2SA177晶体管资料

  • 2SA1770别名:2SA1770三极管、2SA1770晶体管、2SA1770晶体三极管

  • 2SA1770生产厂家:日本三洋公司

  • 2SA1770制作材料:Si-PNP

  • 2SA1770性质:开关管 (S)

  • 2SA1770封装形式:直插封装

  • 2SA1770极限工作电压:180V

  • 2SA1770最大电流允许值:1.5A

  • 2SA1770最大工作频率:<1MHZ或未知

  • 2SA1770引脚数:3

  • 2SA1770最大耗散功率:1W

  • 2SA1770放大倍数

  • 2SA1770图片代号:A-68

  • 2SA1770vtest:180

  • 2SA1770htest:999900

  • 2SA1770atest:1.5

  • 2SA1770wtest:1

  • 2SA1770代换 2SA1770用什么型号代替:2SB1212,2SB1545,

2SA177价格

参考价格:¥1.3025

型号:2SA1770S-AN 品牌:ON Semiconductor 备注:这里有2SA177多少钱,2025年最近7天走势,今日出价,今日竞价,2SA177批发/采购报价,2SA177行情走势销售排行榜,2SA177报价。
型号 功能描述 生产厂家&企业 LOGO 操作

High-Voltage Switching Applications

PNP/NPN Epitaxial Planar Silicon Transistor Features • Adoption of MBIT process • High breakdown voltage and large current capacity

SANYOSanyo Semicon Device

三洋三洋电机株式会社

isc Silicon PNP Power Transistor

DESCRIPTION • High breakdown voltage and large current capacity • Small and slim package permitting • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation • Complementary to 2SC4614 APPLICATIONS • High voltage switching application

ISC

无锡固电

Bipolar Transistor (-)160V, (-)1.5A, Low VCE(sat), (PNP)NPN Single NMP

Features • Adoption of MBIT process • High breakdown voltage and large current capacity

ONSEMI

安森美半导体

Bipolar Transistor (-)160V, (-)1.5A, Low VCE(sat), (PNP)NPN Single NMP

Features • Adoption of MBIT process • High breakdown voltage and large current capacity

ONSEMI

安森美半导体

Bipolar Transistor (-)160V, (-)1.5A, Low VCE(sat), (PNP)NPN Single NMP

Features • Adoption of MBIT process • High breakdown voltage and large current capacity

ONSEMI

安森美半导体

Silicon PNP Power Transistors

DESCRIPTION ·With TO-220F package ·Low collector saturation voltage ·High speed switching time APPLICATIONS ·High current switching

ISC

无锡固电

TRANSISTOR (HIGH CURRENT SWITCHING APPLICATIONS)

High-Current Switching Applications • Low collector saturation voltage: VCE (sat)= −0.4 V (max) (IC= −6 A) • High-speed switching: tstg= 0.6 μs (typ.) • High emitter-base breakdown voltage: V (BR) EBO= −14 V (min)

TOSHIBA

东芝

Silicon PNP Power Transistors

DESCRIPTION ·With TO-220F package ·Low collector saturation voltage ·High speed switching time APPLICATIONS ·High current switching

JMNIC

锦美电子

Silicon PNP Power Transistors

DESCRIPTION ·With TO-220F package ·Low collector saturation voltage ·High speed switching time APPLICATIONS ·High current switching

SAVANTIC

PNP Epitaxial Planar Silicon Transistor

Features High breadown voltage Large current capacity (IC=1A)

KEXIN

科信电子

High Voltage Driver Applications??????????

High-Voltage Driver Applications Features • Large current capacity (IC=1A). • High breakdown votlage (VCEO≥400V).

SANYOSanyo Semicon Device

三洋三洋电机株式会社

High Voltage Driver Applications????????????

High-Voltage Driver Applications Features • Large current capacity (IC=2A). • High breakdown voltage (VCEO≥400V).

SANYOSanyo Semicon Device

三洋三洋电机株式会社

General Purpose Transistor

Features 1) Excellent hFE linearity. 2) Complements the 2SC2412K / 2SC4081 / 2SC4617 / 2SC5658 / 2SC1740S.

