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2SA22晶体管资料
- 2SA22别名:2SA22三极管、2SA22晶体管、2SA22晶体三极管 
- 2SA22生产厂家:日本富士通公司 
- 2SA22制作材料:Ge-PNP 
- 2SA22性质:射频/高频放大 (HF)_中频放大 (ZF) 
- 2SA22封装形式:直插封装 
- 2SA22极限工作电压:20V 
- 2SA22最大电流允许值:0.02A 
- 2SA22最大工作频率:12MHZ 
- 2SA22引脚数:3 
- 2SA22最大耗散功率: 
- 2SA22放大倍数: 
- 2SA22图片代号:D-9 
- 2SA22vtest:20 
- 2SA22htest:12000000 
- 2SA22atest:0.02
- 2SA22wtest:0 
- 2SA22代换 2SA22用什么型号代替:AF124,AF125,AF126,AF127,AF200,2N3323,2N3324,2N3325,2SA201,2SA202,3AG54A, 
2SA22价格
参考价格:¥1.0828
型号:2SA2202-TD-E 品牌:On Semiconductor 备注:这里有2SA22多少钱,2025年最近7天走势,今日出价,今日竞价,2SA22批发/采购报价,2SA22行情走势销售排行榜,2SA22报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 | 
|---|---|---|---|---|
| High-Voltage Switching Applications Features • Adoption of FBET, MBIT processes. • Large current capacitance. • Low collector-to-emitter saturation voltage. • High-speed switching. • High allowable power dissipation. Applications • DC / DC converters, relay drivers, lamp drivers, motor drivers, flash. | SANYO 三洋 | |||
| Bipolar Transistor -100V, -2A, Low VCE(sat) PNP Single PCP Features • Adoption of FBET, MBIT processes • Large current capacity • Low collector to emitter saturation voltage • High-speed switching • High allowable power dissipation Applicaitons • DC / DC converters, relay drivers, lamp drivers, motor drivers, flash | ONSEMI 安森美半导体 | |||
| Bipolar Transistor -100V, -2A, Low VCE(sat) PNP Single PCP Features • Adoption of FBET, MBIT processes • Large current capacity • Low collector to emitter saturation voltage • High-speed switching • High allowable power dissipation Applicaitons • DC / DC converters, relay drivers, lamp drivers, motor drivers, flash | ONSEMI 安森美半导体 | |||
| PNP Epitaxial Planar Silicon Transistor High-Current Switching Applications Features • Adoption of FBET, MBIT processes. • Large current capacitance. • Low collector-to-emitter saturation voltage. • High-speed switching. • High allowable power dissipation. Applications • DC / DC converter, Relay drivers, lamp drivers, motor drivers. | SANYO 三洋 | |||
| PNP Epitaxial Planar Silicon Transistor High-Voltage Switching Applications Features • Adoption of FBET, MBIT processes. • Large current capacitance. • Low collector-to-emitter saturation voltage. • High-speed switching. • High allowable power dissipation. Applications • DC / DC converter, Relay drivers, lamp drivers, motor drivers. | SANYO 三洋 | |||
| PNP Epitaxial Planar Silicon Transistor High-Voltage Switching Applications Features • Adoption of FBET, MBIT processes. • Large current capacitance. • Low collector-to-emitter saturation voltage. • High-speed switching. • High allowable power dissipation. Applications • DC / DC converter, Relay drivers, lamp drivers, motor drivers. | SANYO 三洋 | |||
| Bipolar Transistor -100V, -2A, Low VCE(sat), PNP Single TP/TP-FA Features • Adoption of FBET, MBIT processes • Large current capacity • Low collector-to-emitter saturation voltage • High-speed switching • High allowable power dissipation Applications • DC / DC converter, Relay drivers, lamp drivers, motor drivers | ONSEMI 安森美半导体 | |||
