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2SA136晶体管资料

  • 2SA136别名:2SA136三极管、2SA136晶体管、2SA136晶体三极管

  • 2SA136生产厂家:日本富士通公司

  • 2SA136制作材料:Ge-PNP

  • 2SA136性质:调幅 (AM)_前置放大 (V)_混频 (M)

  • 2SA136封装形式:直插封装

  • 2SA136极限工作电压:6V

  • 2SA136最大电流允许值:0.01A

  • 2SA136最大工作频率:10MHZ

  • 2SA136引脚数:3

  • 2SA136最大耗散功率

  • 2SA136放大倍数

  • 2SA136图片代号:C-47

  • 2SA136vtest:6

  • 2SA136htest:10000000

  • 2SA136atest:0.01

  • 2SA136wtest:0

  • 2SA136代换 2SA136用什么型号代替:AF124,AF125,AF126,AF127,AF200,2N3323,2N3324,2N3325,2SA218,2SA219,2SA220,2SA221,2SA222,2SA223,2SA224,2SA225,2SA226,2SA227,3AG54A,

型号 功能描述 生产厂家 企业 LOGO 操作

TRANSISTOR (AUDIO FREQUENCY AMPLIFIER APPLICATIONS)

Audio Frequency Amplifier Applications • Complementary to 2SC3423 • Small collector output capacitance: Cob = 2.5 pF (typ.) • High transition frequency: fT = 200 MHz (typ.)

TOSHIBA

东芝

Silicon PNP Power Transistors

DESCRIPTION ·With TO-126 package ·Complement to type 2SC3423 ·High transition frequency APPLICATIONS ·Audio frequency amplifier applications

ISC

无锡固电

Silicon PNP Power Transistors

DESCRIPTION ·With TO-126 package ·Complement to type 2SC3423 ·High transition frequency APPLICATIONS ·Audio frequency amplifier applications

SAVANTIC

Silicon PNP Power Transistors

DESCRIPTION ·With TO-126 package ·Complement to type 2SC3423 ·High transition frequency APPLICATIONS ·Audio frequency amplifier applications

JMNIC

锦美电子

Audio Frequency Amplifier Applications

Audio Frequency Amplifier Applications • Complementary to 2SC3423 • Small collector output capacitance: Cob = 2.5 pF (typ.) • High transition frequency: fT = 200 MHz (typ.)

TOSHIBA

东芝

Silicon PNP Power Transistor

DESCRIPTION • Collector-Emitter Breakdown Voltage- :V(BR)CEO=-150V(Min) • Complement to Type2SC3423 APPLICATIONS • Designed for audio frequency amplifier applications.

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)

Audio Frequency Amplifier Applications • Complementary to 2SC3423 • Small collector output capacitance: Cob = 2.5 pF (typ.) • High transition frequency: fT = 200 MHz (typ.)

TOSHIBA

东芝

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TOSHIBA

东芝

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)

Audio Frequency Amplifier Applications • Complementary to 2SC3423 • Small collector output capacitance: Cob = 2.5 pF (typ.) • High transition frequency: fT = 200 MHz (typ.)

TOSHIBA

东芝

Audio Frequency Amplifier Applications

Audio Frequency Amplifier Applications • Complementary to 2SC3423 • Small collector output capacitance: Cob = 2.5 pF (typ.) • High transition frequency: fT = 200 MHz (typ.)

TOSHIBA

东芝

2SA1361

PNP Transistors

ETCList of Unclassifed Manufacturers

未分类制造商

丝印代码:AEG;TRANSISTOR (LOW FREQUENCY POWER AMPLIFIER, SWITCHING APPLICATIONS)

Low Frequency Power Amplifier Applications Power Switching Applications • High DC current gain: hFE= 120~400 • Low saturation voltage: VCE (sat)= −0.2 V (max) (IC= −400 mA, IB= −8 mA) • Suitable for driver stage of small motor • Small package

TOSHIBA

东芝

Silicon PNP Epitaxia

Features ● Suitable for driver stage of small motor. ● Small package.

KEXIN

科信电子

丝印代码:AE;Suittable for driver stage of small motor

Features ● Suitable for driver stage of small motor. ● Small package.

SKTECHNOLGYSHIKE Electronics

时科广东时科微实业有限公司

丝印代码:AEG;Low Frequency Power Amplifier Applications Power Switching Applications

Low Frequency Power Amplifier Applications Power Switching Applications • High DC current gain: hFE= 120~400 • Low saturation voltage: VCE (sat)= −0.2 V (max) (IC= −400 mA, IB= −8 mA) • Suitable for driver stage of small motor • Small package

TOSHIBA

东芝

丝印代码:AEG;Low Frequency Power Amplifier Applications

Low Frequency Power Amplifier Applications Power Switching Applications • High DC current gain: hFE= 120~400 • Low saturation voltage: VCE (sat)= −0.2 V (max) (IC= −400 mA, IB= −8 mA) • Suitable for driver stage of small motor • Small package

