Medium Power Transistor (32V, 1A)

Medium Power Transistor (32V, 1A) 1) Low VCE(sat).\n    VCE(sat)= 0.2V(Typ.)\n    (IC / IB = 500mA / 50mA)\n2) Compliments 2SD1664 /  2SD1858Structure\nEpitaxial planar type\nPNP silicon transistor;

PNP Plastic Encapsulated Transistor

FEATURES Low Collector-Emitter Saturation Voltage Low Transition Frequency

丝印代码：A1515S；Medium Power Transistor

Medium Power Transistor (-32V, -1A) Features 1) Low VCE(sat). VCE(sat)= -0.2V(Typ.) (IC / IB = -500mA / -50mA) 2) Compliments 2SD1664 / 2SD1858 Structure Epitaxial planar type PNP silicon transistor

丝印代码：A1515S；Medium Power Transistor (−32V,−1A)

文件：79.9 Kbytes Page：5 Pages

丝印代码：A1515S；Medium Power Transistor (-32V, -1A)

文件：179.26 Kbytes Page：5 Pages

丝印代码：A1515S；Medium Power Transistor (-32V,-1A)

文件：149.66 Kbytes Page：4 Pages