型号 功能描述 生产厂家 企业 LOGO 操作

High-Voltage Switching, Predriver Applications

High-Voltage Switching, Predriver Applications Features • Adoption of FBET process. • High breakdown voltage (VCEO=160V). • Excellent linearity of hFE and small Cob. • Fast switching speed. • Very small size marking it easy to provide high density, small-sized hybrid ICs.

SANYO

三洋

High-Voltage Switching Applications

Features ● Adoption of FBET Process ● High Breakdown Voltage (VCEO = 160V) ● Excellent Linearlity of hFE and Small Cob ● Fast Switching Speed

KEXIN

科信电子

High-Voltage Switching Predriver Applications

High-Voltage Switching, Predriver Applications Features • Adoption of FBET process. • High breakdown voltage (VCEO=160V). • Excellent linearity of hFE and small Cob. • Fast switching speed. • Ultrasmall size marking it easy to provide high-density,small-sized hybrid ICs.

ONSEMI

安森美半导体

PNP Transistors

文件:1.39007 Mbytes Page:3 Pages

KEXIN

科信电子

PNP Transistors

文件:1.40834 Mbytes Page:3 Pages

KEXIN

科信电子

更新时间:2025-12-30 10:32:01
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
SANYO
22+
SOT89
20000
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SOT-89
11809
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2450+
SOT89
9485
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20+
SOT-89
120000
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2025+
SOT-89
2500
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SANYO
1922+
SOT-89
35689
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Sanyo
25+23+
Sot-89
30189
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23+
SOT-89
50000
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TO-92
36
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22+
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30000
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