TOSHIBA

东芝

Transistor for low frequency small-signal amplification

Feature:High current\nPolarity:PNP\nAEC-Q101:Conform(*)\nRoHS Compatible Product(s) (#):Available\nAssembly bases:日本 / 泰国 Collector Current IC -0.8 A \nCollector-emitter voltage VCEO -15 V ;

TOSHIBA

东芝

Low Frequency Power Amplifier Applications

Low Frequency Power Amplifier Applications Power Switching Applications • High DC current gain: hFE= 120~400 • Low saturation voltage: VCE (sat)= −0.2 V (max) (IC= −400 mA, IB= −8 mA) • Suitable for driver stage of small motor • Small package

TOSHIBA

东芝

Low Frequency Power Amplifier Applications Power Switching Applications

Low Frequency Power Amplifier Applications Power Switching Applications • High DC current gain: hFE= 120~400 • Low saturation voltage: VCE (sat)= −0.2 V (max) (IC= −400 mA, IB= −8 mA) • Suitable for driver stage of small motor • Small package

TOSHIBA

东芝

FOR HIGH CURRENT DRIVE APPLICATION SILICON PNP EPITAXIAL TYPE

FEATURE ● High hFE : hFE = 150 to 800 ● High Collector Current (IC = -2A) ● Small collector to emitter saturation voltage VCE(sat) = -0.17V typ(@ IC = -1A) ● High Collector Dissipation PC = 500mW ● Small Package For Mounting APPLICATION Samll type motor drive for VCR, deck, player, powe

ISAHAYA

谏早电子

High Current Drive Applications

Features ● High hFE : hFE = 150 to 800 ● High Collector Current (IC = -2A) ● High Collector Dissipation PC = 500mW ● Small Package For Mounting ● Complementary to 2SC3443

KEXIN

科信电子

Low Frequency Power Amplify Applications

Features ● High Voltage VCEO = -60V ● High Collector Current (IC = -1A) ● High Collector Dissipation PC = 500mW ● Small Package For Mounting ● Complementary to 2SC3444

KEXIN

科信电子

SILICON PNP TRANSISTOR

SILICON PNP TRANSISTOR

ISAHAYA

谏早电子

FOR HIGH CURRENT DRIVE APPLICATION SILICON PNP EPITAXIAL TYPE

DESCRIPTION 2SA1235 is a super mini silicon NPN epitaxial type transistor designed with high collector current,small Vce(sat). Complementary with 2SC3440. FEATURE ● Low collector to emitter saturation voltage. VCE(sat)=-0.2V typ ● Excellent linearity of DC forward current gain. ● Super mini

ISAHAYA

谏早电子

Silicon PNP Epitaxia

Features ● Low collector to emitter saturation voltage. ● Excellent linearity nof DC forward current gain. ● Super mini package for easy mounting. ● High collector current. ● High gain band width product.

KEXIN

科信电子

Silicon PNP transistor in a SOT-23 Plastic Package

Descriptions Silicon PNP transistor in a SOT-23 Plastic Package. Features Low collector to emitter saturation voltage, excellent linearity of DC forward current Gain, high collector current, high gain band width product. Applications Small type motor drive, relay drive, power supply.

FOSHAN

蓝箭电子

High Voltage Drive Applications

Features ● High Voltage VCEO = -100V ● High Collector Current (ICM = -800mA) ● High Collector Dissipation PC = 500mW ● Small Package For Mounting ● Complementary to 2SC3438

KEXIN

科信电子

FOR HIGH VOLTAGE DRIVE APPLICATION SILICON PNP EPITAXIAL TYPE

FEATURES ● High Voltage VCEO = -100V ● High Collector Current (ICM = -800mA) ● High gain band width product fT = 130MHz typ ● High Collector Dissipation PC = 500mW ● Small Package For Mounting APPLICATIONS Relay drive power supply etc.

ISAHAYA

谏早电子

FOR SMALL TYPE MOTOR, PLUNGER DRIVE APPLICATION SILICON PNP EPITAXIAL TYPE

SILICON PNP EPITAXIAL TYPE SMALL TRANSISTOR

ISAHAYA

谏早电子

Plunger Drive Applications

Plunger Drive Applications Features High Collector Current (ICM = -3A, IC = -1.5A High Collector Dissipation PC = 500mW Small Package For Mounting Complementary to 2SC3439

