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2SA198晶体管资料

2SA198别名：2SA198三极管、2SA198晶体管、2SA198晶体三极管
2SA198生产厂家：日本三洋公司
2SA198制作材料：Ge-PNP
2SA198性质：调幅（AM）_中频放大（ZF）
2SA198封装形式：直插封装
2SA198极限工作电压：15V
2SA198最大电流允许值：0.015A
2SA198最大工作频率：<1MHZ或未知
2SA198引脚数：3
2SA198最大耗散功率：
2SA198放大倍数：
2SA198图片代号：C-47
2SA198vtest：15
2SA198htest：999900
2SA198atest：0.015
2SA198wtest：0

2SA198代换 2SA198用什么型号代替：AF124,AF125,AF126,AF127,AF200,2N3323,2N3324,2N3325,2SA201,2SA202,2SA203,3AG54B,

型号	功能描述	生产厂家企业	LOGO
2SA1980	PNP Silicon Transistor (General small signal amplifier) Description •General small signal amplifier Features •Low collector saturation voltage : VCE(sat)=-0.3V(Max.) •Low output capacitance : Cob=4pF(Typ.) •Complementary pair with 2SC5343	AUK	AUK
2SA1980	General small signal amplifier Description • General small signal amplifier Features • Low collector saturation voltage : VCE(sat)=-0.3V(Max.) • Low output capacitance : Cob=4pF(Typ.) • Complementary pair with 2SC5343	KODENSHI 可天士	KODENSHI
2SA1980	PNP Plastic Encapsulated Transistor FEATURES Low collector saturation voltage: VCE(sat)=-0.3V(Max.) Low output capacitance : Cob=4pF (Typ.) Complements of the 2SC5343	SECOS 喜可士	SECOS
2SA1980	TO-92 Plastic-Encapsulate Transistors TRANSISTOR (PNP) FEATURES • Low Collector Saturation Voltage: VCE(sat) =-0.3V(Max.) • Low Output Capacitance : Cob =4pF (Typ.) • Complementary Pair with 2SC5343	JIANGSU 长电科技	JIANGSU
2SA1980	Silicon PNP transistor in a TO-92 Plastic Package Descriptions Silicon PNP transistor in a TO-92 Plastic Package. Features Low VCE(sat),low output capacitance, complementary pair with 2SC5343. Applications General small signal amplifier applications.	FOSHAN 蓝箭电子	FOSHAN
2SA1980	TRANSISTOR (PNP) FEATURES • Low collector saturation voltage: VCE(sat) =-0.3V(Max.) • Low output capacitance : Cob =4pF (Typ.) • Complementary pair with 2SC5343	KOOCHIN 灏展电子	KOOCHIN
2SA1980E	General small signal amplifier Description • General small signal amplifier Features • Low collector saturation voltage : VCE(sat)=-0.3V(Max.) • Low output capacitance : Cob=4pF(Typ.) • Complementary pair with 2SC5343E	KODENSHI 可天士	KODENSHI
2SA1980E	PNP Silicon Transistor (General small signal amplifier) Description • General small signal amplifier Features • Low collector saturation voltage : VCE(sat)=-0.3V(Max.) • Low output capacitance : Cob=4pF(Typ.) • Complementary pair with 2SC5343E	AUK	AUK
2SA1980EF	PNP Silicon Transistor (General small signal amplifier) Description • General small signal amplifier Features • Low collector saturation voltage : VCE(sat)=-0.3V(Max.) • Low output capacitance : Cob=4pF(Typ.) • Complementary pair with 2SC5343EF	AUK	AUK
2SA1980EF	General small signal amplifier Description • General small signal amplifier Features • Low collector saturation voltage : VCE(sat)=-0.3V(Max.) • Low output capacitance : Cob=4pF(Typ.) • Complementary pair with 2SC5343EF	KODENSHI 可天士	KODENSHI
2SA1980-G	PNP Silicon Transistors Features • Low Collector Saturation Voltage: VCE(sat)=0.3V(Max.) • Low Output Capacitance: Cob=4.0pF(Typ.) • Complementary Pair With 2SC5343 • Marking : A1980 • Lead Free Finish/RoHS Compliant (P Suffix designates RoHS Compliant. See ordering information) • Epoxy meets UL 94 V-0 flammability	MCC	MCC
2SA1980-L	PNP Silicon Transistors Features • Low Collector Saturation Voltage: VCE(sat)=0.3V(Max.) • Low Output Capacitance: Cob=4.0pF(Typ.) • Complementary Pair With 2SC5343 • Marking : A1980 • Lead Free Finish/RoHS Compliant (P Suffix designates RoHS Compliant. See ordering information) • Epoxy meets UL 94 V-0 flammability	MCC	MCC
