2SA198晶体管资料

  • 2SA198别名:2SA198三极管、2SA198晶体管、2SA198晶体三极管

  • 2SA198生产厂家:日本三洋公司

  • 2SA198制作材料:Ge-PNP

  • 2SA198性质:调幅 (AM)_中频放大 (ZF)

  • 2SA198封装形式:直插封装

  • 2SA198极限工作电压:15V

  • 2SA198最大电流允许值:0.015A

  • 2SA198最大工作频率:<1MHZ或未知

  • 2SA198引脚数:3

  • 2SA198最大耗散功率

  • 2SA198放大倍数

  • 2SA198图片代号:C-47

  • 2SA198vtest:15

  • 2SA198htest:999900

  • 2SA198atest:0.015

  • 2SA198wtest:0

  • 2SA198代换 2SA198用什么型号代替:AF124,AF125,AF126,AF127,AF200,2N3323,2N3324,2N3325,2SA201,2SA202,2SA203,3AG54B,

型号 功能描述 生产厂家&企业 LOGO 操作

PNPSiliconTransistor(Generalsmallsignalamplifier)

Description •Generalsmallsignalamplifier Features •Lowcollectorsaturationvoltage:VCE(sat)=-0.3V(Max.) •Lowoutputcapacitance:Cob=4pF(Typ.) •Complementarypairwith2SC5343

AUK

AUK corp

AUK

Generalsmallsignalamplifier

Description •Generalsmallsignalamplifier Features •Lowcollectorsaturationvoltage :VCE(sat)=-0.3V(Max.) •Lowoutputcapacitance:Cob=4pF(Typ.) •Complementarypairwith2SC5343

KODENSHIKODENSHI_AUK CORP.

可天士可天士光电子集团

KODENSHI

PNPPlasticEncapsulatedTransistor

FEATURES Lowcollectorsaturationvoltage:VCE(sat)=-0.3V(Max.) Lowoutputcapacitance:Cob=4pF(Typ.) Complementsofthe2SC5343

SECOSSeCoS Halbleitertechnologie GmbH

喜可士喜可士股份有限公司

SECOS

TO-92Plastic-EncapsulateTransistors

TRANSISTOR(PNP) FEATURES •LowCollectorSaturationVoltage:VCE(sat)=-0.3V(Max.) •LowOutputCapacitance:Cob=4pF(Typ.) •ComplementaryPairwith2SC5343

JIANGSUJiangsu Changjiang Electronics Technology Co., Ltd

长电科技江苏长电科技股份有限公司

JIANGSU

SiliconPNPtransistorinaTO-92PlasticPackage

Descriptions SiliconPNPtransistorinaTO-92PlasticPackage. Features LowVCE(sat),lowoutputcapacitance,complementarypairwith2SC5343. Applications Generalsmallsignalamplifierapplications.

FOSHANFoshan Blue Rocket Electronics Co.,Ltd.

蓝箭电子佛山市蓝箭电子股份有限公司

FOSHAN

TRANSISTOR(PNP)

FEATURES •Lowcollectorsaturationvoltage:VCE(sat)=-0.3V(Max.) •Lowoutputcapacitance:Cob=4pF(Typ.) •Complementarypairwith2SC5343

KOOCHIN

SHENZHEN KOO CHIN ELECTRONICS CO., LTD.

KOOCHIN

Generalsmallsignalamplifier

Description •Generalsmallsignalamplifier Features •Lowcollectorsaturationvoltage:VCE(sat)=-0.3V(Max.) •Lowoutputcapacitance:Cob=4pF(Typ.) •Complementarypairwith2SC5343E

KODENSHIKODENSHI_AUK CORP.

可天士可天士光电子集团

KODENSHI

PNPSiliconTransistor(Generalsmallsignalamplifier)

Description •Generalsmallsignalamplifier Features •Lowcollectorsaturationvoltage:VCE(sat)=-0.3V(Max.) •Lowoutputcapacitance:Cob=4pF(Typ.) •Complementarypairwith2SC5343E

AUK

AUK corp

AUK

PNPSiliconTransistor(Generalsmallsignalamplifier)

Description •Generalsmallsignalamplifier Features •Lowcollectorsaturationvoltage:VCE(sat)=-0.3V(Max.) •Lowoutputcapacitance:Cob=4pF(Typ.) •Complementarypairwith2SC5343EF

AUK

AUK corp

AUK

Generalsmallsignalamplifier

Description •Generalsmallsignalamplifier Features •Lowcollectorsaturationvoltage:VCE(sat)=-0.3V(Max.) •Lowoutputcapacitance:Cob=4pF(Typ.) •Complementarypairwith2SC5343EF

KODENSHIKODENSHI_AUK CORP.

