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2SA17晶体管资料
2SA17别名:2SA17三极管、2SA17晶体管、2SA17晶体三极管
2SA17生产厂家:日本日立公司
2SA17制作材料:Ge-PNP
2SA17性质:射频/高频放大 (HF)_混频 (M)_开关管 (S)
2SA17封装形式:直插封装
2SA17极限工作电压:12V
2SA17最大电流允许值:0.015A
2SA17最大工作频率:19MHZ
2SA17引脚数:3
2SA17最大耗散功率:
2SA17放大倍数:
2SA17图片代号:C-47
2SA17vtest:12
2SA17htest:19000000
- 2SA17atest:0.015
2SA17wtest:0
2SA17代换 2SA17用什么型号代替:AF124,AF125,AF126,AF127,AF200,2N3323,2N3324,2N3325,2SA102,2SA100,3AG54A,
2SA17价格
参考价格:¥0.8004
型号:2SA1705S-AN 品牌:ON 备注:这里有2SA17多少钱,2025年最近7天走势,今日出价,今日竞价,2SA17批发/采购报价,2SA17行情走势销售排行榜,2SA17报价。型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
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High-VoltageDriverApplications High-VoltageDriverApplications Features •Highbreakdownvoltage. •AdoptionofMBITprocess. •ExcellenthFElinearity. | SANYOSanyo Semicon Device 三洋三洋电机株式会社 | |||
HIGHVOLTAGEDRIVERAPPLICATION HIGHVOLTAGEDRIVERAPPLICATION ■FEATURES *Highbreakdownvoltage. *ExcellenthFElinearity. | UTCUnisonic Technologies 友顺友顺科技股份有限公司 | |||
Plastic-EncapsulatedTransistors TRANSISTOR(NPN) FEATURES Powerdissipation PCM:1W(Tamb=25℃) Collectorcurrent ICM:-200mA Collector-basevoltage V(BR)CBO:-400V Operatingandstoragejunctiontemperaturerange TJ,Tstg:-55℃to+150℃ | TEL TRANSYS Electronics Limited | |||
TRANSISTOR(NPN) TRANSISTOR(NPN) FEATURES Powerdissipation PCM:1W(Tamb=25℃) Collectorcurrent ICM:-200mA Collector-basevoltage V(BR)CBO:-400V Operatingandstoragejunctiontemperaturerange TJ,Tstg:-55℃to+150℃ | WINNERJOINSHENZHEN YONGERJIA INDUSTRY CO.,LTD 永而佳实业深圳市永而佳实业有限公司 | |||
SiliconPNPtransistorinaTO-252PlasticPackage. Descriptions SiliconPNPtransistorinaTO-252PlasticPackage. Features Highbreakdownvoltage,adoptionofMBITprocessexcellenthFElinearity Applications Highvoltagedriverapplications. | FOSHANFoshan Blue Rocket Electronics Co.,Ltd. 蓝箭电子佛山市蓝箭电子股份有限公司 | |||
TO-251-3LPlastic-EncapsulateTransistors TRANSISTOR(PNP) FEATURES ●HighBreakdownVoltage ●AdoptionofMBITProcess ●ExcellenthFELinearity | JIANGSUJiangsu Changjiang Electronics Technology Co., Ltd 长电科技江苏长电科技股份有限公司 | |||
iscSiliconPNPPowerTransistor DESCRIPTION •Highbreakdownvoltage •LowCollector-EmitterSaturationVoltage •HighPowerDissipation- :PC=10W@TC=25℃,PC=10W@Ta=25℃ •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation APPLICATIONS •Forhighvoltagedriverapplications. | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
PNPEpitaxialPlanarSiliconTransistor FEATURES ●Highbreakdownvoltage. ●AdoptionofMBITprocess. ●ExcellenthFElinearity. | BILINGalaxy Semi-Conductor Holdings Limited 银河微电常州银河世纪微电子股份有限公司 | |||
SiliconPNPPowerTransistor DESCRIPTION ·Highbreakdownvoltage ·LowCollector-EmitterSaturationVoltage ·HighPowerDissipation- :PC=10W@TC=25℃,PC=10W@Ta=25℃ ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation APPLICATIONS ·Forhighvoltagedriverapplications. | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
SiliconPNPPowerTransistor DESCRIPTION ·Highbreakdownvoltage ·LowCollector-EmitterSaturationVoltage ·HighPowerDissipation- :PC=10W@TC=25℃,PC=10W@Ta=25℃ ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation APPLICATIONS ·Forhighvoltagedriverapplications. | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
SiliconPNPPowerTransistor DESCRIPTION ·Highbreakdownvoltage ·LowCollector-EmitterSaturationVoltage ·HighPowerDissipation- :PC=10W@TC=25℃,PC=10W@Ta=25℃ ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation APPLICATIONS ·Forhighvoltagedriverapplications. | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
