PNP Transistors

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Silicon PNP Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -200V(Min) ·DC Current Gain- : hFE= 60(Min)@ IC= -50mA ·Fast switching speed ·Large current capacity APPLICATIONS ·Power amplifier applications ·Driver stage amplifier applications

Silicon PNP Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -200V(Min) ·DC Current Gain- : hFE= 60(Min)@ IC= -50mA ·Fast switching speed ·Large current capacity APPLICATIONS ·Power amplifier applications ·Driver stage amplifier applications

High-voltage Switching Transistor

Features ● High fT : fT=400MHz(typ). ● High breakdown voltage : VCEO ≥ 200V(min). ● Large current capacitance. ● Adoption of FBET process.

High-Definition CRT Display Video Output Applications

High-Definition CRT Display Video Output Applications Features • High fT : fT=400MHz(typ). • High breakdown voltage : VCEO≥200V(min). • Large current capacitance. • Small reverse transfer capacitance and excellent high-frequency characteristic : Cre=3.4pF(NPN), 4.2pF(PNP). • Adoption of FBET

PNP Transistors

文件：1.27345 Mbytes Page：3 Pages