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2SA194晶体管资料

2SA194别名：2SA194三极管、2SA194晶体管、2SA194晶体三极管
2SA194生产厂家：日本冲电气工业股份公司
2SA194制作材料：Ge-PNP
2SA194性质：调幅（AM）_中频放大（ZF）
2SA194封装形式：直插封装
2SA194极限工作电压：15V
2SA194最大电流允许值：0.015A
2SA194最大工作频率：7MHZ
2SA194引脚数：3
2SA194最大耗散功率：
2SA194放大倍数：
2SA194图片代号：C-47
2SA194vtest：15
2SA194htest：7000000
2SA194atest：0.015
2SA194wtest：0

2SA194代换 2SA194用什么型号代替：AF124,AF125,AF126,AF127,AF200,2N3323,2N3324,2N3325,2SA202,3AG54B,

2SA194价格

参考价格：￥6.3451

型号：2SA1943N(S1,E,S) 品牌：Toshiba 备注：这里有2SA194多少钱，2025年最近7天走势，今日出价，今日竞价，2SA194批发/采购报价，2SA194行情走势销售排行榜，2SA194报价。

型号	功能描述	生产厂家企业	LOGO
2SA1940	Silicon PNP Power Transistors DESCRIPTION ·With TO-3P(I) package ·Complement to type 2SC5197 APPLICATIONS ·Power amplifier applications ·Recommend for 55W high fidelity audio requency amplifier output stage	SAVANTIC	SAVANTIC
2SA1940	Silicon PNP Power Transistors DESCRIPTION ·With TO-3P(I) package ·Complement to type 2SC5197 APPLICATIONS ·Power amplifier applications ·Recommend for 55W high fidelity audio frequency amplifier output stage	JMNIC 锦美电子	JMNIC
2SA1940	TRANSISTOR (POWER AMPLIFIER APPLICATIONS) Power Amplifier Applications • Complementary to 2SC5197 • Recommended for 55-W high-fidelity audio frequency amplifier output stage	TOSHIBA 东芝	TOSHIBA
2SA1940	isc Silicon PNP Power Transistor DESCRIPTION ·Low Collector Saturation Voltage-: VCE(sat)= -2.0V(Min) @IC= -6A ·Good Linearity of hFE ·Complement to Type 2SC5197 APPLICATIONS ·Power amplifier applications ·Recommend for 55W high fidelity audio frequency amplifier output stage applications	ISC 无锡固电	ISC
2SA1940	Silicon PNP Power Transistor DESCRIPTION • Low Collector Saturation Voltage- : VCE(sat)= -2.0V(Min) @lc= -6A • Good Linearity of hFE • Complement to Type 2SC5197 APPLICATIONS • Power amplifier applications • Recommend for 55W high fidelity audio frequency amplifier output stage applications	NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司	NJSEMI
2SA1940	Bipolar Small-Signal Transistors MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf	TOSHIBA 东芝	TOSHIBA
2SA1941	Bipolar Small-Signal Transistors MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf	TOSHIBA 东芝	TOSHIBA
2SA1941	Power Amplifier Applications FEATURES ● High collector voltage˖ VCEO=140V (min) ● Complementary to 2SC5198 ● Recommended for 70-W high-fidelity audio frequency amplifier output ● RoHS product APPLICATIONS ● Power Amplifier Applications	JSMCJILIN SINO-MICROELECTRONICS CO., LTD. 华微电子吉林华微电子股份有限公司	JSMC
2SA1941	Power Amplifier Applications • High breakdown voltage: VCEO = −140 V (min) • Complementary to 2SC5198 • Recommended for 70-W high-fidelity audio frequency amplifier output stage.	SYC	SYC
2SA1941	Power Amplifier Applications Power Amplifier Applications • High breakdown voltage: VCEO = −140 V (min) • Complementary to 2SC5198 • Recommended for 70-W high-fidelity audio frequency amplifier output stage.	TOSHIBA 东芝	TOSHIBA
2SA1941	Power Amplifier Applications Power Amplifier Applications • High breakdown voltage: VCEO = −140 V (min) • Complementary to 2SC5198 • Recommended for 70-W high-fidelity audio frequency amplifier output stage.	TOSHIBA 东芝	TOSHIBA
2SA1941	Silicon PNP Power Transistor DESCRIPTION • Low Collector Saturation Voltage- : VCE(sat)=- 2.0V(Min) @lc=- 7A • Good Linearity of hFE • Complement to Type 2SC5198 APPLICATIONS • Power amplifier applications • Recommend for 70W high fidelity audio frequency amplifier output stage applications	NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司	NJSEMI
