小信号晶体管

FOR HIGH CURRENT APPLICATION SILICON PNP EPITAXIAL TYPE MICRO(FRAME TYPE)

DESCRIPTION 2SA2002 is a silicon PNP exitaxial type transistor designed with high collector current, small VCE(sat). APPLICATION Small type motor drive, relay drive, power supply application.

Silicon PNP Power Transistor

DESCRIPTION • Silicon PNP epitaxial planner type • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS • Power amplifier applications • Driver stage amplifier applications

Silicon PNP epitaxial planer type

Silicon PNP epitaxial planar type For power amplification ■ Features • High forward current transfer ratio hFE • Satisfactory linearity of forward current transfer ratio hFE • Dielectric breakdown voltage of the package: > 5 kV • High−speed switching

For Audio Amplifier output - TV Velosity Modulation (-160V,-1.5A)

Features 1) Electrical characteristics of DC current gain hFE is flat. 2) High breakdown voltage. (BVCEO= 160V(Min.), at IC= 1mA) 3) High fT. (Typ. 150MHz, at VCE= 10V, IE=0.2A, f=100MHz) 4) Wide SOA. Applications Power amplifier Velosity modulation Structure PNP Silicon Epitaxia

High-speed Switching Transistor (−60V,−12A)

Features 1) High switching speed. (Typ. tf = 0.15µs at Ic = −6A) 2) Low saturation voltage. (Typ. VCE(sat)= −0.2V at IC / IB = −6A / −0.3A) 3) Wide SOA. (safe operating area) 4) Complements the 2SC5526.

Silicon PNP epitaxial planer type

For low-frequency high breakdown voltage amplification ■ Features • High collector to emitter voltage VCEO • Low noise voltage NV

Driver Transistor

Driver Transistor

For high speed switching (−60V, −5A)

文件：57.59 Kbytes Page：1 Pages

For high speed switching (−60V, −5A

文件：57.59 Kbytes Page：1 Pages

封装/外壳：TO-220-3 整包 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS PNP 60V 12A TO220FN 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

封装/外壳：SC-70，SOT-323 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS PNP 120V 0.02A SMINI3 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个