可天士可天士光电子集团

KODENSHI

PNPSiliconTransistors

Features •LowCollectorSaturationVoltage:VCE(sat)=0.3V(Max.) •LowOutputCapacitance:Cob=4.0pF(Typ.) •ComplementaryPairWith2SC5343 •Marking:A1980 •LeadFreeFinish/RoHSCompliant(PSuffixdesignatesRoHSCompliant.Seeorderinginformation) •EpoxymeetsUL94V-0flammability

MCCMicro Commercial Components

美微科美微科半导体股份有限公司

MCC

PNPSiliconTransistors

Features •LowCollectorSaturationVoltage:VCE(sat)=0.3V(Max.) •LowOutputCapacitance:Cob=4.0pF(Typ.) •ComplementaryPairWith2SC5343 •Marking:A1980 •LeadFreeFinish/RoHSCompliant(PSuffixdesignatesRoHSCompliant.Seeorderinginformation) •EpoxymeetsUL94V-0flammability

MCCMicro Commercial Components

美微科美微科半导体股份有限公司

MCC

Generalsmallsignalamplifier

Description •Generalsmallsignalamplifier Features •Lowcollectorsaturationvoltage:VCE(sat)=-0.3V(Max.) •Lowoutputcapacitance:Cob=4pF(Typ.) •Complementarypairwith2SC5343M

KODENSHIKODENSHI_AUK CORP.

可天士可天士光电子集团

KODENSHI

PNPSiliconTransistor(Generalsmallsignalamplifier)

Description •Generalsmallsignalamplifier Features •Lowcollectorsaturationvoltage:VCE(sat)=-0.3V(Max.) •Lowoutputcapacitance:Cob=4pF(Typ.) •Complementarypairwith2SC5343M

AUK

AUK corp

AUK

PNPSiliconTransistor

Description •Generalsmallsignalamplifier Features •Lowcollectorsaturationvoltage:VCE(sat)=-0.3V(Max.) •Lowoutputcapacitance:Cob=4pF(Typ.) •Complementarypairwith2SC5343N

AUK

AUK corp

AUK

PNPSiliconTransistors

Features •LowCollectorSaturationVoltage:VCE(sat)=0.3V(Max.) •LowOutputCapacitance:Cob=4.0pF(Typ.) •ComplementaryPairWith2SC5343 •Marking:A1980 •LeadFreeFinish/RoHSCompliant(PSuffixdesignatesRoHSCompliant.Seeorderinginformation) •EpoxymeetsUL94V-0flammability

MCCMicro Commercial Components

美微科美微科半导体股份有限公司

MCC

Generalsmallsignalamplifier

Description •Generalsmallsignalamplifier Features •Lowcollectorsaturationvoltage:VCE(sat)=-0.3V(Max.) •Lowoutputcapacitance:Cob=4pF(Typ.) •Complementarypairwith2SC5343S

KODENSHIKODENSHI_AUK CORP.

可天士可天士光电子集团

KODENSHI

PNPSiliconTransistor(Generalsmallsignalamplifier)

Description •Generalsmallsignalamplifier Features •Lowcollectorsaturationvoltage:VCE(sat)=-0.3V(Max.) •Lowoutputcapacitance:Cob=4pF(Typ.) •Complementarypairwith2SC5343S

AUK

AUK corp

AUK

PNPSiliconTransistor(Generalsmallsignalamplifier)

Description •Generalsmallsignalamplifier Features •Lowcollectorsaturationvoltage:VCE(sat)=-0.3V(Max.) •Lowoutputcapacitance:Cob=4pF(Typ.) •Complementarypairwith2SC5343SF

AUK

AUK corp

AUK

Generalsmallsignalamplifier

Description •Generalsmallsignalamplifier Features •Lowcollectorsaturationvoltage:VCE(sat)=-0.3V(Max.) •Lowoutputcapacitance:Cob=4pF(Typ.) •Complementarypairwith2SC5343SF

KODENSHIKODENSHI_AUK CORP.

