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位置：首页 > IC中文资料第1342页 > 2SA196

2SA196晶体管资料

  • 2SA196别名：2SA196三极管、2SA196晶体管、2SA196晶体三极管

  • 2SA196生产厂家：日本冲电气工业股份公司

  • 2SA196制作材料：Ge-PNP

  • 2SA196性质：调幅 （AM）_中频放大 （ZF）

  • 2SA196封装形式：直插封装

  • 2SA196极限工作电压：15V

  • 2SA196最大电流允许值：0.015A

  • 2SA196最大工作频率：2.5MHZ

  • 2SA196引脚数：3

  • 2SA196最大耗散功率：

  • 2SA196放大倍数：

  • 2SA196图片代号：C-47

  • 2SA196vtest：15

  • 2SA196htest：2500000

  • 2SA196atest：0.015

  • 2SA196wtest：0

  • 2SA196代换 2SA196用什么型号代替：AF124,AF125,AF126,AF127,AF200,2N3323,2N3324,2N3325,2SA203,3AG54B,

2SA196价格

参考价格：￥10.4376

型号：2SA1962-O(Q) 品牌：Toshiba 备注：这里有2SA196多少钱，2025年最近7天走势，今日出价，今日竞价，2SA196批发/采购报价，2SA196行情走势销售排行榜，2SA196报价。
型号 功能描述 生产厂家&企业 LOGO 操作
2SA1960

SiliconNPNEpitaxial

Features •Highvoltagelargecurrentoperation. VCEO=–80V,IC=–300mA •HighfT. fT=1.3GHz •Smalloutputcapacitance. Cob=2.9pF Application •WidebandvideooutputamplifierforcolorCRTmonitor. •Highfrequencyhighvoltageamplifier. •Highspeedpowerswitchin

HitachiHitachi Semiconductor

日立日立公司

Hitachi
2SA1961

SiliconPNPepitaxialplanertype

SiliconPNPepitaxialplanertype Forgeneralamplification Complementaryto2SC5419 ■Features ●HighcollectortoemittervoltageVCEO.

PanasonicPanasonic Semiconductor

松下松下电器

Panasonic
2SA1962

TRANSISTOR(POWERAMPLIFIERAPPLICATIONS)

PowerAmplifierApplications •Highbreakdownvoltage:VCEO=−230V(min) •Complementaryto2SC5242 •Recommendedfor80-Whigh-fidelityaudiofrequencyamplifier outputstage.

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA
2SA1962

iscSiliconPNPPowerTransistor

DESCRIPTION •Collector-EmitterBreakdownVoltage- :V(BR)CEO=-230V(Min) •GoodLinearityofhFE •ComplementtoType2SC5242 APPLICATIONS •Poweramplifierapplications •Recommendfor80Whighfidelityaudiofrequency amplifieroutputstageapplications

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC
2SA1962

SiliconPNPPowerTransistors

DESCRIPTION •WithTO-3P(I)package •Complementtotype2SC5242 •Highcollectorvoltage:VCEO=-230V(Min) APPLICATIONS •Poweramplifierapplications •Recommendfor80Whighfidelityaudio frequencyamplifieroutputstage

SAVANTIC

Savantic, Inc.

SAVANTIC
2SA1962

SiliconPNPPowerTransistors

DESCRIPTION •WithTO-3P(I)package •Complementtotype2SC5242 •Highcollectorvoltage:VCEO=-230V(Min) APPLICATIONS •Poweramplifierapplications •Recommendfor80Whighfidelityaudio frequencyamplifieroutputstage

JMNICQuanzhou Jinmei Electronic Co.,Ltd.

锦美电子泉州锦美电子有限公司

JMNIC
2SA1962

PNPEpitaxialSiliconTransistor

Features •HighCurrentCapability:IC=-17A •HighPowerDissipation:130watts •HighFrequency:30MHz. •HighVoltage:VCEO=-250V •WideS.O.Aforreliableoperation. •ExcellentGainLinearityforlowTHD. •Complementto2SC5242/FJA4313. •ThermalandelectricalSpicemodelsarea

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild
2SA1962

PNPEpitaxialSiliconTransistor

Features •HighCurrentCapability:IC=-17A •HighPowerDissipation:130watts •HighFrequency:30MHz. •HighVoltage:VCEO=-250V •WideS.O.Aforreliableoperation. •ExcellentGainLinearityforlowTHD. •Complementto2SC5242/FJA4313. •ThermalandelectricalSpicemodelsare

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI
2SA1962

PowerAmplifierApplications

PowerAmplifierApplications •Highbreakdownvoltage:VCEO=−230V(min) •Complementaryto2SC5242 •Recommendedfor80-Whigh-fidelityaudiofrequencyamplifier outputstage.

