2SA1741晶体三极管说明书PDF资料批发采购价格-IC资料网

找IC，尽在114IC

登录注册

芯片资料

芯片资料
丝印反查
库存查询
行业新闻
制造商
替换型号
晶体管

精确

位置：首页 > IC中文资料 > 2SA17

2SA17晶体管资料

2SA17别名：2SA17三极管、2SA17晶体管、2SA17晶体三极管
2SA17生产厂家：日本日立公司
2SA17制作材料：Ge-PNP
2SA17性质：射频/高频放大（HF）_混频（M）_开关管（S）
2SA17封装形式：直插封装
2SA17极限工作电压：12V
2SA17最大电流允许值：0.015A
2SA17最大工作频率：19MHZ
2SA17引脚数：3
2SA17最大耗散功率：
2SA17放大倍数：
2SA17图片代号：C-47
2SA17vtest：12
2SA17htest：19000000
2SA17atest：0.015
2SA17wtest：0

2SA17代换 2SA17用什么型号代替：AF124,AF125,AF126,AF127,AF200,2N3323,2N3324,2N3325,2SA102,2SA100,3AG54A,

2SA17价格

参考价格：￥0.8004

型号：2SA1705S-AN 品牌：ON 备注：这里有2SA17多少钱，2026年最近7天走势，今日出价，今日竞价，2SA17批发/采购报价，2SA17行情走势销售排行榜，2SA17报价。

