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2SA1593晶体管资料

  • 2SA1593别名:2SA1593三极管、2SA1593晶体管、2SA1593晶体三极管

  • 2SA1593生产厂家:日本三洋公司

  • 2SA1593制作材料:Si-PNP

  • 2SA1593性质:开关管 (S)_功率放大 (L)

  • 2SA1593封装形式:直插封装

  • 2SA1593极限工作电压:120V

  • 2SA1593最大电流允许值:2A

  • 2SA1593最大工作频率:120MHZ

  • 2SA1593引脚数:3

  • 2SA1593最大耗散功率:15W

  • 2SA1593放大倍数

  • 2SA1593图片代号:A-80

  • 2SA1593vtest:120

  • 2SA1593htest:120000000

  • 2SA1593atest:2

  • 2SA1593wtest:15

  • 2SA1593代换 2SA1593用什么型号代替:2SB768,2SB905,2SB928,2SB1215,2SB1216,

2SA1593价格

参考价格:¥2.0191

型号:2SA1593S-TL-E 品牌:ON SEMICONDUCTOR 备注:这里有2SA1593多少钱,2026年最近7天走势,今日出价,今日竞价,2SA1593批发/采购报价,2SA1593行情走势销售排行榜,2SA1593报价。
型号 功能描述 生产厂家 企业 LOGO 操作
2SA1593

High-Voltage Switching Applications

High-Voltage Switching Applications Features • Adoption of FBET, MBIT processes. • High breakdown voltage and large current capacity. • Fast switching speed. • Small and slim package permitting 2SA1593/ 2SC4135-applied sets to be made more compact. Applications • Power supplies

SANYO

三洋

2SA1593

Bipolar Transistor Adoption of FBET, MBIT processes

Features • Adoption of FBET, MBIT processes • High breakdown voltage and large current capacity • Fast switching speed • Small and slim package permitting 2SA1593/2SC4135-applied sets to be made more compact Applications • Power supplies, relay derivers, lamp drivers

ONSEMI

安森美半导体

2SA1593

Silicon PNP Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -120V(Min) ·DC Current Gain- : hFE= 100(Min)@ IC= -0.1A ·Ultrahigh-speed switching ·Complementary to 2SC4135 APPLICATIONS ·Power supplies,relay drivers,lamp drivers

ISC

无锡固电

2SA1593

Silicon PNP Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -120V(Min) ·DC Current Gain- : hFE= 100(Min)@ IC= -0.1A ·Ultrahigh-speed switching ·Complementary to 2SC4135 APPLICATIONS ·Power supplies,relay drivers,lamp drivers

ISC

无锡固电

2SA1593

双极晶体管,(-)100V,(-)2A,低饱和压,(PNP)NPN 单 TP/TP-FA

2SA1593/2SC4135 is Bipolar Transistor, (-)100V, (-)2A, Low VCE(sat), (PNP)NPN Single TP/TP-FA for High-Voltage Switching Applications. • Adoption of FBET, MBIT processes\n• High breakdown voltage and large current capacity\n• Fast switching speed\n• Small and slim package permitting 2SA1593/2SC4135-applied sets to be made more compact;

ONSEMI

安森美半导体

2SA1593

isc Silicon PNP Power Transistor

文件:339.09 Kbytes Page:3 Pages

ISC

无锡固电

2SA1593

High-Voltage Switching Applications

文件:491.53 Kbytes Page:9 Pages

SANYO

三洋

Silicon PNP Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -120V(Min) ·DC Current Gain- : hFE= 100(Min)@ IC= -0.1A ·Ultrahigh-speed switching ·Complementary to 2SC4135 APPLICATIONS ·Power supplies,relay drivers,lamp drivers

ISC

无锡固电

Silicon PNP Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -120V(Min) ·DC Current Gain- : hFE= 100(Min)@ IC= -0.1A ·Ultrahigh-speed switching ·Complementary to 2SC4135 APPLICATIONS ·Power supplies,relay drivers,lamp drivers

