PNP Epitaxial Planar Silicon Transistor High-Current Switching Applications

Features • Adoption of MBIT process • Large current capacitance (IC=--10A) • Low collector-to-emitter saturation voltage (VCE(sat)=--250mV(typ.)) • High-speed switching (tf=22ns(typ.)) Applications • Relay drivers, lamp drivers, motor drivers

Bipolar Transistor -50V, -10A, Low VCE(sat) PNP TO-220F-3FS

Features • Adoption of MBIT process • Large current capacity (IC=--10A) • Low collector-to-emitter saturation voltage (VCE(sat)=--250mV(typ.)) • High-speed switching (tf=22ns(typ.)) Applications • Relay drivers, lamp drivers, motor drivers

isc Silicon PNP Power Transistor

DESCRIPTION • Large current capacitance • High-speed switching • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS • relay drivers,lamp drivers,motor drivers

双极晶体管，-50V，-10A，低饱和压，PNP TO-220F-3FS

2SA2222SG is Bipolar Transistor, -50V, -10A, Low VCE(sat), PNP TO-220F-3FS for High-Current Switching Applications. • Adoption of MBIT process\n• Large current capacity (IC=-10A)\n• Low collector-to-emitter saturation voltage (VCE(sat)=-250mV(typ))\n•High-speed switching (tf=22ns(typ));

封装/外壳：TO-220-3 整包 包装：散装 描述：TRANS PNP 50V 10A TO220ML 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

High-Current Switching Applications

High-Current Switching Applications Features • Adoption of MBIT process. • Large current capacitance. • Low collector-to-emitter saturation voltage. • High-speed switching.

Silicon PNP Power Transistor

FEATURES ·Low Collector-to-emitter Saturation Voltage ·Large Current Capacitance ·High-speed Switching DESCRIPTION ·Relay drivers ·Lamp drivers ·Motor drivers