ROHM

罗姆

PNP General Purpose Transistors

PNP General Purpose Transistors

WEITRON

GENERAL PURPOSE TRANSISTOR

GENERAL PURPOSE TRANSISTOR FEATURES * Excellent hFE linearity * Complements the UTC 2SC4617

UTC

友顺

PNP Silicon General Purpose Transistor

FEATURES • Low COB. COB=4.0pF • Complements the 2SC4617

SECOSSeCoS Halbleitertechnologie GmbH

喜可士喜可士股份有限公司

PNP GENERAL PURPOSE AMPLIFIER TRANSISTORS SURFACE MOUNT

This PNP transistor is designed for general purpose amplifier applications. This device is housed in the SC−75/SOT−416/SC−90 package which is designed for low power surface mount applications, where board space is at a premium. Features • Reduces Board Space • High hFE, 210−460 (typical

ONSEMI

安森美半导体

Plastic-Encapsulated Transistors

TRANSISTOR (PNP) FEATURES Power dissipation PCM : 0.15 W (Tamb=25℃) Collector current ICM : -0.15 A Collector-base voltage V(BR)CBO : -60 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃

TEL

东电电子

TRANSISTOR (PNP)

FEATURES Power dissipation PCM : 0.15 W (Tamb=25℃) Collector current ICM : -0.15 A Collector-base voltage V(BR)CBO : -60 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃

WINNERJOIN

永而佳

General Purpose Transistor (??0V, ??.15A)

Features 1) General Purpose. 2) Complementary NPN Types : 2SC5658 (VMT3) / 2SC4617EB (EMT3F) / 2SC4617 (EMT3) / 2SC4081UB (UMT3F) / 2SC4081 (UMT3) / 2SC2412 (SMT3) 3) Complex transistors : EMT1 / EMT2 / EMT3 (EMT6) / UMT1N / UMT2N (UMT6) / IMT1A / IMT2A / IMT3A (SMT6) 4) Lead Free/RoHS Compli

ROHM

罗姆

General Purpose Transistor (??0V, ??.15A)

Features 1) General Purpose. 2) Complementary NPN Types : 2SC5658 (VMT3) / 2SC4617EB (EMT3F) / 2SC4617 (EMT3) / 2SC4081UB (UMT3F) / 2SC4081 (UMT3) / 2SC2412 (SMT3) 3) Complex transistors : EMT1 / EMT2 / EMT3 (EMT6) / UMT1N / UMT2N (UMT6) / IMT1A / IMT2A / IMT3A (SMT6) 4) Lead Free/RoHS Compli

ROHM

罗姆

General Purpose Transistor (??0V, ??.15A)

Features 1) General Purpose. 2) Complementary NPN Types : 2SC5658 (VMT3) / 2SC4617EB (EMT3F) / 2SC4617 (EMT3) / 2SC4081UB (UMT3F) / 2SC4081 (UMT3) / 2SC2412 (SMT3) 3) Complex transistors : EMT1 / EMT2 / EMT3 (EMT6) / UMT1N / UMT2N (UMT6) / IMT1A / IMT2A / IMT3A (SMT6) 4) Lead Free/RoHS Compli

ROHM

罗姆

SOT-523 Plastic-Encapsulate Transistors

TRANSISTOR (PNP) FEATURES ● Reduces Board Space ● High hFE ● Low VCE(sat)

JIANGSU

长电科技

General Purpose Transistor (-50V, -150mA)

Features 1) Excellent hFE linearity. 2) Complements the 2SC2412K / 2SC4081 / 2SC4617 / 2SC5658 / 2SC1740S.

ROHM

罗姆

PNP General Purpose Transistor

FEATURES ● Excellent hFE linearity. ● Complementary NPN type available (2SC4617). ● MSL 1 APPLICATIONS ● Epitaxial planar type. ● PNP silicon transistor

BILIN

银河微电

General Purpose Transistor (-50V, -150mA)

Features 1)Excellent hFE linearity. 2)Complements the 2SC4617E3 HZG. Application GENERAL PURPOSE SMALL SIGNAL AMPLIFIER

ROHM

罗姆

General Purpose Transistor (-50V, -150mA)

Features 1) Excellent hFE linearity. 2) Complements the 2SC2412K / 2SC4081 / 2SC4617 / 2SC5658 / 2SC1740S.