可天士可天士光电子集团

KODENSHI

PNPSiliconTransistor(Generalsmallsignalamplifier)

Description •Generalsmallsignalamplifier Features •Lowcollectorsaturationvoltage:VCE(sat)=-0.3V(Max.) •Lowoutputcapacitance:Cob=4pF(Typ.) •Complementarypairwith2SC5343U

AUK

AUK corp

AUK

Generalsmallsignalamplifier

Description •Generalsmallsignalamplifier Features •Lowcollectorsaturationvoltage:VCE(sat)=-0.3V(Max.) •Lowoutputcapacitance:Cob=4pF(Typ.) •Complementarypairwith2SC5343U

KODENSHIKODENSHI_AUK CORP.

可天士可天士光电子集团

KODENSHI

Generalsmallsignalamplifier

Description •Generalsmallsignalamplifier Features •Lowcollectorsaturationvoltage:VCE(sat)=-0.3V(Max.) •Lowoutputcapacitance:Cob=4pF(Typ.) •Complementarypairwith2SC5343UF

KODENSHIKODENSHI_AUK CORP.

可天士可天士光电子集团

KODENSHI

PNPSiliconTransistor(Generalsmallsignalamplifier)

Description •Generalsmallsignalamplifier Features •Lowcollectorsaturationvoltage:VCE(sat)=-0.3V(Max.) •Lowoutputcapacitance:Cob=4pF(Typ.) •Complementarypairwith2SC5343UF

AUK

AUK corp

AUK

PNPSiliconTransistors

Features •LowCollectorSaturationVoltage:VCE(sat)=0.3V(Max.) •LowOutputCapacitance:Cob=4.0pF(Typ.) •ComplementaryPairWith2SC5343 •Marking:A1980 •LeadFreeFinish/RoHSCompliant(PSuffixdesignatesRoHSCompliant.Seeorderinginformation) •EpoxymeetsUL94V-0flammability

MCCMicro Commercial Components

美微科美微科半导体股份有限公司

MCC

Audiopoweramplifierapplication

Description •Audiopoweramplifierapplication Features •HighhFE:hFE=100~320 •Complementarypairwith2SC5344

KODENSHIKODENSHI_AUK CORP.

可天士可天士光电子集团

KODENSHI

SiliconPNPtransistorinaTO-92PlasticPackage

Descriptions SiliconPNPtransistorinaTO-92PlasticPackage. Features HighhFE,complementarypairwith2SC5344. Applications Audiopoweramplifierapplication.

FOSHANFoshan Blue Rocket Electronics Co.,Ltd.

蓝箭电子佛山市蓝箭电子股份有限公司

FOSHAN

PNPSiliconTransistor(Audiopoweramplifierapplication)

Description •Audiopoweramplifierapplication Features •HighhFE:hFE=100~320 •Complementarypairwith2SC5344

AUK

AUK corp

AUK

PNPPlasticEncapsulatedTransistor

-0.8A,-35VPNPPlasticEncapsulatedTransistor FEATURES HighDCCurrentGain ComplementaryPairwith2SC5344

SECOSSeCoS Halbleitertechnologie GmbH

喜可士喜可士股份有限公司

SECOS

TO-92Plastic-EncapsulateTransistors

TRANSISTOR(PNP) FEATURES ●HighDCCurrentGain ●ComplementaryPairwith2SC5344 APPLICATIONS ●AudioPowerAmplifierApplication

JIANGSUJiangsu Changjiang Electronics Technology Co., Ltd

长电科技江苏长电科技股份有限公司

JIANGSU

TO-92Plastic-EncapsulateTransistors

Features HighDCCurrentGain ComplementaryPairwith2SC5344 APPLICATIONS AudioPowerAmplifierApplication

DGNJDZNanjing International Group Co

南晶电子东莞市南晶电子有限公司

DGNJDZ

PNPSiliconTransistor

Description •Audiopoweramplifierapplication Features •HighhFE:hFE=100~320 •Complementarypairwith2SC5344N

AUK

AUK corp

AUK

PNPSiliconTransistor(Audiopoweramplifierapplication)

Description •Audiopoweramplifierapplication Features •HighhFE:hFE=100~320 •Complementarypairwith2SC5344S

AUK

AUK corp

AUK

SiliconPNPtransistorinaSOT-23PlasticPackage

Descriptions SiliconPNPtransistorinaSOT-23PlasticPackage. Features HighhFE,complementarypairwith2SC5344S. Applications Audiopoweramplifierapplication.

FOSHANFoshan Blue Rocket Electronics Co.,Ltd.