2SA1980M	General small signal amplifier Description • General small signal amplifier Features • Low collector saturation voltage : VCE(sat)=-0.3V(Max.) • Low output capacitance : Cob=4pF(Typ.) • Complementary pair with 2SC5343M	KODENSHI 可天士	KODENSHI
2SA1980M	PNP Silicon Transistor (General small signal amplifier) Description • General small signal amplifier Features • Low collector saturation voltage : VCE(sat)=-0.3V(Max.) • Low output capacitance : Cob=4pF(Typ.) • Complementary pair with 2SC5343M	AUK	AUK
2SA1980N	PNP Silicon Transistor Description • General small signal amplifier Features • Low collector saturation voltage : VCE(sat)=-0.3V(Max.) • Low output capacitance : Cob=4pF(Typ.) • Complementary pair with 2SC5343N	AUK	AUK
2SA1980-O	PNP Silicon Transistors Features • Low Collector Saturation Voltage: VCE(sat)=0.3V(Max.) • Low Output Capacitance: Cob=4.0pF(Typ.) • Complementary Pair With 2SC5343 • Marking : A1980 • Lead Free Finish/RoHS Compliant (P Suffix designates RoHS Compliant. See ordering information) • Epoxy meets UL 94 V-0 flammability	MCC	MCC
2SA1980S	General small signal amplifier Description •General small signal amplifier Features •Low collector saturation voltage : VCE(sat)=-0.3V(Max.) •Low output capacitance : Cob=4pF(Typ.) •Complementary pair with 2SC5343S	KODENSHI 可天士	KODENSHI
2SA1980S	PNP Silicon Transistor (General small signal amplifier) Description • General small signal amplifier Features • Low collector saturation voltage : VCE(sat)=-0.3V(Max.) • Low output capacitance : Cob=4pF(Typ.) • Complementary pair with 2SC5343S	AUK	AUK
2SA1980SF	PNP Silicon Transistor (General small signal amplifier) Description • General small signal amplifier Features • Low collector saturation voltage : VCE(sat)=-0.3V(Max.) • Low output capacitance : Cob=4pF(Typ.) • Complementary pair with 2SC5343SF	AUK	AUK
2SA1980SF	General small signal amplifier Description •General small signal amplifier Features •Low collector saturation voltage : VCE(sat)=-0.3V(Max.) •Low output capacitance : Cob=4pF(Typ.) •Complementary pair with 2SC5343SF	KODENSHI 可天士	KODENSHI
2SA1980U	PNP Silicon Transistor (General small signal amplifier) Description • General small signal amplifier Features • Low collector saturation voltage : VCE(sat)=-0.3V(Max.) • Low output capacitance : Cob=4pF(Typ.) • Complementary pair with 2SC5343U	AUK	AUK
2SA1980U	General small signal amplifier Description •General small signal amplifier Features •Low collector saturation voltage : VCE(sat)=-0.3V(Max.) •Low output capacitance : Cob=4pF(Typ.) •Complementary pair with 2SC5343U	KODENSHI 可天士	KODENSHI
2SA1980UF	General small signal amplifier Description •General small signal amplifier Features •Low collector saturation voltage : VCE(sat)=-0.3V(Max.) •Low output capacitance : Cob=4pF(Typ.) •Complementary pair with 2SC5343UF	KODENSHI 可天士	KODENSHI
2SA1980UF	PNP Silicon Transistor (General small signal amplifier) Description •General small signal amplifier Features •Low collector saturation voltage : VCE(sat)=-0.3V(Max.) •Low output capacitance : Cob=4pF(Typ.) •Complementary pair with 2SC5343UF	AUK	AUK
2SA1980-Y	PNP Silicon Transistors Features • Low Collector Saturation Voltage: VCE(sat)=0.3V(Max.) • Low Output Capacitance: Cob=4.0pF(Typ.) • Complementary Pair With 2SC5343 • Marking : A1980 • Lead Free Finish/RoHS Compliant (P Suffix designates RoHS Compliant. See ordering information) • Epoxy meets UL 94 V-0 flammability	MCC	MCC
