Plastic-Encapsulated Transistors

TRANSISTOR (PNP) FEATURES Power dissipation PCM : 1.5 W (Tamb=25℃) Collector current ICM : -5 A Collector-base voltage V(BR)CBO : -35 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃

isc Silicon PNP Power Transistor

DESCRIPTION • High Collector Current-IC= -5.0A • DC Current Gain- : hFE= 70(Min)@IC= -4A • Low Saturation Voltage : VCE(sat)= -1.0V(Max)@IC= -4A APPLICATIONS • Strobe flash applications. • Audio power amplifier applications.

Silicon PNP transistor in a TO-126F Plastic Package

Descriptions Silicon PNP transistor in a TO-126F Plastic Package. Features High IC, low VCE(sat). Applications Strobe flash applications, audio power amplifier applications.

TRANSISTOR (PNP)

TRANSISTOR (PNP) FEATURES Power dissipation PCM : 1.5 W (Tamb=25℃) Collector current ICM : -5 A Collector-base voltage V(BR)CBO : -35 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃

Strobe Flash Applications Audio Power Amplifier Applications

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