| Bipolar Transistor -100V, -2A, Low VCE(sat), PNP Single TP/TP-FA Features • Adoption of FBET, MBIT processes • Large current capacity • Low collector-to-emitter saturation voltage • High-speed switching • High allowable power dissipation Applications • DC / DC converter, Relay drivers, lamp drivers, motor drivers | ONSEMI 安森美半导体 | |||
| Bipolar Transistor -100V, -2A, Low VCE(sat), PNP Single TP/TP-FA Features • Adoption of FBET, MBIT processes • Large current capacity • Low collector-to-emitter saturation voltage • High-speed switching • High allowable power dissipation Applications • DC / DC converter, Relay drivers, lamp drivers, motor drivers | ONSEMI 安森美半导体 | |||
| Bipolar Small-Signal Transistors MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf | TOSHIBA 东芝 | |||
| PNP Epitaxial Planar Silicon Transistor 50V / 13A High-Speed Switching Applications Features • Adoption of MBIT processes. • Large current capacitance. • Low collector-to-emitter saturation voltage. • High-speed switching. Applications • High-speed switching applications (switching regulators, drive circuit). | SANYO 三洋 | |||
| Silicon PNP Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -50V(Min) ·DC Current Gain- : hFE= 200(Min)@ IC= -270mA ·Fast switching speed ·Large current capacity APPLICATIONS ·Power amplifier applications ·Driver stage amplifier applications | ISC 无锡固电 | |||
| Silicon PNP Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -50V(Min) ·DC Current Gain- : hFE= 200(Min)@ IC= -270mA ·Fast switching speed ·Large current capacity APPLICATIONS ·Power amplifier applications ·Driver stage amplifier applications | ISC 无锡固电 | |||
| Silicon PNP Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -50V(Min) ·DC Current Gain- : hFE= 200(Min)@ IC= -270mA ·Fast switching speed ·Large current capacity APPLICATIONS ·Power amplifier applications ·Driver stage amplifier applications | ISC 无锡固电 | |||
| Silicon PNP Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -50V(Min) ·DC Current Gain- : hFE= 200(Min)@ IC= -270mA ·Fast switching speed ·Large current capacity APPLICATIONS ·Power amplifier applications ·Driver stage amplifier applications | ISC 无锡固电 | |||
| Silicon PNP Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -50V(Min) ·DC Current Gain- : hFE= 200(Min)@ IC= -330mA ·Fast switching speed ·Large current capacity APPLICATIONS ·Power amplifier applications ·Driver stage amplifier applications | ISC 无锡固电 | |||
| Silicon PNP Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -50V(Min) ·DC Current Gain- : hFE= 200(Min)@ IC= -330mA ·Fast switching speed ·Large current capacity APPLICATIONS ·Power amplifier applications ·Driver stage amplifier applications | ISC 无锡固电 | |||
| PNP Epitaxial Planar Silicon Transistor 50V / 15A High-Speed Switching Features • Adoption of MBIT processes. • Large current capacitance. • Low collector-to-emitter saturation voltage. • High-speed switching. Applications • High-speed switching applications (switching regulator, driver circuit). | SANYO 三洋 | |||
| Silicon PNP Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -50V(Min) ·DC Current Gain- : hFE= 200(Min)@ IC= -330mA ·Fast switching speed ·Large current capacity APPLICATIONS ·Power amplifier applications ·Driver stage amplifier applications | ISC 无锡固电 | |||
