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2SA1593晶体管资料
2SA1593别名：2SA1593三极管、2SA1593晶体管、2SA1593晶体三极管
2SA1593生产厂家：日本三洋公司
2SA1593制作材料：Si-PNP
2SA1593性质：开关管 （S）_功率放大 （L）
2SA1593封装形式：直插封装
2SA1593极限工作电压：120V
2SA1593最大电流允许值：2A
2SA1593最大工作频率：120MHZ
2SA1593引脚数：3
2SA1593最大耗散功率：15W
2SA1593放大倍数：
2SA1593图片代号：A-80
2SA1593vtest：120
2SA1593htest：120000000
- 2SA1593atest：2
2SA1593wtest：15
2SA1593代换 2SA1593用什么型号代替：2SB768,2SB905,2SB928,2SB1215,2SB1216,
2SA1593价格
参考价格：￥2.0191
型号：2SA1593S-TL-E 品牌：ON SEMICONDUCTOR 备注：这里有2SA1593多少钱，2025年最近7天走势，今日出价，今日竞价，2SA1593批发/采购报价，2SA1593行情走势销售排行榜，2SA1593报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
2SA1593 | High-Voltage Switching Applications High-Voltage Switching Applications Features • Adoption of FBET, MBIT processes. • High breakdown voltage and large current capacity. • Fast switching speed. • Small and slim package permitting 2SA1593/ 2SC4135-applied sets to be made more compact. Applications • Power supplies | SANYO 三洋 |   | |
2SA1593 | Bipolar Transistor Adoption of FBET, MBIT processes Features • Adoption of FBET, MBIT processes • High breakdown voltage and large current capacity • Fast switching speed • Small and slim package permitting 2SA1593/2SC4135-applied sets to be made more compact Applications • Power supplies, relay derivers, lamp drivers | ONSEMI 安森美半导体 | | |
2SA1593 | Silicon PNP Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -120V(Min) ·DC Current Gain- : hFE= 100(Min)@ IC= -0.1A ·Ultrahigh-speed switching ·Complementary to 2SC4135 APPLICATIONS ·Power supplies,relay drivers,lamp drivers | ISC 无锡固电 | | |
2SA1593 | Silicon PNP Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -120V(Min) ·DC Current Gain- : hFE= 100(Min)@ IC= -0.1A ·Ultrahigh-speed switching ·Complementary to 2SC4135 APPLICATIONS ·Power supplies,relay drivers,lamp drivers | ISC 无锡固电 | | |
2SA1593 | isc Silicon PNP Power Transistor 文件：339.09 Kbytes Page：3 Pages | ISC 无锡固电 | | |
2SA1593 | High-Voltage Switching Applications 文件：491.53 Kbytes Page：9 Pages | SANYO 三洋 | | |
2SA1593 | 双极晶体管，(-)100V，(-)2A，低饱和压，(PNP)NPN 单 TP/TP-FA | ONSEMI 安森美半导体 | | |
Silicon PNP Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -120V(Min) ·DC Current Gain- : hFE= 100(Min)@ IC= -0.1A ·Ultrahigh-speed switching ·Complementary to 2SC4135 APPLICATIONS ·Power supplies,relay drivers,lamp drivers | ISC 无锡固电 | | ||
Silicon PNP Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -120V(Min) ·DC Current Gain- : hFE= 100(Min)@ IC= -0.1A ·Ultrahigh-speed switching ·Complementary to 2SC4135 APPLICATIONS ·Power supplies,relay drivers,lamp drivers | ISC 无锡固电 | | ||
Bipolar Transistor Adoption of FBET, MBIT processes Features • Adoption of FBET, MBIT processes • High breakdown voltage and large current capacity • Fast switching speed • Small and slim package permitting 2SA1593/2SC4135-applied sets to be made more compact Applications • Power supplies, relay derivers, lamp drivers | ONSEMI 安森美半导体 | | ||
