PNP/ NPN EPITAXIAL PLANAR SILICON TRANSISTORS

Switching Applications (with Bias Resistances R1=2.2kΩ, R2=10kΩ)

Bipolar Transistor

Features • High breakdown voltage • Large current capacity • Adoption of FBET and MBIT process • The plastic-covered heat sink eliminates the need for an insulator when mounting the 2SA1507/2SC3902 Applications • Color TV audio output, converters, inverters

160V/1.5A Switching Applications

160V / 1.5A Switching Applications Features • High breakdown voltage • Large current capacity • Adoption of FBET and MBIT process • The plastic-covered heat sink eliminates the need for an insulator when mounting the 2SA1507/2SC3902

SWITCHING TRANSISTOR

SWITCHING TRANSISTOR FEATURES * High breakdown voltage * Large current capacitance * High-speed switching APPLICAITONS * Color TV audio output, converters, inverters

Bipolar Transistor

Features • High breakdown voltage • Large current capacity • Adoption of FBET and MBIT process • The plastic-covered heat sink eliminates the need for an insulator when mounting the 2SA1507/2SC3902 Applications • Color TV audio output, converters, inverters

Bipolar Transistor

Features • High breakdown voltage • Large current capacity • Adoption of FBET and MBIT process • The plastic-covered heat sink eliminates the need for an insulator when mounting the 2SA1507/2SC3902 Applications • Color TV audio output, converters, inverters

Silicon PNP transistor in a TO-126F Plastic Package

Descriptions Silicon PNP transistor in a TO-126F Plastic Package Features High VCEO, Large IC, complementary to 2SC3902. Applications Color TV audio output, converters, inverters.

Large Current Capacity

DESCRIPTION • High Collector-Emitter Breakdown Voltage- V(BR)CEO= -160V (Min) • Large Current Capacity • Complement to Type 2SC3902 APPLICATIONS • Designed for use in color TV audio output, converters and inverters.

Bipolar Transistor

Features • High breakdown voltage • Large current capacity • Adoption of FBET and MBIT process • The plastic-covered heat sink eliminates the need for an insulator when mounting the 2SA1507/2SC3902 Applications • Color TV audio output, converters, inverters

Silicon PNP Power Transistor

DESCRIPTION • High Collector-Emitter Breakdown Voltage- V(BR)CEO= -160V (Min) • Large Current Capacity • Complement to Type 2SC3902 APPLICATIONS • Designed for use in color TV audio output, converters and inverters.

Bipolar Transistor

Features • High breakdown voltage • Large current capacity • Adoption of FBET and MBIT process • The plastic-covered heat sink eliminates the need for an insulator when mounting the 2SA1507/2SC3902 Applications • Color TV audio output, converters, inverters

Bipolar Transistor

Features • High breakdown voltage • Large current capacity • Adoption of FBET and MBIT process • The plastic-covered heat sink eliminates the need for an insulator when mounting the 2SA1507/2SC3902 Applications • Color TV audio output, converters, inverters

Bipolar Transistor

Features • High breakdown voltage • Large current capacity • Adoption of FBET and MBIT process • The plastic-covered heat sink eliminates the need for an insulator when mounting the 2SA1507/2SC3902 Applications • Color TV audio output, converters, inverters

Bipolar Transistor

Features • High breakdown voltage • Large current capacity • Adoption of FBET and MBIT process • The plastic-covered heat sink eliminates the need for an insulator when mounting the 2SA1507/2SC3902 Applications • Color TV audio output, converters, inverters

Bipolar Transistor

Features • High breakdown voltage • Large current capacity • Adoption of FBET and MBIT process • The plastic-covered heat sink eliminates the need for an insulator when mounting the 2SA1507/2SC3902 Applications • Color TV audio output, converters, inverters

Bipolar Transistor

Features • High breakdown voltage • Large current capacity • Adoption of FBET and MBIT process • The plastic-covered heat sink eliminates the need for an insulator when mounting the 2SA1507/2SC3902 Applications • Color TV audio output, converters, inverters

Bipolar Transistor

Features • High breakdown voltage • Large current capacity • Adoption of FBET and MBIT process • The plastic-covered heat sink eliminates the need for an insulator when mounting the 2SA1507/2SC3902 Applications • Color TV audio output, converters, inverters

Bipolar Transistor

Features • High breakdown voltage • Large current capacity • Adoption of FBET and MBIT process • The plastic-covered heat sink eliminates the need for an insulator when mounting the 2SA1507/2SC3902 Applications • Color TV audio output, converters, inverters

SWITCHING APPLICATIONS WITH BIAS RESISTANCE

Switching Applications (with Bias Resistance) Features • On-chip bias resistance : R1 = 47kΩ • Small-sized package : SPA Applications • Switching circuits, inverter circuits, interface circuits, driver circuits

Switching Applications

Switching Application ( with Bias Resistance R1 = 4.7kΩ) Features • On-chip bias resistance : R1 = 4.7kohms • Small-sized package : CP Applications • Switching circuits, inverter circuits, interface circuits, driver circuits

