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2SA117晶体管资料

  • 2SA117别名:2SA117三极管、2SA117晶体管、2SA117晶体三极管

  • 2SA117生产厂家:日本富士通公司

  • 2SA117制作材料:Ge-PNP

  • 2SA117性质:调幅 (AM)_调频 (FM)_振荡级 (O)

  • 2SA117封装形式:直插封装

  • 2SA117极限工作电压:30V

  • 2SA117最大电流允许值:0.01A

  • 2SA117最大工作频率:110MHZ

  • 2SA117引脚数:3

  • 2SA117最大耗散功率

  • 2SA117放大倍数

  • 2SA117图片代号:D-58

  • 2SA117vtest:30

  • 2SA117htest:110000000

  • 2SA117atest:0.01

  • 2SA117wtest:0

  • 2SA117代换 2SA117用什么型号代替:AF124,AF125,AF200,2N3323,2N3324,2N3325,2SA340,2SA341,2SA342,3AG53D,

型号 功能描述 生产厂家 企业 LOGO 操作

2SA1170

Silicon PNP Power Transistor

ETCList of Unclassifed Manufacturers

未分类制造商

Silicon PNP Power Transistors

DESCRIPTION • With MT-200 package • High power dissipation • Complement to type 2SC2774 APPLICATIONS • Audio and general purpose applications

ISC

无锡固电

Silicon PNP Power Transistors

DESCRIPTION • With MT-200 package • High power dissipation • Complement to type 2SC2774 APPLICATIONS • Audio and general purpose applications

SAVANTIC

Silicon PNP Power Transistors

DESCRIPTION • With MT-200 package • High power dissipation • Complement to type 2SC2774 APPLICATIONS • Audio and general purpose applications

JMNIC

锦美电子

Silicon PNP Power Transistor

DESCRIPTION • Collector-Emitter Breakdown Voltage V(BR)CEo= -200V(Min) • High Power Dissipation • Complement to Type 2SC2774 APPLICATIONS • Designed for power amplifier and general purpose applications.

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

Silicon PNP Epitaxial

Application Low frequency small signal amplifier

RENESAS

瑞萨

New Jersey Semi-Conductor Products,

New Jersey Semi-Conductor Products

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

Silicon PNP Epitaxial

Low frequency small signal amplifier;

HITACHIHitachi Semiconductor

日立日立公司

Silicon PNP Epitaxial

Features Low frequency small signal amplifier

HITACHIHitachi Semiconductor

日立日立公司

Silicon PNP Epitaxial

Features Low frequency small signal amplifier

KEXIN

科信电子

Silicon PNP Epitaxial

Application Low frequency small signal amplifier

RENESAS

瑞萨

Silicon PNP Epitaxial

Application Low frequency small signal amplifier

RENESAS

瑞萨

SILICON TRANSISTOR

PNP SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD

RENESAS

瑞萨

New Jersey Semi-Conductor Products,

New Jersey Semi-Conductor Products

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

New Jersey Semi-Conductor Products,

New Jersey Semi-Conductor Products

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

PNP SILICON TRANSISTOR

DESCRIPTION The 2SA1175 is designed for use in driver stage of AF amplifier. FEATURES ● High hFE and excellent linearity : 200 TYP. hFE (IC = -1.0 mA) ● Complementary to the NEC 2SC2785 NPN transistor.

NEC

瑞萨

New Jersey Semi-Conductor Products,

New Jersey Semi-Conductor Products

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

New Jersey Semi-Conductor Products,

New Jersey Semi-Conductor Products

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

HF Amp Applications

HF Amp Applications Features • High fT (230MHz typ.) and small Cre (1.1 pF typ.). • Small NF (2.5dB typ.). Use • Ideally suited for use in FM RF amplifiers, mixers, oscillators, converters, IF amplifiers.

SANYO

三洋

丝印代码:M;Silicon Epitaxial Planar Transistor

FEATURES ● High forward current transfer ratio hFE which has satisfactory linearity. ● High speed switching. ● Complementary to 2SD1749. APPLICATIONS ● For power application and switching.

BILIN

银河微电

New Jersey Semi-Conductor Products,

New Jersey Semi-Conductor Products

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

丝印代码:M;Silicon Epitaxial Planar Transistor

FEATURES ● High forward current transfer ratio hFE which has satisfactory linearity. ● High speed switching. ● Complementary to 2SD1749. APPLICATIONS ● For power application and switching.

LUGUANG

鲁光电子

Plastic-Encapsulate Transistors

FEATURES High breakdown voltage

HOTTECH

合科泰

TRANSISTOR (PNP)

TRANSISTOR (PNP) FEATURES ◾ High breakdown voltage

JIANGSU

长电科技

2SA1179 PNP/NPN Transistor

Low-Frequency General-Purpose Amplifier Applications Features • Miniature package facilitates miniaturization in end products. • High breakdown voltage.

