2SA1875晶体管资料

  • 2SA1875别名:2SA1875三极管、2SA1875晶体管、2SA1875晶体三极管

  • 2SA1875生产厂家

  • 2SA1875制作材料:Si-PNP

  • 2SA1875性质:视频输出 (Vid)_输出极 (E)_HI_DEF

  • 2SA1875封装形式:直插封装

  • 2SA1875极限工作电压:200V

  • 2SA1875最大电流允许值:0.3A

  • 2SA1875最大工作频率:400MHZ

  • 2SA1875引脚数:3

  • 2SA1875最大耗散功率:12W

  • 2SA1875放大倍数

  • 2SA1875图片代号:H-65

  • 2SA1875vtest:200

  • 2SA1875htest:400000000

  • 2SA1875atest:0.3

  • 2SA1875wtest:12

  • 2SA1875代换 2SA1875用什么型号代替:2SA1749,

型号 功能描述 生产厂家 企业 LOGO 操作
2SA1875

High-voltage Switching Transistor

Features ● High fT : fT=400MHz(typ). ● High breakdown voltage : VCEO ≥ 200V(min). ● Large current capacitance. ● Adoption of FBET process.

KEXIN

科信电子

2SA1875

High-Definition CRT Display Video Output Applications

High-Definition CRT Display Video Output Applications Features • High fT : fT=400MHz(typ). • High breakdown voltage : VCEO≥200V(min). • Large current capacitance. • Small reverse transfer capacitance and excellent high-frequency characteristic : Cre=3.4pF(NPN), 4.2pF(PNP). • Adoption of FBET

SANYO

三洋

2SA1875

Silicon PNP Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -200V(Min) ·DC Current Gain- : hFE= 60(Min)@ IC= -50mA ·Fast switching speed ·Large current capacity APPLICATIONS ·Power amplifier applications ·Driver stage amplifier applications

ISC

无锡固电

2SA1875

Silicon PNP Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -200V(Min) ·DC Current Gain- : hFE= 60(Min)@ IC= -50mA ·Fast switching speed ·Large current capacity APPLICATIONS ·Power amplifier applications ·Driver stage amplifier applications

ISC

无锡固电

2SA1875

PNP Epitaxial Planar Silicon Transistors High-Definition CRT Display Video Output Applications

ONSEMI

安森美半导体

Silicon PNP Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -200V(Min) ·DC Current Gain- : hFE= 60(Min)@ IC= -50mA ·Fast switching speed ·Large current capacity APPLICATIONS ·Power amplifier applications ·Driver stage amplifier applications

ISC

无锡固电

Silicon PNP Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -200V(Min) ·DC Current Gain- : hFE= 60(Min)@ IC= -50mA ·Fast switching speed ·Large current capacity APPLICATIONS ·Power amplifier applications ·Driver stage amplifier applications

ISC

无锡固电

PNP Transistors

文件:1.27345 Mbytes Page:3 Pages

KEXIN

科信电子

PNP Transistors

文件:1.27345 Mbytes Page:3 Pages

KEXIN

科信电子

PNP Transistors

文件:1.27345 Mbytes Page:3 Pages

KEXIN

科信电子

PNP Transistors

文件:1.27345 Mbytes Page:3 Pages

KEXIN

科信电子

更新时间:2025-12-25 8:02:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
SHINDENGEN/新电元
22+
SOT-252
100000
代理渠道/只做原装/可含税
SHINDENGEN/新电元
24+
NA/
1000
优势代理渠道,原装正品,可全系列订货开增值税票
SANYO
24+
TO-252
25600
SANYO
2023+
TO-252
50000
原装现货
SHINDENGE
23+
6800
专注配单,只做原装进口现货
SANYO/三洋
22+
TO-251
6000
十年配单,只做原装
NK/南科功率
2025+
TO-252
986966
国产
ST/意法
23+
TO-220
69820
终端可以免费供样,支持BOM配单!
新电源
24+
T0-251/252
6430
原装现货/欢迎来电咨询
SHINDENGEN/新电元
24+
SOT-252
60000
全新原装现货

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