SiliconPNPPowerTransistor DESCRIPTION ·Highbreakdownvoltage ·LowCollector-EmitterSaturationVoltage ·HighPowerDissipation- :PC=10W@TC=25℃,PC=10W@Ta=25℃ ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation APPLICATIONS ·Forhighvoltagedriverapplications. | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
Low-FrequencyGeneral-PurposeAmpApplications???? Low-FrequencyGeneral-PurposeAmplifierApplications Features •Largecurrentcapacity. •Lowcollector-to-emittersaturationvoltage. Applications •AFpoweramplifier,medium-speedswitching,small-sizedmotordriverapplications. | SANYOSanyo Semicon Device 三洋三洋电机株式会社 | |||
High-CurrentSwitchingApplications High-CurrentSwitchingApplications Features •AdoptionofFBET,MBITprocesses. •Lowsaturationvotlage. •Largecurrentcapacity. •Fastswitchingspeed. | SANYOSanyo Semicon Device 三洋三洋电机株式会社 | |||
Low-FrequencyAmp,ElectronicGovernorApplications?????? Low-FrequencyAmplifier,ElectronicGovernorApplications Features •Lowcollector-to-emittersaturationvoltage. | SANYOSanyo Semicon Device 三洋三洋电机株式会社 | |||
High-CurrentDriverApplications? High-CurrentDriverApplications Features •AdoptionofFBET,MBITprocesses. •Lowcollector-to-emittervoltage. •LargecurrentcapacityandwideASO. •Fastswitchingspeed. Applications •Voltageregulators,relaydrivers.lampdrivers. | SANYOSanyo Semicon Device 三洋三洋电机株式会社 | |||
High-CurrentDriverApplications High-CurrentDriverApplications Features •AdoptionofFBET,MBITprocesses. •Lowcollector-to-emittervoltage. •LargecurrentcapacityandwideASO. •Fastswitchingspeed. Applications •Voltageregulators,relaydrivers.lampdrivers. | SANYOSanyo Semicon Device 三洋三洋电机株式会社 | |||
High-CurrentDriverApplications High-CurrentDriverApplications Features •AdoptionofFBET,MBITprocesses. •Lowcollector-to-emittervoltage. •LargecurrentcapacityandwideASO. •Fastswitchingspeed. Applications •Voltageregulators,relaydrivers.lampdrivers. | SANYOSanyo Semicon Device 三洋三洋电机株式会社 | |||
High-CurrentDriverApplications High-CurrentDriverApplications Features •AdoptionofFBET,MBITprocesses. •Lowcollector-to-emittervoltage. •LargecurrentcapacityandwideASO. •Fastswitchingspeed. Applications •Voltageregulators,relaydrivers.lampdrivers. | SANYOSanyo Semicon Device 三洋三洋电机株式会社 | |||
High-CurrentDriverApplications High-CurrentDriverApplications Features •AdoptionofFBET,MBITprocesses. •Lowcollector-to-emittervoltage. •LargecurrentcapacityandwideASO. •Fastswitchingspeed. Applications •Voltageregulators,relaydrivers.lampdrivers. | SANYOSanyo Semicon Device 三洋三洋电机株式会社 | |||
Low-FrequencyPowerAmpApplications Low-FrequencyPowerAmplifierApplications Features •AdoptionofFBETprocess •Fastswitchingspeed Applicaitons •Voltageregulators,relaydrivers,lampdrivers | SANYOSanyo Semicon Device 三洋三洋电机株式会社 | |||
BipolarTransistorAdoptionofFBETprocess Features •AdoptionofFBETprocess •Fastswitchingspeed Applicaitons •Voltageregulators,relaydrivers,lampdrivers | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | |||
BipolarTransistorAdoptionofFBETprocess Features •AdoptionofFBETprocess •Fastswitchingspeed Applicaitons •Voltageregulators,relaydrivers,lampdrivers | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | |||
