2SA122晶体管资料

  • 2SA122别名:2SA122三极管、2SA122晶体管、2SA122晶体三极管

  • 2SA122生产厂家:日本索尼公司

  • 2SA122制作材料:Ge-PNP

  • 2SA122性质:调频 (FM)

  • 2SA122封装形式

  • 2SA122极限工作电压:15V

  • 2SA122最大电流允许值:0.002A

  • 2SA122最大工作频率:100MHZ

  • 2SA122引脚数

  • 2SA122最大耗散功率

  • 2SA122放大倍数

  • 2SA122图片代号:NO

  • 2SA122vtest:15

  • 2SA122htest:100000000

  • 2SA122atest:0.002

  • 2SA122wtest:0

  • 2SA122代换 2SA122用什么型号代替:AF106,AF124,AF125,AF306,2N3323,2N3324,2N3325,2AS340,2SA341,2SA342,3AG53C,

型号 功能描述 生产厂家 企业 LOGO 操作

PNP/NPN SILICON EPITAXIAL TRANSISTOR

PNP/NPN Silicon Epitaxial Transistor Audio, High Frequency Power Amplifier

ETCList of Unclassifed Manufacturers

未分类制造商

isc Silicon PNP Power Transistors

DESCRIPTION ·Good Linearity of hFE ·High Collector-Emitter Breakdown Voltage-: V(BR)CEO= -120V(Min)-2SA1220 = -160V(Min)-2SA1220A ·Complement to Type 2SC2690/A APPLICATIONS ·Adudio frequency power amplifier

ISC

无锡固电

Silicon PNP Power Transistors

DESCRIPTION ·With TO-126 package ·Complement to type 2SC2690/2690A APPLICATIONS ·Audio frequency power amplifier ·High frequency power amplifier

JMNIC

锦美电子

Silicon PNP Power Transistors

DESCRIPTION ·With TO-126 package ·Complement to type 2SC2690/2690A APPLICATIONS ·Audio frequency power amplifier ·High frequency power amplifier

SAVANTIC

PNP/NPN SILICON EPITAXIAL TRANSISTOR

PNP/NPN Silicon Epitaxial Transistor Audio, High Frequency Power Amplifier

ETCList of Unclassifed Manufacturers

未分类制造商

isc Silicon PNP Power Transistors

DESCRIPTION ·Good Linearity of hFE ·High Collector-Emitter Breakdown Voltage-: V(BR)CEO= -120V(Min)-2SA1220 = -160V(Min)-2SA1220A ·Complement to Type 2SC2690/A APPLICATIONS ·Adudio frequency power amplifier

ISC

无锡固电

Silicon PNP Power Transistors

DESCRIPTION ·With TO-126 package ·Complement to type 2SC2690/2690A APPLICATIONS ·Audio frequency power amplifier ·High frequency power amplifier

SAVANTIC

Silicon PNP Power Transistors

DESCRIPTION ·With TO-126 package ·Complement to type 2SC2690/2690A APPLICATIONS ·Audio frequency power amplifier ·High frequency power amplifier

JMNIC

锦美电子

PNP SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS

PNP SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS FEATURES • Ideal for use of high withstanding voltage current such as TV vertical deflection output, audio output, and variable power supplies. • Complementary transistor with 2SC2958 and 2SC2959 VCEO = 140 V: 2SA1

NEC

瑞萨

SILICON TRANSISTORS

PNP SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS

RENESAS

瑞萨

PNP SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS

PNP SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS FEATURES • Ideal for use of high withstanding voltage current such as TV vertical deflection output, audio output, and variable power supplies. • Complementary transistor with 2SC2958 and 2SC2959 VCEO = 140 V: 2SA1

NEC

瑞萨

TRANSISTOR (POWER AMPLIFIER APPLICATIONS)

Power Amplifier Applications Driver Stage Amplifier Applications • High transition frequency: fT = 100 MHz (typ.) • Complementary to 2SC2983

TOSHIBA

东芝

Power Amplifier Applications Driver Stage Amplifier Applications

Power Amplifier Applications Driver Stage Amplifier Applications • High transition frequency: fT = 100 MHz (typ.) • Complementary to 2SC2983

TOSHIBA

东芝

Driver Stage Amplifier Applications

Power Amplifier Applications Driver Stage Amplifier Applications • High transition frequency: fT = 100 MHz (typ.) • Complementary to 2SC2983

TOSHIBA

东芝

Silicon PNP Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -160V(Min) ·DC Current Gain- : hFE= 70(Min)@ IC= -0.1A ·High transition frequency ·Complementary to 2SC2983 APPLICATIONS ·Power amplifier applications ·Driver stage amplifier applications

ISC

无锡固电

Silicon PNP Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -160V(Min) ·DC Current Gain- : hFE= 70(Min)@ IC= -0.1A ·High transition frequency ·Complementary to 2SC2983 APPLICATIONS ·Power amplifier applications ·Driver stage amplifier applications

ISC

无锡固电

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TOSHIBA

东芝

Power Amplifier Applications Driver Stage Amplifier Applications

Power Amplifier Applications Driver Stage Amplifier Applications • High transition frequency: fT = 100 MHz (typ.) • Complementary to 2SC2983

TOSHIBA

东芝

Silicon PNP Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -160V(Min) ·DC Current Gain- : hFE= 70(Min)@ IC= -0.1A ·High transition frequency ·Complementary to 2SC2983 APPLICATIONS ·Power amplifier applications ·Driver stage amplifier applications

ISC

无锡固电

Silicon PNP Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -160V(Min) ·DC Current Gain- : hFE= 70(Min)@ IC= -0.1A ·High transition frequency ·Complementary to 2SC2983 APPLICATIONS ·Power amplifier applications ·Driver stage amplifier applications

