2SA117晶体管资料

  • 2SA117别名:2SA117三极管、2SA117晶体管、2SA117晶体三极管

  • 2SA117生产厂家:日本富士通公司

  • 2SA117制作材料:Ge-PNP

  • 2SA117性质:调幅 (AM)_调频 (FM)_振荡级 (O)

  • 2SA117封装形式:直插封装

  • 2SA117极限工作电压:30V

  • 2SA117最大电流允许值:0.01A

  • 2SA117最大工作频率:110MHZ

  • 2SA117引脚数:3

  • 2SA117最大耗散功率

  • 2SA117放大倍数

  • 2SA117图片代号:D-58

  • 2SA117vtest:30

  • 2SA117htest:110000000

  • 2SA117atest:0.01

  • 2SA117wtest:0

  • 2SA117代换 2SA117用什么型号代替:AF124,AF125,AF200,2N3323,2N3324,2N3325,2SA340,2SA341,2SA342,3AG53D,

型号 功能描述 生产厂家 企业 LOGO 操作

2SA1170

Silicon PNP Power Transistor

ETCList of Unclassifed Manufacturers

未分类制造商

Silicon PNP Power Transistors

DESCRIPTION • With MT-200 package • High power dissipation • Complement to type 2SC2774 APPLICATIONS • Audio and general purpose applications

ISC

无锡固电

Silicon PNP Power Transistors

DESCRIPTION • With MT-200 package • High power dissipation • Complement to type 2SC2774 APPLICATIONS • Audio and general purpose applications

SAVANTIC

Silicon PNP Power Transistors

DESCRIPTION • With MT-200 package • High power dissipation • Complement to type 2SC2774 APPLICATIONS • Audio and general purpose applications

JMNIC

锦美电子

Silicon PNP Power Transistor

DESCRIPTION • Collector-Emitter Breakdown Voltage V(BR)CEo= -200V(Min) • High Power Dissipation • Complement to Type 2SC2774 APPLICATIONS • Designed for power amplifier and general purpose applications.

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

Silicon PNP Epitaxial

Application Low frequency small signal amplifier

RENESAS

瑞萨

New Jersey Semi-Conductor Products,

New Jersey Semi-Conductor Products

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

Silicon PNP Epitaxial

Features Low frequency small signal amplifier

HitachiHitachi Semiconductor

日立日立公司

Silicon PNP Epitaxial

Features Low frequency small signal amplifier

KEXIN

科信电子

Silicon PNP Epitaxial

Application Low frequency small signal amplifier

RENESAS

瑞萨

Silicon PNP Epitaxial

Application Low frequency small signal amplifier

RENESAS

瑞萨

SILICON TRANSISTOR

PNP SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD

RENESAS

瑞萨

New Jersey Semi-Conductor Products,

New Jersey Semi-Conductor Products

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

New Jersey Semi-Conductor Products,

New Jersey Semi-Conductor Products

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

PNP SILICON TRANSISTOR

DESCRIPTION The 2SA1175 is designed for use in driver stage of AF amplifier. FEATURES ● High hFE and excellent linearity : 200 TYP. hFE (IC = -1.0 mA) ● Complementary to the NEC 2SC2785 NPN transistor.

NEC

瑞萨

New Jersey Semi-Conductor Products,

New Jersey Semi-Conductor Products

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

New Jersey Semi-Conductor Products,

New Jersey Semi-Conductor Products

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

HF Amp Applications

HF Amp Applications Features • High fT (230MHz typ.) and small Cre (1.1 pF typ.). • Small NF (2.5dB typ.). Use • Ideally suited for use in FM RF amplifiers, mixers, oscillators, converters, IF amplifiers.

SANYO

三洋

Silicon Epitaxial Planar Transistor

FEATURES ● High forward current transfer ratio hFE which has satisfactory linearity. ● High speed switching. ● Complementary to 2SD1749. APPLICATIONS ● For power application and switching.

BILIN

银河微电

New Jersey Semi-Conductor Products,

New Jersey Semi-Conductor Products

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

Silicon Epitaxial Planar Transistor

FEATURES ● High forward current transfer ratio hFE which has satisfactory linearity. ● High speed switching. ● Complementary to 2SD1749. APPLICATIONS ● For power application and switching.

LUGUANG

鲁光电子

Plastic-Encapsulate Transistors

FEATURES High breakdown voltage

HOTTECH

合科泰

TRANSISTOR (PNP)

TRANSISTOR (PNP) FEATURES ◾ High breakdown voltage

JIANGSU

长电科技

2SA1179 PNP/NPN Transistor

Low-Frequency General-Purpose Amplifier Applications Features • Miniature package facilitates miniaturization in end products. • High breakdown voltage.