型号	功能描述	生产厂家企业	LOGO
2SA1700	High-Voltage Driver Applications High-Voltage Driver Applications Features • High breakdown voltage. • Adoption of MBIT process. • Excellent hFE linearity.	SANYO 三洋	SANYO
2SA1700	HIGH VOLTAGE DRIVER APPLICATION HIGH VOLTAGE DRIVER APPLICATION ■ FEATURES * High breakdown voltage. * Excellent hFE linearity.	UTC 友顺	UTC
2SA1700	PNP Epitaxial Planar Silicon Transistor FEATURES ● High breakdown voltage. ● Adoption of MBIT process. ● Excellent hFE linearity.	BILIN 银河微电	BILIN
2SA1700	isc Silicon PNP Power Transistor DESCRIPTION • High breakdown voltage • Low Collector-Emitter Saturation Voltage • High Power Dissipation- : PC= 10W@TC=25℃ ,PC= 10W@Ta=25℃ • Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS • For high voltage driver applications.	ISC 无锡固电	ISC
2SA1700	Silicon PNP Power Transistor DESCRIPTION ·High breakdown voltage ·Low Collector-Emitter Saturation Voltage ·High Power Dissipation- : PC= 10W@TC=25℃,PC= 10W@Ta=25℃ ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·For high voltage driver applications.	ISC 无锡固电	ISC
2SA1700	Silicon PNP Power Transistor DESCRIPTION ·High breakdown voltage ·Low Collector-Emitter Saturation Voltage ·High Power Dissipation- : PC= 10W@TC=25℃,PC= 10W@Ta=25℃ ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·For high voltage driver applications.	ISC 无锡固电	ISC
2SA1700	TO-251-3L Plastic-Encapsulate Transistors TRANSISTOR (PNP) FEATURES ● High Breakdown Voltage ● Adoption of MBIT Process ● Excellent hFE Linearity	JIANGSU 长电科技	JIANGSU
2SA1700	TRANSISTOR (NPN) TRANSISTOR (NPN) FEATURES Power dissipation PCM : 1 W (Tamb=25℃) Collector current ICM : -200 mA Collector-base voltage V(BR)CBO : -400 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃	WINNERJOIN 永而佳	WINNERJOIN
2SA1700	Silicon PNP transistor in a TO-252 Plastic Package. Descriptions Silicon PNP transistor in a TO-252 Plastic Package. Features High breakdown voltage, adoption of MBIT process excellent hFE linearity Applications High voltage driver applications.	FOSHAN 蓝箭电子	FOSHAN
2SA1700	Plastic-Encapsulated Transistors TRANSISTOR (NPN) FEATURES Power dissipation PCM : 1 W (Tamb=25℃) Collector current ICM : -200 mA Collector-base voltage V(BR)CBO : -400 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃	TEL	TEL
2SA1700-251	Silicon PNP Power Transistor DESCRIPTION ·High breakdown voltage ·Low Collector-Emitter Saturation Voltage ·High Power Dissipation- : PC= 10W@TC=25℃,PC= 10W@Ta=25℃ ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·For high voltage driver applications.	ISC 无锡固电	ISC
2SA1700-252	Silicon PNP Power Transistor DESCRIPTION ·High breakdown voltage ·Low Collector-Emitter Saturation Voltage ·High Power Dissipation- : PC= 10W@TC=25℃,PC= 10W@Ta=25℃ ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·For high voltage driver applications.	ISC 无锡固电	ISC
2SA1701	Low-Frequency General-Purpose Amp Applications???? Low-Frequency General-Purpose Amplifier Applications Features • Large current capacity. • Low collector-to-emitter saturation voltage. Applications • AF power amplifier, medium-speed switching, small-sized motor driver applications.	SANYO 三洋	SANYO
2SA1702	High-Current Switching Applications High-Current Switching Applications Features • Adoption of FBET, MBIT processes. • Low saturation votlage. • Large current capacity. • Fast switching speed.	SANYO 三洋	SANYO
2SA1703	Low-Frequency Amp, Electronic Governor Applications?????? Low-Frequency Amplifier, Electronic Governor Applications Features • Low collector-to-emitter saturation voltage.	SANYO 三洋	SANYO
2SA1704	High-Current Driver Applications High-Current Driver Applications Features • Adoption of FBET, MBIT processes. • Low collector-to-emitter voltage. • Large current capacity and wide ASO. • Fast switching speed. Applications • Voltage regulators, relay drivers. lamp drivers.	SANYO 三洋	SANYO
