Medium Power Transistor

Medium Power Transistor (-32V, -1A) Features 1) Low VCE(sat). VCE(sat)= -0.2V(Typ.) (IC / IB = -500mA / -50mA) 2) Compliments 2SD1664 / 2SD1858 Structure Epitaxial planar type PNP silicon transistor

Medium Power Transistor (-32V,??1A)

Medium Power Transistor (-32V, -1A) Features 1) Low VCE(sat). VCE(sat)= -0.2V(Typ.) (IC / IB = -500mA / -50mA) 2) Compliments 2SD1664 / 2SD1858 Structure Epitaxial planar type PNP silicon transistor

TO-92S Plastic-Encapsulate Transistors

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Medium Power Transistor (−32V,−1A)

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Medium Power Transistor (-32V, -1A)

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Medium Power Transistor (-32V,-1A)

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晶体管

PNP Plastic Encapsulated Transistor

FEATURES Low Collector-Emitter Saturation Voltage Low Transition Frequency

TO-92 Plastic-Encapsulate Transistors

Features Low Collector-Emitter Saturation Voltage Low Transition Frequency

TO-92 Plastic-Encapsulate Transistors

文件：371.16 Kbytes Page：3 Pages

Medium Power Transistor (-32V,-1A)

文件：149.66 Kbytes Page：4 Pages

Medium Power Transistor (32V, 1A)

Epitaxial planar type PNP silicon transistor

封装/外壳：SC-72 成形引线 包装：剪切带（CT） 描述：TRANS PNP 32V 1A SPT 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

封装/外壳：SC-72 成形引线 包装：剪切带（CT）带盒（TB） 描述：TRANS PNP 32V 1A SPT 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个