2SA1981	Audio power amplifier application Description • Audio power amplifier application Features • High hFE : hFE=100~320 • Complementary pair with 2SC5344	KODENSHI 可天士	KODENSHI
2SA1981	Silicon PNP transistor in a TO-92 Plastic Package Descriptions Silicon PNP transistor in a TO-92 Plastic Package. Features High hFE, complementary pair with 2SC5344. Applications Audio power amplifier application.	FOSHAN 蓝箭电子	FOSHAN
2SA1981	PNP Silicon Transistor (Audio power amplifier application) Description •Audio power amplifier application Features •High hFE: hFE=100~320 •Complementary pair with 2SC5344	AUK	AUK
2SA1981	PNP Plastic Encapsulated Transistor -0.8 A, -35 V PNP Plastic Encapsulated Transistor FEATURES High DC Current Gain Complementary Pair with 2SC5344	SECOS 喜可士	SECOS
2SA1981	TO-92 Plastic-Encapsulate Transistors TRANSISTOR (PNP) FEATURES ● High DC Current Gain ● Complementary Pair with 2SC5344 APPLICATIONS ● Audio Power Amplifier Application	JIANGSU 长电科技	JIANGSU
2SA1981	丝印代码：A1981；TO-92 Plastic-Encapsulate Transistors Features High DC Current Gain Complementary Pair with 2SC5344 APPLICATIONS Audio Power Amplifier Application	DGNJDZ 南晶电子	DGNJDZ
2SA1981N	PNP Silicon Transistor Description • Audio power amplifier application Features • High hFE: hFE=100~320 • Complementary pair with 2SC5344N	AUK	AUK
2SA1981S	PNP Silicon Transistor (Audio power amplifier application) Description •Audio power amplifier application Features •High hFE: hFE=100~320 •Complementary pair with 2SC5344S	AUK	AUK
2SA1981S	Silicon PNP transistor in a SOT-23 Plastic Package Descriptions Silicon PNP transistor in a SOT-23 Plastic Package. Features High hFE, complementary pair with 2SC5344S. Applications Audio power amplifier application.	FOSHAN 蓝箭电子	FOSHAN
2SA1981S	Audio power amplifier application Description •Audio power amplifier application Features •High hFE: hFE=100~320 •Complementary pair with 2SC5344S	KODENSHI 可天士	KODENSHI
2SA1981SF	PNP Silicon Transistor PNP Silicon Transistor Features ● High Hfe:.hFE=100 to 320	KEXIN 科信电子	KEXIN
2SA1981SF	PNP Silicon Transistor (Audio power amplifier application) Description •Audio power amplifier application Features •High hFE: hFE=100~320 •Complementary pair with 2SC5344SF	AUK	AUK
2SA1981SF	Audio power amplifier application Description •Audio power amplifier application Features •High hFE: hFE=100~320 •Complementary pair with 2SC5344S	KODENSHI 可天士	KODENSHI
2SA1981-TA	丝印代码：A1981；TO-92 Plastic-Encapsulate Transistors Features High DC Current Gain Complementary Pair with 2SC5344 APPLICATIONS Audio Power Amplifier Application	DGNJDZ 南晶电子	DGNJDZ
2SA1982	Silicon PNP epitaxial planer type Silicon PNP epitaxial planer type For low-frequency high breakdown voltage amplification Complementary to 2SC5346 ■ Features ● Satisfactory foward current transfer ratio hFE collector current IC characteristics. ● High collector to emitter voltage VCEO. ● Small collector output capacitan	PANASONIC 松下	PANASONIC
2SA1986	TRANSISTOR (POWER AMPLIFIER APPLICATIONS) Power Amplifier Applications • High breakdown voltage: VCEO = −230 V (min) • Complementary to 2SC5358 • Recommended for 80-W high-fidelity audio frequency amplifier output stage	TOSHIBA 东芝	TOSHIBA
2SA1986	Silicon PNP Power Transistors DESCRIPTION ·With TO-3P(I) package ·Complement to type 2SC5358 APPLICATIONS ·Power amplifier applications ·Recommend for 80W high fidelity audio frequency amplifier output stage	JMNIC 锦美电子	JMNIC
2SA1986	Silicon PNP Power Transistors DESCRIPTION ·With TO-3P(I) package ·Complement to type 2SC5358 APPLICATIONS ·Power amplifier applications ·Recommend for 80W high fidelity audio frequency amplifier output stage	SAVANTIC	SAVANTIC