2SA1704	High-Current Driver Applications? High-Current Driver Applications Features • Adoption of FBET, MBIT processes. • Low collector-to-emitter voltage. • Large current capacity and wide ASO. • Fast switching speed. Applications • Voltage regulators, relay drivers. lamp drivers.	SANYO 三洋	SANYO
2SA1704R	High-Current Driver Applications High-Current Driver Applications Features • Adoption of FBET, MBIT processes. • Low collector-to-emitter voltage. • Large current capacity and wide ASO. • Fast switching speed. Applications • Voltage regulators, relay drivers. lamp drivers.	SANYO 三洋	SANYO
2SA1704S	High-Current Driver Applications High-Current Driver Applications Features • Adoption of FBET, MBIT processes. • Low collector-to-emitter voltage. • Large current capacity and wide ASO. • Fast switching speed. Applications • Voltage regulators, relay drivers. lamp drivers.	SANYO 三洋	SANYO
2SA1704T	High-Current Driver Applications High-Current Driver Applications Features • Adoption of FBET, MBIT processes. • Low collector-to-emitter voltage. • Large current capacity and wide ASO. • Fast switching speed. Applications • Voltage regulators, relay drivers. lamp drivers.	SANYO 三洋	SANYO
2SA1705	Low-Frequency Power Amp Applications Low-Frequency Power Amplifier Applications Features • Adoption of FBET process • Fast switching speed Applicaitons • Voltage regulators, relay drivers, lamp drivers	SANYO 三洋	SANYO
2SA1705	Bipolar Transistor Adoption of FBET process Features • Adoption of FBET process • Fast switching speed Applicaitons • Voltage regulators, relay drivers, lamp drivers	ONSEMI 安森美半导体	ONSEMI
2SA1705S-AN	Bipolar Transistor Adoption of FBET process Features • Adoption of FBET process • Fast switching speed Applicaitons • Voltage regulators, relay drivers, lamp drivers	ONSEMI 安森美半导体	ONSEMI
2SA1705T-AN	Bipolar Transistor Adoption of FBET process Features • Adoption of FBET process • Fast switching speed Applicaitons • Voltage regulators, relay drivers, lamp drivers	ONSEMI 安森美半导体	ONSEMI
2SA1706	Bipolar Transistor Adoption of FBET, MBIT processes Features • Adoption of FBET, MBIT processes • Large current capacity and wide ASO • Fast switching speed Applicaitons • Voltage regulators, relay drivers, lamp drivers	ONSEMI 安森美半导体	ONSEMI
2SA1706	High-Current Switching Applications High-Current Switching Applications Features • Adoption of FBET, MBIT processes • Large current capacity and wide ASO • Fast switching speed Applicaitons • Voltage regulators, relay drivers, lamp drivers	SANYO 三洋	SANYO
2SA1706S-AN	Bipolar Transistor Adoption of FBET, MBIT processes Features • Adoption of FBET, MBIT processes • Large current capacity and wide ASO • Fast switching speed Applicaitons • Voltage regulators, relay drivers, lamp drivers	ONSEMI 安森美半导体	ONSEMI
2SA1706T-AN	Bipolar Transistor Adoption of FBET, MBIT processes Features • Adoption of FBET, MBIT processes • Large current capacity and wide ASO • Fast switching speed Applicaitons • Voltage regulators, relay drivers, lamp drivers	ONSEMI 安森美半导体	ONSEMI
2SA1707	High-Current Switching Applications High-Current Switching Applications Features • Adoption of FBET, MBIT processes • Low collector-to-emitter saturation voltage • Large current capacity, wide ASO • Fast switching speed	SANYO 三洋	SANYO
2SA1708	Bipolar Transistor Adoption of FBET, MBIT processes Features • Adoption of FBET, MBIT processes • High breakdown voltage, large current capacity • Fast switching speed	ONSEMI 安森美半导体	ONSEMI
2SA1708	High-Voltage Switching Applications PNP / NPN Epitaxial Planar Silicon Transistors Features • Adoption of FBET, MBIT processes • High breakdown voltage, large current capacity • Fast switching speed	SANYO 三洋	SANYO
