2SA22晶体管资料

  • 2SA22别名:2SA22三极管、2SA22晶体管、2SA22晶体三极管

  • 2SA22生产厂家:日本富士通公司

  • 2SA22制作材料:Ge-PNP

  • 2SA22性质:射频/高频放大 (HF)_中频放大 (ZF)

  • 2SA22封装形式:直插封装

  • 2SA22极限工作电压:20V

  • 2SA22最大电流允许值:0.02A

  • 2SA22最大工作频率:12MHZ

  • 2SA22引脚数:3

  • 2SA22最大耗散功率

  • 2SA22放大倍数

  • 2SA22图片代号:D-9

  • 2SA22vtest:20

  • 2SA22htest:12000000

  • 2SA22atest:0.02

  • 2SA22wtest:0

  • 2SA22代换 2SA22用什么型号代替:AF124,AF125,AF126,AF127,AF200,2N3323,2N3324,2N3325,2SA201,2SA202,3AG54A,

2SA22价格

参考价格:¥1.0828

型号:2SA2202-TD-E 品牌:On Semiconductor 备注:这里有2SA22多少钱,2025年最近7天走势,今日出价,今日竞价,2SA22批发/采购报价,2SA22行情走势销售排行榜,2SA22报价。
型号 功能描述 生产厂家 企业 LOGO 操作

High-Voltage Switching Applications

Features • Adoption of FBET, MBIT processes. • Large current capacitance. • Low collector-to-emitter saturation voltage. • High-speed switching. • High allowable power dissipation. Applications • DC / DC converters, relay drivers, lamp drivers, motor drivers, flash.

SANYO

三洋

Bipolar Transistor -100V, -2A, Low VCE(sat) PNP Single PCP

Features • Adoption of FBET, MBIT processes • Large current capacity • Low collector to emitter saturation voltage • High-speed switching • High allowable power dissipation Applicaitons • DC / DC converters, relay drivers, lamp drivers, motor drivers, flash

ONSEMI

安森美半导体

Bipolar Transistor -100V, -2A, Low VCE(sat) PNP Single PCP

Features • Adoption of FBET, MBIT processes • Large current capacity • Low collector to emitter saturation voltage • High-speed switching • High allowable power dissipation Applicaitons • DC / DC converters, relay drivers, lamp drivers, motor drivers, flash

ONSEMI

安森美半导体

PNP Epitaxial Planar Silicon Transistor High-Current Switching Applications

Features • Adoption of FBET, MBIT processes. • Large current capacitance. • Low collector-to-emitter saturation voltage. • High-speed switching. • High allowable power dissipation. Applications • DC / DC converter, Relay drivers, lamp drivers, motor drivers.

SANYO

三洋

PNP Epitaxial Planar Silicon Transistor High-Voltage Switching Applications

Features • Adoption of FBET, MBIT processes. • Large current capacitance. • Low collector-to-emitter saturation voltage. • High-speed switching. • High allowable power dissipation. Applications • DC / DC converter, Relay drivers, lamp drivers, motor drivers.

SANYO

三洋

PNP Epitaxial Planar Silicon Transistor High-Voltage Switching Applications

Features • Adoption of FBET, MBIT processes. • Large current capacitance. • Low collector-to-emitter saturation voltage. • High-speed switching. • High allowable power dissipation. Applications • DC / DC converter, Relay drivers, lamp drivers, motor drivers.

SANYO

三洋

Bipolar Transistor -100V, -2A, Low VCE(sat), PNP Single TP/TP-FA

Features • Adoption of FBET, MBIT processes • Large current capacity • Low collector-to-emitter saturation voltage • High-speed switching • High allowable power dissipation Applications • DC / DC converter, Relay drivers, lamp drivers, motor drivers

ONSEMI

安森美半导体

Bipolar Transistor -100V, -2A, Low VCE(sat), PNP Single TP/TP-FA

Features • Adoption of FBET, MBIT processes • Large current capacity • Low collector-to-emitter saturation voltage • High-speed switching • High allowable power dissipation Applications • DC / DC converter, Relay drivers, lamp drivers, motor drivers

ONSEMI

安森美半导体

Bipolar Transistor -100V, -2A, Low VCE(sat), PNP Single TP/TP-FA

Features • Adoption of FBET, MBIT processes • Large current capacity • Low collector-to-emitter saturation voltage • High-speed switching • High allowable power dissipation Applications • DC / DC converter, Relay drivers, lamp drivers, motor drivers

ONSEMI

安森美半导体

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TOSHIBA

东芝

PNP Epitaxial Planar Silicon Transistor 50V / 13A High-Speed Switching Applications

Features • Adoption of MBIT processes. • Large current capacitance. • Low collector-to-emitter saturation voltage. • High-speed switching. Applications • High-speed switching applications (switching regulators, drive circuit).

