2SA159晶体管资料

  • 2SA159别名:2SA159三极管、2SA159晶体管、2SA159晶体三极管

  • 2SA159生产厂家:日本日电公司

  • 2SA159制作材料:Ge-PNP

  • 2SA159性质:调幅 (AM)_前置放大 (V)_混频 (M)

  • 2SA159封装形式:直插封装

  • 2SA159极限工作电压:15V

  • 2SA159最大电流允许值:0.004A

  • 2SA159最大工作频率:55MHZ

  • 2SA159引脚数:3

  • 2SA159最大耗散功率

  • 2SA159放大倍数

  • 2SA159图片代号:C-47

  • 2SA159vtest:15

  • 2SA159htest:55000000

  • 2SA159atest:0.004

  • 2SA159wtest:0

  • 2SA159代换 2SA159用什么型号代替:AF124,AF125,AF126,AF200,2N3323,2N3324,2N3325,2SA218,2SA219,2SA220,2SA221,2SA222,2SA223,2SA224,2SA225,2SA226,2SA227,3AG54C,

2SA159价格

参考价格:¥2.0191

型号:2SA1593S-TL-E 品牌:ON SEMICONDUCTOR 备注:这里有2SA159多少钱,2025年最近7天走势,今日出价,今日竞价,2SA159批发/采购报价,2SA159行情走势销售排行榜,2SA159报价。
型号 功能描述 生产厂家 企业 LOGO 操作

High-Voltage Switching Applications

High-Voltage Switching Applications Features · Adoption FBET, MBIT processes. · High breakdown voltage and large current capacity. · Fast switching speed. · Small and slim package permitting 2SA1592/2SC4134-applied sets to be made more compact. Applications · Power supplies, relay drivers,

SANYO

三洋

Silicon PNP Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -120V(Min) ·DC Current Gain- : hFE= 100(Min)@ IC= -0.1A ·Ultrahigh-speed switching ·Complementary to 2SC4134 APPLICATIONS ·Power supplies,relay drivers,lamp drivers

ISC

无锡固电

Silicon PNP Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -120V(Min) ·DC Current Gain- : hFE= 100(Min)@ IC= -0.1A ·Ultrahigh-speed switching ·Complementary to 2SC4134 APPLICATIONS ·Power supplies,relay drivers,lamp drivers

ISC

无锡固电

Silicon PNP Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -120V(Min) ·DC Current Gain- : hFE= 100(Min)@ IC= -0.1A ·Ultrahigh-speed switching ·Complementary to 2SC4134 APPLICATIONS ·Power supplies,relay drivers,lamp drivers

ISC

无锡固电

Silicon PNP Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -120V(Min) ·DC Current Gain- : hFE= 100(Min)@ IC= -0.1A ·Ultrahigh-speed switching ·Complementary to 2SC4134 APPLICATIONS ·Power supplies,relay drivers,lamp drivers

ISC

无锡固电

Silicon PNP Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -120V(Min) ·DC Current Gain- : hFE= 100(Min)@ IC= -0.1A ·Ultrahigh-speed switching ·Complementary to 2SC4135 APPLICATIONS ·Power supplies,relay drivers,lamp drivers

ISC

无锡固电

Silicon PNP Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -120V(Min) ·DC Current Gain- : hFE= 100(Min)@ IC= -0.1A ·Ultrahigh-speed switching ·Complementary to 2SC4135 APPLICATIONS ·Power supplies,relay drivers,lamp drivers

ISC

无锡固电

Bipolar Transistor Adoption of FBET, MBIT processes

Features • Adoption of FBET, MBIT processes • High breakdown voltage and large current capacity • Fast switching speed • Small and slim package permitting 2SA1593/2SC4135-applied sets to be made more compact Applications • Power supplies, relay derivers, lamp drivers

ONSEMI

安森美半导体

High-Voltage Switching Applications

High-Voltage Switching Applications Features • Adoption of FBET, MBIT processes. • High breakdown voltage and large current capacity. • Fast switching speed. • Small and slim package permitting 2SA1593/ 2SC4135-applied sets to be made more compact. Applications • Power supplies

SANYO

三洋

Silicon PNP Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -120V(Min) ·DC Current Gain- : hFE= 100(Min)@ IC= -0.1A ·Ultrahigh-speed switching ·Complementary to 2SC4135 APPLICATIONS ·Power supplies,relay drivers,lamp drivers

ISC

无锡固电

Silicon PNP Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -120V(Min) ·DC Current Gain- : hFE= 100(Min)@ IC= -0.1A ·Ultrahigh-speed switching ·Complementary to 2SC4135 APPLICATIONS ·Power supplies,relay drivers,lamp drivers

ISC

无锡固电

Bipolar Transistor Adoption of FBET, MBIT processes

Features • Adoption of FBET, MBIT processes • High breakdown voltage and large current capacity • Fast switching speed • Small and slim package permitting 2SA1593/2SC4135-applied sets to be made more compact Applications • Power supplies, relay derivers, lamp drivers

ONSEMI

安森美半导体

Bipolar Transistor Adoption of FBET, MBIT processes

Features • Adoption of FBET, MBIT processes • High breakdown voltage and large current capacity • Fast switching speed • Small and slim package permitting 2SA1593/2SC4135-applied sets to be made more compact Applications • Power supplies, relay derivers, lamp drivers

ONSEMI

安森美半导体

Bipolar Transistor Adoption of FBET, MBIT processes

Features • Adoption of FBET, MBIT processes • High breakdown voltage and large current capacity • Fast switching speed • Small and slim package permitting 2SA1593/2SC4135-applied sets to be made more compact Applications • Power supplies, relay derivers, lamp drivers