PNP / NPN EPITAXIAL PLANAR SILICON TRANSISTORS

Switching Applications (with Bias Resistance) Features • On-chip bias resistance : R1=4.7kΩ • Small-sized package : SPA Applications • Switching circuits, inverter circuits, interface circuits, driver circuits

Silicon PNP epitaxial planer type

For low-frequency amplification ■Features •Low collector-emitter saturation voltage VCE(sat) •Optimum for low-voltage operation and for converters •Allowing supply with the radial taping •Optimum for high-density mounting

Silicon PNP Power Transistors

DESCRIPTION • With TO-3PML package • High current capability • Low collector saturation voltage APPLICATIONS • For high speed and high power switching applications

Silicon PNP Power Transistors

DESCRIPTION • With TO-3PML package • High current capability • Low collector saturation voltage APPLICATIONS • For high speed and high power switching applications

Silicon PNP Power Transistors

DESCRIPTION • With TO-3PML package • High current capability • Low collector saturation voltage APPLICATIONS • For high speed and high power switching applications

High-voltage Amplifier Transistor

High-voltage Amplifier Transistor Features High breakdown voltage.

High-voltage Amplifier Transistor (-120V, -50mA)

Features 1) High breakdown voltage. (BVCEO = −120V) 2) Complements the 2SC4102 / 2SC3906K / 2SC2389S.

PNP Plastic Encapsulated Transistor

FEATURES Low Collector-Emitter Saturation Voltage Low Transition Frequency

TO-92 Plastic-Encapsulate Transistors

Features Low Collector-Emitter Saturation Voltage Low Transition Frequency

Medium Power Transistor (-32V,??1A)

Medium Power Transistor (-32V, -1A) Features 1) Low VCE(sat). VCE(sat)= -0.2V(Typ.) (IC / IB = -500mA / -50mA) 2) Compliments 2SD1664 / 2SD1858 Structure Epitaxial planar type PNP silicon transistor

Medium Power Transistor

Medium Power Transistor (-32V, -1A) Features 1) Low VCE(sat). VCE(sat)= -0.2V(Typ.) (IC / IB = -500mA / -50mA) 2) Compliments 2SD1664 / 2SD1858 Structure Epitaxial planar type PNP silicon transistor

TO-92 Plastic-Encapsulate Transistors

Features Low Collector-Emitter Saturation Voltage Low Transition Frequency

SILICON PNP TRANSISTOR

SILICON PNP TRANSISTOR

Silicon PNP Power Transistors

DESCRIPTION ·With TO-3P(I) package ·Complement to type 2SC3907 ·High collector voltage APPLICATIONS ·Power amplifier applications ·Recommend for 80W high fidelity audio frequency amplifier output stage

isc Silicon PNP Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage-: V(BR)CEO= -180V(Min) ·Good Linearity of hFE ·Complement to Type 2SC3907 APPLICATIONS ·Power amplifier applications ·Recommend for 80W high fidelity audio frequency amplifier output stage applications

Silicon PNP Power Transistors

DESCRIPTION ·With TO-3P(I) package ·Complement to type 2SC3907 ·High collector voltage APPLICATIONS ·Power amplifier applications ·Recommend for 80W high fidelity audio frequency amplifier output stage

Switching Applications(with Bias Resistance)

Switching Applications (With Bias Resistance) Features · On-chip bias resistance : R1=10kΩ, R2=10kΩ. · Small-sized package : CP. · Large current capacity : IC=500mA. Application · Switching circuits, inverters circuits, inferface circuits, driver circuits.

Switching Applications(with Bias Resistance)

Switching Applications (with Bias Resistance) Features · On-chip bias resistance : R1=4.7kΩ, R2=4.7kΩ. · Small-sized package : CP. · Large current capacity : IC=500mA. Applications · Switching circuits, inverter circuits, interface circuits, driver circuits.

Switching Applications(with Bias Resistance)

Switching Applications (with Bias Resistance) Features · On-chip bias resistance : R1=2.2kΩ, R2=10kΩ. · Small-sized package : CP. · Large current capacity : IC=500mA. Applications · Switching circuits, inverter circuits, interface circuits, driver circuits.

Switching Applications(with Bias Resistance)

Switching Applications (with Bias Resistance) Features · On-chip bias resistance : R1=2.2kΩ, R2=2.2kΩ. · Small-sized package : CP. · Large current capacity : IC=500mA. Applications · Swicthing circuits, inverter circuits, interface circuits, dirver circuits.

Switching Applications(with Bias Resistance)

Switching Applications (with Bias Resistance) Features · On-chip bias resistance : R1=10kΩ, R2=10kΩ. · Small-sized package : SPA. · Large current capacity : IC=500mA. Applications · Switching circuits, inverter circuits, interface circuits, driver circuits.

Switching Applications(with Bias Resistance)

Switching Applications (with Bias Resistance) Features • On-chip bias resistance : R1=4.7kΩ, R2=4.7kΩ. • Small-sized package : SPA. • Large current capacity : IC=500mA. Applications • Switching circuits, inverter circuits, interface circuits, driver circuits.