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA
2SA1962

SiliconPNPPowerTransistor

DESCRIPTION •Collector-EmitterBreakdownVoltage- :V(BR)CEO=-230V(Min) •GoodLinearityofhFE •ComplementtoType2SC5242 APPLICATIONS •Poweramplifierapplications •Recommendfor80Whighfidelityaudiofrequency amplifieroutputstageapplications

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

NJSEMI
2SA1962

BipolarSmall-SignalTransistors

MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA
2SA1962-O

PowerAmplifierApplications

PowerAmplifierApplications •Highbreakdownvoltage:VCEO=−230V(min) •Complementaryto2SC5242 •Recommendedfor80-Whigh-fidelityaudiofrequencyamplifier outputstage.

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA
2SA1962OTU

PNPEpitaxialSiliconTransistor

Features •HighCurrentCapability:IC=-17A •HighPowerDissipation:130watts •HighFrequency:30MHz. •HighVoltage:VCEO=-250V •WideS.O.Aforreliableoperation. •ExcellentGainLinearityforlowTHD. •Complementto2SC5242/FJA4313. •ThermalandelectricalSpicemodelsare

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI
2SA1962OTU

PNPEpitaxialSiliconTransistor

Features •HighCurrentCapability:IC=-17A •HighPowerDissipation:130watts •HighFrequency:30MHz. •HighVoltage:VCEO=-250V •WideS.O.Aforreliableoperation. •ExcellentGainLinearityforlowTHD. •Complementto2SC5242/FJA4313. •ThermalandelectricalSpicemodelsarea

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild
2SA1962RTU

PNPEpitaxialSiliconTransistor

Features •HighCurrentCapability:IC=-17A •HighPowerDissipation:130watts •HighFrequency:30MHz. •HighVoltage:VCEO=-250V •WideS.O.Aforreliableoperation. •ExcellentGainLinearityforlowTHD. •Complementto2SC5242/FJA4313. •ThermalandelectricalSpicemodelsarea

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild
2SA1962RTU

PNPEpitaxialSiliconTransistor

Features •HighCurrentCapability:IC=-17A •HighPowerDissipation:130watts •HighFrequency:30MHz. •HighVoltage:VCEO=-250V •WideS.O.Aforreliableoperation. •ExcellentGainLinearityforlowTHD. •Complementto2SC5242/FJA4313. •ThermalandelectricalSpicemodelsare

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI
2SA1963

High-FrequencyLow-NoiseAmp,Ultrahigh-SpeedSwitchingApplications

High-FrequecyLow-NoiseAmplifier,Ultrahigh-SpeedSwitchingApplications Features ·Lownoise:NF=1.5dBtyp(f=1GHz). ·Highgain:|S2le|2=9dBtyp(f=1GHz). ·Highcutofffrequency:fT=5GHztyp.

SANYOSanyo Semicon Device

三洋三洋电机株式会社

SANYO
2SA1964

Foraudioamplifieroutputstages/TVvelocitymodulation(-160V,-1.5A)

Features 1)FlatDCcurrentgaincharacteristics. 2)Highbreakdownvoltage. 3)Highft.(Typ.150MHz) 4)WideSOA(safeoperatingarea) 5)Complementsthe2SC5248.

ROHMRohm

罗姆罗姆半导体集团

ROHM
2SA1964

SiliconPNPPowerTransistor

DESCRIPTION •Collector-EmitterBreakdownVoltage- :V(BR)CEo=-160V(Min) •GoodLinearityofhFE •WideAreaofSafeOperation •ComplementtoType2SC5248 APPLICATIONS •Poweramplifierapplications. •Driverstageamplifierapplications.

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

NJSEMI
2SA1964

SiliconPNPtransistorinaTO-220FPlasticPackage.

Descriptions SiliconPNPtransistorinaTO-220FPlasticPackage. Features FlatDCcurrentgaincharacteristics,highbreakdownvoltage, highfT,wideSOA,complementsthe2SC5248. Applications High-voltageswitching (audiooutputamplifiertransistor,stabilizedpowersupplytr

FOSHANFoshan Blue Rocket Electronics Co.,Ltd.

蓝箭电子佛山市蓝箭电子股份有限公司

FOSHAN
2SA1964

ComplementtoType2SC5248

DESCRIPTION •Collector-EmitterBreakdownVoltage- :V(BR)CEo=-160V(Min) •GoodLinearityofhFE •WideAreaofSafeOperation •ComplementtoType2SC5248 APPLICATIONS •Poweramplifierapplications. •Driverstageamplifierapplications.

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC
2SA1965

TRANSISTOR(POWER,DRIVERSTAGEAMPLIFIERAPPLICATIONS)

POWERAMPLIFIERAPPLICATIONS. ​​​​​​​DRIVERSTAGEAMPLIFIERAPPLICATIONS. •Complementaryto2SC2235.

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA
2SA1965

MutingCircuitApplications??????

PNPEpitaxialPlanarSiliconTransistorMutingCircuitApplications Features •Ultrasmall-sizedpackagepermittingappliedsetstobemadesmallandslim. •Smalloutputcapacitance. •Lowcollector-to-emittersaturationvoltage. •LowONresistance.