Bipolar Transistor Adoption of FBET, MBIT processes Features • Adoption of FBET, MBIT processes • High breakdown voltage and large current capacity • Fast switching speed • Small and slim package permitting 2SA1593/2SC4135-applied sets to be made more compact Applications • Power supplies, relay derivers, lamp drivers | ONSEMI 安森美半导体 | | ||
Bipolar Transistor Adoption of FBET, MBIT processes Features • Adoption of FBET, MBIT processes • High breakdown voltage and large current capacity • Fast switching speed • Small and slim package permitting 2SA1593/2SC4135-applied sets to be made more compact Applications • Power supplies, relay derivers, lamp drivers | ONSEMI 安森美半导体 | | ||
Bipolar Transistor Adoption of FBET, MBIT processes Features • Adoption of FBET, MBIT processes • High breakdown voltage and large current capacity • Fast switching speed • Small and slim package permitting 2SA1593/2SC4135-applied sets to be made more compact Applications • Power supplies, relay derivers, lamp drivers | ONSEMI 安森美半导体 | | ||
High-Voltage Switching Applications 文件：491.53 Kbytes Page：9 Pages | SANYO 三洋 | | ||
Bipolar Transistor 文件：385.87 Kbytes Page：9 Pages | ONSEMI 安森美半导体 | | ||
Bipolar Transistor 文件：385.87 Kbytes Page：9 Pages | ONSEMI 安森美半导体 | | ||
封装/外壳：TO-252-3，DPak（2 引线 + 接片），SC-63 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS PNP 100V 2A TP-FA 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 | ONSEMI 安森美半导体 | | ||
Bipolar Transistor 文件：385.87 Kbytes Page：9 Pages | ONSEMI 安森美半导体 | | ||
封装/外壳：TO-251-3 短引线，IPak，TO-251AA 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS PNP 100V 2A TP 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 | ONSEMI 安森美半导体 | | ||
Bipolar Transistor 文件：385.87 Kbytes Page：9 Pages | ONSEMI 安森美半导体 | |
2SA1593产品属性
- 类型
描述
- 型号
2SA1593
- 功能描述
两极晶体管 - BJT BIP PNP 2A 100V
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
PNP 集电极—基极电压
- VCBO
集电极—发射极最大电压
- VCEO
- 40 V 发射极 - 基极电压
- VEBO
- 6 V
- 增益带宽产品fT
直流集电极/Base Gain hfe
- Min
100 A
- 安装风格
SMD/SMT
- 封装/箱体
PowerFLAT 2 x 2
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
onsemi(安森美) |
24+ |
TO-252 |
1400 |
原厂订货渠道,支持BOM配单一站式服务 |
|||
TOSHIBA/东芝 |
24+ |
NA/ |
3508 |
原装现货,当天可交货,原型号开票 |
|||
TOS |
2016+ |
TO-252 |
3000 |
只做原装,假一罚十,公司可开17%增值税发票! |
|||
SANYO/三洋 |
22+ |
SOT-252 |
100000 |
代理渠道/只做原装/可含税 |
|||
TOS |
2011+ |
TO-252 |
258 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
TOSHIBA/东芝 |
2450+ |
TO-252 |
9850 |
只做原厂原装正品现货或订货假一赔十! |
|||
ON/安森美 |
25+ |
25000 |
原厂原包 深圳现货 主打品牌 假一赔百 可开票! |
||||
ON/安森美 |
24+ |
TO-252-2(DPAK) |
30000 |
原装正品公司现货,假一赔十! |
|||
ON/安森美 |
23+ |
TO-252-2(DPAK) |
8080 |
正规渠道,只有原装! |
|||
ONN |
2526+ |
原厂封装 |
650 |
只做原装优势现货库存 渠道可追溯 |
2SA1593芯片相关品牌
2SA1593规格书下载地址
2SA1593参数引脚图相关
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- 2SA1572
- 2SA1568
- 2SA1567
- 2SA1566
- 2SA1564
- 2SA1562
- 2SA1561
- 2SA1560
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DdatasheetPDF页码索引
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