2SA1986	Silicon PNP Power Transistors DESCRIPTION ·With TO-3P(I) package ·Complement to type 2SC5358 APPLICATIONS ·Power amplifier applications ·Recommend for 80W high fidelity audio frequency amplifier output stage	ISC 无锡固电	ISC
2SA1986	Silicon PNP Power Transistor DESCRIPTION • High Current Capability • High Power Dissipation • High Collector-Emitter Breakdown Voltage- : V(BR)CEO= -230V(Min) • Complement to Type 2SC5358 APPLICATIONS • Power amplifier applications • Recommend for SOW high fidelity audio frequency amplifier output	NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司	NJSEMI
2SA1986	Bipolar Small-Signal Transistors MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf	TOSHIBA 东芝	TOSHIBA
2SA1987	Bipolar Small-Signal Transistors MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf	TOSHIBA 东芝	TOSHIBA
2SA1987	Silicon PNP Power Transistor DESCRIPTION • High Current Capability • High Power Dissipation • High Collector-Emitter Breakdown Voltage- : V(BR)CEO= -230V(Min) • Complement to Type 2SC5359 APPLICATIONS • Power amplifier applications • Recommend for 100W high fidelity audio frequency amplifier output stage applications	NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司	NJSEMI
2SA1987	TRANSISTOR (POWER AMPLIFIER APPLICATIONS) Power Amplifier Applications • High breakdown voltage: VCEO= −230 V (min) • Complementary to 2SC5359 • Recommended for 100-W high-fidelity audio frequency amplifier output stage.	TOSHIBA 东芝	TOSHIBA
2SA1987	Silicon PNP Power Transistors DESCRIPTION • With TO-3PL package • Complement to type 2SC5359 • High collector voltage APPLICATIONS • Power amplifier applications • Recommended for 100W high fidelity audio frequency amplifier output stage	ISC 无锡固电	ISC
2SA1987	Silicon PNP Power Transistors DESCRIPTION • With TO-3PL package • Complement to type 2SC5359 • High collector voltage APPLICATIONS • Power amplifier applications • Recommended for 100W high fidelity audio frequency amplifier output stage	SAVANTIC	SAVANTIC
2SA1987	Silicon PNP Power Transistors DESCRIPTION • With TO-3PL package • Complement to type 2SC5359 • High collector voltage APPLICATIONS • Power amplifier applications • Recommended for 100W high fidelity audio frequency amplifier output stage	JMNIC 锦美电子	JMNIC
2SA1988	Silicon PNP Power Transistors DESCRIPTION • With TO-3PN package • High collector-emitter voltage APPLICATIONS • For audio frequency power amplifier and industrial use	JMNIC 锦美电子	JMNIC
2SA1988	Silicon PNP Power Transistors DESCRIPTION • With TO-3PN package • High collector-emitter voltage APPLICATIONS • For audio frequency power amplifier and industrial use	ISC 无锡固电	ISC
2SA1988	PNP SILICON TRANSISTOR POWER AMPLIFIER INDUSTRIAL USE DESCRIPTION The 2SA1988 is PNP Silicon Power Transistor that designed for audio frequency power amplifier. FEATURES • High Voltage VCEO= −200 V • DC Current Gain hFE= 70 to 200 • TO-3P Package	NEC 瑞萨	NEC
2SA1988	Silicon PNP Power Transistors DESCRIPTION • With TO-3PN package • High collector-emitter voltage APPLICATIONS • For audio frequency power amplifier and industrial use	SAVANTIC	SAVANTIC
2SA1988	Silicon Transistor PNP SILICON TRANSISTOR POWER AMPLIFIER DESCRIPTION The 2SA1988 is PNP Silicon Power Transistor that designed for audio frequency power amplifier. FEATURES • High Voltage VCEO = –200 V • DC Current Gain hFE = 70 to 200 • TO-3P Package	RENESAS 瑞萨	RENESAS
2SA1980	Small Signal Transistor	SECOS 喜可士	SECOS
2SA1980	Small Signal Transistors	AUK	AUK
2SA1980	双极型晶体管	LUGUANG 鲁光电子	LUGUANG

