High-Voltage Driver Applications

High-Voltage Driver Applications Features • High breakdown voltage. • Adoption of MBIT process. • Excellent hFE linearity.

HIGH VOLTAGE DRIVER APPLICATION

HIGH VOLTAGE DRIVER APPLICATION ■ FEATURES * High breakdown voltage. * Excellent hFE linearity.

Plastic-Encapsulated Transistors

TRANSISTOR (NPN) FEATURES Power dissipation PCM : 1 W (Tamb=25℃) Collector current ICM : -200 mA Collector-base voltage V(BR)CBO : -400 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃

TRANSISTOR (NPN)

TRANSISTOR (NPN) FEATURES Power dissipation PCM : 1 W (Tamb=25℃) Collector current ICM : -200 mA Collector-base voltage V(BR)CBO : -400 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃

Silicon PNP transistor in a TO-252 Plastic Package.

Descriptions Silicon PNP transistor in a TO-252 Plastic Package. Features High breakdown voltage, adoption of MBIT process excellent hFE linearity Applications High voltage driver applications.

TO-251-3L Plastic-Encapsulate Transistors

TRANSISTOR (PNP) FEATURES ● High Breakdown Voltage ● Adoption of MBIT Process ● Excellent hFE Linearity

isc Silicon PNP Power Transistor

DESCRIPTION • High breakdown voltage • Low Collector-Emitter Saturation Voltage • High Power Dissipation- : PC= 10W@TC=25℃ ,PC= 10W@Ta=25℃ • Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS • For high voltage driver applications.

PNP Epitaxial Planar Silicon Transistor

FEATURES ● High breakdown voltage. ● Adoption of MBIT process. ● Excellent hFE linearity.

Silicon PNP Power Transistor

DESCRIPTION ·High breakdown voltage ·Low Collector-Emitter Saturation Voltage ·High Power Dissipation- : PC= 10W@TC=25℃,PC= 10W@Ta=25℃ ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·For high voltage driver applications.

Silicon PNP Power Transistor

DESCRIPTION ·High breakdown voltage ·Low Collector-Emitter Saturation Voltage ·High Power Dissipation- : PC= 10W@TC=25℃,PC= 10W@Ta=25℃ ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·For high voltage driver applications.

Silicon PNP Power Transistor

DESCRIPTION ·High breakdown voltage ·Low Collector-Emitter Saturation Voltage ·High Power Dissipation- : PC= 10W@TC=25℃,PC= 10W@Ta=25℃ ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·For high voltage driver applications.

Silicon PNP Power Transistor

DESCRIPTION ·High breakdown voltage ·Low Collector-Emitter Saturation Voltage ·High Power Dissipation- : PC= 10W@TC=25℃,PC= 10W@Ta=25℃ ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·For high voltage driver applications.

Low-Frequency General-Purpose Amp Applications????

Low-Frequency General-Purpose Amplifier Applications Features • Large current capacity. • Low collector-to-emitter saturation voltage. Applications • AF power amplifier, medium-speed switching, small-sized motor driver applications.

High-Current Switching Applications

High-Current Switching Applications Features • Adoption of FBET, MBIT processes. • Low saturation votlage. • Large current capacity. • Fast switching speed.

Low-Frequency Amp, Electronic Governor Applications??????

Low-Frequency Amplifier, Electronic Governor Applications Features • Low collector-to-emitter saturation voltage.

High-Current Driver Applications?

High-Current Driver Applications Features • Adoption of FBET, MBIT processes. • Low collector-to-emitter voltage. • Large current capacity and wide ASO. • Fast switching speed. Applications • Voltage regulators, relay drivers. lamp drivers.

High-Current Driver Applications

High-Current Driver Applications Features • Adoption of FBET, MBIT processes. • Low collector-to-emitter voltage. • Large current capacity and wide ASO. • Fast switching speed. Applications • Voltage regulators, relay drivers. lamp drivers.

High-Current Driver Applications

High-Current Driver Applications Features • Adoption of FBET, MBIT processes. • Low collector-to-emitter voltage. • Large current capacity and wide ASO. • Fast switching speed. Applications • Voltage regulators, relay drivers. lamp drivers.

High-Current Driver Applications

High-Current Driver Applications Features • Adoption of FBET, MBIT processes. • Low collector-to-emitter voltage. • Large current capacity and wide ASO. • Fast switching speed. Applications • Voltage regulators, relay drivers. lamp drivers.

High-Current Driver Applications

High-Current Driver Applications Features • Adoption of FBET, MBIT processes. • Low collector-to-emitter voltage. • Large current capacity and wide ASO. • Fast switching speed. Applications • Voltage regulators, relay drivers. lamp drivers.