BipolarTransistorAdoptionofFBETprocess Features •AdoptionofFBETprocess •Fastswitchingspeed Applicaitons •Voltageregulators,relaydrivers,lampdrivers | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | |||
BipolarTransistorAdoptionofFBET,MBITprocesses Features •AdoptionofFBET,MBITprocesses •LargecurrentcapacityandwideASO •Fastswitchingspeed Applicaitons •Voltageregulators,relaydrivers,lampdrivers | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | |||
High-CurrentSwitchingApplications High-CurrentSwitchingApplications Features •AdoptionofFBET,MBITprocesses •LargecurrentcapacityandwideASO •Fastswitchingspeed Applicaitons •Voltageregulators,relaydrivers,lampdrivers | SANYOSanyo Semicon Device 三洋三洋电机株式会社 | |||
BipolarTransistorAdoptionofFBET,MBITprocesses Features •AdoptionofFBET,MBITprocesses •LargecurrentcapacityandwideASO •Fastswitchingspeed Applicaitons •Voltageregulators,relaydrivers,lampdrivers | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | |||
BipolarTransistorAdoptionofFBET,MBITprocesses Features •AdoptionofFBET,MBITprocesses •LargecurrentcapacityandwideASO •Fastswitchingspeed Applicaitons •Voltageregulators,relaydrivers,lampdrivers | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | |||
High-CurrentSwitchingApplications High-CurrentSwitchingApplications Features •AdoptionofFBET,MBITprocesses •Lowcollector-to-emittersaturationvoltage •Largecurrentcapacity,wideASO •Fastswitchingspeed | SANYOSanyo Semicon Device 三洋三洋电机株式会社 | |||
High-VoltageSwitchingApplications PNP/NPNEpitaxialPlanarSiliconTransistors Features •AdoptionofFBET,MBITprocesses •Highbreakdownvoltage,largecurrentcapacity •Fastswitchingspeed | SANYOSanyo Semicon Device 三洋三洋电机株式会社 | |||
BipolarTransistorAdoptionofFBET,MBITprocesses Features •AdoptionofFBET,MBITprocesses •Highbreakdownvoltage,largecurrentcapacity •Fastswitchingspeed | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | |||
BipolarTransistor??0V,??A,LowVCE(sat)PNPSinglePCP Features •AdoptionofFBET,MBITprocesses •Highbreakdownvoltage,largecurrentcapacity •Fastswitchingspeed | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | |||
BipolarTransistor??0V,??A,LowVCE(sat)PNPSinglePCP Features •AdoptionofFBET,MBITprocesses •Highbreakdownvoltage,largecurrentcapacity •Fastswitchingspeed | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | |||
BipolarTransistorAdoptionofFBET,MBITprocesses Features •AdoptionofFBET,MBITprocesses •Highbreakdownvoltage,largecurrentcapacity •Fastswitchingspeed | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | |||
BipolarTransistorAdoptionofFBET,MBITprocesses Features •AdoptionofFBET,MBITprocesses •Highbreakdownvoltage,largecurrentcapacity •Fastswitchingspeed | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | |||
BipolarTransistor??0V,??A,LowVCE(sat)PNPSinglePCP Features •AdoptionofFBET,MBITprocesses •Highbreakdownvoltage,largecurrentcapacity •Fastswitchingspeed | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | |||
BipolarTransistorHighbreakdownvoltage,largecurrentcapacity BipolarTransistor(-)100V,(-)2A,LowVCE(sat),(PNP)NPNSingleNMP Features •AdoptionofFBET,MBITprocesses •Highbreakdownvoltage,largecurrentcapacity •Fastswitchingspeed | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | |||
High-VoltageSwitchingApplications High-VoltageSwitchingApplications Features •AdoptionofFBET,MBITprocesses •Highbreakdownvoltage,largecurrentcapacity •Fastswitchingspeed | SANYOSanyo Semicon Device 三洋三洋电机株式会社 | |||
