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HIGH VOLTAGE DRIVER APPLICATION

HIGH VOLTAGE DRIVER APPLICATION FEATURES * High breakdown voltage. * Excellent hFE linearity.

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Plastic-Encapsulated Transistors

TRANSISTOR (PNP) FEATURES Power dissipation PCM : 500 mW (Tamb=25℃) Collector current ICM : -200 mA Collector-base voltage V(BR)CBO : -400 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃

TEL

High-Voltage Driver Applications

Features ● High Breakdown Voltage ● Adoption of MBIT Process ● Excellent hFE Linearlity.

KEXIN

科信电子

Plastic-Encapsulate Transistors

FEATURES • High breadown voltage • Excellent hFE linearlity

HOTTECH

合科泰

HIGH VOLTAGE DRIVER APPLICATION

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更新时间:2026-1-5 23:01:01
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