ONSEMI

安森美半导体

Bipolar Transistor Adoption of FBET, MBIT processes

Features • Adoption of FBET, MBIT processes • High breakdown voltage and large current capacity • Fast switching speed • Small and slim package permitting 2SA1593/2SC4135-applied sets to be made more compact Applications • Power supplies, relay derivers, lamp drivers

ONSEMI

安森美半导体

Switching Power Transistor(-7A PNP)

Switching Power Transistor -7A PNP

SHINDENGEN

Silicon PNP Power Transistors

DESCRIPTION • With ITO-220 package • Switching power transistor • Low collector saturation voltage

ISC

无锡固电

Silicon PNP Power Transistors

DESCRIPTION • With ITO-220 package • Switching power transistor • Low collector saturation voltage

JMNIC

锦美电子

Silicon PNP Power Transistors

DESCRIPTION • With ITO-220 package • Switching power transistor • Low collector saturation voltage

SAVANTIC

Silicon PNP Power Transistors

DESCRIPTION • With ITO-220 package • Switching power transistor • Low collector saturation voltage

SAVANTIC

Silicon PNP Power Transistors

DESCRIPTION • With ITO-220 package • Switching power transistor • Low collector saturation voltage

JMNIC

锦美电子

Silicon PNP Power Transistors

DESCRIPTION • With ITO-220 package • Switching power transistor • Low collector saturation voltage

ISC

无锡固电

Switching Power Transistor(-10A PNP)

Switching Power Transistor -10A PNP

SHINDENGEN

isc Silicon PNP Power Transistor

文件:270.49 Kbytes Page:3 Pages

ISC

无锡固电

PNP Epitaxial Planar Silicon Transistors High-Voltage Switching Applications

ONSEMI

安森美半导体

双极晶体管,(-)100V,(-)2A,低饱和压,(PNP)NPN 单 TP/TP-FA

ONSEMI

安森美半导体

High-Voltage Switching Applications

文件:491.53 Kbytes Page:9 Pages

SANYO

三洋

isc Silicon PNP Power Transistor

文件:339.09 Kbytes Page:3 Pages

ISC

无锡固电

High-Voltage Switching Applications

文件:491.53 Kbytes Page:9 Pages

SANYO

三洋

Bipolar Transistor

文件:385.87 Kbytes Page:9 Pages

ONSEMI

安森美半导体

封装/外壳:TO-252-3,DPak(2 引线 + 接片),SC-63 包装:卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带 描述:TRANS PNP 100V 2A TP-FA 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个

ONSEMI

安森美半导体

Bipolar Transistor

文件:385.87 Kbytes Page:9 Pages

ONSEMI

安森美半导体

封装/外壳:TO-251-3 短引线,IPak,TO-251AA 包装:卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带 描述:TRANS PNP 100V 2A TP 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个

ONSEMI

安森美半导体

Bipolar Transistor

文件:385.87 Kbytes Page:9 Pages

ONSEMI

安森美半导体

Bipolar Transistor

文件:385.87 Kbytes Page:9 Pages

ONSEMI

安森美半导体

Silicon PNP Power Transistor

文件:184.22 Kbytes Page:2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

Silicon PNP Power Transistors

文件:155.96 Kbytes Page:3 Pages

JMNIC

锦美电子

Silicon PNP Power Transistors

文件:155.96 Kbytes Page:3 Pages

JMNIC

锦美电子

Silicon PNP Power Transistors

文件:156.03 Kbytes Page:3 Pages

JMNIC

锦美电子

Silicon PNP Power Transistor

文件:186.26 Kbytes Page:2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

Trans GP BJT PNP 40V 10A 3-Pin(3+Tab) ITO-220

NJS

Silicon PNP Power Transistors

文件:156.03 Kbytes Page:3 Pages

JMNIC

锦美电子

2SA159产品属性

  • 类型

    描述

  • 型号

    2SA159

  • 功能描述

    两极晶体管 - BJT BIP PNP 2A 100V

  • RoHS

  • 制造商

    STMicroelectronics

  • 晶体管极性

    PNP 集电极—基极电压

  • VCBO

    集电极—发射极最大电压

  • VCEO

    - 40 V 发射极 - 基极电压

  • VEBO

    - 6 V

  • 增益带宽产品fT

    直流集电极/Base Gain hfe

  • Min

    100 A

  • 安装风格

    SMD/SMT

  • 封装/箱体

    PowerFLAT 2 x 2

更新时间:2025-10-30 14:59:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
SHINDENGEN/新电元
2023+
TO-220f
5165
原厂全新正品旗舰店优势现货
SHINDENGEN/新电元
24+
TO-220f
5480
原装正品/假一罚十/支持样品/可开发票
MITSUBISHI
1922+
SOT-323
35689
原装进口现货库存专业工厂研究所配单供货
SHINDENGEN
2023+
TO220F
58000
进口原装,现货热卖
YXYBDT/一芯源
23+
TO-220F
900000
原厂授权代理,海外优势订货渠道。可提供大量库存,详
SHINDENGEN/新电元
25+
TO-220F
32360
SHINDENGEN/新电元全新特价2SA1598即刻询购立享优惠#长期有货
新电源
00+
TO-220f
8897
一级代理,专注军工、汽车、医疗、工业、新能源、电力
SHINDENGEN/新电元
24+
NA/
7132
原装现货,当天可交货,原型号开票
ST
23+
CAN to-39
16900
正规渠道,只有原装!
NEC
24+
CAN3
4326
公司原厂原装现货假一罚十!特价出售!强势库存!

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