BipolarTransistorHighbreakdownvoltage,largecurrentcapacity BipolarTransistor(-)100V,(-)2A,LowVCE(sat),(PNP)NPNSingleNMP Features •AdoptionofFBET,MBITprocesses •Highbreakdownvoltage,largecurrentcapacity •Fastswitchingspeed | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | |||
BipolarTransistorHighbreakdownvoltage,largecurrentcapacity BipolarTransistor(-)100V,(-)2A,LowVCE(sat),(PNP)NPNSingleNMP Features •AdoptionofFBET,MBITprocesses •Highbreakdownvoltage,largecurrentcapacity •Fastswitchingspeed | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | |||
High-DefinitionCRTDisplayVideoOutputApplications TransistorsforTVDisplayVideoOutputUse | SANYOSanyo Semicon Device 三洋三洋电机株式会社 | |||
TransistorsforTVDisplayVideoOutputUse TransistorsforTVDisplayVideoOutputUse | SANYOSanyo Semicon Device 三洋三洋电机株式会社 | |||
PNPSILICONEPITAXIALPOWERTRANSISTOR(DARLINGTONCONNECTION)FORHIGH-SPEEDSWITCHING PNPSILICONEPITAXIALPOWERTRANSISTOR(DARLINGTONCONNECTION)FORHIGH-SPEEDSWITCHING The2SA1714isahigh-speeddarlingtonpowertransistor.Thistransistorisidealforhigh-precisioncontrolsuchasPWMcontrolforpulsemortorsorblushlessmortorofOAandFAequipment. FEATURES •High | NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社 | |||
SILICONTRANSISTOR PNPSILICONEPITAXIALPOWERTRANSISTOR (DARLINGTONCONNECTION) FORHIGH-SPEEDSWITCHING The2SA1714isahigh-speeddarlingtonpowertransistor.This transistorisidealforhigh-precisioncontrolsuchasPWMcontrolfor pulsemortorsorblushlessmortorofOAandFAequipment. FEATURES H | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | |||
PNPSILICONEPITAXIALPOWERTRANSISTOR(DARLINGTONCONNECTION)FORHIGH-SPEEDSWITCHING PNPSILICONEPITAXIALPOWERTRANSISTOR(DARLINGTONCONNECTION)FORHIGH-SPEEDSWITCHING The2SA1714isahigh-speeddarlingtonpowertransistor.Thistransistorisidealforhigh-precisioncontrolsuchasPWMcontrolforpulsemortorsorblushlessmortorofOAandFAequipment. FEATURES •High | NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社 | |||
PNPSILICONEPITAXIALPOWERTRANSISTOR(DARLINGTONCONNECTION)FORHIGH-SPEEDSWITCHING PNPSILICONEPITAXIALPOWERTRANSISTOR(DARLINGTONCONNECTION)FORHIGH-SPEEDSWITCHING The2SA1714isahigh-speeddarlingtonpowertransistor.Thistransistorisidealforhigh-precisioncontrolsuchasPWMcontrolforpulsemortorsorblushlessmortorofOAandFAequipment. FEATURES •High | NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社 | |||
PNPSILICONEPITAXIALPOWERTRANSISTOR(DARLINGTONCONNECTION)FORHIGH-SPEEDSWITCHING PNPSILICONEPITAXIALPOWERTRANSISTOR(DARLINGTONCONNECTION)FORHIGH-SPEEDSWITCHING The2SA1714isahigh-speeddarlingtonpowertransistor.Thistransistorisidealforhigh-precisioncontrolsuchasPWMcontrolforpulsemortorsorblushlessmortorofOAandFAequipment. FEATURES •High | NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社 | |||
SiliconPNPPowerTransistors DESCRIPTION ·WithTO-220Fpackage ·HighDCcurrentgain. ·Lowcollectorsaturationvoltage. ·DARLINGTON APPLICATIONS ·Idealformotordrviersandsolenoiddriversapplication | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
SiliconPNPPowerTransistors DESCRIPTION ·WithTO-220Fpackage ·HighDCcurrentgain. ·Lowcollectorsaturationvoltage. ·DARLINGTON APPLICATIONS ·Idealformotordrviersandsolenoiddriversapplication | SAVANTIC Savantic, Inc. | |||
SiliconPNPPowerTransistors DESCRIPTION ·WithTO-220Fpackage ·HighDCcurrentgain. ·Lowcollectorsaturationvoltage. ·DARLINGTON APPLICATIONS ·Idealformotordrviersandsolenoiddriversapplication | JMNICQuanzhou Jinmei Electronic Co.,Ltd. 锦美电子泉州锦美电子有限公司 | |||