Low-Frequency Power Amp Applications

Low-Frequency Power Amplifier Applications Features • Adoption of FBET process • Fast switching speed Applicaitons • Voltage regulators, relay drivers, lamp drivers

Bipolar Transistor Adoption of FBET process

Features • Adoption of FBET process • Fast switching speed Applicaitons • Voltage regulators, relay drivers, lamp drivers

Bipolar Transistor Adoption of FBET process

Features • Adoption of FBET process • Fast switching speed Applicaitons • Voltage regulators, relay drivers, lamp drivers

Bipolar Transistor Adoption of FBET process

Features • Adoption of FBET process • Fast switching speed Applicaitons • Voltage regulators, relay drivers, lamp drivers

Bipolar Transistor Adoption of FBET, MBIT processes

Features • Adoption of FBET, MBIT processes • Large current capacity and wide ASO • Fast switching speed Applicaitons • Voltage regulators, relay drivers, lamp drivers

High-Current Switching Applications

High-Current Switching Applications Features • Adoption of FBET, MBIT processes • Large current capacity and wide ASO • Fast switching speed Applicaitons • Voltage regulators, relay drivers, lamp drivers

Bipolar Transistor Adoption of FBET, MBIT processes

Features • Adoption of FBET, MBIT processes • Large current capacity and wide ASO • Fast switching speed Applicaitons • Voltage regulators, relay drivers, lamp drivers

Bipolar Transistor Adoption of FBET, MBIT processes

Features • Adoption of FBET, MBIT processes • Large current capacity and wide ASO • Fast switching speed Applicaitons • Voltage regulators, relay drivers, lamp drivers

High-Current Switching Applications

High-Current Switching Applications Features • Adoption of FBET, MBIT processes • Low collector-to-emitter saturation voltage • Large current capacity, wide ASO • Fast switching speed

High-Voltage Switching Applications

PNP / NPN Epitaxial Planar Silicon Transistors Features • Adoption of FBET, MBIT processes • High breakdown voltage, large current capacity • Fast switching speed

Bipolar Transistor Adoption of FBET, MBIT processes

Features • Adoption of FBET, MBIT processes • High breakdown voltage, large current capacity • Fast switching speed

Bipolar Transistor ??0V, ??A, Low VCE(sat) PNP Single PCP

Features • Adoption of FBET, MBIT processes • High breakdown voltage, large current capacity • Fast switching speed

Bipolar Transistor ??0V, ??A, Low VCE(sat) PNP Single PCP

Features • Adoption of FBET, MBIT processes • High breakdown voltage, large current capacity • Fast switching speed

Bipolar Transistor Adoption of FBET, MBIT processes

Features • Adoption of FBET, MBIT processes • High breakdown voltage, large current capacity • Fast switching speed

Bipolar Transistor Adoption of FBET, MBIT processes

Features • Adoption of FBET, MBIT processes • High breakdown voltage, large current capacity • Fast switching speed

Bipolar Transistor ??0V, ??A, Low VCE(sat) PNP Single PCP

Features • Adoption of FBET, MBIT processes • High breakdown voltage, large current capacity • Fast switching speed

Bipolar Transistor High breakdown voltage, large current capacity

Bipolar Transistor (-)100V, (-)2A, Low VCE(sat), (PNP)NPN Single NMP Features • Adoption of FBET, MBIT processes • High breakdown voltage, large current capacity • Fast switching speed

High-Voltage Switching Applications

High-Voltage Switching Applications Features • Adoption of FBET, MBIT processes • High breakdown voltage, large current capacity • Fast switching speed

Bipolar Transistor High breakdown voltage, large current capacity

Bipolar Transistor (-)100V, (-)2A, Low VCE(sat), (PNP)NPN Single NMP Features • Adoption of FBET, MBIT processes • High breakdown voltage, large current capacity • Fast switching speed

Bipolar Transistor High breakdown voltage, large current capacity

Bipolar Transistor (-)100V, (-)2A, Low VCE(sat), (PNP)NPN Single NMP Features • Adoption of FBET, MBIT processes • High breakdown voltage, large current capacity • Fast switching speed

High-Definition CRT Display Video Output Applications

Transistors for TV Display Video Output Use

Transistors for TV Display Video Output Use

Transistors for TV Display Video Output Use

PNP SILICON EPITAXIAL POWER TRANSISTOR (DARLINGTON CONNECTION) FOR HIGH-SPEED SWITCHING

PNP SILICON EPITAXIAL POWER TRANSISTOR (DARLINGTON CONNECTION) FOR HIGH-SPEED SWITCHING The 2SA1714 is a high-speed darlington power transistor. This transistor is ideal for high-precision control such as PWM control for pulse mortors or blushless mortor of OA and FA equipment. FEATURES • High

