isc Silicon PNP Power Transistor

DESCRIPTION • High switching speed • Low Collector-Emitter Saturation Voltage- : VCE(sat)= -0.6V(Max)@ IC= -5A • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation • Complementary to 2SC3157 APPLICATIONS • High speed high voltage switch

Silicon PNP Power Transistor

DESCRIPTION • Low Collector Saturation Voltage- : VCE(sat)=-0.6V(Max.)@lc= -5A • Fast Switching Speed • Complement to Type 2SC3157 APPLICATIONS • Developed for high-voltage high-speed switching, and is ideal for use as a driver in devices such as switching reglators, DC/DC converters, and hig

Silicon PNP Power Transistors

DESCRIPTION ·With ITO-220 package ·High switching speed ·Low collector saturation voltage ·Complement to type 2SC3157 APPLICATIONS ·For high voltage ,high speed and power switching applications

Silicon PNP Power Transistors

DESCRIPTION ·With TO-220 package ·High switching speed ·Low collector saturation voltage ·Complement to type 2SC3157 APPLICATIONS ·For high voltage ,high speed and power switching applications

PNP EPITAXIAL SILICON TRANSISTOR

PNP Silicon Epitaxial Transistor High Speed High Voltage Switching Industrial Use

Silicon PNP Power Transistors

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