2SA1708	Bipolar Transistor ??0V, ??A, Low VCE(sat) PNP Single PCP Features • Adoption of FBET, MBIT processes • High breakdown voltage, large current capacity • Fast switching speed	ONSEMI 安森美半导体	ONSEMI
2SA1708S-AN	Bipolar Transistor Adoption of FBET, MBIT processes Features • Adoption of FBET, MBIT processes • High breakdown voltage, large current capacity • Fast switching speed	ONSEMI 安森美半导体	ONSEMI
2SA1708S-AN	Bipolar Transistor ??0V, ??A, Low VCE(sat) PNP Single PCP Features • Adoption of FBET, MBIT processes • High breakdown voltage, large current capacity • Fast switching speed	ONSEMI 安森美半导体	ONSEMI
2SA1708T-AN	Bipolar Transistor ??0V, ??A, Low VCE(sat) PNP Single PCP Features • Adoption of FBET, MBIT processes • High breakdown voltage, large current capacity • Fast switching speed	ONSEMI 安森美半导体	ONSEMI
2SA1708T-AN	Bipolar Transistor Adoption of FBET, MBIT processes Features • Adoption of FBET, MBIT processes • High breakdown voltage, large current capacity • Fast switching speed	ONSEMI 安森美半导体	ONSEMI
2SA1709	Bipolar Transistor High breakdown voltage, large current capacity Bipolar Transistor (-)100V, (-)2A, Low VCE(sat), (PNP)NPN Single NMP Features • Adoption of FBET, MBIT processes • High breakdown voltage, large current capacity • Fast switching speed	ONSEMI 安森美半导体	ONSEMI
2SA1709	High-Voltage Switching Applications High-Voltage Switching Applications Features • Adoption of FBET, MBIT processes • High breakdown voltage, large current capacity • Fast switching speed	SANYO 三洋	SANYO
2SA1709S-AN	Bipolar Transistor High breakdown voltage, large current capacity Bipolar Transistor (-)100V, (-)2A, Low VCE(sat), (PNP)NPN Single NMP Features • Adoption of FBET, MBIT processes • High breakdown voltage, large current capacity • Fast switching speed	ONSEMI 安森美半导体	ONSEMI
2SA1709T-AN	Bipolar Transistor High breakdown voltage, large current capacity Bipolar Transistor (-)100V, (-)2A, Low VCE(sat), (PNP)NPN Single NMP Features • Adoption of FBET, MBIT processes • High breakdown voltage, large current capacity • Fast switching speed	ONSEMI 安森美半导体	ONSEMI
2SA1710	High-Definition CRT Display Video Output Applications Transistors for TV Display Video Output Use	SANYO 三洋	SANYO
2SA1710	Transistors for TV Display Video Output Use Transistors for TV Display Video Output Use	SANYO 三洋	SANYO
2SA1714	PNP SILICON EPITAXIAL POWER TRANSISTOR (DARLINGTON CONNECTION) FOR HIGH-SPEED SWITCHING PNP SILICON EPITAXIAL POWER TRANSISTOR (DARLINGTON CONNECTION) FOR HIGH-SPEED SWITCHING The 2SA1714 is a high-speed darlington power transistor. This transistor is ideal for high-precision control such as PWM control for pulse mortors or blushless mortor of OA and FA equipment. FEATURES • High	NEC 瑞萨	NEC
2SA1714	丝印代码：HFE1；SILICON TRANSISTOR PNP SILICON EPITAXIAL POWER TRANSISTOR (DARLINGTON CONNECTION) FOR HIGH-SPEED SWITCHING The 2SA1714 is a high-speed darlington power transistor. This transistor is ideal for high-precision control such as PWM control for pulse mortors or blushless mortor of OA and FA equipment. FEATURES H	RENESAS 瑞萨	RENESAS
2SA1714K	PNP SILICON EPITAXIAL POWER TRANSISTOR (DARLINGTON CONNECTION) FOR HIGH-SPEED SWITCHING PNP SILICON EPITAXIAL POWER TRANSISTOR (DARLINGTON CONNECTION) FOR HIGH-SPEED SWITCHING The 2SA1714 is a high-speed darlington power transistor. This transistor is ideal for high-precision control such as PWM control for pulse mortors or blushless mortor of OA and FA equipment. FEATURES • High	NEC 瑞萨	NEC
2SA1714L	PNP SILICON EPITAXIAL POWER TRANSISTOR (DARLINGTON CONNECTION) FOR HIGH-SPEED SWITCHING PNP SILICON EPITAXIAL POWER TRANSISTOR (DARLINGTON CONNECTION) FOR HIGH-SPEED SWITCHING The 2SA1714 is a high-speed darlington power transistor. This transistor is ideal for high-precision control such as PWM control for pulse mortors or blushless mortor of OA and FA equipment. FEATURES • High	NEC 瑞萨	NEC
