PNP SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION) FOR HIGH-SPEED SWITCHING

PNP SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION) FOR HIGH-SPEED SWITCHING The 2SA1720 is a high-speed Darlington power transistor. This transistor is ideal for high-precision control such as PWM control for pulse motors or brushless motors in OA and FA equipment. FEATURES • Mold packa

DARLINGTON POWER TRANSISTOR

PNP SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION) FOR HIGH-SPEED SWITCHING The 2SA1720 is a high-speed Darlington power transistor. This transistor is ideal for high-precision control such as PWM control for pulse motors or brushless motors in OA and FA equipment. FEATURES Mold pack

TRANSISTOR (HIGH VOLTAGE CONTROL, PLASMA DISPLAY, NIXIE TUBE DRIVER, CATHODE RAY TUBE BRIGHTNESS CONTROL APPLICATIONS

High Voltage Control Applications Plasma Display, Nixie Tube Driver Applications Cathode Ray Tube Brightness Control Applications • High voltage: VCBO = −300 V, VCEO = −300 V • Low saturation voltage: VCE (sat) = −0.5 V (max) • Small collector output capacitance: Cob = 5.5 pF (typ.) • Comple

High-Frequency Amp, Medium-Power Amp Applications????

High-Frequency Amplifier, Medium-Power Amplifier Applications Features • High fT (fT=1.5GHz typ). • High current (IC=300mA). • Adoption of FBET process. Applications • Wideband amplifiers. • High-frequency drivers.

High-Definition CRT Display Video Output Driver Applications?

Features · High fT (fT=1.5GHz typ). · High current (IC=300mA). · Adoption of FBET process.

Video Output Driver Applications

Features • High fT (fT = 1.5GHz typ). • High Current (IC = 300mA). • Adoption of FBET process.

Silicon PNP Power Transistors

DESCRIPTION • With TO-220F package • Complement to type 2SC4511 APPLICATIONS • Audio and general purpose

Silicon PNP Power Transistors

DESCRIPTION • With TO-220F package • Complement to type 2SC4511 APPLICATIONS • Audio and general purpose

Silicon PNP Epitaxial Planar Transistor(Audio and General Purpose)

Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC4511) Application : Audio and General Purpose

Silicon PNP Power Transistors

DESCRIPTION • With TO-220F package • Complement to type 2SC4511 APPLICATIONS • Audio and general purpose

Silicon PNP Power Transistor

DESCRIPTION • Low Collector Saturation Voltage :VcE

Silicon PNP Epitaxial Planar Transistor(Audio and General Purpose)

1. Silicon PNP Epitaxial Planar Transistor(Complement to type 2SC4512) 2. Application : Audio and General Purpose

Silicon PNP Power Transistor

DESCRIPTION • Low Collector Saturation Voltage :VcE

Silicon PNP Power Transistors

DESCRIPTION • With TO-220C package • Complement to type 2SC4512 APPLICATIONS • Audio and General Purpose

Silicon PNP Power Transistors

DESCRIPTION • With TO-220C package • Complement to type 2SC4512 APPLICATIONS • Audio and General Purpose

High-voltage Switching Transistor (-400V, -0.5A)

High-voltage Switching Transistor (Telephone power supply) (-400V, -0.5A) Features 1) High breakdown voltage, BVCEO= -400V. 2) Low saturation voltage, typically VCE (sat) = -0.3V at IC / IB = -100mA / -10mA. 3) High switching speed, typically tf : 1μs at IC = -100mA. 4) Wide SOA (safe operati

High-voltage Switching Transistor (Telephone power supply)

High-voltage Switching Transistor (Telephone power supply) (-400V, -0.5A) Features 1) High breakdown voltage, BVCEO= -400V. 2) Low saturation voltage, typically VCE (sat) = -0.3V at IC / IB = -100mA / -10mA. 3) High switching speed, typically tf : 1μs at IC = -100mA. 4) Wide SOA (safe operati

High-voltage Switching Transistor (Telephone power supply)

High-voltage Switching Transistor (Telephone power supply) (-400V, -0.5A) Features 1) High breakdown voltage, BVCEO= -400V. 2) Low saturation voltage, typically VCE (sat) = -0.3V at IC / IB = -100mA / -10mA. 3) High switching speed, typically tf : 1μs at IC = -100mA. 4) Wide SOA (safe operati

High-Speed Switching Applications

· Adoption of FBET process. · Low collector-to-emitter saturation voltage. · Fast switching speed. · Small-sized package. Reference PDF : http://datasheet.ecgoo.net:81/2/2S/2SA1728.pdf

High-Speed Switching Applications

High-Speed Switching Applications Features • Adoption of FBET, MBIT processes. • Large current capacity. • Low collector-to-emitter saturation voltage. • Fast switching speed. • Small-sized package.

High-Speed Switching Applications

■ Features ● Large current capacity. ● Low collector-to-emitter saturation voltage. ● Fast switching speed. ● Small-sized package.

High Voltage Control Applications Plasma Display, Nixie Tube Driver Applications Cathode Ray Tube Brightness Control Applications

文件：192.5 Kbytes Page：5 Pages

High Voltage Control Applications Plasma Display, Nixie Tube Driver Applications Cathode Ray Tube Brightness Control Applications

文件：192.5 Kbytes Page：5 Pages

封装/外壳：TO-236-3，SC-59，SOT-23-3 包装：散装 描述：TRANS PNP 300V 0.1A SMINI 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

封装/外壳：TO-220-3 整包 包装：管件 描述：TRANS PNP 80V 6A TO220F 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

Silicon PNP Epitaxial Planar Transistor

文件：33.85 Kbytes Page：1 Pages

Silicon PNP Power Transistor

文件：124.19 Kbytes Page：2 Pages

Silicon PNP Power Transistors

文件：193.81 Kbytes Page：4 Pages

Silicon PNP Epitaxial Planar Transistor

文件：33.38 Kbytes Page：1 Pages

Silicon PNP Power Transistors

文件：193.81 Kbytes Page：4 Pages

Silicon PNP Power Transistors

文件：198.04 Kbytes Page：4 Pages

Silicon PNP Power Transistors

文件：198.04 Kbytes Page：4 Pages

High-voltage Switching Transistor ( 400V, 0.5A)

文件：31.81 Kbytes Page：1 Pages

PNP Transistors

文件：871.63 Kbytes Page：3 Pages

PNP Transistors

文件：871.63 Kbytes Page：3 Pages

PNP Transistors

文件：871.63 Kbytes Page：3 Pages

PNP Transistors

文件：871.63 Kbytes Page：3 Pages