SANYO

三洋

Silicon PNP Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -50V(Min) ·DC Current Gain- : hFE= 200(Min)@ IC= -270mA ·Fast switching speed ·Large current capacity APPLICATIONS ·Power amplifier applications ·Driver stage amplifier applications

ISC

无锡固电

Silicon PNP Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -50V(Min) ·DC Current Gain- : hFE= 200(Min)@ IC= -270mA ·Fast switching speed ·Large current capacity APPLICATIONS ·Power amplifier applications ·Driver stage amplifier applications

ISC

无锡固电

Silicon PNP Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -50V(Min) ·DC Current Gain- : hFE= 200(Min)@ IC= -270mA ·Fast switching speed ·Large current capacity APPLICATIONS ·Power amplifier applications ·Driver stage amplifier applications

ISC

无锡固电

Silicon PNP Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -50V(Min) ·DC Current Gain- : hFE= 200(Min)@ IC= -270mA ·Fast switching speed ·Large current capacity APPLICATIONS ·Power amplifier applications ·Driver stage amplifier applications

ISC

无锡固电

Silicon PNP Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -50V(Min) ·DC Current Gain- : hFE= 200(Min)@ IC= -330mA ·Fast switching speed ·Large current capacity APPLICATIONS ·Power amplifier applications ·Driver stage amplifier applications

ISC

无锡固电

Silicon PNP Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -50V(Min) ·DC Current Gain- : hFE= 200(Min)@ IC= -330mA ·Fast switching speed ·Large current capacity APPLICATIONS ·Power amplifier applications ·Driver stage amplifier applications

ISC

无锡固电

PNP Epitaxial Planar Silicon Transistor 50V / 15A High-Speed Switching

Features • Adoption of MBIT processes. • Large current capacitance. • Low collector-to-emitter saturation voltage. • High-speed switching. Applications • High-speed switching applications (switching regulator, driver circuit).

SANYO

三洋

Silicon PNP Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -50V(Min) ·DC Current Gain- : hFE= 200(Min)@ IC= -330mA ·Fast switching speed ·Large current capacity APPLICATIONS ·Power amplifier applications ·Driver stage amplifier applications

ISC

无锡固电

Silicon PNP Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -50V(Min) ·DC Current Gain- : hFE= 200(Min)@ IC= -330mA ·Fast switching speed ·Large current capacity APPLICATIONS ·Power amplifier applications ·Driver stage amplifier applications

ISC

无锡固电

Bipolar Transistor –50V, –20A, Low VCE(sat) PNP TO-220F-3SG

Features • Adoption of MBIT processes • Low collector-to-emitter saturation voltage • Large current capacitance • High-speed switching

SYC

PNP Epitaxial Planar Silicon Transistor High-Current Switching Applications

Features • Adoption of MBIT processes • Large current capacitance • Low collector-to-emitter saturation voltage • High-speed switching Applications • Relay drivers, lamp drivers, motor drivers.

SANYO

三洋

Bipolar Transistor -50V, -20A, Low VCE(sat) PNP TO-220F-3SG

Bipolar Transistor –50V, –20A, Low VCE(sat) PNP TO-220F-3SG Features • Adoption of MBIT processes • Large current capacitance • Low collector-to-emitter saturation voltage • High-speed switching Applications • Relay drivers, lamp drivers, motor drivers.

ONSEMI

安森美半导体

isc Silicon PNP Power Transistor

DESCRIPTION • Large current capacitance • High-speed switching • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS • relay drivers,lamp drivers,motor drivers

ISC

无锡固电

Bipolar Transistor -50V, -20A, Low VCE(sat) PNP TO-220F-3SG

Bipolar Transistor –50V, –20A, Low VCE(sat) PNP TO-220F-3SG Features • Adoption of MBIT processes • Large current capacitance • Low collector-to-emitter saturation voltage • High-speed switching Applications • Relay drivers, lamp drivers, motor drivers.

ONSEMI

安森美半导体

Transistor Silicon PNP Epitaxial Type

○ Audio Frequency Amplifier Applications • High collector voltage : VCEO = - 160 V (min) • Small collector output capacitance : Cob = 17pF (typ.) • High transition frequency : fT = 100MHz (typ.) • Complementary to 2SC6139

TOSHIBA

东芝

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TOSHIBA

东芝

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TOSHIBA

东芝

Transistor Silicon PNP Epitaxial Type

○ Audio Frequency Amplifier Applications • High collector voltage : VCEO = - 160 V • Small collector output capacitance : Cob = 17 pF (typ.) • High transition frequency : fT = 100 MHz (typ.) • Complementary to 2SC6140

TOSHIBA

东芝

230V / 15A, AF100W Output Applications

230V / 15A, AF100W Output Applications Features • Large current capacitance. • Wide ASO and high durability against breakdown. • Adoption of MBIT process. Applications • 230V / 15A, AF100W output applications.

