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2SA159晶体管资料
2SA159别名:2SA159三极管、2SA159晶体管、2SA159晶体三极管
2SA159生产厂家:日本日电公司
2SA159制作材料:Ge-PNP
2SA159性质:调幅 (AM)_前置放大 (V)_混频 (M)
2SA159封装形式:直插封装
2SA159极限工作电压:15V
2SA159最大电流允许值:0.004A
2SA159最大工作频率:55MHZ
2SA159引脚数:3
2SA159最大耗散功率:
2SA159放大倍数:
2SA159图片代号:C-47
2SA159vtest:15
2SA159htest:55000000
- 2SA159atest:0.004
2SA159wtest:0
2SA159代换 2SA159用什么型号代替:AF124,AF125,AF126,AF200,2N3323,2N3324,2N3325,2SA218,2SA219,2SA220,2SA221,2SA222,2SA223,2SA224,2SA225,2SA226,2SA227,3AG54C,
2SA159价格
参考价格:¥2.0191
型号:2SA1593S-TL-E 品牌:ON SEMICONDUCTOR 备注:这里有2SA159多少钱,2025年最近7天走势,今日出价,今日竞价,2SA159批发/采购报价,2SA159行情走势销售排行榜,2SA159报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
High-Voltage Switching Applications High-Voltage Switching Applications Features · Adoption FBET, MBIT processes. · High breakdown voltage and large current capacity. · Fast switching speed. · Small and slim package permitting 2SA1592/2SC4134-applied sets to be made more compact. Applications · Power supplies, relay drivers, | SANYO 三洋 | |||
Silicon PNP Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -120V(Min) ·DC Current Gain- : hFE= 100(Min)@ IC= -0.1A ·Ultrahigh-speed switching ·Complementary to 2SC4134 APPLICATIONS ·Power supplies,relay drivers,lamp drivers | ISC 无锡固电 | |||
Silicon PNP Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -120V(Min) ·DC Current Gain- : hFE= 100(Min)@ IC= -0.1A ·Ultrahigh-speed switching ·Complementary to 2SC4134 APPLICATIONS ·Power supplies,relay drivers,lamp drivers | ISC 无锡固电 | |||
Silicon PNP Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -120V(Min) ·DC Current Gain- : hFE= 100(Min)@ IC= -0.1A ·Ultrahigh-speed switching ·Complementary to 2SC4134 APPLICATIONS ·Power supplies,relay drivers,lamp drivers | ISC 无锡固电 | |||
Silicon PNP Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -120V(Min) ·DC Current Gain- : hFE= 100(Min)@ IC= -0.1A ·Ultrahigh-speed switching ·Complementary to 2SC4134 APPLICATIONS ·Power supplies,relay drivers,lamp drivers | ISC 无锡固电 | |||
Silicon PNP Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -120V(Min) ·DC Current Gain- : hFE= 100(Min)@ IC= -0.1A ·Ultrahigh-speed switching ·Complementary to 2SC4135 APPLICATIONS ·Power supplies,relay drivers,lamp drivers | ISC 无锡固电 | |||
Silicon PNP Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -120V(Min) ·DC Current Gain- : hFE= 100(Min)@ IC= -0.1A ·Ultrahigh-speed switching ·Complementary to 2SC4135 APPLICATIONS ·Power supplies,relay drivers,lamp drivers | ISC 无锡固电 | |||
Bipolar Transistor Adoption of FBET, MBIT processes Features • Adoption of FBET, MBIT processes • High breakdown voltage and large current capacity • Fast switching speed • Small and slim package permitting 2SA1593/2SC4135-applied sets to be made more compact Applications • Power supplies, relay derivers, lamp drivers | ONSEMI 安森美半导体 | |||
High-Voltage Switching Applications High-Voltage Switching Applications Features • Adoption of FBET, MBIT processes. • High breakdown voltage and large current capacity. • Fast switching speed. • Small and slim package permitting 2SA1593/ 2SC4135-applied sets to be made more compact. Applications • Power supplies | SANYO 三洋 | |||
