Silicon NPN epitaxial planer type(For low-frequency amplification)

Silicon NPN epitaxial planer type For low-frequency amplification Complementary to 2SA1309A ■Features ● Optimum for high-density mounting. ● Allowing supply with the radial taping.

Silicon PNP epitaxial planer type

For low-frequency amplification Complementary to 2SC3311A ■ Features ● High foward current transfer ratio hFE. ● Allowing supply with the radial taping. ● Optimum for high-density mounting.

Plastic-Encapsulated Transistors

FEATURES Power dissipation PCM : 0.3 W (Tamb=25℃) Collector current ICM : -0.1 A Collector-base voltage V(BR)CBO : -60 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃

TO-92S Plastic-Encapsulate Transistors

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TRANSISTOR (PNP)

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