PNPSILICONEPITAXIALTRANSISTOR(DARLINGTONCONNECTION)FORHIGH-SPEEDSWITCHING PNPSILICONEPITAXIALTRANSISTOR(DARLINGTONCONNECTION) FORHIGH-SPEEDSWITCHING The2SA1720isahigh-speedDarlingtonpowertransistor. Thistransistorisidealforhigh-precisioncontrolsuchasPWMcontrolforpulsemotorsorbrushlessmotorsinOAandFAequipment. FEATURES •Moldpacka | NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社 | |||
DARLINGTONPOWERTRANSISTOR PNPSILICONEPITAXIALTRANSISTOR(DARLINGTONCONNECTION) FORHIGH-SPEEDSWITCHING The2SA1720isahigh-speedDarlingtonpowertransistor. Thistransistorisidealforhigh-precisioncontrolsuchasPWM controlforpulsemotorsorbrushlessmotorsinOAandFAequipment. FEATURES Moldpack | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | |||
TRANSISTOR(HIGHVOLTAGECONTROL,PLASMADISPLAY,NIXIETUBEDRIVER,CATHODERAYTUBEBRIGHTNESSCONTROLAPPLICATIONS HighVoltageControlApplications PlasmaDisplay,NixieTubeDriverApplications CathodeRayTubeBrightnessControlApplications •Highvoltage:VCBO=−300V,VCEO=−300V •Lowsaturationvoltage:VCE(sat)=−0.5V(max) •Smallcollectoroutputcapacitance:Cob=5.5pF(typ.) •Comple | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | |||
High-FrequencyAmp,Medium-PowerAmpApplications???? High-FrequencyAmplifier,Medium-PowerAmplifierApplications Features •HighfT(fT=1.5GHztyp). •Highcurrent(IC=300mA). •AdoptionofFBETprocess. Applications •Widebandamplifiers. •High-frequencydrivers. | SANYOSanyo Semicon Device 三洋三洋电机株式会社 | |||
High-DefinitionCRTDisplayVideoOutputDriverApplications? Features ·HighfT(fT=1.5GHztyp). ·Highcurrent(IC=300mA). ·AdoptionofFBETprocess. | SANYOSanyo Semicon Device 三洋三洋电机株式会社 | |||
VideoOutputDriverApplications Features •HighfT(fT=1.5GHztyp). •HighCurrent(IC=300mA). •AdoptionofFBETprocess. | KEXINGuangdong Kexin Industrial Co.,Ltd 科信电子广东科信实业有限公司 | |||
SiliconPNPPowerTransistors DESCRIPTION •WithTO-220Fpackage •Complementtotype2SC4511 APPLICATIONS •Audioandgeneralpurpose | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
SiliconPNPEpitaxialPlanarTransistor(AudioandGeneralPurpose) SiliconPNPEpitaxialPlanarTransistor(Complementtotype2SC4511) Application:AudioandGeneralPurpose | SankenSanken electric 三垦三垦电气株式会社 | |||
SiliconPNPPowerTransistors DESCRIPTION •WithTO-220Fpackage •Complementtotype2SC4511 APPLICATIONS •Audioandgeneralpurpose | JMNICQuanzhou Jinmei Electronic Co.,Ltd. 锦美电子泉州锦美电子有限公司 | |||
SiliconPNPPowerTransistors DESCRIPTION •WithTO-220Fpackage •Complementtotype2SC4511 APPLICATIONS •Audioandgeneralpurpose | SAVANTIC Savantic, Inc. |
2SA17产品属性
- 类型
描述
- 型号
2SA17
- 制造商
SANYO Semiconductor Co Ltd
IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
PANASONIC |
23+ |
SOT-23 |
63000 |
原装正品现货 |
|||
PANASONIC |
23+ |
SOT-323 |
7510 |
绝对全新原装!优势供货渠道!特价!请放心订购! |
|||
N/A |
23+ |
19138 |
原厂授权代理,海外优势订货渠道。可提供大量库存,详 |
||||
Panasonic |
1922+ |
SOT-23 |
35689 |
原装进口现货库存专业工厂研究所配单供货 |
|||
PANASONIC/松下 |
23+ |
SOT-23 |
50000 |
全新原装正品现货,支持订货 |
|||
Panasonic |
25+23+ |
Sot-23 |
33931 |
绝对原装正品全新进口深圳现货 |
|||
PANASONIC |
24+ |
SOT-23 |
56000 |
公司进口原装现货 批量特价支持 |
|||
PANASONIC |
21+ |
SOT-23 |
2424 |
原装现货假一赔十 |
|||
Panasonic/松下 |
24+ |
SOT-23 |
39500 |
新进库存/原装 |
|||
PANASONIC |
23+ |
PNP |
7750 |
全新原装优势 |
2SA17规格书下载地址
2SA17参数引脚图相关
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- P92
- P93
- P94
- P95
- P96
- P97