小信号晶体管

FOR HIGH CURRENT APPLICATION SILICON PNP EPITAXIAL TYPE MICRO(FRAME TYPE)

DESCRIPTION 2SA2002 is a silicon PNP exitaxial type transistor designed with high collector current, small VCE(sat). APPLICATION Small type motor drive, relay drive, power supply application.

Silicon PNP epitaxial planer type

Silicon PNP epitaxial planar type For power amplification ■ Features • High forward current transfer ratio hFE • Satisfactory linearity of forward current transfer ratio hFE • Dielectric breakdown voltage of the package: > 5 kV • High−speed switching

Silicon PNP Power Transistor

DESCRIPTION • Silicon PNP epitaxial planner type • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS • Power amplifier applications • Driver stage amplifier applications

For Audio Amplifier output - TV Velosity Modulation (-160V,-1.5A)

Features 1) Electrical characteristics of DC current gain hFE is flat. 2) High breakdown voltage. (BVCEO= 160V(Min.), at IC= 1mA) 3) High fT. (Typ. 150MHz, at VCE= 10V, IE=0.2A, f=100MHz) 4) Wide SOA. Applications Power amplifier Velosity modulation Structure PNP Silicon Epitaxia

High-speed Switching Transistor (−60V,−12A)

Features 1) High switching speed. (Typ. tf = 0.15µs at Ic = −6A) 2) Low saturation voltage. (Typ. VCE(sat)= −0.2V at IC / IB = −6A / −0.3A) 3) Wide SOA. (safe operating area) 4) Complements the 2SC5526.

Silicon PNP epitaxial planer type

For low-frequency high breakdown voltage amplification ■ Features • High collector to emitter voltage VCEO • Low noise voltage NV

Driver Transistor

Driver Transistor

For high speed switching (−60V, −5A)

文件：57.59 Kbytes Page：1 Pages

For high speed switching (−60V, −5A

文件：57.59 Kbytes Page：1 Pages

封装/外壳：TO-220-3 整包 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS PNP 60V 12A TO220FN 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

封装/外壳：SC-70，SOT-323 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS PNP 120V 0.02A SMINI3 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个