Silicon PNP Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -120V(Min) ·DC Current Gain- : hFE= 100(Min)@ IC= -0.1A ·Ultrahigh-speed switching ·Complementary to 2SC4135 APPLICATIONS ·Power supplies,relay drivers,lamp drivers | ISC 无锡固电 | |||
Silicon PNP Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -120V(Min) ·DC Current Gain- : hFE= 100(Min)@ IC= -0.1A ·Ultrahigh-speed switching ·Complementary to 2SC4135 APPLICATIONS ·Power supplies,relay drivers,lamp drivers | ISC 无锡固电 | |||
Bipolar Transistor Adoption of FBET, MBIT processes Features • Adoption of FBET, MBIT processes • High breakdown voltage and large current capacity • Fast switching speed • Small and slim package permitting 2SA1593/2SC4135-applied sets to be made more compact Applications • Power supplies, relay derivers, lamp drivers | ONSEMI 安森美半导体 | |||
Bipolar Transistor Adoption of FBET, MBIT processes Features • Adoption of FBET, MBIT processes • High breakdown voltage and large current capacity • Fast switching speed • Small and slim package permitting 2SA1593/2SC4135-applied sets to be made more compact Applications • Power supplies, relay derivers, lamp drivers | ONSEMI 安森美半导体 | |||
Bipolar Transistor Adoption of FBET, MBIT processes Features • Adoption of FBET, MBIT processes • High breakdown voltage and large current capacity • Fast switching speed • Small and slim package permitting 2SA1593/2SC4135-applied sets to be made more compact Applications • Power supplies, relay derivers, lamp drivers | ONSEMI 安森美半导体 | |||
Bipolar Transistor Adoption of FBET, MBIT processes Features • Adoption of FBET, MBIT processes • High breakdown voltage and large current capacity • Fast switching speed • Small and slim package permitting 2SA1593/2SC4135-applied sets to be made more compact Applications • Power supplies, relay derivers, lamp drivers | ONSEMI 安森美半导体 | |||
Switching Power Transistor(-7A PNP) Switching Power Transistor -7A PNP | SHINDENGEN | |||
Silicon PNP Power Transistors DESCRIPTION • With ITO-220 package • Switching power transistor • Low collector saturation voltage | ISC 无锡固电 | |||
Silicon PNP Power Transistors DESCRIPTION • With ITO-220 package • Switching power transistor • Low collector saturation voltage | JMNIC 锦美电子 | |||
Silicon PNP Power Transistors DESCRIPTION • With ITO-220 package • Switching power transistor • Low collector saturation voltage | SAVANTIC | |||
Silicon PNP Power Transistors DESCRIPTION • With ITO-220 package • Switching power transistor • Low collector saturation voltage | SAVANTIC | |||
Silicon PNP Power Transistors DESCRIPTION • With ITO-220 package • Switching power transistor • Low collector saturation voltage | JMNIC 锦美电子 | |||
Silicon PNP Power Transistors DESCRIPTION • With ITO-220 package • Switching power transistor • Low collector saturation voltage | ISC 无锡固电 | |||
Switching Power Transistor(-10A PNP) Switching Power Transistor -10A PNP | SHINDENGEN | |||
isc Silicon PNP Power Transistor 文件:270.49 Kbytes Page:3 Pages | ISC 无锡固电 | |||
PNP Epitaxial Planar Silicon Transistors High-Voltage Switching Applications | ONSEMI 安森美半导体 | |||
双极晶体管,(-)100V,(-)2A,低饱和压,(PNP)NPN 单 TP/TP-FA | ONSEMI 安森美半导体 | |||
High-Voltage Switching Applications 文件:491.53 Kbytes Page:9 Pages | SANYO 三洋 | |||
isc Silicon PNP Power Transistor 文件:339.09 Kbytes Page:3 Pages | ISC 无锡固电 | |||
High-Voltage Switching Applications 文件:491.53 Kbytes Page:9 Pages | SANYO 三洋 | |||