2SA1941	isc Silicon PNP Power Transistor DESCRIPTION ·Low Collector Saturation Voltage- : VCE(sat)=- 2.0V(Min) @IC=- 7A ·Good Linearity of hFE ·Complement to Type 2SC5198 APPLICATIONS ·Power amplifier applications ·Recommend for 70W high fidelity audio frequency amplifier output stage applications	ISC 无锡固电	ISC
2SA1941	Power Amplifier Applications4 Power Amplifier Applications • High breakdown voltage: VCEO = −140 V (min) • Complementary to 2SC5198 • Recommended for 70-W high-fidelity audio frequency amplifier output stage.	TOSHIBA 东芝	TOSHIBA
2SA1941	Silicon PNP transistor in a TO-3P Plastic Package. Descriptions Silicon PNP transistor in a TO-3P Plastic Package. Features Recommend for 70W high fidelity audio frequency amplifier output stage, Complementary to 2SC5198. Applications Power amplifier applications.	FOSHAN 蓝箭电子	FOSHAN
2SA1941	Silicon PNP Power Transistors DESCRIPTION ·With TO-3P(I) package ·Complement to type 2SC5198 APPLICATIONS ·Power amplifier applications ·Recommend for 70W high fidelity audio frequency amplifier output stage	SAVANTIC	SAVANTIC
2SA1941	Silicon PNP Power Transistors DESCRIPTION ·With TO-3P(I) package ·Complement to type 2SC5198 APPLICATIONS ·Power amplifier applications ·Recommend for 70W high fidelity audio frequency amplifier output stage	JMNIC 锦美电子	JMNIC
2SA1941	TRANSISTOR (POWER AMPLIFIER APPLICATIONS) Power Amplifier Applications • High breakdown voltage: VCEO = −140 V (min) • Complementary to 2SC5198 • Recommended for 70-W high-fidelity audio frequency amplifier output stage.	TOSHIBA 东芝	TOSHIBA
2SA1941B	Silicon PNP triple diffusion planar transistor Silicon PNP triple diffusion planar transistor -10A/-140V/100W FEATURES High breakdown voltage, VCEO = -140V (min) Complementary to 2SC5198B TO- 3Ppackage which can be installed to the heat sink with one screw APPLICATIONS Suitable for use in 70W high fidelity audio ampl	NELLSEMI 尼尔半导体	NELLSEMI
2SA1941-O	Power Amplifier Applications4 Power Amplifier Applications • High breakdown voltage: VCEO = −140 V (min) • Complementary to 2SC5198 • Recommended for 70-W high-fidelity audio frequency amplifier output stage.	TOSHIBA 东芝	TOSHIBA
2SA1941-OQ	Power Amplifier Applications Power Amplifier Applications • High breakdown voltage: VCEO = −140 V (min) • Complementary to 2SC5198 • Recommended for 70-W high-fidelity audio frequency amplifier output stage.	TOSHIBA 东芝	TOSHIBA
2SA1941-O-W-N-B	Power Amplifier Applications FEATURES ● High collector voltage˖ VCEO=140V (min) ● Complementary to 2SC5198 ● Recommended for 70-W high-fidelity audio frequency amplifier output ● RoHS product APPLICATIONS ● Power Amplifier Applications	JSMCJILIN SINO-MICROELECTRONICS CO., LTD. 华微电子吉林华微电子股份有限公司	JSMC
2SA1941-R	Power Amplifier Applications Power Amplifier Applications • High breakdown voltage: VCEO = −140 V (min) • Complementary to 2SC5198 • Recommended for 70-W high-fidelity audio frequency amplifier output stage.	TOSHIBA 东芝	TOSHIBA
2SA1942	Silicon PNP Power Transistor DESCRIPTION • High Collector-Emitter Breakdown Voltage- : V(BR)CEO=-160V(Min) • Complement to Type 2SC5199 APPLICATIONS • Power amplifier applications • Recommend for SOW high fidelity audio frequency amplifier output stage applications	NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司	NJSEMI
2SA1942	Bipolar Small-Signal Transistors MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf	TOSHIBA 东芝	TOSHIBA
