2SA160晶体管资料
2SA160别名：2SA160三极管、2SA160晶体管、2SA160晶体三极管
2SA160生产厂家：日本日电公司
2SA160制作材料：Ge-PNP
2SA160性质：调幅 （AM）_前置放大 （V）_混频 （M）
2SA160封装形式：直插封装
2SA160极限工作电压：15V
2SA160最大电流允许值：0.004A
2SA160最大工作频率：55MHZ
2SA160引脚数：3
2SA160最大耗散功率：
2SA160放大倍数：
2SA160图片代号：C-47
2SA160vtest：15
2SA160htest：55000000
- 2SA160atest：0.004
2SA160wtest：0
2SA160代换 2SA160用什么型号代替：AF124,AF125,AF126,AF200,2N3323,2N3324,2N3325,2SA218,2SA219,2SA220,2SA221,2SA222,2SA223,2SA224,2SA225,2SA226,2SA227,3AG54C,
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
Switching Power Transistor(-12A PNP) Switching Power Transistor | SHINDENGEN |   | ||
Silicon PNP Power Transistors DESCRIPTION • With ITO-220 package • Switching power transistor • Low collector saturation voltage | ISC 无锡固电 | | ||
Silicon PNP Power Transistors DESCRIPTION • With ITO-220 package • Switching power transistor • Low collector saturation voltage | SAVANTIC | | ||
Silicon PNP Power Transistors DESCRIPTION • With ITO-220 package • Switching power transistor • Low collector saturation voltage | JMNIC 锦美电子 | | ||
Silicon PNP Power Transistors DESCRIPTION • With ITO-220 package • Switching power transistor • Low collector saturation voltage | JMNIC 锦美电子 | | ||
Gate Driver Description: M57161L-01 is a hybrid integrated circuit designed for driving Powerex F-Series IGBT modules. This gate driver converts logic level control signals into high current gate drive with suitable on and off bias voltages. Electrical isolation of the input control signal is provided by an | POWEREX | | ||
Silicon PNP Power Transistors DESCRIPTION • With ITO-220 package • Switching power transistor • Low collector saturation voltage | ISC 无锡固电 | | ||
Silicon PNP Power Transistors DESCRIPTION • With ITO-220 package • Switching power transistor • Low collector saturation voltage | SAVANTIC | | ||
Switching Power Transistor(-15A PNP)
| SHINDENGEN | | ||
FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON PNP EPITAXIAL TYPE (SUPER MINI TYPE) DESCRIPTION 2SA1602 is a super mini package resin sealed silicon PNP epitaxial transistor, It is designed for low frequency voltage application. FEATURE ● Small collector to emitter saturation voltage. VCE(sat)=-0.3V max ● Excellent linearity of DC forward gain. ● Super m | ISAHAYA 谏早电子 | | ||
FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON PNP EPITAXIAL TYPE(Super mini type) FOR LOW FREQUENCY AMPLIFY APPLICATION FEATURE ・ Super mini package for easy mounting ・Excellent linearity of DC forward gain ・Small collector to emitter saturation voltage VCE(sat)=-0.3V max APPLICATION For Hybrid IC,small type machine low frequency voltage Amplify appli | ISAHAYA 谏早电子 | | ||
FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON PNP EPITAXIAL TYPE FOR LOW FREQUENCY AMPLIFY APPLICATION DESCRIPTION 2SA1603 is a super mini package resin sealed silicon PNP epitaxial transistor, It is designed for low frequency voltage application. . FEATURE ● Small collector to emitter saturation voltage. VCE(sat)=-0.3V max ●Excellent li | ISAHAYA 谏早电子 | | ||
FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON PNP EPITAXIAL TYPE(Super mini type) FOR LOW FREQUENCY AMPLIFY APPLICATION DESCRIPTION 2SA1603A is a super mini package resin sealed silicon PNP epitaxial transistor, It is designed for low frequency voltage application. . FEATURE ● Small collector to emitter saturation voltage. VCE(sat)=-0.3V max ●Excellent l | ISAHAYA 谏早电子 | | ||
FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON PNP EPITAXIAL TYPE FOR LOW FREQUENCY AMPLIFY APPLICATION DESCRIPTION 2SA1603 is a super mini package resin sealed silicon PNP epitaxial transistor, It is designed for low frequency voltage application. . FEATURE ● Small collector to emitter saturation voltage. VCE(sat)=-0.3V max ●Excellent li | ISAHAYA 谏早电子 | | ||
FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON PNP EPITAXIAL TYPE FOR LOW FREQUENCY AMPLIFY APPLICATION DESCRIPTION 2SA1603 is a super mini package resin sealed silicon PNP epitaxial transistor, It is designed for low frequency voltage application. . FEATURE ● Small collector to emitter saturation voltage. VCE(sat)=-0.3V max ●Excellent li | ISAHAYA 谏早电子 | | ||
FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON PNP EPITAXIAL TYPE FOR LOW FREQUENCY AMPLIFY APPLICATION DESCRIPTION 2SA1603 is a super mini package resin sealed silicon PNP epitaxial transistor, It is designed for low frequency voltage application. . FEATURE ● Small collector to emitter saturation voltage. VCE(sat)=-0.3V max ●Excellent li | ISAHAYA 谏早电子 | | ||
FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON PNP EPITAXIAL TYPE FOR LOW FREQUENCY AMPLIFY APPLICATION DESCRIPTION 2SA1603 is a super mini package resin sealed silicon PNP epitaxial transistor, It is designed for low frequency voltage application. . FEATURE ● Small collector to emitter saturation voltage. VCE(sat)=-0.3V max ●Excellent li | ISAHAYA 谏早电子 | | ||
High-Voltage Switching,AF 100W Driver Applications High-Voltage Switching, AF 100W Driver Applications Features · Micaless package facilitating mounting. Applications · High-voltage switching, AF power amplifier, 100W output predrivers. | SANYO 三洋 | | ||
High-Speed Switching Applications High-Speed Switching Applications Features • Fast switching speed. • High gain-bandwidth product. • Low saturation voltage. | SANYO 三洋 | | ||
PNP Epitaxial Planar Silicon Transistors Features ● Fast switching speed. ● High gain-bandwidth product. ● Low saturation voltage. ● Complementary to 2SC4168 | KEXIN 科信电子 | | ||
PNP Transistors Features ● Fast switching speed. ● High gain-bandwidth product. ● Low saturation voltage. ● Complementary to 2SC4168-HF ● Pb−Free Package May be Available. The G−Suffix Denotes a Pb−Free Lead Finish | KEXIN 科信电子 | | ||
PNP Transistors Features ● Fast switching speed. ● High gain-bandwidth product. ● Low saturation voltage. ● Complementary to 2SC4168-HF ● Pb−Free Package May be Available. The G−Suffix Denotes a Pb−Free Lead Finish | KEXIN 科信电子 | | ||
PNP Transistors Features ● Fast switching speed. ● High gain-bandwidth product. ● Low saturation voltage. ● Complementary to 2SC4168-HF ● Pb−Free Package May be Available. The G−Suffix Denotes a Pb−Free Lead Finish | KEXIN 科信电子 | | ||
HIGH FREQUENCY AMPLIFIER AND SWITCHING PNP SILICON EPITAXIAL TRANSISTOR FEATURES ● High fT : fT = 400 MHz ● Complementary to 2SC3739 | NEC 瑞萨 | | ||
PNP Silicon Epitaxia ■ Features ● High fT : fT=400MHz ● Complementary to 2SC3739 | KEXIN 科信电子 | | ||
SILICON TRANSISTOR HIGH VOLTAGE AMPLIFIER PNP SILICON EPITAXIAL TRANSISTOR | RENESAS 瑞萨 | | ||
Low-Saturation Voltage Switching Transistors / LSV Series (Three Terminal Type) | SHINDENGEN | | ||
Trans GP BJT PNP 40V 12A 3-Pin(3+Tab) ITO-220 | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | ||
Silicon PNP Power Transistor 文件：184.06 Kbytes Page：2 Pages | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | ||
