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2SA177晶体管资料
2SA1770别名:2SA1770三极管、2SA1770晶体管、2SA1770晶体三极管
2SA1770生产厂家:日本三洋公司
2SA1770制作材料:Si-PNP
2SA1770性质:开关管 (S)
2SA1770封装形式:直插封装
2SA1770极限工作电压:180V
2SA1770最大电流允许值:1.5A
2SA1770最大工作频率:<1MHZ或未知
2SA1770引脚数:3
2SA1770最大耗散功率:1W
2SA1770放大倍数:
2SA1770图片代号:A-68
2SA1770vtest:180
2SA1770htest:999900
- 2SA1770atest:1.5
2SA1770wtest:1
2SA1770代换 2SA1770用什么型号代替:2SB1212,2SB1545,
2SA177价格
参考价格:¥1.3025
型号:2SA1770S-AN 品牌:ON Semiconductor 备注:这里有2SA177多少钱,2025年最近7天走势,今日出价,今日竞价,2SA177批发/采购报价,2SA177行情走势销售排行榜,2SA177报价。型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
---|---|---|---|---|
High-Voltage Switching Applications PNP/NPN Epitaxial Planar Silicon Transistor Features • Adoption of MBIT process • High breakdown voltage and large current capacity | SANYOSanyo Semicon Device 三洋三洋电机株式会社 | |||
isc Silicon PNP Power Transistor DESCRIPTION • High breakdown voltage and large current capacity • Small and slim package permitting • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation • Complementary to 2SC4614 APPLICATIONS • High voltage switching application | ISC 无锡固电 | |||
Bipolar Transistor (-)160V, (-)1.5A, Low VCE(sat), (PNP)NPN Single NMP Features • Adoption of MBIT process • High breakdown voltage and large current capacity | ONSEMI 安森美半导体 | |||
Bipolar Transistor (-)160V, (-)1.5A, Low VCE(sat), (PNP)NPN Single NMP Features • Adoption of MBIT process • High breakdown voltage and large current capacity | ONSEMI 安森美半导体 | |||
Bipolar Transistor (-)160V, (-)1.5A, Low VCE(sat), (PNP)NPN Single NMP Features • Adoption of MBIT process • High breakdown voltage and large current capacity | ONSEMI 安森美半导体 | |||
Silicon PNP Power Transistors DESCRIPTION ·With TO-220F package ·Low collector saturation voltage ·High speed switching time APPLICATIONS ·High current switching | ISC 无锡固电 | |||
TRANSISTOR (HIGH CURRENT SWITCHING APPLICATIONS) High-Current Switching Applications • Low collector saturation voltage: VCE (sat)= −0.4 V (max) (IC= −6 A) • High-speed switching: tstg= 0.6 μs (typ.) • High emitter-base breakdown voltage: V (BR) EBO= −14 V (min) | TOSHIBA 东芝 | |||
Silicon PNP Power Transistors DESCRIPTION ·With TO-220F package ·Low collector saturation voltage ·High speed switching time APPLICATIONS ·High current switching | JMNIC 锦美电子 | |||
Silicon PNP Power Transistors DESCRIPTION ·With TO-220F package ·Low collector saturation voltage ·High speed switching time APPLICATIONS ·High current switching | SAVANTIC | |||
PNP Epitaxial Planar Silicon Transistor Features High breadown voltage Large current capacity (IC=1A) | KEXIN 科信电子 | |||
High Voltage Driver Applications?????????? High-Voltage Driver Applications Features • Large current capacity (IC=1A). • High breakdown votlage (VCEO≥400V). | SANYOSanyo Semicon Device 三洋三洋电机株式会社 | |||
High Voltage Driver Applications???????????? High-Voltage Driver Applications Features • Large current capacity (IC=2A). • High breakdown voltage (VCEO≥400V). | SANYOSanyo Semicon Device 三洋三洋电机株式会社 | |||
General Purpose Transistor Features 1) Excellent hFE linearity. 2) Complements the 2SC2412K / 2SC4081 / 2SC4617 / 2SC5658 / 2SC1740S. | ROHM 罗姆 | |||
PNP General Purpose Transistors PNP General Purpose Transistors | WEITRON | |||