2SA1942	Silicon PNP Power Transistors Silicon PNP Power Transistors DESCRIPTION ·With TO-3PL package ·Complement to type 2SC5199 APPLICATIONS ·Power amplifier applications ·Recommended for 80W high fidelity audio frequency amplifier output stage	ISC 无锡固电	ISC
2SA1942	TRANSISTOR (POWER AMPLIFIER APPLICATIONS) Power Amplifier Applications • High breakdown voltage: VCEO= −160 V (min) • Complementary to 2SC5199 • Recommended for 80-W high-fidelity audio frequency amplifier output stage	TOSHIBA 东芝	TOSHIBA
2SA1942	Silicon PNP Power Transistors Silicon PNP Power Transistors DESCRIPTION ·With TO-3PL package ·Complement to type 2SC5199 APPLICATIONS ·Power amplifier applications ·Recommended for 80W high fidelity audio frequency amplifier output stage	JMNIC 锦美电子	JMNIC
2SA1942	Silicon PNP Power Transistors Silicon PNP Power Transistors DESCRIPTION ·With TO-3PL package ·Complement to type 2SC5199 APPLICATIONS ·Power amplifier applications ·Recommended for 80W high fidelity audio frequency amplifier output stage	SAVANTIC	SAVANTIC
2SA1943	isc Silicon PNP Power Transistor DESCRIPTION • High Current Capability • High Power Dissipation • High Collector-Emitter Breakdown Voltage- : V(BR)CEO= -230V(Min) • Complement to Type 2SC5200 APPLICATIONS • Power amplifier applications • Recommend for 100W high fidelity audio frequency amplifier output stage applications	ISC 无锡固电	ISC
2SA1943	Silicon PNP Power Transistors DESCRIPTION • With TO-3PL package • Complement to type 2SC5200 APPLICATIONS • Power amplifier applications • Recommended for 100W high fidelity audio frequency amplifier output stage	JMNIC 锦美电子	JMNIC
2SA1943	POWER AMPLIFIER APPLICATIONS POWER AMPLIFIER APPLICATIONS FEATURES * Complementary to UTC 2SC5200 * Recommended for 100W High Fidelity Audio Frequency Amplifier Output Stage	UTC 友顺	UTC
2SA1943	PNP Epitaxial Silicon Transistor Applications • High-Fidelity Audio Output Amplifier • General Purpose Power Amplifier Features • High Current Capability: IC= -15A. • High Power Dissipation : 150watts. • High Frequency : 30MHz. • High Voltage : VCEO= -230V • Wide S.O.A for reliable operation. • Ex	Fairchild 仙童半导体	Fairchild
2SA1943	TOSHIBA TRANSISTOR SILICON PNP TRIPLE DIFFUSED TYPE DESCRIPTION • High Current Capability • High Power Dissipation • High Collector-Emitter Breakdown Voltage- : V(BR)CEo= -230V(Min) • Complement to Type 2SC5200 APPLICATIONS • Power amplifier applications • Recommend for 100W high fidelity audio frequency amplifier output stage applications	NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司	NJSEMI
2SA1943	TRANSISTOR (POWER AMPLIFIER APPLICATIONS) Power Amplifier Applications • High collector voltage: VCEO= −230 V (min) • Complementary to 2SC5200 • Recommended for 100-W high-fidelity audio frequency amplifier output stage.	TOSHIBA 东芝	TOSHIBA
2SA1943	Silicon PNP Power Transistors DESCRIPTION ·With TO-3PL package ·Complement to type 2SC5200 APPLICATIONS ·Power amplifier applications ·Recommended for 100W high fidelity audio frequency amplifier output stage	SAVANTIC	SAVANTIC
2SA1943	150 Watt Silicon PNP Power Transistors DESCRIPTION • With TO-3PL package • Complement to type 2SC5200 APPLICATIONS • Power amplifier applications • Recommended for 100W high fidelity audio frequency amplifier output stage	THINKISEMI 思祁半导体	THINKISEMI
