 |
|||
PANASONIC/松下 |
23+ |
TO-92S |
71500 |
原厂授权代理,海外优势订货渠道。可提供大量库存,详 |
|||
日立 |
15+ |
TO-247 |
11560 |
全新原装,现货库存,长期供应 |
|||
PANASONIC/松下 |
23+ |
TO92 |
50000 |
全新原装正品现货,支持订货 |
2SB103芯片相关品牌
2SB103规格书下载地址
2SB103参数引脚图相关
- 5000
- 4921
- 4899
- 485接口
- 47471
- 4735
- 47301
- 4591
- 4536
- 4313
- 4069
- 4066
- 3q1
- 3g汽车
- 3579
- 35001
- 3477
- 31337
- 303c
- 2sc4226
- 2SB1058
- 2SB1057
- 2SB1056
- 2SB1055
- 2SB1054
- 2SB1052
- 2SB1050
- 2SB1048
- 2SB1046
- 2SB1044M
- 2SB1044
- 2SB1043
- 2SB1042M
- 2SB1042
- 2SB1041
- 2SB1040
- 2SB104
- 2SB1039
- 2SB1038
- 2SB1037
- 2SB1036
- 2SB1035
- 2SB1034
- 2SB1033
- 2SB1032(K)
- 2SB1032
- 2SB1031
- 2SB1030A
- 2SB1030
- 2SB1029
- 2SB1028
- 2SB1027
- 2SB1026
- 2SB1025
- 2SB1024
- 2SB1023
- 2SB1022
- 2SB1021
- 2SB1020
- 2SB102
- 2SB1019
- 2SB1018
- 2SB1017
- 2SB1016
- 2SB1015
- 2SB1014
- 2SB1013
- 2SB1012
- 2SB1011
- 2SB1010
- 2SB1009
- 2SB1007
- 2SB1005
2SB103数据表相关新闻
2SB562L-TO92NLK-B-TG_UTC代理商
2SB562L-TO92NLK-B-TG_UTC代理商
2023-3-142SA928AL-TO92NLB-Y-TG
2SA928AL-TO92NLB-Y-TG
2023-2-12SA812-T1B-A/S6 原装正品现货
支持实单 价格优势 有单必成
2022-3-302SB649 MOS
www.jskj-ic.com
2021-9-102SA2198
2SA2198,全新原装当天发货或门市自取0755-82732291.
2020-4-242SB1386-P-PNP硅外延晶体管
2SB1386-P :PNP硅外延晶体管的特点如下: ·低集电极饱和电压 ·Execllent电流增益特性 ·无铅完成/符合RoHS(“P”字后缀指定符合RoHS标准。见订购信息) ·环氧符合UL 94V -0阻燃等级 · Moisure敏感度等级1 2SB1386-P/2SB1386-Q/2SB1386-R 是微型商业组件公司的产品型号
2012-11-9
DdatasheetPDF页码索引
- P1
- P2
- P3
- P4
- P5
- P6
- P7
- P8
- P9
- P10
- P11
- P12
- P13
- P14
- P15
- P16
- P17
- P18
- P19
- P20
- P21
- P22
- P23
- P24
- P25
- P26
- P27
- P28
- P29
- P30
- P31
- P32
- P33
- P34
- P35
- P36
- P37
- P38
- P39
- P40
- P41
- P42
- P43
- P44
- P45
- P46
- P47
- P48
- P49
- P50
- P51
- P52
- P53
- P54
- P55
- P56
- P57
- P58
- P59
- P60
- P61
- P62
- P63
- P64
- P65
- P66
- P67
- P68
- P69
- P70
- P71
- P72
- P73
- P74
- P75
- P76
- P77
- P78
- P79
- P80
- P81
- P82
- P83
- P84
- P85
- P86
- P87
- P88
- P89
- P90
- P91
- P92
- P93
- P94
- P95
- P96
- P97
- P98
- P99
- P100
- P101
- P102
- P103
- P104
- P105
- P106
- P107