FORHIGHCURRENTAPPLICATIONSILICONPNPEPITAXIALTYPEMICRO(FRAMETYPE)

DESCRIPTION 2SA2002isasiliconPNPexitaxialtypetransistordesignedwithhighcollectorcurrent,smallVCE(sat). APPLICATION Smalltypemotordrive,relaydrive,powersupplyapplication.

SiliconPNPepitaxialplanertype

SiliconPNPepitaxialplanartype Forpoweramplification ■Features •HighforwardcurrenttransferratiohFE •SatisfactorylinearityofforwardcurrenttransferratiohFE •Dielectricbreakdownvoltageofthepackage:>5kV •High−speedswitching

SiliconPNPPowerTransistor

DESCRIPTION •SiliconPNPepitaxialplannertype •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation APPLICATIONS •Poweramplifierapplications •Driverstageamplifierapplications

ForAudioAmplifieroutput-TVVelosityModulation(-160V,-1.5A)

Features 1)ElectricalcharacteristicsofDCcurrentgainhFEisflat. 2)Highbreakdownvoltage.(BVCEO=160V(Min.),atIC=1mA) 3)HighfT.(Typ.150MHz,atVCE=10V,IE=0.2A,f=100MHz) 4)WideSOA. Applications Poweramplifier Velositymodulation Structure PNPSiliconEpitaxia

High-speedSwitchingTransistor(−60V,−12A)

Features 1)Highswitchingspeed. (Typ.tf=0.15µsatIc=−6A) 2)Lowsaturationvoltage. (Typ.VCE(sat)=−0.2VatIC/IB=−6A/−0.3A) 3)WideSOA.(safeoperatingarea) 4)Complementsthe2SC5526.

SiliconPNPepitaxialplanertype

Forlow-frequencyhighbreakdownvoltageamplification ■Features •HighcollectortoemittervoltageVCEO •LownoisevoltageNV

Forhighspeedswitching(−60V,−5A)

文件：57.59 Kbytes Page：1 Pages

Forhighspeedswitching(−60V,−5A

文件：57.59 Kbytes Page：1 Pages

封装/外壳：TO-220-3 整包 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS PNP 60V 12A TO220FN 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

封装/外壳：SC-70，SOT-323 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS PNP 120V 0.02A SMINI3 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个