2SA218晶体管资料

  • 2SA218别名:2SA218三极管、2SA218晶体管、2SA218晶体三极管

  • 2SA218生产厂家:日本三洋公司

  • 2SA218制作材料:Ge-PNP

  • 2SA218性质:射频/高频放大 (HF)_中频放大 (ZF)

  • 2SA218封装形式:直插封装

  • 2SA218极限工作电压:20V

  • 2SA218最大电流允许值:0.01A

  • 2SA218最大工作频率:55MHZ

  • 2SA218引脚数:3

  • 2SA218最大耗散功率

  • 2SA218放大倍数

  • 2SA218图片代号:D-58

  • 2SA218vtest:20

  • 2SA218htest:55000000

  • 2SA218atest:0.01

  • 2SA218wtest:0

  • 2SA218代换 2SA218用什么型号代替:AF124,AF125,AF126,AF200,2N3323,2N3324,2N3325,2SA102,2SA103,2SA104,3AG53A,

2SA218价格

参考价格:¥0.8150

型号:2SA2186-AN 品牌:ON 备注:这里有2SA218多少钱,2025年最近7天走势,今日出价,今日竞价,2SA218批发/采购报价,2SA218行情走势销售排行榜,2SA218报价。
型号 功能描述 生产厂家 企业 LOGO 操作

PNP Epitaxial Planar Silicon Transistor 50V / 5A High-Speed Switching

PNP Epitaxial Planar Silicon Transistor Features • Adoption of MBIT processes. • Large current capacitance. • Low collector-to-emitter saturation voltage. • High-speed switching. Applications • High-speed switching applications (switching regulator, driver circuit).

SANYO

三洋

PNP Epitaxial Planar Silicon Transistor 50V / 15A High-Speed Switching

PNP Epitaxial Planar Silicon Transistor Features • Adoption of MBIT processes. • Large current capacitance. • Low collector-to-emitter saturation voltage. • High-speed switching. Applications • High-speed switching applications (switching regulator, driver circuit).

SANYO

三洋

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TOSHIBA

东芝

Power Amplifier Applications Driver Stage Amplifier Applications

Features ・High transition frequency: fT = 80 MHz (typ.)

TOSHIBA

东芝

High Current Switching Applications

Features - Low collector-emitter saturation : VCE(sat) = −1.0 V(max)

TOSHIBA

东芝

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TOSHIBA

东芝

isc Silicon PNP Power Transistor

DESCRIPTION ·Low Collector Saturation Voltage- : VCE(sat)= -0.7V(Max.)@IC= -0.3A ·High Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high current switching applications.

ISC

无锡固电

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TOSHIBA

东芝

Silicon Power Transistor

Features - Low collector saturation voltage. VCE(sat)=-0.7V(Max.) @ IC=-0.3A - High switching speed. - Designed for high current switching applications.

COMCHIP

典琦

PNP Epitaxial Planar Silicon Transistor High-Current Switching Applications

PNP Epitaxial Planar Silicon Transistor Features • Adoption of MBIT processes. • High current capacity. • Low collector-to-emitter saturation voltage. • High-speed switching. Applications • Voltage regulators, relay drivers, lamp drivers, electrical equipment.

SANYO

三洋

Bipolar Transistor -50V, -2A, Low VCE(sat), PNP Single NMP

Bipolar Transistor -50V, -2A, Low VCE(sat), PNP Single NMP Features • Adoption of MBIT processes • Large current capacity • Low collector-to-emitter saturation voltage • High-speed switching Applicaitons • Voltage regulators, relay drivers, lamp drivers, electrical equipment

ONSEMI

安森美半导体

Bipolar Transistor -50V, -2A, Low VCE(sat), PNP Single NMP

Bipolar Transistor -50V, -2A, Low VCE(sat), PNP Single NMP Features • Adoption of MBIT processes • Large current capacity • Low collector-to-emitter saturation voltage • High-speed switching Applicaitons • Voltage regulators, relay drivers, lamp drivers, electrical equipment

ONSEMI

安森美半导体

Power transistor for high-speed switching applications

TOSHIBA

东芝

High Voltage Switching Applications

文件:213 Kbytes Page:5 Pages

TOSHIBA

东芝

Power transistor for high-speed switching applications

TOSHIBA

东芝

General Purpose Transistor

COMCHIP

典琦

封装/外壳:SC-71 包装:卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带 描述:TRANS PNP 50V 2A 3NMP 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个

ONSEMI

安森美半导体

FOR GENERAL PURPOSE HIGH CURRENT DRIVE APPLICATION SILICON PNP EPITAXIAL TYPE

文件:130.72 Kbytes Page:4 Pages

ISAHAYA

谏早电子

2SA218产品属性

  • 类型

    描述

  • 型号

    2SA218

  • 功能描述

    TRANS PNP 50V 5A TO-220ML

  • RoHS

  • 类别

    分离式半导体产品 >> 晶体管(BJT) - 单路

  • 系列

    -

  • 标准包装

    1

  • 系列

    -

  • 晶体管类型

    NPN 电流 -

  • 集电极(Ic)(最大)

    1A 电压 -

  • 集电极发射极击穿(最大)

    30V

  • Ib、Ic条件下的Vce饱和度(最大)

    200mV @ 100mA,1A 电流 -

  • 集电极截止(最大)

    100nA 在某 Ic、Vce

  • 时的最小直流电流增益(hFE)

    300 @ 500mA,5V 功率 -

  • 最大

    710mW 频率 -

  • 转换

    100MHz

  • 安装类型

    表面贴装

  • 封装/外壳

    TO-236-3,SC-59,SOT-23-3

  • 供应商设备封装

    SOT-23-3(TO-236)

  • 包装

    Digi-Reel®

  • 其它名称

    MMBT489LT1GOSDKR

更新时间:2025-10-30 14:31:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
TOSHIBA
1922+
NA
9200
公司原装现货假一罚十特价欢迎来电咨询
TOSHIBA
原厂封装
9800
原装进口公司现货假一赔百
TOSHIBA
25+
TO-TO-220
12300
独立分销商 公司只做原装 诚心经营 免费试样正品保证
ONSemiconductor
24+
NA
3000
进口原装正品优势供应
TOSHIBA/东芝
20+
TO-252
69052
原装优势主营型号-可开原型号增税票
TOSHIBA/东芝
24+
NA/
3500
优势代理渠道,原装正品,可全系列订货开增值税票
TOSHIBA/东芝
20+
TO-252
2000
一级代理,专注军工、汽车、医疗、工业、新能源、电力
ON
23+
TO-126L
6806
正规渠道,只有原装!
TOSHIBA/东芝
TO-220
22+
6000
十年配单,只做原装
NK/南科功率
2025+
TO-252
986966
国产

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