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| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
General Purpose Transistor DESCRIPTION L2SA1365*LT1G is a mini packagesilicon PNP epitaxial transistor, designed with high collector current and small VCE(sat). FEATURE ● Small collector to emitter saturation voltage. VCE(sat)=-0.2V typ ● Excellent linearity of DC forward current gain. ● Super mini package for eas | LRC 乐山无线电 |   | ||
General Purpose Transistor DESCRIPTION L2SA1365*LT1G is a mini packagesilicon PNP epitaxial transistor, designed with high collector current and small VCE(sat). FEATURE ● Small collector to emitter saturation voltage. VCE(sat)=-0.2V typ ● Excellent linearity of DC forward current gain. ● Super mini package for eas | LRC 乐山无线电 | |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
LRC/乐山 |
2517+ |
SOT-23 |
8850 |
只做原装正品现货或订货假一赔十! |
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三年内 |
1983 |
只做原装正品 |
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LRC |
22+ |
SMD |
10654 |
原装现货 |
|||
24+ |
N/A |
76000 |
一级代理-主营优势-实惠价格-不悔选择 |
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LRC乐山无线电 |
25 |
10000 |
全新原装 |
2SA1365FLT1G芯片相关品牌
2SA1365FLT1G规格书下载地址
2SA1365FLT1G参数引脚图相关
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