Silicon PNP Power Transistors 文件：155.9 Kbytes Page：3 Pages | JMNIC 锦美电子 | | ||
Silicon PNP Power Transistors 文件：155.9 Kbytes Page：3 Pages | JMNIC 锦美电子 | | ||
Silicon PNP Power Transistor 文件：183.19 Kbytes Page：2 Pages | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | ||
Silicon PNP Power Transistors 文件：161.83 Kbytes Page：3 Pages | JMNIC 锦美电子 | | ||
Trans GP BJT PNP 40V 15A 3-Pin(3+Tab) ITO-220 | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | ||
Silicon PNP Power Transistors 文件：161.83 Kbytes Page：3 Pages | JMNIC 锦美电子 | | ||
Silicon PNP Power Transistor 文件：184.48 Kbytes Page：2 Pages | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | ||
Complement to Type 2SC4159 文件：104.76 Kbytes Page：2 Pages | ISC 无锡固电 | | ||
PNP Transistors 文件：1.03788 Mbytes Page：3 Pages | KEXIN 科信电子 | | ||
PNP Transistors 文件：1.06955 Mbytes Page：3 Pages | KEXIN 科信电子 | | ||
PNP Transistors 文件：1.08738 Mbytes Page：3 Pages | KEXIN 科信电子 | | ||
PNP Transistors 文件：1.06955 Mbytes Page：3 Pages | KEXIN 科信电子 | | ||
PNP Transistors 文件：1.03788 Mbytes Page：3 Pages | KEXIN 科信电子 | | ||
PNP Transistors 文件：1.08738 Mbytes Page：3 Pages | KEXIN 科信电子 | | ||
PNP Transistors 文件：1.03788 Mbytes Page：3 Pages | KEXIN 科信电子 | | ||
PNP Transistors 文件：1.06955 Mbytes Page：3 Pages | KEXIN 科信电子 | | ||
PNP Transistors 文件：1.08738 Mbytes Page：3 Pages | KEXIN 科信电子 | | ||
SILICON TRANSISTOR 文件：435.75 Kbytes Page：6 Pages | RENESAS 瑞萨 | | ||
PNP Transistors 文件：1.69846 Mbytes Page：3 Pages | KEXIN 科信电子 | | ||
PNP Transistors 文件：1.69846 Mbytes Page：3 Pages | KEXIN 科信电子 | | ||
PNP Transistors 文件：1.69846 Mbytes Page：3 Pages | KEXIN 科信电子 | | ||
PNP Transistors 文件：1.69846 Mbytes Page：3 Pages | KEXIN 科信电子 | |
2SA160产品属性
- 类型
描述
- VCBO (V)：
60
- VCEO (V)：
40
- PD (W)：
30
- PACKAGE：
TO-220
- PNP：
2SA1600
- HFE (Min/Max)：
70
- IC/VCE (A/V)：
6.0/2.0
- VCE(SAT) (V)：
0.3
- IC / IB (A/mA)：
6.0/300
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
SANYO |
2016+ |
SOT-323 |
51000 |
只做原装,假一罚十,公司可开17%增值税发票! |
|||
MITSUBISHI/三菱 |
25+ |
SOT-323SC-70 |
20000 |
原装 |
|||
SOT323 |
2796 |
正品原装--自家现货-实单可谈 |
|||||
原装三菱 |
19+ |
SOT-323 |
20000 |
原装现货假一罚十 |
|||
SOT-23 |
23+ |
NA |
15659 |
振宏微专业只做正品,假一罚百! |
|||
MITSUM |
2450+ |
SOT323 |
8850 |
只做原装正品假一赔十为客户做到零风险!! |
|||
SHINDENGEN/新电元 |
25+ |
TR |
880000 |
明嘉莱只做原装正品现货 |
|||
MITSUBISHI/三菱 |
21+ |
SOT-323SC-70 |
120000 |
长期代理优势供应 |
|||
MITSUBIS |
22+ |
SOT-23 |
20000 |
只做原装 |
|||
MITSUBISHI |
05+ |
SOT-323SC-70 |
17487 |
全新 发货1-2天 |
2SA160规格书下载地址
2SA160参数引脚图相关
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- 485接口
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- 3g汽车
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- 2sc4226
- 2SA1627
- 2SA1626
- 2SA1625
- 2SA1624
- 2SA1621
- 2SA1620
- 2SA1619
- 2SA1618
- 2SA1617
- 2SA1616
- 2SA1615(Z)
- 2SA1615
- 2SA1614
- 2SA1613
- 2SA1612
- 2SA1611
- 2SA1610
- 2SA161
- 2SA1609
- 2SA1608
- 2SA1607
- 2SA1606
- 2SA1605
- 2SA1604
- 2SA1603
- 2SA1602
- 2SA1601
- 2SA1600
- 2SA16
- 2SA15H
- 2SA1599
- 2SA1598
- 2SA1597
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- 2SA1595
- 2SA1594
- 2SA1593
- 2SA1592
- 2SA1591
- 2SA1590
- 2SA159
- 2SA1589
- 2SA1588
- 2SA1587
- 2SA1586
- 2SA1585(S)
- 2SA1585
- 2SA1584
- 2SA1583
- 2SA1581
- 2SA1580
- 2SA1579
- 2SA1577
- 2SA1576
- 2SA1575
- 2SA1572
- 2SA1568
- 2SA1567
- 2SA1566
- 2SA1564
2SA160数据表相关新闻
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2019-5-9
DdatasheetPDF页码索引
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