High-Voltage Switching Transistor(Camera strobes and Telephone, Power supply)

(Camera strobes and Telephone, Power supply) (−400V, −0.1A) Features 1) High breakdown voltage. (BVCEO = −400V) 2) Lowsaturation voltage, typically VCE(sat)= −0.2V at IC/ IB = −20mA/ −2mA. 3) High switching speed, typicallytf=1µs at Ic =100mA. 4) Wide SOA(safe operating area). 5) Complemen

High-Voltage Switching Transistor

Features ● High breakdown voltage ● Low saturation voltage ● High switching speed

High-voltage Switching Transistor (Camera strobes and Telephone, Power supply) (−400V, −0.1A)

文件：72.63 Kbytes Page：4 Pages

High-Coltage Switching Transistor

文件：49.24 Kbytes Page：1 Pages