| Silicon PNP Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -50V(Min) ·DC Current Gain- : hFE= 200(Min)@ IC= -330mA ·Fast switching speed ·Large current capacity APPLICATIONS ·Power amplifier applications ·Driver stage amplifier applications | ISC 无锡固电 | |||
| Bipolar Transistor –50V, –20A, Low VCE(sat) PNP TO-220F-3SG Features • Adoption of MBIT processes • Low collector-to-emitter saturation voltage • Large current capacitance • High-speed switching | SYC | |||
| PNP Epitaxial Planar Silicon Transistor High-Current Switching Applications Features • Adoption of MBIT processes • Large current capacitance • Low collector-to-emitter saturation voltage • High-speed switching Applications • Relay drivers, lamp drivers, motor drivers. | SANYO 三洋 | |||
| Bipolar Transistor -50V, -20A, Low VCE(sat) PNP TO-220F-3SG Bipolar Transistor –50V, –20A, Low VCE(sat) PNP TO-220F-3SG Features • Adoption of MBIT processes • Large current capacitance • Low collector-to-emitter saturation voltage • High-speed switching Applications • Relay drivers, lamp drivers, motor drivers. | ONSEMI 安森美半导体 | |||
| isc Silicon PNP Power Transistor DESCRIPTION • Large current capacitance • High-speed switching • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS • relay drivers,lamp drivers,motor drivers | ISC 无锡固电 | |||
| Bipolar Transistor -50V, -20A, Low VCE(sat) PNP TO-220F-3SG Bipolar Transistor –50V, –20A, Low VCE(sat) PNP TO-220F-3SG Features • Adoption of MBIT processes • Large current capacitance • Low collector-to-emitter saturation voltage • High-speed switching Applications • Relay drivers, lamp drivers, motor drivers. | ONSEMI 安森美半导体 | |||
| Transistor Silicon PNP Epitaxial Type ○ Audio Frequency Amplifier Applications • High collector voltage : VCEO = - 160 V (min) • Small collector output capacitance : Cob = 17pF (typ.) • High transition frequency : fT = 100MHz (typ.) • Complementary to 2SC6139 | TOSHIBA 东芝 | |||
| Bipolar Small-Signal Transistors MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf | TOSHIBA 东芝 | |||
| Bipolar Small-Signal Transistors MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf | TOSHIBA 东芝 | |||
| Transistor Silicon PNP Epitaxial Type ○ Audio Frequency Amplifier Applications • High collector voltage : VCEO = - 160 V • Small collector output capacitance : Cob = 17 pF (typ.) • High transition frequency : fT = 100 MHz (typ.) • Complementary to 2SC6140 | TOSHIBA 东芝 | |||
| 230V / 15A, AF100W Output Applications 230V / 15A, AF100W Output Applications Features • Large current capacitance. • Wide ASO and high durability against breakdown. • Adoption of MBIT process. Applications • 230V / 15A, AF100W output applications. | SANYO 三洋 | |||
| High-Current Switching Applications High-Current Switching Applications Features • Adoption of MBIT process. • Large current capacitance. • Low collector-to-emitter saturation voltage. • High-speed switching. | SANYO 三洋 | |||
| Silicon PNP Power Transistor FEATURES ·Low Collector-to-emitter Saturation Voltage ·Large Current Capacitance ·High-speed Switching DESCRIPTION ·Relay drivers ·Lamp drivers ·Motor drivers | ISC 无锡固电 | |||
| PNP Epitaxial Planar Silicon Transistor High-Current Switching Applications Features • Adoption of MBIT process • Large current capacitance (IC=--10A) • Low collector-to-emitter saturation voltage (VCE(sat)=--250mV(typ.)) • High-speed switching (tf=22ns(typ.)) Applications • Relay drivers, lamp drivers, motor drivers | SANYO 三洋 | |||
