Silicon NPN Epitaxial

Features • High voltage large current operation. VCEO = –80 V, IC = –300 mA • High fT. fT = 1.3 GHz • Small output capacitance. Cob = 2.9 pF Application • Wide band video output amplifier for color CRT monitor. • High frequency high voltage amplifier. • High speed power switchin

Silicon PNP epitaxial planer type

Silicon PNP epitaxial planer type For general amplification Complementary to 2SC5419 ■Features ● High collector to emitter voltage VCEO.

PNP Epitaxial Silicon Transistor

Features • High Current Capability: I C = -17A • High Power Dissipation : 130watts • High Frequency : 30MHz. • High Voltage : VCEO= -250V • Wide S.O.A for reliable operation. • Excellent Gain Linearity for low THD. • Complement to 2SC5242/FJA4313. • Thermal and electrical Spice models are

PNP Epitaxial Silicon Transistor

Features • High Current Capability: IC = -17A • High Power Dissipation : 130watts • High Frequency : 30MHz. • High Voltage : VCEO= -250V • Wide S.O.A for reliable operation. • Excellent Gain Linearity for low THD. • Complement to 2SC5242/FJA4313. • Thermal and electrical Spice models are a

TRANSISTOR (POWER AMPLIFIER APPLICATIONS)

Power Amplifier Applications • High breakdown voltage: VCEO = −230 V (min) • Complementary to 2SC5242 • Recommended for 80-W high-fidelity audio frequency amplifier output stage.

Power Amplifier Applications

Power Amplifier Applications • High breakdown voltage: VCEO = −230 V (min) • Complementary to 2SC5242 • Recommended for 80-W high-fidelity audio frequency amplifier output stage.

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

isc Silicon PNP Power Transistor

DESCRIPTION • Collector-Emitter Breakdown Voltage- : V(BR)CEO= -230V(Min) • Good Linearity of hFE • Complement to Type 2SC5242 APPLICATIONS • Power amplifier applications • Recommend for 80W high fidelity audio frequency amplifier output stage applications

Silicon PNP Power Transistors

DESCRIPTION • With TO-3P(I) package • Complement to type 2SC5242 • High collector voltage: VCEO=-230V(Min) APPLICATIONS • Power amplifier applications • Recommend for 80W high fidelity audio frequency amplifier output stage

Silicon PNP Power Transistor

DESCRIPTION • Collector-Emitter Breakdown Voltage- : V(BR)CEO= -230V(Min) • Good Linearity of hFE • Complement to Type 2SC5242 APPLICATIONS • Power amplifier applications • Recommend for 80W high fidelity audio frequency amplifier output stage applications

Silicon PNP Power Transistors

DESCRIPTION • With TO-3P(I) package • Complement to type 2SC5242 • High collector voltage: VCEO=-230V(Min) APPLICATIONS • Power amplifier applications • Recommend for 80W high fidelity audio frequency amplifier output stage

Power Amplifier Applications

Power Amplifier Applications • High breakdown voltage: VCEO = −230 V (min) • Complementary to 2SC5242 • Recommended for 80-W high-fidelity audio frequency amplifier output stage.

PNP Epitaxial Silicon Transistor

Features • High Current Capability: IC = -17A • High Power Dissipation : 130watts • High Frequency : 30MHz. • High Voltage : VCEO= -250V • Wide S.O.A for reliable operation. • Excellent Gain Linearity for low THD. • Complement to 2SC5242/FJA4313. • Thermal and electrical Spice models are a

PNP Epitaxial Silicon Transistor

Features • High Current Capability: I C = -17A • High Power Dissipation : 130watts • High Frequency : 30MHz. • High Voltage : VCEO= -250V • Wide S.O.A for reliable operation. • Excellent Gain Linearity for low THD. • Complement to 2SC5242/FJA4313. • Thermal and electrical Spice models are

PNP Epitaxial Silicon Transistor

Features • High Current Capability: IC = -17A • High Power Dissipation : 130watts • High Frequency : 30MHz. • High Voltage : VCEO= -250V • Wide S.O.A for reliable operation. • Excellent Gain Linearity for low THD. • Complement to 2SC5242/FJA4313. • Thermal and electrical Spice models are a