蓝箭电子佛山市蓝箭电子股份有限公司

FOSHAN

Audiopoweramplifierapplication

Description •Audiopoweramplifierapplication Features •HighhFE:hFE=100~320 •Complementarypairwith2SC5344S

KODENSHIKODENSHI_AUK CORP.

可天士可天士光电子集团

KODENSHI

PNPSiliconTransistor

PNPSiliconTransistor Features ●HighHfe:.hFE=100to320

KEXINGuangdong Kexin Industrial Co.,Ltd

科信电子广东科信实业有限公司

KEXIN

PNPSiliconTransistor(Audiopoweramplifierapplication)

Description •Audiopoweramplifierapplication Features •HighhFE:hFE=100~320 •Complementarypairwith2SC5344SF

AUK

AUK corp

AUK

Audiopoweramplifierapplication

Description •Audiopoweramplifierapplication Features •HighhFE:hFE=100~320 •Complementarypairwith2SC5344S

KODENSHIKODENSHI_AUK CORP.

可天士可天士光电子集团

KODENSHI

TO-92Plastic-EncapsulateTransistors

Features HighDCCurrentGain ComplementaryPairwith2SC5344 APPLICATIONS AudioPowerAmplifierApplication

DGNJDZNanjing International Group Co

南晶电子东莞市南晶电子有限公司

DGNJDZ

SiliconPNPepitaxialplanertype

SiliconPNPepitaxialplanertype Forlow-frequencyhighbreakdownvoltageamplification Complementaryto2SC5346 ■Features ●SatisfactoryfowardcurrenttransferratiohFEcollectorcurrentIC characteristics. ●HighcollectortoemittervoltageVCEO. ●Smallcollectoroutputcapacitan

PanasonicPanasonic Semiconductor

松下松下电器

Panasonic

TRANSISTOR(POWERAMPLIFIERAPPLICATIONS)

PowerAmplifierApplications •Highbreakdownvoltage:VCEO=−230V(min) •Complementaryto2SC5358 •Recommendedfor80-Whigh-fidelityaudiofrequencyamplifieroutputstage

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA

SiliconPNPPowerTransistors

DESCRIPTION ·WithTO-3P(I)package ·Complementtotype2SC5358 APPLICATIONS ·Poweramplifierapplications ·Recommendfor80Whighfidelityaudiofrequencyamplifieroutputstage

JMNICQuanzhou Jinmei Electronic Co.,Ltd.

锦美电子泉州锦美电子有限公司

JMNIC

SiliconPNPPowerTransistors

DESCRIPTION ·WithTO-3P(I)package ·Complementtotype2SC5358 APPLICATIONS ·Poweramplifierapplications ·Recommendfor80Whighfidelityaudiofrequencyamplifieroutputstage

SAVANTIC

Savantic, Inc.

SAVANTIC

SiliconPNPPowerTransistors

DESCRIPTION ·WithTO-3P(I)package ·Complementtotype2SC5358 APPLICATIONS ·Poweramplifierapplications ·Recommendfor80Whighfidelityaudiofrequencyamplifieroutputstage

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

SiliconPNPPowerTransistor

DESCRIPTION •HighCurrentCapability •HighPowerDissipation •HighCollector-EmitterBreakdownVoltage- :V(BR)CEO=-230V(Min) •ComplementtoType2SC5358 APPLICATIONS •Poweramplifierapplications •RecommendforSOWhighfidelityaudiofrequencyamplifieroutput

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

NJSEMI

BipolarSmall-SignalTransistors

MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA

BipolarSmall-SignalTransistors

MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA

SiliconPNPPowerTransistor

DESCRIPTION •HighCurrentCapability •HighPowerDissipation •HighCollector-EmitterBreakdownVoltage-:V(BR)CEO=-230V(Min) •ComplementtoType2SC5359 APPLICATIONS •Poweramplifierapplications •Recommendfor100Whighfidelityaudiofrequencyamplifieroutputstageapplications

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

NJSEMI

TRANSISTOR(POWERAMPLIFIERAPPLICATIONS)

PowerAmplifierApplications •Highbreakdownvoltage:VCEO=−230V(min) •Complementaryto2SC5359 •Recommendedfor100-Whigh-fidelityaudiofrequencyamplifieroutputstage.

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA

SiliconPNPPowerTransistors

DESCRIPTION •WithTO-3PLpackage •Complementtotype2SC5359 •Highcollectorvoltage APPLICATIONS •Poweramplifierapplications •Recommendedfor100Whighfidelityaudiofrequencyamplifieroutputstage

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

SiliconPNPPowerTransistors

DESCRIPTION •WithTO-3PLpackage •Complementtotype2SC5359 •Highcollectorvoltage APPLICATIONS •Poweramplifierapplications •Recommendedfor100Whighfidelityaudiofrequencyamplifieroutputstage

SAVANTIC

Savantic, Inc.