GENERAL PURPOSE TRANSISTOR GENERAL PURPOSE TRANSISTOR FEATURES * Excellent hFE linearity * Complements the UTC 2SC4617 | UTC 友顺 | |||
PNP Silicon General Purpose Transistor FEATURES • Low COB. COB=4.0pF • Complements the 2SC4617 | SECOSSeCoS Halbleitertechnologie GmbH 喜可士喜可士股份有限公司 | |||
PNP GENERAL PURPOSE AMPLIFIER TRANSISTORS SURFACE MOUNT This PNP transistor is designed for general purpose amplifier applications. This device is housed in the SC−75/SOT−416/SC−90 package which is designed for low power surface mount applications, where board space is at a premium. Features • Reduces Board Space • High hFE, 210−460 (typical | ONSEMI 安森美半导体 | |||
Plastic-Encapsulated Transistors TRANSISTOR (PNP) FEATURES Power dissipation PCM : 0.15 W (Tamb=25℃) Collector current ICM : -0.15 A Collector-base voltage V(BR)CBO : -60 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃ | TEL 东电电子 | |||
TRANSISTOR (PNP) FEATURES Power dissipation PCM : 0.15 W (Tamb=25℃) Collector current ICM : -0.15 A Collector-base voltage V(BR)CBO : -60 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃ | WINNERJOIN 永而佳 | |||
General Purpose Transistor (??0V, ??.15A) Features 1) General Purpose. 2) Complementary NPN Types : 2SC5658 (VMT3) / 2SC4617EB (EMT3F) / 2SC4617 (EMT3) / 2SC4081UB (UMT3F) / 2SC4081 (UMT3) / 2SC2412 (SMT3) 3) Complex transistors : EMT1 / EMT2 / EMT3 (EMT6) / UMT1N / UMT2N (UMT6) / IMT1A / IMT2A / IMT3A (SMT6) 4) Lead Free/RoHS Compli | ROHM 罗姆 | |||
General Purpose Transistor (??0V, ??.15A) Features 1) General Purpose. 2) Complementary NPN Types : 2SC5658 (VMT3) / 2SC4617EB (EMT3F) / 2SC4617 (EMT3) / 2SC4081UB (UMT3F) / 2SC4081 (UMT3) / 2SC2412 (SMT3) 3) Complex transistors : EMT1 / EMT2 / EMT3 (EMT6) / UMT1N / UMT2N (UMT6) / IMT1A / IMT2A / IMT3A (SMT6) 4) Lead Free/RoHS Compli | ROHM 罗姆 | |||
General Purpose Transistor (??0V, ??.15A) Features 1) General Purpose. 2) Complementary NPN Types : 2SC5658 (VMT3) / 2SC4617EB (EMT3F) / 2SC4617 (EMT3) / 2SC4081UB (UMT3F) / 2SC4081 (UMT3) / 2SC2412 (SMT3) 3) Complex transistors : EMT1 / EMT2 / EMT3 (EMT6) / UMT1N / UMT2N (UMT6) / IMT1A / IMT2A / IMT3A (SMT6) 4) Lead Free/RoHS Compli | ROHM 罗姆 | |||
SOT-523 Plastic-Encapsulate Transistors TRANSISTOR (PNP) FEATURES ● Reduces Board Space ● High hFE ● Low VCE(sat) | JIANGSU 长电科技 | |||
General Purpose Transistor (-50V, -150mA) Features 1) Excellent hFE linearity. 2) Complements the 2SC2412K / 2SC4081 / 2SC4617 / 2SC5658 / 2SC1740S. | ROHM 罗姆 | |||
PNP General Purpose Transistor FEATURES ● Excellent hFE linearity. ● Complementary NPN type available (2SC4617). ● MSL 1 APPLICATIONS ● Epitaxial planar type. ● PNP silicon transistor | BILIN 银河微电 | |||
General Purpose Transistor (-50V, -150mA) Features 1)Excellent hFE linearity. 2)Complements the 2SC4617E3 HZG. Application GENERAL PURPOSE SMALL SIGNAL AMPLIFIER | ROHM 罗姆 | |||
General Purpose Transistor (-50V, -150mA) Features 1) Excellent hFE linearity. 2) Complements the 2SC2412K / 2SC4081 / 2SC4617 / 2SC5658 / 2SC1740S. | ROHM 罗姆 | |||
General Purpose Transistor Features 1) General Purpose. 2) Complementary:2SC5658/2SC4617EB /2SC4617/2SC4081UB/2SC4081/2SC2412K 3) Lead Free/RoHS Compliant. Application Switching circuit, LED driver circuit | ROHM 罗姆 | |||