2SA1714M	PNP SILICON EPITAXIAL POWER TRANSISTOR (DARLINGTON CONNECTION) FOR HIGH-SPEED SWITCHING PNP SILICON EPITAXIAL POWER TRANSISTOR (DARLINGTON CONNECTION) FOR HIGH-SPEED SWITCHING The 2SA1714 is a high-speed darlington power transistor. This transistor is ideal for high-precision control such as PWM control for pulse mortors or blushless mortor of OA and FA equipment. FEATURES • High	NEC 瑞萨	NEC
2SA1718	Silicon PNP Power Transistors DESCRIPTION ·With TO-220F package ·High DC current gain. ·Low collector saturation voltage. ·DARLINGTON APPLICATIONS ·Ideal for motor drviers and solenoid drivers application	JMNIC 锦美电子	JMNIC
2SA1718	Silicon PNP Power Transistors DESCRIPTION ·With TO-220F package ·High DC current gain. ·Low collector saturation voltage. ·DARLINGTON APPLICATIONS ·Ideal for motor drviers and solenoid drivers application	ISC 无锡固电	ISC
2SA1718	Silicon PNP Power Transistors DESCRIPTION ·With TO-220F package ·High DC current gain. ·Low collector saturation voltage. ·DARLINGTON APPLICATIONS ·Ideal for motor drviers and solenoid drivers application	SAVANTIC	SAVANTIC
2SA1720	PNP SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION) FOR HIGH-SPEED SWITCHING PNP SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION) FOR HIGH-SPEED SWITCHING The 2SA1720 is a high-speed Darlington power transistor. This transistor is ideal for high-precision control such as PWM control for pulse motors or brushless motors in OA and FA equipment. FEATURES • Mold packa	NEC 瑞萨	NEC
2SA1720	丝印代码：HFE1；DARLINGTON POWER TRANSISTOR PNP SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION) FOR HIGH-SPEED SWITCHING The 2SA1720 is a high-speed Darlington power transistor. This transistor is ideal for high-precision control such as PWM control for pulse motors or brushless motors in OA and FA equipment. FEATURES Mold pack	RENESAS 瑞萨	RENESAS
2SA1721	TRANSISTOR (HIGH VOLTAGE CONTROL, PLASMA DISPLAY, NIXIE TUBE DRIVER, CATHODE RAY TUBE BRIGHTNESS CONTROL APPLICATIONS High Voltage Control Applications Plasma Display, Nixie Tube Driver Applications Cathode Ray Tube Brightness Control Applications • High voltage: VCBO = −300 V, VCEO = −300 V • Low saturation voltage: VCE (sat) = −0.5 V (max) • Small collector output capacitance: Cob = 5.5 pF (typ.) • Comple	TOSHIBA 东芝	TOSHIBA
2SA1723	High-Frequency Amp, Medium-Power Amp Applications???? High-Frequency Amplifier, Medium-Power Amplifier Applications Features • High fT (fT=1.5GHz typ). • High current (IC=300mA). • Adoption of FBET process. Applications • Wideband amplifiers. • High-frequency drivers.	SANYO 三洋	SANYO
2SA1724	High-Definition CRT Display Video Output Driver Applications? Features · High fT (fT=1.5GHz typ). · High current (IC=300mA). · Adoption of FBET process.	SANYO 三洋	SANYO
2SA1724	Video Output Driver Applications Features • High fT (fT = 1.5GHz typ). • High Current (IC = 300mA). • Adoption of FBET process.	KEXIN 科信电子	KEXIN
2SA1725	Silicon PNP Power Transistors DESCRIPTION • With TO-220F package • Complement to type 2SC4511 APPLICATIONS • Audio and general purpose	ISC 无锡固电	ISC
2SA1725	Silicon PNP Power Transistors DESCRIPTION • With TO-220F package • Complement to type 2SC4511 APPLICATIONS • Audio and general purpose	JMNIC 锦美电子	JMNIC
2SA1725	Silicon PNP Power Transistors DESCRIPTION • With TO-220F package • Complement to type 2SC4511 APPLICATIONS • Audio and general purpose	SAVANTIC	SAVANTIC
2SA1725	Silicon PNP Epitaxial Planar Transistor(Audio and General Purpose) Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC4511) Application : Audio and General Purpose	SANKEN 三垦	SANKEN