SANYO

三洋

PNP Epitaxial Planar Silicon Transistors

Features ● High breakdown voltage

KEXIN

科信电子

PNP Silicon Plastic Encapsulated Transistor

FEATURES • High breakdown voltage

SECOS

喜可士

TRANSISTOR(PNP)

FEATURES ◾ High breakdown voltage

HTSEMI

金誉半导体

SOT-23 Plastic-Encapsulate Transistors

FEATURES . High breakdown voltage

DGNJDZ

南晶电子

2SA1179N

PNP / NPN Epitaxial Planar Silicon Transistor Features • Miniature package facilitates miniaturization in end products • High breakdown voltage

SANYO

三洋

Silicon PNP Power Transistors

文件:167 Kbytes Page:3 Pages

JMNIC

锦美电子

Silicon PNP Power Transistors

文件:167 Kbytes Page:3 Pages

JMNIC

锦美电子

Silicon PNP Epitaxial

HitachiHitachi Semiconductor

日立日立公司

Transistors>Amplifiers/Bipolar

RENESAS

瑞萨

PNP Transistors

文件:725.69 Kbytes Page:2 Pages

KEXIN

科信电子

PNP Transistors

文件:725.69 Kbytes Page:2 Pages

KEXIN

科信电子

Transistor-Bipolar Small Signal Transistors

RENESAS

瑞萨

PNP Transistors

文件:725.69 Kbytes Page:2 Pages

KEXIN

科信电子

Low Saturation Voltage

文件:92.83 Kbytes Page:2 Pages

ISC

无锡固电

Silicon Epitaxial Planar Transistor

文件:138.03 Kbytes Page:4 Pages

BILIN

银河微电

Silicon Epitaxial Planar Transistor

文件:166.21 Kbytes Page:4 Pages

BILIN

银河微电

SOT-23 BIPOLAR TRANSISTORS TRANSISTOR(PNP)

文件:295.75 Kbytes Page:2 Pages

RECTRON

丽正国际

Silicon Epitaxial Planar Transistor

文件:175.42 Kbytes Page:4 Pages

BILIN

银河微电

Low-Frequency General-Purpose Amplifier Applications

文件:58.61 Kbytes Page:5 Pages

SANYO

三洋

Silicon Epitaxial Planar Transistor

文件:166.21 Kbytes Page:4 Pages

BILIN

银河微电

PNP Transistors

文件:466.32 Kbytes Page:1 Pages

KEXIN

科信电子

Silicon Epitaxial Planar Transistor

文件:138.03 Kbytes Page:4 Pages

BILIN

银河微电

Low-Frequency General-Purpose Amp Applications

文件:433.33 Kbytes Page:7 Pages

SANYO

三洋

Low-Frequency General-Purpose Amp Applications

文件:40.67 Kbytes Page:4 Pages

SANYO

三洋

Low-Frequency General-Purpose Amp Applications

文件:40.67 Kbytes Page:4 Pages

SANYO

三洋

Low-Frequency General-Purpose Amp Applications

文件:433.33 Kbytes Page:7 Pages

SANYO

三洋

Bipolar Transistor

文件:418.37 Kbytes Page:7 Pages

ONSEMI

安森美半导体

封装/外壳:TO-236-3,SC-59,SOT-23-3 包装:卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带 描述:TRANS PNP 50V 0.15A 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个

ONSEMI

安森美半导体

封装/外壳:TO-236-3,SC-59,SOT-23-3 包装:散装 描述:TRANS PNP 50V 0.15A 3CP 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个

ONSEMI

安森美半导体

Bipolar Transistor

文件:418.37 Kbytes Page:7 Pages

ONSEMI

安森美半导体

2SA117产品属性

  • 类型

    描述

  • 型号

    2SA117

  • 制造商

    SAVANTIC

  • 制造商全称

    Savantic, Inc.

  • 功能描述

    Silicon PNP Power Transistors

更新时间:2025-10-30 14:49:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
PHI
25+23+
Sot-23
30609
绝对原装正品全新进口深圳现货
PHI
2023+
SOT-23
50000
原装现货
RENESAS
24+
SOT-23
16900
原装正品现货支持实单
RENESAS
原厂封装
9800
原装进口公司现货假一赔百
TOS
24+
SOT-23
21000
NEC
23+
SOT-23
56882
原厂授权代理,海外优势订货渠道。可提供大量库存,详
RENESAS
06+
SOT-23
6000
一级代理,专注军工、汽车、医疗、工业、新能源、电力
HITACHI
24+
NA/
4750
原装现货,当天可交货,原型号开票
RENESAS
2023+
SOT-23
8800
正品渠道现货 终端可提供BOM表配单。
NK/南科功率
2025+
SOT-23
986966
国产

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