Switching Applications

Switching Application ( with Bias Resistance R1 = 4.7kΩ) Features • On-chip bias resistance : R1 = 4.7kohms • Small-sized package : CP Applications • Switching circuits, inverter circuits, interface circuits, driver circuits

PNP / NPN EPITAXIAL PLANAR SILICON TRANSISTORS

Switching Applications (with Bias Resistance) Features • On-chip bias resistance : R1=4.7kΩ • Small-sized package : SPA Applications • Switching circuits, inverter circuits, interface circuits, driver circuits

Silicon PNP epitaxial planer type

For low-frequency amplification ■Features •Low collector-emitter saturation voltage VCE(sat) •Optimum for low-voltage operation and for converters •Allowing supply with the radial taping •Optimum for high-density mounting

Silicon PNP Power Transistors

DESCRIPTION • With TO-3PML package • High current capability • Low collector saturation voltage APPLICATIONS • For high speed and high power switching applications

Silicon PNP Power Transistors

DESCRIPTION • With TO-3PML package • High current capability • Low collector saturation voltage APPLICATIONS • For high speed and high power switching applications

Silicon PNP Power Transistors

DESCRIPTION • With TO-3PML package • High current capability • Low collector saturation voltage APPLICATIONS • For high speed and high power switching applications

High-voltage Amplifier Transistor

High-voltage Amplifier Transistor Features High breakdown voltage.

High-voltage Amplifier Transistor (-120V, -50mA)

Features 1) High breakdown voltage. (BVCEO = −120V) 2) Complements the 2SC4102 / 2SC3906K / 2SC2389S.

PNP Plastic Encapsulated Transistor

FEATURES Low Collector-Emitter Saturation Voltage Low Transition Frequency

TO-92 Plastic-Encapsulate Transistors

Features Low Collector-Emitter Saturation Voltage Low Transition Frequency

Medium Power Transistor

Medium Power Transistor (-32V, -1A) Features 1) Low VCE(sat). VCE(sat)= -0.2V(Typ.) (IC / IB = -500mA / -50mA) 2) Compliments 2SD1664 / 2SD1858 Structure Epitaxial planar type PNP silicon transistor

Medium Power Transistor (-32V,??1A)

Medium Power Transistor (-32V, -1A) Features 1) Low VCE(sat). VCE(sat)= -0.2V(Typ.) (IC / IB = -500mA / -50mA) 2) Compliments 2SD1664 / 2SD1858 Structure Epitaxial planar type PNP silicon transistor

TO-92 Plastic-Encapsulate Transistors

Features Low Collector-Emitter Saturation Voltage Low Transition Frequency

Silicon PNP Power Transistors

DESCRIPTION ·With TO-3P(I) package ·Complement to type 2SC3907 ·High collector voltage APPLICATIONS ·Power amplifier applications ·Recommend for 80W high fidelity audio frequency amplifier output stage

Silicon PNP Power Transistors

DESCRIPTION ·With TO-3P(I) package ·Complement to type 2SC3907 ·High collector voltage APPLICATIONS ·Power amplifier applications ·Recommend for 80W high fidelity audio frequency amplifier output stage

isc Silicon PNP Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage-: V(BR)CEO= -180V(Min) ·Good Linearity of hFE ·Complement to Type 2SC3907 APPLICATIONS ·Power amplifier applications ·Recommend for 80W high fidelity audio frequency amplifier output stage applications

SILICON PNP TRANSISTOR

SILICON PNP TRANSISTOR

Switching Applications(with Bias Resistance)

Switching Applications (With Bias Resistance) Features · On-chip bias resistance : R1=10kΩ, R2=10kΩ. · Small-sized package : CP. · Large current capacity : IC=500mA. Application · Switching circuits, inverters circuits, inferface circuits, driver circuits.

Switching Applications(with Bias Resistance)

Switching Applications (with Bias Resistance) Features · On-chip bias resistance : R1=4.7kΩ, R2=4.7kΩ. · Small-sized package : CP. · Large current capacity : IC=500mA. Applications · Switching circuits, inverter circuits, interface circuits, driver circuits.

PNP / NPN EPITAXIAL PLANAR SILICON TRANSISTORS

Silicon PNP Power Transistor

文件：181.69 Kbytes Page：2 Pages

Silicon PNP Power Transistors

文件：200.39 Kbytes Page：3 Pages

Silicon PNP Power Transistors

文件：200.39 Kbytes Page：3 Pages

High-voltage Amplifier Transistor

文件：161.89 Kbytes Page：3 Pages

PNP -50mA -120V High-Voltage Amplifier Transistors

文件：367.09 Kbytes Page：8 Pages

High-voltage Amplifier Transistor

文件：1.54208 Mbytes Page：11 Pages

General Purpose Amplification Transistor

PNP Transistors

文件：1.08317 Mbytes Page：4 Pages

General Purpose Amplification Transistor (支持 AEC-Q101)

PNP Transistors

文件：1.08317 Mbytes Page：4 Pages

PNP Transistors

文件：1.08317 Mbytes Page：4 Pages

封装/外壳：TO-236-3，SC-59，SOT-23-3 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS PNP 120V 0.05A SMT3 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

TO-92 Plastic-Encapsulate Transistors

文件：371.16 Kbytes Page：3 Pages

TO-92S Plastic-Encapsulate Transistors

文件：497.1 Kbytes Page：3 Pages

Medium Power Transistor (−32V,−1A)

文件：79.9 Kbytes Page：5 Pages

Medium Power Transistor (-32V, -1A)

文件：179.26 Kbytes Page：5 Pages

Medium Power Transistor (-32V,-1A)

文件：149.66 Kbytes Page：4 Pages

Medium Power Transistor (-32V,-1A)

文件：149.66 Kbytes Page：4 Pages

封装/外壳：SC-72 成形引线 包装：剪切带（CT） 描述：TRANS PNP 32V 1A SPT 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

Silicon PNP Power Transistors

文件：265.7 Kbytes Page：4 Pages

Silicon PNP Power Transistors

文件：265.7 Kbytes Page：4 Pages