SANYOSanyo Semicon Device

三洋三洋电机株式会社

SANYO
2SA1965-S

MutingCircuitApplications

PNPEpitaxialPlanarSiliconTransistorMutingCircuitApplications Features •Ultrasmall-sizedpackagepermittingappliedsetstobemadesmallandslim. •Smalloutputcapacitance. •Lowcollector-to-emittersaturationvoltage. •LowONresistance.

SANYOSanyo Semicon Device

三洋三洋电机株式会社

SANYO
2SA1967

High-VoltageAmp,High-VoltageSwitchingApplications

High-VoltageAmplifier,High-VoltageSwitchingApplications Features •Highbreakdownvoltage(VCEOmin=–900V). •SmallCob(Cobtyp=2.2pF). •Highreliability(AdoptionofHVPprocess).

SANYOSanyo Semicon Device

三洋三洋电机株式会社

SANYO
2SA1968

High-VoltageAmp,High-VoltageSwitchingApplications

Features •Highbreakdownvoltage(VCEOmin=–900V). •SmallCob(Cobtyp=2.2pF). •Highreliability(AdoptionofHVPprocess). •Packageoffullisolationtype.

SANYOSanyo Semicon Device

三洋三洋电机株式会社

SANYO
2SA1968LS

High-VoltageAmplifier,High-VoltageSwitchingApplications

High-VoltageAmplifier,High-VoltageSwitchingApplications Features •Highbreakdownvoltage(VCEOmin=--900V). •SmallCob(Cobtyp=2.2pF). •Highreliability(AdoptionofHVPprocess). •Packageoffullisolationtype.

SANYOSanyo Semicon Device

三洋三洋电机株式会社

SANYO
2SA1969

High-FrequencyMedium-OutputAmplifier,Medium-CurrentUltrahigh-SpeedSwitchingApplications

Features •HighfT(fT=1.7GHztyp). •Largecurrentcapacity(IC=–400mA).

SANYOSanyo Semicon Device

三洋三洋电机株式会社

SANYO
2SA1962

PowerAmplifierApplications

文件：129.669 Kbytes Page：4 Pages

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA
2SA1962

SiliconPNPPowerTransistors

文件：237.28 Kbytes Page：4 Pages

JMNICQuanzhou Jinmei Electronic Co.,Ltd.

锦美电子泉州锦美电子有限公司

JMNIC
2SA1962_07

PowerAmplifierApplications

文件：129.669 Kbytes Page：4 Pages

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA
2SA1962_15

SiliconPNPPowerTransistors

文件：237.28 Kbytes Page：4 Pages

JMNICQuanzhou Jinmei Electronic Co.,Ltd.

锦美电子泉州锦美电子有限公司

JMNIC
2SA1962OTU

封装/外壳：TO-3P-3，SC-65-3 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS PNP 250V 17A TO3P 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI
2SA1962RTU

封装/外壳：TO-3P-3，SC-65-3 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS PNP 250V 17A TO3P 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

2SA196产品属性

  • 类型

    描述

  • 型号

    2SA196

  • 制造商

    Panasonic Industrial Company

  • 功能描述

    TRANSISTOR

2SA196供应商更多...

更新时间：2025-5-17 23:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
深圳市高捷芯城科技有限公司
2SA1962RTU
onsemi(安森美)
24+
TO-3P
1224
原厂订货渠道,支持BOM配单一站式服务
询价
深圳市得捷芯城科技有限公司
2SA1962
TOSHIBA(东芝)
24+
NA/
8735
原厂直销,现货供应,账期支持!
询价
深圳市航润创能电子集团有限公司
2SA1962
TOSHIBA
21+
TO-3P
100
原装现货假一赔十
询价
深圳兆威电子有限公司
2SA1962
TOS
23+
TO3P
600
散新房间现货
询价
深圳市明嘉莱科技有限公司
2SA1962
TOSHIBA/东芝
25+
TO-3P
880000
明嘉莱只做原装正品现货
询价
深圳市华斯顿科技有限公司
2SA1962
TOSHIBA
25+23+
TO-3P
33745
绝对原装正品全新进口深圳现货
询价
深圳市科恒伟业电子有限公司
2SA1962
TOSHIBA/东芝
2048+
TO-3P
9851
只做原装正品现货!或订货假一赔十!
询价
贸泽芯城（深圳）电子科技有限公司
2SA1962,A1962,2SA1962-O
TOSHIBA/东芝
23+
TO-3P
5000
原厂授权代理,海外优势订货渠道。可提供大量库存,详
询价
深圳市坤融电子科技有限公司
2SA1962RTU
FAIRCHILD/仙童
24+
TO-3P
8950
BOM配单专家,发货快,价格低
询价
深圳市一线半导体有限公司
2SA1962
FAIRCHILD
24+
TO-3P
8866
询价

2SA196芯片相关品牌

  • DATADELAY
  • Fujitsu
  • Hittite
  • JHE
  • Lattice
  • Microsemi
  • MOLEX10
  • NUMONYX
  • SHARMA
  • TI1
  • Vitec
  • ZSELEC

2SA196规格书下载地址

2SA196参数引脚图相关

2SA196数据表相关新闻

DdatasheetPDF页码索引

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