| Bipolar Transistor -50V, -10A, Low VCE(sat) PNP TO-220F-3FS Features • Adoption of MBIT process • Large current capacity (IC=--10A) • Low collector-to-emitter saturation voltage (VCE(sat)=--250mV(typ.)) • High-speed switching (tf=22ns(typ.)) Applications • Relay drivers, lamp drivers, motor drivers | ONSEMI 安森美半导体 | |||
| isc Silicon PNP Power Transistor DESCRIPTION • Large current capacitance • High-speed switching • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS • relay drivers,lamp drivers,motor drivers | ISC 无锡固电 | |||
| PNP Epitaxial Planar Silicon Transistor High-Current Switching Applications | ONSEMI 安森美半导体 | |||
| PNP Epitaxial Planar Silicon Transistor High-Voltage Switching Applications | ONSEMI 安森美半导体 | |||
| 双极晶体管,-100V,-2A,低饱和压,PNP 单 TP/TP-FA | ONSEMI 安森美半导体 | |||
| 封装/外壳:TO-251-3 短引线,IPak,TO-251AA 包装:卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带 描述:TRANS PNP 100V 2A TP 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个 | ONSEMI 安森美半导体 | |||
| 封装/外壳:TO-252-3,DPak(2 引线 + 接片),SC-63 包装:卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带 描述:TRANS PNP 100V 2A TPFA 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个 | ONSEMI 安森美半导体 | |||
| PNP Epitaxial Planar Silicon Transistor High-Current Switching Applications 文件:249.08 Kbytes Page:5 Pages | SANYO 三洋 | |||
| PNP Epitaxial Planar Silicon Transistor High-Current Switching Applications 文件:249.08 Kbytes Page:5 Pages | SANYO 三洋 | |||
| Audio Amplification Transistor 文件:226.4 Kbytes Page:6 Pages | Sanken 三垦 | |||
| isc Silicon PNP Power Transistor 文件:269.36 Kbytes Page:2 Pages | ISC 无锡固电 | |||
| isc Silicon PNP Power Transistor 文件:253.15 Kbytes Page:2 Pages | ISC 无锡固电 | |||
| Audio Amplification Transistor 文件:226.15 Kbytes Page:6 Pages | Sanken 三垦 | |||
| 2WATT, UNREGULATED OUTPUT DC-DC CONVERTERS 文件:363.38 Kbytes Page:2 Pages | Cincon 幸康电子 | 
2SA22产品属性
- 类型描述 
- 型号2SA22 
- 制造商SANYO 
- 功能描述PNP 60V 0.1A 200 to 400 PCP Tape & Reel 
- 制造商SANYO Semiconductor Co Ltd 
- 功能描述TRANSISTOR PNP 60V 3A SOT89 
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 | 
|---|---|---|---|---|---|---|---|
| SANYO/三洋 | 24+ | NA/ | 7450 | 原装现货,当天可交货,原型号开票 | |||
| ON(安森美) | 24+ | TO2203 整包 | 7350 | 现货供应,当天可交货!免费送样,原厂技术支持!!! | |||
| SANYO | 23+ | SOT-252 | 30000 | 代理全新原装现货,价格优势 | |||
| ON/ST | 24+ | 1000 | |||||
| SANYO | 1932+ | TO-220F | 514 | 一级代理,专注军工、汽车、医疗、工业、新能源、电力 | |||
| ON | 24+ | TO-220-3 FullPak | 25000 | ON全系列可订货 | |||
| ON/安森美 | 2406+ | TO-220 | 36880 | 诚信经营!进口原装!量大价优! | |||
| ON(安森美) | 23+ | NA | 20094 | 正纳10年以上分销经验原装进口正品做服务做口碑有支持 | |||
| SANYO | 2016+ | SOT-252 | 4200 | 只做原装,假一罚十,公司可开17%增值税发票! | |||
| ST | 专业铁帽 | CAN | 2000 | 原装铁帽专营,代理渠道量大可订货 | 
2SA22芯片相关品牌
2SA22规格书下载地址
2SA22参数引脚图相关
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- 2SA201
2SA22数据表相关新闻
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- 2SB1386-P-PNP硅外延晶体管- 2SB1386-P :PNP硅外延晶体管的特点如下: ·低集电极饱和电压 ·Execllent电流增益特性 ·无铅完成/符合RoHS(“P”字后缀指定符合RoHS标准。见订购信息) ·环氧符合UL 94V -0阻燃等级 · Moisure敏感度等级1 2SB1386-P/2SB1386-Q/2SB1386-R 是微型商业组件公司的产品型号 2012-11-9
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