2SA1943	Silicon PNP transistor in a TO-3P Plastic Package. Descriptions Silicon PNP transistor in a TO-3P Plastic Package. Features Recommend for 100W high fidelity audio frequency amplifier output stage, Complementary to 2SC5200. Applications Power amplifier applications	FOSHAN 蓝箭电子	FOSHAN
2SA1943	Power Amplifier Applications FEATURES ● High collector voltage：VCEO=230V (min) VCEO=250V (min) ● Complementary to 2SC5200 ● Recommended for 100W audio frequency amplifier output ● RoHS product APPLICATIONS ● Power Amplifier Applications	JSMCJILIN SINO-MICROELECTRONICS CO., LTD. 华微电子吉林华微电子股份有限公司	JSMC
2SA1943	TO-3P Plastic-Encapsulate Transistors TRANSISTOR (PNP) FEATURES ● High Collector Current Capability ● High Power Dissipation ● High Frequency ● High Voltage ● Complement to 2SC5200 APPLICATIONS ● High-Fidelity Audio Output Amplifier ● General Purpose Power Amplifier	JIANGSU 长电科技	JIANGSU
2SA1943	Bipolar Small-Signal Transistors MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf	TOSHIBA 东芝	TOSHIBA
2SA1943	isc Silicon PNP Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage -V(BR)CEO=-300V(Min) ·Collector-Emitter Saturation Voltage -VCE(sat)= -3.0V(Max) @IC= -8A APPLICATIONS ·Designed for power amplifier,high speed switching and regulated power supply applications.	ISC 无锡固电	ISC
2SA1943	PNP Epitaxial Silicon Transistor Features • High Current Capability: IC = -17A. • High Power Dissipation : 150watts. • High Frequency : 30MHz. • High Voltage : VCEO= -250V • Wide S.O.A for reliable operation. • Excellent Gain Linearity for low THD. • Complement to 2SC5200/FJL4315. • Full thermal and electrical Spice model	SYC	SYC
2SA1943A-O-AB-N-B	Power Amplifier Applications FEATURES ● High collector voltage：VCEO=230V (min) VCEO=250V (min) ● Complementary to 2SC5200 ● Recommended for 100W audio frequency amplifier output ● RoHS product APPLICATIONS ● Power Amplifier Applications	JSMCJILIN SINO-MICROELECTRONICS CO., LTD. 华微电子吉林华微电子股份有限公司	JSMC
2SA1943A-O-AL-N-B	Power Amplifier Applications FEATURES ● High collector voltage：VCEO=230V (min) VCEO=250V (min) ● Complementary to 2SC5200 ● Recommended for 100W audio frequency amplifier output ● RoHS product APPLICATIONS ● Power Amplifier Applications	JSMCJILIN SINO-MICROELECTRONICS CO., LTD. 华微电子吉林华微电子股份有限公司	JSMC
2SA1943A-O-AL-N-D	Power Amplifier Applications FEATURES ● High collector voltage：VCEO=230V (min) VCEO=250V (min) ● Complementary to 2SC5200 ● Recommended for 100W audio frequency amplifier output ● RoHS product APPLICATIONS ● Power Amplifier Applications	JSMCJILIN SINO-MICROELECTRONICS CO., LTD. 华微电子吉林华微电子股份有限公司	JSMC
2SA1943BL	Silicon PNP triple diffusion planar transistor FEATURES • High breakdown voltage, VCEO = -230V (min) • Complementary to 2SC5200BL • TO-3PL package which can be installed to the heat sink with one screw APPLICATIONS • Suitable for use in 100W high fidelity audio amplifier’s output stage	NELLSEMI 尼尔半导体	NELLSEMI
2SA1943B-O-AB-N-B	Power Amplifier Applications FEATURES ● High collector voltage：VCEO=230V (min) VCEO=250V (min) ● Complementary to 2SC5200 ● Recommended for 100W audio frequency amplifier output ● RoHS product APPLICATIONS ● Power Amplifier Applications	JSMCJILIN SINO-MICROELECTRONICS CO., LTD. 华微电子吉林华微电子股份有限公司	JSMC
2SA1943B-O-AL-N-B	Power Amplifier Applications FEATURES ● High collector voltage：VCEO=230V (min) VCEO=250V (min) ● Complementary to 2SC5200 ● Recommended for 100W audio frequency amplifier output ● RoHS product APPLICATIONS ● Power Amplifier Applications	JSMCJILIN SINO-MICROELECTRONICS CO., LTD. 华微电子吉林华微电子股份有限公司	JSMC