ISC

无锡固电

Bipolar Transistor Adoption of FBET, MBIT processes

Features • Adoption of FBET, MBIT processes • High breakdown voltage and large current capacity • Fast switching speed • Small and slim package permitting 2SA1593/2SC4135-applied sets to be made more compact Applications • Power supplies, relay derivers, lamp drivers

ONSEMI

安森美半导体

Bipolar Transistor Adoption of FBET, MBIT processes

Features • Adoption of FBET, MBIT processes • High breakdown voltage and large current capacity • Fast switching speed • Small and slim package permitting 2SA1593/2SC4135-applied sets to be made more compact Applications • Power supplies, relay derivers, lamp drivers

ONSEMI

安森美半导体

Bipolar Transistor Adoption of FBET, MBIT processes

Features • Adoption of FBET, MBIT processes • High breakdown voltage and large current capacity • Fast switching speed • Small and slim package permitting 2SA1593/2SC4135-applied sets to be made more compact Applications • Power supplies, relay derivers, lamp drivers

ONSEMI

安森美半导体

Bipolar Transistor Adoption of FBET, MBIT processes

Features • Adoption of FBET, MBIT processes • High breakdown voltage and large current capacity • Fast switching speed • Small and slim package permitting 2SA1593/2SC4135-applied sets to be made more compact Applications • Power supplies, relay derivers, lamp drivers

ONSEMI

安森美半导体

High-Voltage Switching Applications

文件:491.53 Kbytes Page:9 Pages

SANYO

三洋

Bipolar Transistor

文件:385.87 Kbytes Page:9 Pages

ONSEMI

安森美半导体

Bipolar Transistor

文件:385.87 Kbytes Page:9 Pages

ONSEMI

安森美半导体

封装/外壳:TO-252-3,DPak(2 引线 + 接片),SC-63 包装:卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带 描述:TRANS PNP 100V 2A TP-FA 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个

ONSEMI

安森美半导体

Bipolar Transistor

文件:385.87 Kbytes Page:9 Pages

ONSEMI

安森美半导体

封装/外壳:TO-251-3 短引线,IPak,TO-251AA 包装:卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带 描述:TRANS PNP 100V 2A TP 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个

ONSEMI

安森美半导体

Bipolar Transistor

文件:385.87 Kbytes Page:9 Pages

ONSEMI

安森美半导体

2SA1593产品属性

  • 类型

    描述

  • Pb-free:

    Pb

  • Status:

    Active

  • Polarity:

    PNP

  • Type:

    Low VCE(sat)

  • VCE(sat) Max (V):

    0.6

  • IC Cont. (A):

    2

  • VCEO Min (V):

    100

  • VCBO (V):

    120

  • VEBO (V):

    6

  • VBE(sat) (V):

    0.85

  • hFE Min:

    140

  • hFE Max:

    280

  • PTM Max (W):

    1

  • Package Type:

    DPAK-3/TO-252-3

更新时间:2026-5-15 11:03:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
SANYO
12+
TO-252
15000
全新原装,绝对正品,公司现货供应。
ON/安森美
23+
TO-252-2(DPAK)
8080
正规渠道,只有原装!
ON(安森美)
2447
TO-252-3
115000
700个/圆盘一级代理专营品牌!原装正品,优势现货,长
ON/安森美
23+
SMD
8000
只做原装现货
ON/安森美
23+
TO-252
50000
全新原装正品现货,支持订货
ON/安森美
25+
TO-252-2(DPAK)
30000
原装正品公司现货,假一赔十!
Sanyo
25+23+
To-252
31681
绝对原装正品全新进口深圳现货
SANYO
24+
2043
ON
22+
TO-220-3
50000
原装正品假一罚十,代理渠道价格优
ON/安森美
2021+
TO-252-2(DPAK)
7600
原装现货,欢迎询价

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