PNP Epitaxial Silicon Transistor

Features • High Current Capability: I C = -17A • High Power Dissipation : 130watts • High Frequency : 30MHz. • High Voltage : VCEO= -250V • Wide S.O.A for reliable operation. • Excellent Gain Linearity for low THD. • Complement to 2SC5242/FJA4313. • Thermal and electrical Spice models are

High-Frequency Low-Noise Amp, Ultrahigh-Speed Switching Applications

High-Frequecy Low-Noise Amplifier,Ultrahigh-Speed Switching Applications Features · Low noise : NF=1.5dB typ (f=1GHz). · High gain : | S2le |2=9dB typ (f=1GHz). · High cutoff frequency : fT=5GHz typ.

Silicon PNP transistor in a TO-220F Plastic Package.

Descriptions Silicon PNP transistor in a TO-220F Plastic Package. Features Flat DC current gain characteristics, high breakdown voltage, high fT, wide SOA, complements the 2SC5248. Applications High-voltage switching (audio output amplifier transistor, stabilized power supply tr

Silicon PNP Power Transistor

DESCRIPTION • Collector-Emitter Breakdown Voltage- :V(BR)CEo=-160V(Min) • Good Linearity of hFE • Wide Area of Safe Operation • Complement to Type 2SC5248 APPLICATIONS • Power amplifier applications. • Driver stage amplifier applications.

Complement to Type 2SC5248

DESCRIPTION • Collector-Emitter Breakdown Voltage- :V(BR)CEo=-160V(Min) • Good Linearity of hFE • Wide Area of Safe Operation • Complement to Type 2SC5248 APPLICATIONS • Power amplifier applications. • Driver stage amplifier applications.

For audio amplifier output stages/TV velocity modulation (-160V, -1.5A)

Features 1) Flat DC current gain characteristics. 2) High breakdown voltage. 3) High ft. (Typ. 150MHz) 4) Wide SOA(safe operating area) 5) Complements the 2SC5248.

Muting Circuit Applications??????

PNP Epitaxial Planar Silicon Transistor Muting Circuit Applications Features • Ultrasmall-sized package permitting applied sets to be made small and slim. • Small output capacitance. • Low collector-to-emitter saturation voltage. • Low ON resistance.

TRANSISTOR (POWER, DRIVER STAGE AMPLIFIER APPLICATIONS)

POWER AMPLIFIER APPLICATIONS. ​​​​​​​DRIVER STAGE AMPLIFIER APPLICATIONS. • Complementary to 2SC2235.

Muting Circuit Applications

PNP Epitaxial Planar Silicon Transistor Muting Circuit Applications Features • Ultrasmall-sized package permitting applied sets to be made small and slim. • Small output capacitance. • Low collector-to-emitter saturation voltage. • Low ON resistance.

High-Voltage Amp, High-Voltage Switching Applications

High-Voltage Amplifier, High-Voltage Switching Applications Features • High breakdown voltage (VCEO min=–900V). • Small Cob (Cob typ=2.2pF). • High reliability (Adoption of HVP process).

High-Voltage Amp, High-Voltage Switching Applications

Features • High breakdown voltage (VCEO min=–900V). • Small Cob (Cob typ=2.2pF). • High reliability (Adoption of HVP process). • Package of full isolation type.

High-Voltage Amplifier, High-Voltage Switching Applications

High-Voltage Amplifier, High-Voltage Switching Applications Features • High breakdown voltage(VCEO min=--900V). • Small Cob(Cob typ=2.2pF). • High reliability(Adoption of HVP process). • Package of full isolation type.

High-Frequency Medium-Output Amplifier, Medium-Current Ultrahigh-Speed Switching Applications

Features • High fT (fT=1.7GHz typ). • Large current capacity (IC=–400mA).

Silicon PNP epitaxial planer type

Silicon PNP epitaxial planer type

PNP外延硅晶体管

Silicon PNP Power Transistors

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Power Amplifier Applications

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Power Amplifier Applications

文件：129.669 Kbytes Page：4 Pages

Silicon PNP Power Transistors

文件：237.28 Kbytes Page：4 Pages

封装/外壳：TO-3P-3，SC-65-3 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS PNP 250V 17A TO3P 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

封装/外壳：TO-3P-3，SC-65-3 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS PNP 250V 17A TO3P 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个