ROHM

罗姆

General Purpose Transistor

Features 1) General Purpose. 2) Complementary:2SC5658/2SC4617EB /2SC4617/2SC4081UB/2SC4081/2SC2412K 3) Lead Free/RoHS Compliant. Application Switching circuit, LED driver circuit

ROHM

罗姆

PNP Silicon General Purpose Amplifier Transistor

PNP Silicon General Purpose Amplifier Transistor This PNP transistor is designed for general purpose amplifier applications. This device is housed in the SC−75/SOT−416/SC−90 package which is designed for low power surface mount applications, where board space is at a premium. Features • Reduces

ONSEMI

安森美半导体

General Purpose Transistor

Features 1) Excellent hFE linearity. 2) Complements the 2SC2412K / 2SC4081 / 2SC4617 / 2SC5658 / 2SC1740S.

ROHM

罗姆

General Purpose Transistor

Features 1) Excellent hFE linearity. 2) Complements the 2SC2412K / 2SC4081 / 2SC4617 / 2SC5658 / 2SC1740S.

ROHM

罗姆

General Purpose Transistor

Features 1) Excellent hFE linearity. 2) Complements the 2SC2412K / 2SC4081 / 2SC4617 / 2SC5658 / 2SC1740S.

ROHM

罗姆

General Purpose Transistor

Features 1) Excellent hFE linearity. 2) Complements the 2SC2412K / 2SC4081 / 2SC4617 / 2SC5658 / 2SC1740S.

ROHM

罗姆

General Purpose Transistor

Features 1) Excellent hFE linearity. 2) Complements the 2SC2412K / 2SC4081 / 2SC4617 / 2SC5658 / 2SC1740S.

ROHM

罗姆

General Purpose Transistor

Features 1) Excellent hFE linearity. 2) Complements the 2SC2412K / 2SC4081 / 2SC4617 / 2SC5658 / 2SC1740S.

ROHM

罗姆

General Purpose Transistor

Features 1) Excellent hFE linearity. 2) Complements the 2SC2412K / 2SC4081 / 2SC4617 / 2SC5658 / 2SC1740S.

ROHM

罗姆

PNP Silicon General Purpose Amplifier Transistor

PNP Silicon General Purpose Amplifier Transistor This PNP transistor is designed for general purpose amplifier applications. This device is housed in the SC−75/SOT−416/SC−90 package which is designed for low power surface mount applications, where board space is at a premium. Features • Reduces

ONSEMI

安森美半导体

High-voltage Switching Transistor (Telephone power supply)

High-voltage Switching Transistor (Telephone power supply) (-400V, -0.5A) Features 1) High breakdown voltage, BVCEO= -400V. 2) Low saturation voltage, typically VCE (sat) = -0.3V at IC / IB = -100mA / -10mA. 3) High switching speed, typically tf : 1μs at IC = -100mA. 4) Wide SOA (safe operati

ROHM

罗姆

High-voltage Switching Transistor (-400V, -0.5A)

High-voltage Switching Transistor (Telephone power supply) (-400V, -0.5A) Features 1) High breakdown voltage, BVCEO= -400V. 2) Low saturation voltage, typically VCE (sat) = -0.3V at IC / IB = -100mA / -10mA. 3) High switching speed, typically tf : 1μs at IC = -100mA. 4) Wide SOA (safe operati

ROHM

罗姆

Very High-Definition CRT Display, Video Output Applications????

Very High-Definition CRT Display Video Output Applications Features • High fT : fT=400MHz (typ). • High breakdown voltage : VCEO≥250V(min). • High current. • Small reverse transfer capacitance and excellent high-frequnecy characteristic : Cre=3.4pF (NPN), 4.2pF (PNP). • Complementary pair

SANYOSanyo Semicon Device

三洋三洋电机株式会社

VHF Converter, Local Oscillator Applications

VHF Converter, Local Oscillator Applications Features · High power gain (PG=13dB typ ; f=0.4GHz). · High cutoff frequency (fT=1.2GHz typ). · Low Cob (Cob=1.0pF typ). · Complementary pair with the 2SC4269.