2SA198产品属性

类型
描述
PCM(W)：
0.625
IC(A)：
0.15
VCBO(V)：
50
VCEO(V)：
50
VEBO(V)：
5
hFEMin：
70
hFEMax：
700
hFE@VCE(V)：
6
hFE@IC(A)：
0.002
VCE(sat)(V)：
0.3
VCE(sat)\u001E@IC(A)：
0.1
VCE(sat)\u001E@IB(A)：
0.01
Package：
TO-92

2SA198供应商更多...

更新时间：2026-5-14 22:50:00

IC供应商	芯片型号	品牌	批号	封装	库存	备注	价格
上海意淼电子科技有限公司	2SA1986-R	TOS	23+	NA	3580	全新原装假一赔十	询价
深圳市纳艾斯科技有限公司	2SA1986-R/2SC5358-R	TOS	24+	TO247	80000	只做自己库存全新原装进口正品假一赔百可开13%增	询价
深圳市联世界科技有限公司	2SA1986-R(Q)	TOSHIBA	24+/25+		4330	原装正品现货库存价优	询价
深圳市科恒伟业电子有限公司	2SA1986	TOSHIBA/东芝	2540+	TO-3P(N)	8595	只做原装正品假一赔十为客户做到零风险!!	询价
深圳市富利微电子科技有限公司	2SA1987	TOSHIBA/东芝	25+	NA	30000	房间原装现货特价热卖,有单详谈	询价
深圳市振宏微科技有限公司	2SA1986	TOS	23+	TO-3P	3000	专做原装正品,假一罚百!	询价
深圳市正纳电子有限公司	2SA1987	TOSHIBA(东芝)	23+	NA	20094	正纳10年以上分销经验原装进口正品做服务做口碑有支持	询价
深圳市芯皇电子有限公司	2SA1986-R/2SC5358-R	TOSHIBA/东芝	23+	TO247	6000	专业配单保证原装正品假一罚十	询价
深圳市英科美电子有限公司	2SA1987	TOSHIBA/东芝	2223+	TO-3PL	26800	只做原装正品假一赔十为客户做到零风险	询价
深圳市一线半导体有限公司	2SA1986	TOSHIBA	24+		60000		询价

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DdatasheetPDF页码索引

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找IC，尽在114IC

2SA198晶体管资料

2SA198产品属性

2SA198供应商更多...

2SA198芯片相关品牌

2SA198规格书下载地址

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2SA198数据表相关新闻

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2SA1037AKT146Q

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2SA2198

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