Switching Applications(with Bias Resistance)

Switching Applications (with Bias Resistance) Features · On-chip bias resistance : R1=2.2kΩ, R2=10kΩ. · Small-sized package : SPA. · Large current capacity : IC=500mA. Applications · Switching circuits, inverter circuits, interface circuits, driver circuits.

Switching Applications(with Bias Resistance)

Switching Applications (with Bias Resistance) Features • On-chip bias resistance : R1=2.2kΩ, R2=2.2kΩ. • Small-sized package : SPA. • Large current capacity : IC=500mA. Applications • Switching circuits, inverter circuits, interface circuits, driver circuits.

Switching Applications(with Bias Resistance)

Switching Applications (with Bias Resistance) Features • On-chip bias resistance : R1=10kΩ, R2=10kΩ. • Large current capacity : IC=500mA. Applications • Switching circuits, inverter circuits, interface circuits, driver circuits.

Switching Applications(with Bias Resistance)

Switching Applications (with Bias Resistance) Features • On-chip bias resistance : R1=4.7kΩ, R2=4.7kΩ. • Large current capacity : IC=500mA. Applications • Switching circuits, inverter circuits, interface circuits, driver circuits.

Switching Applications(with Bias Resistance)

Switching Applications (with Bias Resistance) Features · On-chip bias resistance : R1=2.2KΩ, R2=10kΩ. · Large current capacity : IC=500mA. Applications · Switching circuits, inverter circuits, interface circuits, dirver circuits.

Switching Applications(with Bias Resistance)

Switching Applications (with Bias Resistance) Applications · Switching circuits, inverter circuits, interface circuits, driver circuits. Features · On-chip bias resistance : R1=2.2kΩ, R2=2.2kΩ. · Large current capacity : IC=500mA.

FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON PNP EPITAXIAL TYPE

[Isahaya] DESCRIPTION 2SA1530A is a super mini package resin sealed silicon PNP epitaxial transistor, It is designed for low frequency voltage application.. FEATURE ● Small collector to emitter saturation voltage. VCE(sat)=-0.3V max ● Excellent linearity of DC forward gain. ● Super mini

FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON PNP EPITAXIAL TYPE(Ultra super mini type)

DESCRIPTION 2SA1530A is a super mini package resin sealed silicon PNP epitaxial transistor, It is designed for low frequency voltage application. . FEATURE ● Small collector to emitter saturation voltage. VCE(sat)=-0.3Vmax（@Ic=-100mA、IB=-10mA） ● Excellent linearity of DC forward gain.

Silicon PNP epitaxial planer type

Silicon PNP epitaxial planer type For low-frequency and low-noise amplification Complementary to 2SC3929 and 2SC3929A ■ Features ● Low noise voltage NV. ● High foward current transfer ratio hFE. ● S-Mini type package, allowing downsizing of the equipment and automatic insertion through the t

Silicon PNP epitaxial planer type

Silicon PNP epitaxial planer type For low-frequency and low-noise amplification Complementary to 2SC3929 and 2SC3929A ■ Features ● Low noise voltage NV. ● High foward current transfer ratio hFE. ● S-Mini type package, allowing downsizing of the equipment and automatic insertion through the t

Silicon PNP Epitaxial Planar Type

Features ● Low noise voltage NV. ● High forward current transfer ratio hFE.

Silicon PNP Epitaxial Planar Type

■ Features ● High transition frequency fT. ● Complementary to 2SC3930

Silicon PNP epitaxial planer type

Silicon PNP epitaxial planer type For high-frequency amplification Complementary to 2SC3930 ■ Features ● High transition frequency fT. ● S-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing.

Silicon PNP epitaxial planer type

For low-frequency driver amplification Complementary to 2SC3939 ■ Features • Low collector-emitter voltage (Base open) VCEO • Optimum for the driver stage of a low-frequency and 25 W to 30 W output amplifier.

Silicon PNP epitaxial planer type

For low-frequency power amplification and driver amplification Complementary to 2SC3940 and 2SC3940A ■ Features ● Complementary pair with 2SC3940 and 2SC3940A. ● Allowing supply with the radial taping and automatic insertion possible.

Silicon PNP epitaxial planer type

For low-frequency power amplification and driver amplification Complementary to 2SC3940 and 2SC3940A ■ Features ● Complementary pair with 2SC3940 and 2SC3940A. ● Allowing supply with the radial taping and automatic insertion possible.

Silicon PNP epitaxial planar type

For low-frequency driver and high power amplification Complementary to 2SC3944, 2SC3944A ■Features •Excellent collector current ICcharacteristics of forward current transfer ratio hFE •High transition frequency fT •A complementary pair with 2SC3944 and 2SC3944A, is optimum for

Silicon PNP Power Transistors

DESCRIPTION ·With TO-220Fa package ·Complement to type 2SC3944/3944A ·Optimum for the driver-stage of a 60W to 100W output amplifier APPLICATIONS ·For low-frequency driver and high power amplification