ISC

无锡固电

Driver Stage Amplifier Applications

Power Amplifier Applications Driver Stage Amplifier Applications • High transition frequency: fT = 100 MHz (typ.) • Complementary to 2SC2983

TOSHIBA

东芝

Silicon Transistor

Features High gain bandwidth product Low output capacitance Low noise

KEXIN

科信电子

HIGH FREQUENCY AMPLIFIER PNP SILICON EPITAXIAL TRANSISTOR MINI MOLD

HIGH FREQUENCY AMPLIFIER PNP SILICON EPITAXIAL TRANSISTOR MINI MOLD

NEC

瑞萨

PNP SILICON EPITAXIAL/NPN SILICON TRIPLE DIFFUSED TRANSISTOR

PNP Silicon Epitaxial/NPN Silicon Triple Diffused Transistor Audio Frequency Power Amplifier

ETCList of Unclassifed Manufacturers

未分类制造商

Silicon PNP Power Transistors

DESCRIPTION • With TO-3PFa package • Complement to type 2SC2987/2987A • High power dissipation APPLICATIONS • For use in audio frequency power amplifier applications

JMNIC

锦美电子

Silicon PNP Power Transistors

DESCRIPTION • With TO-3PFa package • Complement to type 2SC2987/2987A • High power dissipation APPLICATIONS • For use in audio frequency power amplifier applications

SAVANTIC

Silicon PNP Power Transistor

DESCRIPTION • Collector-Emitter Breakdown Voltage- : V(BR)CEO= -140V(Min) • Good Linearity of I>E • Complement to Type 2SC2987 APPLICATIONS • For audio frequency power amplifier applications.

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

Silicon PNP Power Transistors

DESCRIPTION • With TO-3PFa package • Complement to type 2SC2987/2987A • High power dissipation APPLICATIONS • For use in audio frequency power amplifier applications

ISC

无锡固电

Silicon PNP Power Transistors

DESCRIPTION • With TO-3PFa package • Complement to type 2SC2987/2987A • High power dissipation APPLICATIONS • For use in audio frequency power amplifier applications

SAVANTIC

Silicon PNP Power Transistors

DESCRIPTION • With TO-3PFa package • Complement to type 2SC2987/2987A • High power dissipation APPLICATIONS • For use in audio frequency power amplifier applications

ISC

无锡固电

Silicon PNP Power Transistors

DESCRIPTION • With TO-3PFa package • Complement to type 2SC2987/2987A • High power dissipation APPLICATIONS • For use in audio frequency power amplifier applications

JMNIC

锦美电子

PNP SILICON EPITAXIAL/NPN SILICON TRIPLE DIFFUSED TRANSISTOR

PNP Silicon Epitaxial/NPN Silicon Triple Diffused Transistor Audio Frequency Power Amplifier

ETCList of Unclassifed Manufacturers

未分类制造商

Silicon PNP Power Transistors

文件:127.13 Kbytes Page:2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

Silicon PNP Power Transistors

文件:194.94 Kbytes Page:4 Pages

JMNIC

锦美电子

Silicon PNP Power Transistors

文件:194.94 Kbytes Page:4 Pages

JMNIC

锦美电子

Silicon PNP Power Transistors

文件:127.13 Kbytes Page:2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

Transistor-Bipolar Power Transistors

RENESAS

瑞萨

Transistor-Bipolar Power Transistors

RENESAS

瑞萨

Transistor-Bipolar Power Transistors

RENESAS

瑞萨

isc Silicon PNP Power Transistor

文件:243.24 Kbytes Page:2 Pages

ISC

无锡固电

TO-252-2L Plastic-Encapsulate Transistors

文件:1.16692 Mbytes Page:4 Pages

JIANGSU

长电科技

Power Amplifier Applications Driver Stage Amplifier Applications

文件:163.16 Kbytes Page:4 Pages

TOSHIBA

东芝

Power Amplifier Applications Driver Stage Amplifier Applications

文件:163.16 Kbytes Page:4 Pages

TOSHIBA

东芝

封装/外壳:TO-252-3,DPak(2 引线 + 接片),SC-63 包装:卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带 描述:TRANS PNP 160V 1.5A PW-MOLD 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个

ETC

知名厂家

Silicon PNP Power Transistors

文件:166.66 Kbytes Page:3 Pages

JMNIC

锦美电子

Silicon PNP Power Transistors

文件:166.66 Kbytes Page:3 Pages

JMNIC

锦美电子

2SA122产品属性

  • 类型

    描述

  • 型号

    2SA122

  • 制造商

    Panasonic Industrial Company

  • 功能描述

    TRANSISTOR

更新时间:2025-10-31 23:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
CJ/长电
24+
NA/
5682
原装现货,当天可交货,原型号开票
TOSHIBA
2023+
TO-252
50000
原装现货
TOSHIBA/东芝
22+
SOT252
100000
代理渠道/只做原装/可含税
TOSHIBA/东芝
2450+
TO-251
9850
只做原装正品现货或订货假一赔十!
TOSHIBA/东芝
04+
TO-251
5
TOSHIBA/东芝
23+
TO-251
30000
全新原装现货,价格优势
CJ/长电
21+
TO-252
30000
百域芯优势 实单必成 可开13点增值税发票
长电
25+23+
TO-252
23945
绝对原装正品全新进口深圳现货
TOSHIBA/东芝
24+
TO-251
5
只做原厂渠道 可追溯货源
TOS
24+
TO-252
27500
原装正品,价格最低!

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