Bipolar Transistor 文件:385.87 Kbytes Page:9 Pages | ONSEMI 安森美半导体 | |||
封装/外壳:TO-252-3,DPak(2 引线 + 接片),SC-63 包装:卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带 描述:TRANS PNP 100V 2A TP-FA 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个 | ONSEMI 安森美半导体 | |||
Bipolar Transistor 文件:385.87 Kbytes Page:9 Pages | ONSEMI 安森美半导体 | |||
封装/外壳:TO-251-3 短引线,IPak,TO-251AA 包装:卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带 描述:TRANS PNP 100V 2A TP 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个 | ONSEMI 安森美半导体 | |||
Bipolar Transistor 文件:385.87 Kbytes Page:9 Pages | ONSEMI 安森美半导体 | |||
Bipolar Transistor 文件:385.87 Kbytes Page:9 Pages | ONSEMI 安森美半导体 | |||
Silicon PNP Power Transistor 文件:184.22 Kbytes Page:2 Pages | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | |||
Silicon PNP Power Transistors 文件:155.96 Kbytes Page:3 Pages | JMNIC 锦美电子 | |||
Silicon PNP Power Transistors 文件:155.96 Kbytes Page:3 Pages | JMNIC 锦美电子 | |||
Silicon PNP Power Transistors 文件:156.03 Kbytes Page:3 Pages | JMNIC 锦美电子 | |||
Silicon PNP Power Transistor 文件:186.26 Kbytes Page:2 Pages | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | |||
Trans GP BJT PNP 40V 10A 3-Pin(3+Tab) ITO-220 | NJS | |||
Silicon PNP Power Transistors 文件:156.03 Kbytes Page:3 Pages | JMNIC 锦美电子 |
2SA159产品属性
- 类型
描述
- 型号
2SA159
- 功能描述
两极晶体管 - BJT BIP PNP 2A 100V
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
PNP 集电极—基极电压
- VCBO
集电极—发射极最大电压
- VCEO
- 40 V 发射极 - 基极电压
- VEBO
- 6 V
- 增益带宽产品fT
直流集电极/Base Gain hfe
- Min
100 A
- 安装风格
SMD/SMT
- 封装/箱体
PowerFLAT 2 x 2
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
SHINDENGEN/新电元 |
2023+ |
TO-220f |
5165 |
原厂全新正品旗舰店优势现货 |
|||
SHINDENGEN/新电元 |
24+ |
TO-220f |
5480 |
原装正品/假一罚十/支持样品/可开发票 |
|||
MITSUBISHI |
1922+ |
SOT-323 |
35689 |
原装进口现货库存专业工厂研究所配单供货 |
|||
SHINDENGEN |
2023+ |
TO220F |
58000 |
进口原装,现货热卖 |
|||
YXYBDT/一芯源 |
23+ |
TO-220F |
900000 |
原厂授权代理,海外优势订货渠道。可提供大量库存,详 |
|||
SHINDENGEN/新电元 |
25+ |
TO-220F |
32360 |
SHINDENGEN/新电元全新特价2SA1598即刻询购立享优惠#长期有货 |
|||
新电源 |
00+ |
TO-220f |
8897 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
SHINDENGEN/新电元 |
24+ |
NA/ |
7132 |
原装现货,当天可交货,原型号开票 |
|||
ST |
23+ |
CAN to-39 |
16900 |
正规渠道,只有原装! |
|||
NEC |
24+ |
CAN3 |
4326 |
公司原厂原装现货假一罚十!特价出售!强势库存! |
2SA159规格书下载地址
2SA159参数引脚图相关
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- 4921
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- 485接口
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- 4591
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- 3g汽车
- 3579
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- 303c
- 2sc4226
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- 2SA1617
- 2SA1615
- 2SA1612
- 2SA1611
- 2SA1610
- 2SA1608
- 2SA1607
- 2SA1606
- 2SA1605
- 2SA1604
- 2SA1603
- 2SA1602
- 2SA1601
- 2SA1600
- 2SA160
- 2SA16
- 2SA15H
- 2SA1599
- 2SA1598
- 2SA1597
- 2SA1596
- 2SA1595
- 2SA1594
- 2SA1593
- 2SA1592
- 2SA1591
- 2SA1590
- 2SA1589
- 2SA1588
- 2SA1587
- 2SA1586
- 2SA1585(S)
- 2SA1585
- 2SA1584
- 2SA1583
- 2SA1582
- 2SA1581
- 2SA1580
- 2SA1579
- 2SA1578
- 2SA1577
- 2SA1576
- 2SA1575
- 2SA1574
- 2SA1573
- 2SA1572
- 2SA1571
- 2SA157
- 2SA1568
- 2SA1567
- 2SA1566
- 2SA1564
- 2SA1562
- 2SA1561
- 2SA1560
- 2SA1553
2SA159数据表相关新闻
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DdatasheetPDF页码索引
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