SAVANTIC

SiliconPNPPowerTransistors

DESCRIPTION •WithTO-3PLpackage •Complementtotype2SC5359 •Highcollectorvoltage APPLICATIONS •Poweramplifierapplications •Recommendedfor100Whighfidelityaudiofrequencyamplifieroutputstage

JMNICQuanzhou Jinmei Electronic Co.,Ltd.

锦美电子泉州锦美电子有限公司

JMNIC

SiliconPNPPowerTransistors

DESCRIPTION •WithTO-3PNpackage •Highcollector-emittervoltage APPLICATIONS •Foraudiofrequencypoweramplifier andindustrialuse

JMNICQuanzhou Jinmei Electronic Co.,Ltd.

锦美电子泉州锦美电子有限公司

JMNIC

SiliconPNPPowerTransistors

DESCRIPTION •WithTO-3PNpackage •Highcollector-emittervoltage APPLICATIONS •Foraudiofrequencypoweramplifier andindustrialuse

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

PNPSILICONTRANSISTORPOWERAMPLIFIERINDUSTRIALUSE

DESCRIPTION The2SA1988isPNPSiliconPowerTransistorthatdesignedforaudiofrequencypoweramplifier. FEATURES •HighVoltageVCEO=−200V •DCCurrentGainhFE=70to200 •TO-3PPackage

NECRenesas Electronics America

瑞萨日本瑞萨电子株式会社

NEC

SiliconPNPPowerTransistors

DESCRIPTION •WithTO-3PNpackage •Highcollector-emittervoltage APPLICATIONS •Foraudiofrequencypoweramplifier andindustrialuse

SAVANTIC

Savantic, Inc.

SAVANTIC

SiliconTransistor

PNPSILICONTRANSISTOR POWERAMPLIFIER DESCRIPTION The2SA1988isPNPSiliconPowerTransistorthatdesignedforaudiofrequencypoweramplifier. FEATURES •HighVoltageVCEO=–200V •DCCurrentGainhFE=70to200 •TO-3PPackage

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

RENESAS

TO-92Plastic-EncapsulateTransistors

文件:1.43235 Mbytes Page:4 Pages

DGNJDZNanjing International Group Co

南晶电子东莞市南晶电子有限公司

DGNJDZ

PNPPlasticEncapsulatedTransistor

文件:282.08 Kbytes Page:2 Pages

SECOSSeCoS Halbleitertechnologie GmbH

喜可士喜可士股份有限公司

SECOS

Generalsmallsignalamplifier

文件:223.34 Kbytes Page:4 Pages

KODENSHIKODENSHI_AUK CORP.

可天士可天士光电子集团

KODENSHI

2SA198产品属性

  • 类型

    描述

  • 型号

    2SA198

  • 制造商

    Distributed By MCM

  • 功能描述

    SUB ONLY TRANSISTOR TO-1 -15V -0.005A .03W

更新时间:2025-5-20 13:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
TOSHIBA
23+
SOT-223
63000
原装正品现货
TOSHIBA/东芝
22+
TO247
12245
现货,原厂原装假一罚十!
TOSHIBA/东芝
24+
TO-3P
9600
原装现货,优势供应,支持实单!
TOS
24+
TO247
80000
只做自己库存,全新原装进口正品假一赔百,可开13%增
TOSHIBA/东芝
23+
SOT-223
178094
原厂授权代理,海外优势订货渠道。可提供大量库存,详
TOSHIBA
24+
TO-3P
5500
只做原装正品现货 欢迎来电查询15919825718
24+
N/A
74000
一级代理-主营优势-实惠价格-不悔选择
TOSHIBA
15+
TO-264
11560
全新原装,现货库存,长期供应
TOSHIBA
2016+
TO-3P
6528
房间原装进口现货假一赔十
TOSHIBA/东芝
2447
TO-3P
100500
一级代理专营品牌!原装正品,优势现货,长期排单到货

2SA198芯片相关品牌

  • BILIN
  • Cree
  • DIT
  • ETC
  • HY
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  • OHMITE
  • RCD
  • SAMESKY
  • spansion
  • TOKEN
  • VBSEMI

2SA198数据表相关新闻