SANYO

三洋

High-Current Switching Applications

High-Current Switching Applications Features • Adoption of MBIT process. • Large current capacitance. • Low collector-to-emitter saturation voltage. • High-speed switching.

SANYO

三洋

Silicon PNP Power Transistor

FEATURES ·Low Collector-to-emitter Saturation Voltage ·Large Current Capacitance ·High-speed Switching DESCRIPTION ·Relay drivers ·Lamp drivers ·Motor drivers

ISC

无锡固电

PNP Epitaxial Planar Silicon Transistor High-Current Switching Applications

Features • Adoption of MBIT process • Large current capacitance (IC=--10A) • Low collector-to-emitter saturation voltage (VCE(sat)=--250mV(typ.)) • High-speed switching (tf=22ns(typ.)) Applications • Relay drivers, lamp drivers, motor drivers

SANYO

三洋

Bipolar Transistor -50V, -10A, Low VCE(sat) PNP TO-220F-3FS

Features • Adoption of MBIT process • Large current capacity (IC=--10A) • Low collector-to-emitter saturation voltage (VCE(sat)=--250mV(typ.)) • High-speed switching (tf=22ns(typ.)) Applications • Relay drivers, lamp drivers, motor drivers

ONSEMI

安森美半导体

isc Silicon PNP Power Transistor

DESCRIPTION • Large current capacitance • High-speed switching • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS • relay drivers,lamp drivers,motor drivers

ISC

无锡固电

PNP Epitaxial Planar Silicon Transistor High-Current Switching Applications

ONSEMI

安森美半导体

PNP Epitaxial Planar Silicon Transistor High-Voltage Switching Applications

ONSEMI

安森美半导体

双极晶体管,-100V,-2A,低饱和压,PNP 单 TP/TP-FA

ONSEMI

安森美半导体

封装/外壳:TO-251-3 短引线,IPak,TO-251AA 包装:卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带 描述:TRANS PNP 100V 2A TP 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个

ONSEMI

安森美半导体

封装/外壳:TO-252-3,DPak(2 引线 + 接片),SC-63 包装:卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带 描述:TRANS PNP 100V 2A TPFA 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个

ONSEMI

安森美半导体

PNP Epitaxial Planar Silicon Transistor High-Current Switching Applications

文件:249.08 Kbytes Page:5 Pages

SANYO

三洋

PNP Epitaxial Planar Silicon Transistor High-Current Switching Applications

文件:249.08 Kbytes Page:5 Pages

SANYO

三洋

Audio Amplification Transistor

文件:226.4 Kbytes Page:6 Pages

Sanken

三垦

isc Silicon PNP Power Transistor

文件:269.36 Kbytes Page:2 Pages

ISC

无锡固电

isc Silicon PNP Power Transistor

文件:253.15 Kbytes Page:2 Pages

ISC

无锡固电

Audio Amplification Transistor

文件:226.15 Kbytes Page:6 Pages

Sanken

三垦

2WATT, UNREGULATED OUTPUT DC-DC CONVERTERS

文件:363.38 Kbytes Page:2 Pages

Cincon

幸康电子

2SA22产品属性

  • 类型

    描述

  • 型号

    2SA22

  • 制造商

    SANYO

  • 功能描述

    PNP 60V 0.1A 200 to 400 PCP Tape & Reel

  • 制造商

    SANYO Semiconductor Co Ltd

  • 功能描述

    TRANSISTOR PNP 60V 3A SOT89

更新时间:2025-10-31 17:43:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
SANYO/三洋
24+
NA/
7450
原装现货,当天可交货,原型号开票
ON(安森美)
24+
TO2203 整包
7350
现货供应,当天可交货!免费送样,原厂技术支持!!!
SANYO
23+
SOT-252
30000
代理全新原装现货,价格优势
ON/ST
24+
1000
SANYO
1932+
TO-220F
514
一级代理,专注军工、汽车、医疗、工业、新能源、电力
ON
24+
TO-220-3 FullPak
25000
ON全系列可订货
ON/安森美
2406+
TO-220
36880
诚信经营!进口原装!量大价优!
ON(安森美)
23+
NA
20094
正纳10年以上分销经验原装进口正品做服务做口碑有支持
SANYO
2016+
SOT-252
4200
只做原装,假一罚十,公司可开17%增值税发票!
ST
专业铁帽
CAN
2000
原装铁帽专营,代理渠道量大可订货

2SA22数据表相关新闻