封装/外壳：TO-236-3，SC-59，SOT-23-3 包装：托盘 描述：RF TRANS PNP 12V 5.5GHZ SOT23 分立半导体产品 晶体管 - 双极（BJT）- 射频

PNP EPITAXIAL SILICON TRANSISTOR

FEATURES • High fT fT = 5.5 GHz TYP. • | S21e | 2 = 10.0 dB TYP. @f = 1.0 GHz, VCE = −10 V, IC = −15 mA • High speed switching characteristics • Equivalent NPN transistor is the NE02133 / 2SC2351. • Alternative of the 2SA1424.

PNP EPITAXIAL SILICON TRANSISTOR MICROWAVE AMPLIFIER

FEATURES • High fT fT = 5.5 GHz TYP. • | S21e | 2 = 10.0 dB TYP. @f = 1.0 GHz, VCE = −10 V, IC = −15 mA • High speed switching characteristics • Equivalent NPN transistor is the 2SC2351. • Alternative of the 2SA1424.

PNP Eitaxial Silicon Transistor

Features ● High fT (fT=5.5GHz TYP). ● High gain |S21e|2 =10.0dB TYP.@f=1.0GHz,Vce=-10V,Ic=-15mA ● High-speed switching characterstics

PNP EPITAXIAL SILICON TRANSISTOR MICROWAVE AMPLIFIER

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