SANYOSanyo Semicon Device

三洋三洋电机株式会社

High-Voltage Switching Applications

文件:515.169 Kbytes Page:7 Pages

SANYOSanyo Semicon Device

三洋三洋电机株式会社

High-Voltage Switching Applications

文件:515.169 Kbytes Page:7 Pages

SANYOSanyo Semicon Device

三洋三洋电机株式会社

High-Voltage Switching Applications

文件:515.169 Kbytes Page:7 Pages

SANYOSanyo Semicon Device

三洋三洋电机株式会社

High-Voltage Switching Applications

文件:515.169 Kbytes Page:7 Pages

SANYOSanyo Semicon Device

三洋三洋电机株式会社

High-Voltage Switching Applications

文件:515.169 Kbytes Page:7 Pages

SANYOSanyo Semicon Device

三洋三洋电机株式会社

封装/外壳:SC-71 包装:卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带 描述:TRANS PNP 160V 1.5A 3NMP 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个

ONSEMI

安森美半导体

Silicon PNP Power Transistor

文件:124.55 Kbytes Page:2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

Silicon PNP Power Transistors

文件:206.67 Kbytes Page:4 Pages

JMNIC

锦美电子

High-Current Switching Applications

文件:153.94 Kbytes Page:5 Pages

TOSHIBA

东芝

High-Current Switching Applications

文件:153.94 Kbytes Page:5 Pages

TOSHIBA

东芝

Silicon PNP Power Transistors

文件:206.67 Kbytes Page:4 Pages

JMNIC

锦美电子

PNP Epitaxial Planar Silicon Transistor

文件:44 Kbytes Page:2 Pages

KEXIN

科信电子

isc Silicon PNP Power Transistor

文件:356.14 Kbytes Page:2 Pages

ISC

无锡固电

PNP Transistors

文件:1.16779 Mbytes Page:2 Pages

KEXIN

科信电子

PNP General Purpose Transistor

文件:260.43 Kbytes Page:4 Pages

BILIN

银河微电

PNP Silicon General Purpose Transistor

文件:230.41 Kbytes Page:2 Pages

SECOSSeCoS Halbleitertechnologie GmbH

喜可士喜可士股份有限公司

PNP Silicon General Purpose Amplifier Transistor

文件:53.47 Kbytes Page:4 Pages

ONSEMI

安森美半导体

General Purpose Transistor

文件:72.18 Kbytes Page:4 Pages

ROHM

罗姆

GENERAL PURPOSE TRANSISTOR

文件:204.66 Kbytes Page:3 Pages

UTC

友顺

2SA177产品属性

  • 类型

    描述

  • 型号

    2SA177

  • 功能描述

    两极晶体管 - BJT BIP PNP 1.5A 160V

  • RoHS

  • 制造商

    STMicroelectronics

  • 晶体管极性

    PNP 集电极—基极电压

  • VCBO

    集电极—发射极最大电压

  • VCEO

    - 40 V 发射极 - 基极电压

  • VEBO

    - 6 V

  • 增益带宽产品fT

    直流集电极/Base Gain hfe

  • Min

    100 A

  • 安装风格

    SMD/SMT

  • 封装/箱体

    PowerFLAT 2 x 2

更新时间:2025-8-7 23:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
TOSHIBA/东芝
24+
NA/
368
优势代理渠道,原装正品,可全系列订货开增值税票
TOSHIBA/东芝
25+
TO220F
54648
百分百原装现货 实单必成 欢迎询价
TOSHIBA/东芝
24+
TO220F
990000
明嘉莱只做原装正品现货
TOSHIBA
1844+
NA
9852
只做原装正品假一赔十为客户做到零风险!!
SANYO
25+23+
TO251
72207
绝对原装正品现货,全新深圳原装进口现货
NEC
22+
TO-252
16565
原装正品现货,可开13点税
SANYO/三洋
23+
TO-252
30000
原厂授权代理,海外优势订货渠道。可提供大量库存,详
24+
TO-220F
10000
全新
PANASONIC
25+
TO-TO-220F
67600
独立分销商 公司只做原装 诚心经营 免费试样正品保证
PANASONIC/松下
22+
TO-220F
25000
只做原装进口现货,专注配单

2SA177数据表相关新闻