2SA1943B-O-AL-N-D	Power Amplifier Applications FEATURES ● High collector voltage：VCEO=230V (min) VCEO=250V (min) ● Complementary to 2SC5200 ● Recommended for 100W audio frequency amplifier output ● RoHS product APPLICATIONS ● Power Amplifier Applications	JSMCJILIN SINO-MICROELECTRONICS CO., LTD. 华微电子吉林华微电子股份有限公司	JSMC
2SA1943C-O-AB-N-B	Power Amplifier Applications FEATURES ● High collector voltage：VCEO=230V (min) VCEO=250V (min) ● Complementary to 2SC5200 ● Recommended for 100W audio frequency amplifier output ● RoHS product APPLICATIONS ● Power Amplifier Applications	JSMCJILIN SINO-MICROELECTRONICS CO., LTD. 华微电子吉林华微电子股份有限公司	JSMC
2SA1943C-O-AL-N-B	Power Amplifier Applications FEATURES ● High collector voltage：VCEO=230V (min) VCEO=250V (min) ● Complementary to 2SC5200 ● Recommended for 100W audio frequency amplifier output ● RoHS product APPLICATIONS ● Power Amplifier Applications	JSMCJILIN SINO-MICROELECTRONICS CO., LTD. 华微电子吉林华微电子股份有限公司	JSMC
2SA1943C-O-AL-N-D	Power Amplifier Applications FEATURES ● High collector voltage：VCEO=230V (min) VCEO=250V (min) ● Complementary to 2SC5200 ● Recommended for 100W audio frequency amplifier output ● RoHS product APPLICATIONS ● Power Amplifier Applications	JSMCJILIN SINO-MICROELECTRONICS CO., LTD. 华微电子吉林华微电子股份有限公司	JSMC
2SA1943N	150 Watt Silicon Epitaxial Planar PNP Power Transistor DESCRIPTION ·With TO-3PN-SQ package ·Complement to type 2SC5200N APPLICATIONS ·Power amplifier applications ·Recommended for 100W high fidelity audio frequency amplifier output stage	THINKISEMI 思祁半导体	THINKISEMI
2SA1943-O-AB-N-B	Power Amplifier Applications FEATURES ● High collector voltage：VCEO=230V (min) VCEO=250V (min) ● Complementary to 2SC5200 ● Recommended for 100W audio frequency amplifier output ● RoHS product APPLICATIONS ● Power Amplifier Applications	JSMCJILIN SINO-MICROELECTRONICS CO., LTD. 华微电子吉林华微电子股份有限公司	JSMC
2SA1943-O-AL-N-B	Power Amplifier Applications FEATURES ● High collector voltage：VCEO=230V (min) VCEO=250V (min) ● Complementary to 2SC5200 ● Recommended for 100W audio frequency amplifier output ● RoHS product APPLICATIONS ● Power Amplifier Applications	JSMCJILIN SINO-MICROELECTRONICS CO., LTD. 华微电子吉林华微电子股份有限公司	JSMC
2SA1943-O-AL-N-D	Power Amplifier Applications FEATURES ● High collector voltage：VCEO=230V (min) VCEO=250V (min) ● Complementary to 2SC5200 ● Recommended for 100W audio frequency amplifier output ● RoHS product APPLICATIONS ● Power Amplifier Applications	JSMCJILIN SINO-MICROELECTRONICS CO., LTD. 华微电子吉林华微电子股份有限公司	JSMC
2SA1943-OQ	POWER AMPLIFIER APPLICATIONS Power Amplifier Applications • High collector voltage: VCEO= −230 V (min) • Complementary to 2SC5200 • Recommended for 100-W high-fidelity audio frequency amplifier output stage.	TOSHIBA 东芝	TOSHIBA
2SA1943OTU	PNP Epitaxial Silicon Transistor Applications • High-Fidelity Audio Output Amplifier • General Purpose Power Amplifier Features • High Current Capability: IC= -15A. • High Power Dissipation : 150watts. • High Frequency : 30MHz. • High Voltage : VCEO= -230V • Wide S.O.A for reliable operation. • Ex	Fairchild 仙童半导体	Fairchild
2SA1943RTU	PNP Epitaxial Silicon Transistor Applications • High-Fidelity Audio Output Amplifier • General Purpose Power Amplifier Features • High Current Capability: IC= -15A. • High Power Dissipation : 150watts. • High Frequency : 30MHz. • High Voltage : VCEO= -230V • Wide S.O.A for reliable operation. • Ex	Fairchild 仙童半导体	Fairchild