PNP Silicon General Purpose Amplifier Transistor PNP Silicon General Purpose Amplifier Transistor This PNP transistor is designed for general purpose amplifier applications. This device is housed in the SC−75/SOT−416/SC−90 package which is designed for low power surface mount applications, where board space is at a premium. Features • Reduces | ONSEMI 安森美半导体 | |||
General Purpose Transistor Features 1) Excellent hFE linearity. 2) Complements the 2SC2412K / 2SC4081 / 2SC4617 / 2SC5658 / 2SC1740S. | ROHM 罗姆 | |||
General Purpose Transistor Features 1) Excellent hFE linearity. 2) Complements the 2SC2412K / 2SC4081 / 2SC4617 / 2SC5658 / 2SC1740S. | ROHM 罗姆 | |||
General Purpose Transistor Features 1) Excellent hFE linearity. 2) Complements the 2SC2412K / 2SC4081 / 2SC4617 / 2SC5658 / 2SC1740S. | ROHM 罗姆 | |||
General Purpose Transistor Features 1) Excellent hFE linearity. 2) Complements the 2SC2412K / 2SC4081 / 2SC4617 / 2SC5658 / 2SC1740S. | ROHM 罗姆 | |||
General Purpose Transistor Features 1) Excellent hFE linearity. 2) Complements the 2SC2412K / 2SC4081 / 2SC4617 / 2SC5658 / 2SC1740S. | ROHM 罗姆 | |||
General Purpose Transistor Features 1) Excellent hFE linearity. 2) Complements the 2SC2412K / 2SC4081 / 2SC4617 / 2SC5658 / 2SC1740S. | ROHM 罗姆 | |||
General Purpose Transistor Features 1) Excellent hFE linearity. 2) Complements the 2SC2412K / 2SC4081 / 2SC4617 / 2SC5658 / 2SC1740S. | ROHM 罗姆 | |||
PNP Silicon General Purpose Amplifier Transistor PNP Silicon General Purpose Amplifier Transistor This PNP transistor is designed for general purpose amplifier applications. This device is housed in the SC−75/SOT−416/SC−90 package which is designed for low power surface mount applications, where board space is at a premium. Features • Reduces | ONSEMI 安森美半导体 | |||
High-voltage Switching Transistor (Telephone power supply) High-voltage Switching Transistor (Telephone power supply) (-400V, -0.5A) Features 1) High breakdown voltage, BVCEO= -400V. 2) Low saturation voltage, typically VCE (sat) = -0.3V at IC / IB = -100mA / -10mA. 3) High switching speed, typically tf : 1μs at IC = -100mA. 4) Wide SOA (safe operati | ROHM 罗姆 | |||
High-voltage Switching Transistor (-400V, -0.5A) High-voltage Switching Transistor (Telephone power supply) (-400V, -0.5A) Features 1) High breakdown voltage, BVCEO= -400V. 2) Low saturation voltage, typically VCE (sat) = -0.3V at IC / IB = -100mA / -10mA. 3) High switching speed, typically tf : 1μs at IC = -100mA. 4) Wide SOA (safe operati | ROHM 罗姆 | |||
Very High-Definition CRT Display, Video Output Applications???? Very High-Definition CRT Display Video Output Applications Features • High fT : fT=400MHz (typ). • High breakdown voltage : VCEO≥250V(min). • High current. • Small reverse transfer capacitance and excellent high-frequnecy characteristic : Cre=3.4pF (NPN), 4.2pF (PNP). • Complementary pair | SANYOSanyo Semicon Device 三洋三洋电机株式会社 | |||
VHF Converter, Local Oscillator Applications VHF Converter, Local Oscillator Applications Features · High power gain (PG=13dB typ ; f=0.4GHz). · High cutoff frequency (fT=1.2GHz typ). · Low Cob (Cob=1.0pF typ). · Complementary pair with the 2SC4269. | SANYOSanyo Semicon Device 三洋三洋电机株式会社 | |||
