SILICON PNP EPITAXAL TYPE

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SILICON PNP EPITAXAL TYPE

文件：97.5 Kbytes Page：2 Pages

SILICON PNP EPITAXAL TYPE

文件：97.5 Kbytes Page：2 Pages

SILICON PNP EPITAXAL TYPE

文件：97.5 Kbytes Page：2 Pages

TRANSISTOR (STROBO FLASH MEDIUM POWER AMPLIFIER APPLICATIONS)

Strobe Flash Applications Medium Power Amplifier Applications • High DC current gain and excellent hFE linearity : hFE (1) = 140~600 (VCE = −1 V, IC = −0.5 A) : hFE (2) = 60 (min), 120 (typ.) (VCE = −1 V, IC = −4 A) • Low saturation voltage: VCE (sat) = −0.5 V (max) (IC = −2 A, IB = −

TECHNICAL SPECIFICATIONS OF PNP EPITAXIAL PLANAR TRANSISTOR

Description Designed for use Strobe flash and medium power amplifier applications. Pinning 1 = Emitter 2 = Collector 3 = Base

Plastic-Encapsulated Transistors

TRANSISTOR (PNP) FEATURES Power dissipation PCM : 0.75 W (Tamb=25℃) Collector current ICM : -2 A Collector-base voltage V(BR)CBO : -20 V Operating and storage junction temperature range TJ : 150℃ Tstg: -55℃ to +150℃

PNP EPITAXIAL SILICON TRANSISTOR

SILICON PNP EPITAXAL TYPE DESCRIPTION * Strobo Flash Applications. * Medium Power Amplifier Applications. FEATURES * High DC Current Gain and Excellent hFELinearity. * hFE(1)=140-600, (VCE= -1V,IC= -0.5A) * hFE(2)=60(Min.),120(Typ.),(VCE= -1V,IC= -4A) * Low Saturation Voltage * VCE (SAT

Strobe Flash Applications Medium Power Amplifier Applications

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