2SA194产品属性

类型
描述
型号
2SA194
制造商
Toshiba America Electronic Components
功能描述
Trans GP BJT PNP 120V 8A 3-Pin(3+Tab) TO-3P(N)

2SA194供应商更多...

更新时间：2025-12-25 8:31:00

IC供应商	芯片型号	品牌	批号	封装	库存	备注	价格
深圳市凌旭科技有限公司	2SA1943	TOSHIBA	2016+	TO-3PL	2980	公司只做原装,假一罚十,可开17%增值税发票!	询价
深圳市粤骏腾电子科技有限公司	2SA1943	TOSHIBA/东芝	24+		10000	原装现货	询价
深圳诚思涵科技有限公司	2SA1943	TOSHIBA	18+	TO-3P	85600	保证进口原装可开17%增值税发票	询价
深圳市弘为电子有限公司	2SA1943	TOS	24+	原厂封装	5500	原装现货假一罚十	询价
中天科工半导体（深圳）有限公司	2SA1942	TOSHIBA/东芝	25+	TO-3PL	45000	TOSHIBA/东芝全新现货2SA1942即刻询购立享优惠#长期有排单订	询价
深圳市联世界科技有限公司	2SA1942-O(Q)	TOSHIBA	24+/25+		208	原装正品现货库存价优	询价
千层芯半导体(深圳)有限公司	2SA1943	TOSHIBA	24+	TO-3P	2500	原装现货热卖	询价
深圳市赛美科科技有限公司	2SA1942	TOSHIBA		160V12A12	8560	一级代理原装正品假一罚十价格优势长期供货	询价
深圳市正纳电子有限公司	2SA1942	TOSHIBA(东芝)	23+	NA	20094	正纳10年以上分销经验原装进口正品做服务做口碑有支持	询价
深圳市明嘉莱科技有限公司	2SA1942	TOSHIBA/东芝	25+	160V12A120W	880000	明嘉莱只做原装正品现货	询价

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