High-Voltage Switching Applications 文件:515.169 Kbytes Page:7 Pages | SANYOSanyo Semicon Device 三洋三洋电机株式会社 | |||
High-Voltage Switching Applications 文件:515.169 Kbytes Page:7 Pages | SANYOSanyo Semicon Device 三洋三洋电机株式会社 | |||
High-Voltage Switching Applications 文件:515.169 Kbytes Page:7 Pages | SANYOSanyo Semicon Device 三洋三洋电机株式会社 | |||
High-Voltage Switching Applications 文件:515.169 Kbytes Page:7 Pages | SANYOSanyo Semicon Device 三洋三洋电机株式会社 | |||
High-Voltage Switching Applications 文件:515.169 Kbytes Page:7 Pages | SANYOSanyo Semicon Device 三洋三洋电机株式会社 | |||
封装/外壳:SC-71 包装:卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带 描述:TRANS PNP 160V 1.5A 3NMP 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个 | ONSEMI 安森美半导体 | |||
Silicon PNP Power Transistor 文件:124.55 Kbytes Page:2 Pages | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | |||
Silicon PNP Power Transistors 文件:206.67 Kbytes Page:4 Pages | JMNIC 锦美电子 | |||
High-Current Switching Applications 文件:153.94 Kbytes Page:5 Pages | TOSHIBA 东芝 | |||
High-Current Switching Applications 文件:153.94 Kbytes Page:5 Pages | TOSHIBA 东芝 | |||
Silicon PNP Power Transistors 文件:206.67 Kbytes Page:4 Pages | JMNIC 锦美电子 | |||
PNP Epitaxial Planar Silicon Transistor 文件:44 Kbytes Page:2 Pages | KEXIN 科信电子 | |||
isc Silicon PNP Power Transistor 文件:356.14 Kbytes Page:2 Pages | ISC 无锡固电 | |||
PNP Transistors 文件:1.16779 Mbytes Page:2 Pages | KEXIN 科信电子 | |||
PNP General Purpose Transistor 文件:260.43 Kbytes Page:4 Pages | BILIN 银河微电 | |||
PNP Silicon General Purpose Transistor 文件:230.41 Kbytes Page:2 Pages | SECOSSeCoS Halbleitertechnologie GmbH 喜可士喜可士股份有限公司 | |||
PNP Silicon General Purpose Amplifier Transistor 文件:53.47 Kbytes Page:4 Pages | ONSEMI 安森美半导体 | |||
General Purpose Transistor 文件:72.18 Kbytes Page:4 Pages | ROHM 罗姆 | |||
GENERAL PURPOSE TRANSISTOR 文件:204.66 Kbytes Page:3 Pages | UTC 友顺 |
2SA177产品属性
- 类型
描述
- 型号
2SA177
- 功能描述
两极晶体管 - BJT BIP PNP 1.5A 160V
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
PNP 集电极—基极电压
- VCBO
集电极—发射极最大电压
- VCEO
- 40 V 发射极 - 基极电压
- VEBO
- 6 V
- 增益带宽产品fT
直流集电极/Base Gain hfe
- Min
100 A
- 安装风格
SMD/SMT
- 封装/箱体
PowerFLAT 2 x 2
IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
TOSHIBA/东芝 |
24+ |
NA/ |
368 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
TOSHIBA/东芝 |
25+ |
TO220F |
54648 |
百分百原装现货 实单必成 欢迎询价 |
|||
TOSHIBA/东芝 |
24+ |
TO220F |
990000 |
明嘉莱只做原装正品现货 |
|||
TOSHIBA |
1844+ |
NA |
9852 |
只做原装正品假一赔十为客户做到零风险!! |
|||
SANYO |
25+23+ |
TO251 |
72207 |
绝对原装正品现货,全新深圳原装进口现货 |
|||
NEC |
22+ |
TO-252 |
16565 |
原装正品现货,可开13点税 |
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SANYO/三洋 |
23+ |
TO-252 |
30000 |
原厂授权代理,海外优势订货渠道。可提供大量库存,详 |
|||
24+ |
TO-220F |
10000 |
全新 |
||||
PANASONIC |
25+ |
TO-TO-220F |
67600 |
独立分销商 公司只做原装 诚心经营 免费试样正品保证 |
|||
PANASONIC/松下 |
22+ |
TO-220F |
25000 |
只做原装进口现货,专注配单 |
2SA177规格书下载地址
2SA177参数引脚图相关
- 5000
- 4921
- 4899
- 485接口
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- 2SA1760
- 2SA176
- 2SA1759
- 2SA1758
- 2SA1757
- 2SA1755
- 2SA1753
- 2SA1752
- 2SA1751
- 2SA1750
- 2SA175
- 2SA1749
- 2SA1748
- 2SA1746
- 2SA1745
- 2SA1744
- 2SA1743
2SA177数据表相关新闻
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