SILICON TRANSISTOR

PNP SILICON EPITAXIAL POWER TRANSISTOR (DARLINGTON CONNECTION) FOR HIGH-SPEED SWITCHING The 2SA1714 is a high-speed darlington power transistor. This transistor is ideal for high-precision control such as PWM control for pulse mortors or blushless mortor of OA and FA equipment. FEATURES H

PNP SILICON EPITAXIAL POWER TRANSISTOR (DARLINGTON CONNECTION) FOR HIGH-SPEED SWITCHING

PNP SILICON EPITAXIAL POWER TRANSISTOR (DARLINGTON CONNECTION) FOR HIGH-SPEED SWITCHING The 2SA1714 is a high-speed darlington power transistor. This transistor is ideal for high-precision control such as PWM control for pulse mortors or blushless mortor of OA and FA equipment. FEATURES • High

PNP SILICON EPITAXIAL POWER TRANSISTOR (DARLINGTON CONNECTION) FOR HIGH-SPEED SWITCHING

PNP SILICON EPITAXIAL POWER TRANSISTOR (DARLINGTON CONNECTION) FOR HIGH-SPEED SWITCHING The 2SA1714 is a high-speed darlington power transistor. This transistor is ideal for high-precision control such as PWM control for pulse mortors or blushless mortor of OA and FA equipment. FEATURES • High

PNP SILICON EPITAXIAL POWER TRANSISTOR (DARLINGTON CONNECTION) FOR HIGH-SPEED SWITCHING

PNP SILICON EPITAXIAL POWER TRANSISTOR (DARLINGTON CONNECTION) FOR HIGH-SPEED SWITCHING The 2SA1714 is a high-speed darlington power transistor. This transistor is ideal for high-precision control such as PWM control for pulse mortors or blushless mortor of OA and FA equipment. FEATURES • High

Silicon PNP Power Transistors

DESCRIPTION ·With TO-220F package ·High DC current gain. ·Low collector saturation voltage. ·DARLINGTON APPLICATIONS ·Ideal for motor drviers and solenoid drivers application

Silicon PNP Power Transistors

DESCRIPTION ·With TO-220F package ·High DC current gain. ·Low collector saturation voltage. ·DARLINGTON APPLICATIONS ·Ideal for motor drviers and solenoid drivers application

Silicon PNP Power Transistors

DESCRIPTION ·With TO-220F package ·High DC current gain. ·Low collector saturation voltage. ·DARLINGTON APPLICATIONS ·Ideal for motor drviers and solenoid drivers application

PNP SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION) FOR HIGH-SPEED SWITCHING

PNP SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION) FOR HIGH-SPEED SWITCHING The 2SA1720 is a high-speed Darlington power transistor. This transistor is ideal for high-precision control such as PWM control for pulse motors or brushless motors in OA and FA equipment. FEATURES • Mold packa

DARLINGTON POWER TRANSISTOR

PNP SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION) FOR HIGH-SPEED SWITCHING The 2SA1720 is a high-speed Darlington power transistor. This transistor is ideal for high-precision control such as PWM control for pulse motors or brushless motors in OA and FA equipment. FEATURES Mold pack

TRANSISTOR (HIGH VOLTAGE CONTROL, PLASMA DISPLAY, NIXIE TUBE DRIVER, CATHODE RAY TUBE BRIGHTNESS CONTROL APPLICATIONS

High Voltage Control Applications Plasma Display, Nixie Tube Driver Applications Cathode Ray Tube Brightness Control Applications • High voltage: VCBO = −300 V, VCEO = −300 V • Low saturation voltage: VCE (sat) = −0.5 V (max) • Small collector output capacitance: Cob = 5.5 pF (typ.) • Comple

High-Frequency Amp, Medium-Power Amp Applications????

High-Frequency Amplifier, Medium-Power Amplifier Applications Features • High fT (fT=1.5GHz typ). • High current (IC=300mA). • Adoption of FBET process. Applications • Wideband amplifiers. • High-frequency drivers.

High-Definition CRT Display Video Output Driver Applications?

Features · High fT (fT=1.5GHz typ). · High current (IC=300mA). · Adoption of FBET process.

Video Output Driver Applications

Features • High fT (fT = 1.5GHz typ). • High Current (IC = 300mA). • Adoption of FBET process.

Silicon PNP Power Transistors

DESCRIPTION • With TO-220F package • Complement to type 2SC4511 APPLICATIONS • Audio and general purpose

Silicon PNP Epitaxial Planar Transistor(Audio and General Purpose)

Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC4511) Application : Audio and General Purpose

Silicon PNP Power Transistors

DESCRIPTION • With TO-220F package • Complement to type 2SC4511 APPLICATIONS • Audio and general purpose

Silicon PNP Power Transistors

DESCRIPTION • With TO-220F package • Complement to type 2SC4511 APPLICATIONS • Audio and general purpose