2SA215晶体管资料
2SA215别名：2SA215三极管、2SA215晶体管、2SA215晶体三极管
2SA215生产厂家：日本日电公司
2SA215制作材料：Ge-PNP
2SA215性质：调频 （FM）_中频放大 （ZF）
2SA215封装形式：直插封装
2SA215极限工作电压：15V
2SA215最大电流允许值：0.002A
2SA215最大工作频率：120MHZ
2SA215引脚数：3
2SA215最大耗散功率：
2SA215放大倍数：
2SA215图片代号：C-47
2SA215vtest：15
2SA215htest：120000000
- 2SA215atest：0.002
2SA215wtest：0
2SA215代换 2SA215用什么型号代替：AF106,AF124,AF125,AF126,AF200,AF306,2N3323,2N3324,2N3325,2SA340,2SA341,2SA342,3AG53D,
2SA215价格
参考价格：￥14.5199
型号：2SA2151 品牌：Sanken 备注：这里有2SA215多少钱，2026年最近7天走势，今日出价，今日竞价，2SA215批发/采购报价，2SA215行情走势销售排行榜，2SA215报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
Audio Amplification Transistor Description By adapting the Sanken unique wafer-thinner technique, these PNP power transistors achieve power-up by decreasing thermal resistance, and provide higher voltage avalanche breakdown rating. The high power-handling capacity of the TO-3P package allows a smaller footprint on the circuit | ALLEGRO |   | ||
isc Silicon PNP Power Transistor DESCRIPTION • High Collector-Emitter Breakdown Voltage V(BR)CEO= -200V(Min) • Good Linearity of hFE • Complement to Type 2SC6011 APPLICATIONS • Designed for audio and general purpose applications | ISC 无锡固电 | | ||
Silicon PNP Power Transistor DESCRIPTION • High Collector-Emitter Breakdown Voltage V(BR)CEO= -200V(Min) • Good Linearity of hFE • Complement to Type 2SC6011 APPLICATIONS • Designed for audio and general purpose applications | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | ||
Audio Amplification Transistor Description By adapting the Sanken unique wafer-thinner technique, these PNP power transistors achieve power-up by decreasing thermal resistance, and provide higher voltage avalanche breakdown rating. The high power-handling capacity of the TO-3P package allows a smaller footprint on the circuit | SANKEN 三垦 | | ||
双极型晶体管 硅 PNP 平面外延型三极管 ・适用于功放输出段。\n・有配对品。\n・ASO 较广。; | SANKEN 三垦 | | ||
双极型晶体管 硅 PNP 平面外延型三极管 ・适用于功放输出段。\n・有配对品。\n・ASO 较广。; | SANKEN 三垦 | | ||
Silicon PNP Power Transistor DESCRIPTION • High Collector-Emitter Breakdown Voltage V(BR)CEO= -230V(Min) • Good Linearity of hFE • Complement to Type 2SC6011 APPLICATIONS • Designed for audio and general purpose applications | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | ||
Audio Amplification Transistor Description By adapting the Sanken unique wafer-thinner technique, these PNP power transistors achieve power-up by decreasing thermal resistance, and provide higher voltage avalanche breakdown rating. The high power-handling capacity of the TO-3P package allows a smaller footprint on the circuit | SANKEN 三垦 | | ||
Complement to Type 2SC6011A DESCRIPTION • High Collector-Emitter Breakdown Voltage V(BR)CEO= -230V(Min) • Good Linearity of hFE • Complement to Type 2SC6011A APPLICATIONS • Designed for audio and general purpose applications | ISC 无锡固电 | | ||
Audio Amplification Transistor Description By adapting the Sanken unique wafer-thinner technique, these PNP power transistors achieve power-up by decreasing thermal resistance, and provide higher voltage avalanche breakdown rating. The high power-handling capacity of the TO-3P package allows a smaller footprint on the circuit | ALLEGRO | | ||