2SA17产品属性

类型
描述
NPN/PNP：
PNP
Vcbo (V)：
-100
VCEO (V)：
-100
Vebo (V)：
-8
汽车业：
YES
IC (A) @25 °C：
-3
VCE (sat)(V) 最大值：
-1.2
hFE最小值：
2000
hFE最大值：
20000
Pc (W)：
0
封装类型：
MP-5

2SA17供应商更多...

更新时间：2026-5-14 18:40:00

IC供应商	芯片型号	品牌	批号	封装	库存	备注	价格
深圳市正纳电子有限公司	2SA1741	RENESAS		TO220F	30000000	原装进口中国百强元器件分销企业专注RENESAS十年公司大量RENESAS现货欢迎您的咨询百年不变服务至上	询价
深圳市昌和盛利电子有限公司	2SA1742	NEC	26+	原厂封装	9526	代理全系列销售,全新原装正品,价格优势,长期供应,量大可订	询价
深圳市豪迈兴电子有限公司	2SA1741	NEC	24+		8858	公司原厂原装现货假一罚十!特价出售!强势库存!	询价
深圳市振宏微科技有限公司	2SA1741(0)AZ	NEC	23+	NA	1231	专做原装正品,假一罚百!	询价
深圳诚思涵科技有限公司	2SA1742	NEC	17+	TO-220F	60000	保证进口原装可开17%增值税发票	询价
深圳市一线半导体有限公司	2SA1741-M	TOSHIBA	24+		90000		询价
深圳市向鸿伟业电子有限公司	2SA1742	SPTECH质超	2407+	TO-220F	30098	全新原装!仓库现货,大胆开价!	询价
上海金庆电子技术有限公司	2SA1741-AZ	RENESAS	12+13+	TO-220F	1325	全新发货1-2天	询价
深圳市东来宝电子科技有限公司	2SA1741IC	NEC	24+	TO-220F	43200	郑重承诺只做原装进口现货	询价
深圳市盈慧通电子有限公司	2SA1742A1742	RENESAS	2511	TO-220F	323	电子元器件采购降本30%!原厂直采,砍掉中间差价	询价

2SA17芯片相关品牌

2SA17规格书下载地址

2SA17参数引脚图相关

2SA17数据表相关新闻

2SA1037-R-TP
进口代理
2024-11-1
2SA1037AKT146Q
2SA1037AKT146Q
2023-5-26
2SA1930Q现货销售，欢迎来电咨询~
2SP0115T2C0-12
2022-4-15
2SA812-T1B-A/S6 原装正品现货
支持实单价格优势有单必成
2022-3-30
2SA2198
2SA2198，全新原装当天发货或门市自取0755-82732291.
2020-4-24
2SA1036KT146R一级代理进口原装现货尽在-宇集芯电子
2SA1036K T146R 2SA1036KT146R
2019-5-9

DdatasheetPDF页码索引

P1
P2
P3
P4
P5
P6
P7
P8
P9
P10
P11
P12
P13
P14
P15
P16
P17
P18
P19
P20
P21
P22
P23
P24
P25
P26
P27
P28
P29
P30
P31
P32
P33
P34
P35
P36
P37
P38
P39
P40
P41
P42
P43
P44
P45
P46
P47
P48
P49
P50
P51
P52
P53
P54
P55
P56
P57
P58
P59
P60
P61
P62
P63
P64
P65
P66
P67
P68
P69
P70
P71
P72
P73
P74
P75
P76
P77
P78
P79
P80
P81
P82
P83
P84
P85
P86
P87
P88
P89
P90
P91
P92
P93
P94
P95
P96
P97
P98
P99
P100
P101
P102
P103
P104
P105
P106
P107
P108
P109

找IC，尽在114IC

2SA17晶体管资料

2SA17价格

2SA17产品属性

2SA17供应商更多...

2SA17芯片相关品牌

2SA17规格书下载地址

2SA17参数引脚图相关

2SA17数据表相关新闻

2SA1037-R-TP

2SA1037AKT146Q

2SA1930Q现货销售，欢迎来电咨询~

2SA812-T1B-A/S6 原装正品现货

2SA2198

2SA1036KT146R一级代理进口原装现货尽在-宇集芯电子

DdatasheetPDF页码索引