SANYO

三洋

PNP Epitaxial Planar Silicon Transistors

Features ● High breakdown voltage

KEXIN

科信电子

PNP Silicon Plastic Encapsulated Transistor

FEATURES • High breakdown voltage

SECOS

喜可士

TRANSISTOR(PNP)

FEATURES ◾ High breakdown voltage

HTSEMI

金誉半导体

丝印代码:M;SOT-23 Plastic-Encapsulate Transistors

FEATURES . High breakdown voltage

DGNJDZ

南晶电子

2SA1179N

PNP / NPN Epitaxial Planar Silicon Transistor Features • Miniature package facilitates miniaturization in end products • High breakdown voltage

SANYO

三洋

Silicon PNP Power Transistors

文件:167 Kbytes Page:3 Pages

JMNIC

锦美电子

Silicon PNP Power Transistors

文件:167 Kbytes Page:3 Pages

JMNIC

锦美电子

Transistors>Amplifiers/Bipolar

RENESAS

瑞萨

PNP Transistors

文件:725.69 Kbytes Page:2 Pages

KEXIN

科信电子

PNP Transistors

文件:725.69 Kbytes Page:2 Pages

KEXIN

科信电子

Transistor-Bipolar Small Signal Transistors

RENESAS

瑞萨

PNP Transistors

文件:725.69 Kbytes Page:2 Pages

KEXIN

科信电子

Low Saturation Voltage

文件:92.83 Kbytes Page:2 Pages

ISC

无锡固电

丝印代码:M;Silicon Epitaxial Planar Transistor

文件:138.03 Kbytes Page:4 Pages

BILIN

银河微电

丝印代码:M;Silicon Epitaxial Planar Transistor

文件:166.21 Kbytes Page:4 Pages

BILIN

银河微电

SOT-23 BIPOLAR TRANSISTORS TRANSISTOR(PNP)

文件:295.75 Kbytes Page:2 Pages

RECTRON

丽正

Silicon Epitaxial Planar Transistor

文件:175.42 Kbytes Page:4 Pages

BILIN

银河微电

Low-Frequency General-Purpose Amplifier Applications

文件:58.61 Kbytes Page:5 Pages

SANYO

三洋

Silicon Epitaxial Planar Transistor

文件:166.21 Kbytes Page:4 Pages

BILIN

银河微电

PNP Transistors

文件:466.32 Kbytes Page:1 Pages

KEXIN

科信电子

Silicon Epitaxial Planar Transistor

文件:138.03 Kbytes Page:4 Pages

BILIN

银河微电

Low-Frequency General-Purpose Amp Applications

文件:433.33 Kbytes Page:7 Pages

SANYO

三洋

Low-Frequency General-Purpose Amp Applications

文件:40.67 Kbytes Page:4 Pages

SANYO

三洋

Low-Frequency General-Purpose Amp Applications

文件:40.67 Kbytes Page:4 Pages

SANYO

三洋

Low-Frequency General-Purpose Amp Applications

文件:433.33 Kbytes Page:7 Pages

SANYO

三洋

Bipolar Transistor

文件:418.37 Kbytes Page:7 Pages

ONSEMI

安森美半导体

封装/外壳:TO-236-3,SC-59,SOT-23-3 包装:卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带 描述:TRANS PNP 50V 0.15A 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个

ONSEMI

安森美半导体

封装/外壳:TO-236-3,SC-59,SOT-23-3 包装:散装 描述:TRANS PNP 50V 0.15A 3CP 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个

ONSEMI

安森美半导体

Bipolar Transistor

文件:418.37 Kbytes Page:7 Pages

ONSEMI

安森美半导体

2SA117产品属性

  • 类型

    描述

  • NPN/PNP:

    PNP

  • VCEO (V):

    -90

  • IC (A) @25 °C:

    -0.05

  • hFE min.:

    250

  • hFE max.:

    800

  • Pc (W):

    0.15

  • fT (GHz) typ.:

    0.2

  • Package Type:

    MPAK

  • Production Status:

    EOL announced

更新时间:2026-5-14 17:37:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
RENESAS
24+
SOT-23
16900
原装正品现货支持实单
RENESAS
26+
SOT-23
360000
进口原装现货
PHI
25+23+
Sot-23
30609
绝对原装正品全新进口深圳现货
RENESAS/瑞萨
23+
SOT-23
100586
全新原厂原装正品现货,可提供技术支持、样品免费!
RENESAS/瑞萨
2025+
SOT-23
5000
原装进口价格优 请找坤融电子!
NEC
24+
5000
RENESAS
22+
SOT-23
20000
公司只有原装 品质保证
HITACHI
01+
SOT23
1507
全新 发货1-2天
RENESAS
2511
SOT-23
6000
电子元器件采购降本30%!原厂直采,砍掉中间差价
PHI
26+
原厂原封装
86720
全新原装正品价格最实惠 假一赔百

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