PNP Epitaxial Planar Silicon Transistor High-Current Switching Applications PNP Epitaxial Planar Silicon Transistor Features • Adoption of MBIT process. • Low saturation voltage. • High current capacity and wide ASO. Applications • Voltage regulators, relay drivers, lamp drivers, electrical equipment. | SANYO 三洋 | | ||
Bipolar Transistor -50V, -2A, Low VCE(sat), PNP Single PCP Bipolar Transistor -50V, -2A, Low VCE(sat), PNP Single PCP Features • Adoption of MBIT process • Low saturation voltage • Large current capacity and wide ASO Applicaitons • Voltage regulators, relay drivers, lamp drivers, electrical equipment | ONSEMI 安森美半导体 | | ||
Bipolar Transistor -50V, -2A, Low VCE(sat), PNP Single PCP Bipolar Transistor -50V, -2A, Low VCE(sat), PNP Single PCP Features • Adoption of MBIT process • Low saturation voltage • Large current capacity and wide ASO Applicaitons • Voltage regulators, relay drivers, lamp drivers, electrical equipment | ONSEMI 安森美半导体 | | ||
Trans GP BJT PNP 200V 15A 3-Pin(3+Tab) TO-3P Bulk | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | ||
封装/外壳：TO-3P-3，SC-65-3 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS PNP 230V 15A TO3P 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 | SANKEN 三垦 | | ||
Bipolar Transistor 文件：282.93 Kbytes Page：5 Pages | ONSEMI 安森美半导体 | | ||
Bipolar Transistor 文件：282.93 Kbytes Page：5 Pages | ONSEMI 安森美半导体 | | ||
Bipolar Transistor 文件：282.93 Kbytes Page：5 Pages | ONSEMI 安森美半导体 | | ||
封装/外壳：TO-243AA 包装：散装 描述：TRANS PNP 50V 2A PCP 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 | ONSEMI 安森美半导体 | | ||
General-Purpose Amplifier Applications 文件：147.95 Kbytes Page：3 Pages | TOSHIBA 东芝 | | ||
Silicon PNP Epitaxial Type (PCT Process) General-Purpose Amplifier Applications 文件：136.06 Kbytes Page：3 Pages | TOSHIBA 东芝 | | ||
General-Purpose Amplifier Applications 文件：147.95 Kbytes Page：3 Pages | TOSHIBA 东芝 | | ||
General-Purpose Amplifier Applications 文件：264.75 Kbytes Page：4 Pages | TOSHIBA 东芝 | |
2SA215产品属性
- 类型
描述
- IC：
-15A
- PC：
160W
- hFEmin：
50
- hFEmax：
180
- hFE条件VCE：
-4V
- hFE条件IC：
-3A
- VCE（sat）max：
-0.5V
- 配对：
2SC6011
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
三肯一对11 |
26+ |
TO3P |
86720 |
全新原装正品价格最实惠 假一赔百 |
|||
SANKEN/三垦 |
25+ |
TO-3P |
45000 |
SANKEN/三垦全新现货2SA2151A即刻询购立享优惠#长期有排单订 |
|||
SANKEN/三垦 |
23+ |
TO-3P |
60000 |
原厂授权代理,海外优势订货渠道。可提供大量库存,详 |
|||
26+ |
N/A |
70000 |
一级代理-主营优势-实惠价格-不悔选择 |
||||
SANKEN |
18+ |
TO-3P |
85600 |
保证进口原装可开17%增值税发票 |
|||
三肯原装一对11 |
25+23+ |
TO3P |
42791 |
绝对原装正品全新进口深圳现货 |
|||
SANKEN |
21+ |
明嘉莱只做原装正品现货 |
2510000 |
TO3P-3L |
|||
SANKEN |
2447 |
TO-3P |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
|||
SANKEN |
23+ |
TO3P |
6500 |
专注配单,只做原装进口现货 |
|||
SANKEN |
23+ |
TO3P |
50000 |
全新原装正品现货,支持订货 |
2SA215芯片相关品牌
2SA215规格书下载地址
2SA215参数引脚图相关
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2SA215数据表相关新闻
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2020-4-24
DdatasheetPDF页码索引
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