KEXIN

科信电子

Audio Frequency Amplifier Applications

文件:126.38 Kbytes Page:5 Pages

TOSHIBA

东芝

Audio Frequency Amplifier Applications

文件:136.92 Kbytes Page:5 Pages

TOSHIBA

东芝

Audio Frequency Amplifier Applications

文件:126.38 Kbytes Page:5 Pages

TOSHIBA

东芝

Audio Frequency Amplifier Applications

文件:136.92 Kbytes Page:5 Pages

TOSHIBA

东芝

Silicon PNP Power Transistors

文件:114.76 Kbytes Page:3 Pages

JMNIC

锦美电子

Silicon PNP Power Transistors

文件:114.76 Kbytes Page:3 Pages

JMNIC

锦美电子

2SA1361

TOSHIBA

东芝

丝印代码:AEG;Low Frequency Power Amplifier Applications Power Switching Applications

文件:307.03 Kbytes Page:4 Pages

TOSHIBA

东芝

Plastic-Encapsulate Transistors

文件:417.9 Kbytes Page:2 Pages

SHENZHENSLS

三联盛

Low Frequency Power Amplifier Applications Power Switching Applications

文件:307.03 Kbytes Page:4 Pages

TOSHIBA

东芝

PNP Transistors

文件:990.47 Kbytes Page:2 Pages

KEXIN

科信电子

PNP Transistors

文件:990.47 Kbytes Page:2 Pages

KEXIN

科信电子

封装/外壳:TO-236-3,SC-59,SOT-23-3 包装:卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带 描述:TRANS PNP 15V 0.8A SMINI 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个

ETC

知名厂家

PNP Transistors

文件:990.47 Kbytes Page:2 Pages

KEXIN

科信电子

晶体管(PNP、NPN)

IDC

PNP Transistors

文件:1.30268 Mbytes Page:3 Pages

KEXIN

科信电子

PNP Transistors

文件:1.30268 Mbytes Page:3 Pages

KEXIN

科信电子

PNP Transistors

文件:1.30268 Mbytes Page:3 Pages

KEXIN

科信电子

PNP Transistors

文件:1.30268 Mbytes Page:3 Pages

KEXIN

科信电子

PNP Transistors

文件:1.28814 Mbytes Page:3 Pages

KEXIN

科信电子

PNP Transistors

文件:1.28814 Mbytes Page:3 Pages

KEXIN

科信电子

PNP Transistors

文件:1.28814 Mbytes Page:3 Pages

KEXIN

科信电子

PNP Transistors

文件:1.28814 Mbytes Page:3 Pages

KEXIN

科信电子

FOR HIGH CURRENT DRIVE APPLICATION SILICON PNP EPITAXIAL TYPE

文件:193.21 Kbytes Page:3 Pages

ISAHAYA

谏早电子

FOR HIGH CURRENT DRIVE APPLICATION SILICON PNP EPITAXIAL TYPE

文件:193.21 Kbytes Page:3 Pages

ISAHAYA

谏早电子

PNP Transistors

文件:846.21 Kbytes Page:2 Pages

KEXIN

科信电子

FOR GENERAL PURPOSE HIGH CURRENT DRIVE APPLICATION SILICON PNP EPITAXIAL TYPE

文件:130.039 Kbytes Page:3 Pages

ISAHAYA

谏早电子

FOR GENERAL PURPOSE HIGH CURRENT DRIVE APPLICATION SILICON PNP EPITAXIAL TYPE

文件:126.81 Kbytes Page:3 Pages

ISAHAYA

谏早电子

FOR GENERAL PURPOSE HIGH CURRENT DRIVE APPLICATION SILICON PNP EPITAXIAL TYPE

文件:130.039 Kbytes Page:3 Pages

ISAHAYA

谏早电子

2SA1368

文件:69.82 Kbytes Page:4 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

2SA136产品属性

  • 类型

    描述

  • Polarity:

    PNP

  • Features:

    Low Satulation Voltage

  • VCEO(Max)(V):

    -15

  • IC(Max)(A):

    -0.8

  • hFE(Min):

    120

  • hFE(Max):

    400

  • VCE(sat)(Max)(V):

    -0.2

  • fT(Typ.)(MHz):

    120

  • Comments:

    Rank is specified by hFE range.

  • Number of pins:

    3

  • Surface mount package:

    Y

  • Package name:

    SOT-346 (S-Mini)

  • Width×Length×Height(mm):

    2.9 x 2.5 x 1.1

  • AEC-Q101:

    Qualified(*)

更新时间:2026-5-14 12:15:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
TOHSHIBA
2016+
SMD
12000
只做原装,假一罚十,公司可开17%增值税发票!
TOSHIBA
24+
SOT23-3
5000
全新原装正品,现货销售
TOSHIBA
ROHS
13352
一级代理 原装正品假一罚十价格优势长期供货
Toshiba
26+
原厂原封装
86720
全新原装正品价格最实惠 假一赔百
TOSHIBA/东芝
24+
TO-236MOD
6000
全新原装深圳仓库现货有单必成
TOSHIBA/东芝
25+
SOT-23
46505
TOSHIBA/东芝全新特价2SA1362-GR,LF即刻询购立享优惠#长期有货
TOSHIBA
原厂封装
9800
原装进口公司现货假一赔百
TOSHIBA
25+
SOT23-3
2650
原装优势!绝对公司现货
TOSHIBA/东芝
2450+
SOT23
6540
只做原装正品现货或订货假一赔十!
TOSHIBA/东芝
23+
SOT-23
7200
原厂授权代理,海外优势订货渠道。可提供大量库存,详

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