找IC，尽在114IC

芯片资料
  • 芯片资料
  • 丝印反查
  • 库存查询
  • 行业新闻
  • 制造商
  • 替换型号
  • 晶体管

位置：首页 > IC中文资料 > 2SA109

2SA109晶体管资料

  • 2SA109别名：2SA109三极管、2SA109晶体管、2SA109晶体三极管

  • 2SA109生产厂家：日本富士通公司

  • 2SA109制作材料：Ge-PNP

  • 2SA109性质：调幅 （AM）_前置放大 （V）

  • 2SA109封装形式：直插封装

  • 2SA109极限工作电压：20V

  • 2SA109最大电流允许值：0.01A

  • 2SA109最大工作频率：45MHZ

  • 2SA109引脚数：3

  • 2SA109最大耗散功率：

  • 2SA109放大倍数：

  • 2SA109图片代号：D-58

  • 2SA109vtest：20

  • 2SA109htest：45000000

  • 2SA109atest：0.01

  • 2SA109wtest：0

  • 2SA109代换 2SA109用什么型号代替：AF124,AF125,AF126,AF200,2N3323,2N3324,2N3325,2SA218,2SA219,2SA220,2SA221,2SA222,2SA223,2SA224,2SA225,2SA226,2SA227,3AG54A,

型号 功能描述 生产厂家 企业 LOGO 操作
2SA1091

TRANSISTOR (HIGH VOLTAGE CONTROL APPLICATIONS PLASMA DISPLAY, NIXIE TUBE DRIVER, CATHODE RAY TUBE BRIGHTNESS CONTROL)

High Voltage Control Applications Plasma Display, Nixie Tube Driver Applications Cathode Ray Tube Brightness Control Applications • High voltage: VCBO = −300 V, VCEO = −300 V • Low saturation voltage: VCE (sat) = −0.5 V (max) • Small collector output capacitance: Cob = 6 pF (typ.) • Compleme

TOSHIBA

东芝

2SA1091

Silicon PNP transistor in a TO-92 Plastic Package

Descriptions Silicon PNP transistor in a TO-92 Plastic Package. Features High voltage, low saturation voltage, small collector output capacitance. Applications High voltage control, plasma display, nixie tube driver, cathode ray tube brightness control applications.

FOSHAN

蓝箭电子

2SA1091

isc Silicon PNP Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage -V(BR)CEO=-300V(Min) ·Collector-Emitter Saturation Voltage -VCE(sat)= -0.5V(Max) @IC= -20mA APPLICATIONS ·Designed for power amplifier,high speed switching and regulated power supply applications.

ISC

无锡固电

2SA1093

Silicon PNP Power Transistors

DESCRIPTION ·With TO-3P(I) package ·Complement to type 2SC2563 ·High transition frequency APPLICATIONS ·Audio frequency power amplifier applicatios

JMNIC

锦美电子

2SA1093

Silicon PNP Power Transistor

DESCRIPTION • Collector-Emitter Breakdown Voltage- :V(BR)CEO=-120V(Min.) • Good Linearity of hFE • Complement to Type 2SC2563 APPLICATIONS • Audio frequency power amplifier applications • Recommend for SOW audio amplifier output stage

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

2SA1093

SILICON PNP EPITAXIAL TYPE (PCT PROCESS)

TOSHIBA

东芝

2SA1093

Silicon PNP Power Transistors

DESCRIPTION ·With TO-3P(I) package ·Complement to type 2SC2563 ·High transition frequency APPLICATIONS ·Audio frequency power amplifier applicatios

SAVANTIC

2SA1093

Silicon PNP Power Transistors

DESCRIPTION ·With TO-3P(I) package ·Complement to type 2SC2563 ·High transition frequency APPLICATIONS ·Audio frequency power amplifier applicatios

ISC

无锡固电

2SA1094

Silicon PNP Power Transistors

DESCRIPTION ·With MT-200 package ·Complement to type 2SC2564 APPLICATIONS ·For power amplifier applications

SAVANTIC

2SA1094

Silicon PNP Power Transistors

DESCRIPTION ·With MT-200 package ·Complement to type 2SC2564 APPLICATIONS ·For power amplifier applications

JMNIC

锦美电子

2SA1094

Silicon PNP Power Transistors

DESCRIPTION ·With MT-200 package ·Complement to type 2SC2564 APPLICATIONS ·For power amplifier applications

ISC

无锡固电

2SA1095

Silicon PNP Power Transistors

DESCRIPTION ·With MT-200 package ·Complement to type 2SC2565 ·High breakdown voltage ·High transition frequency APPLICATIONS ·Power amplifier applications ·Recommended for 100W high-fidelity audio frequency amplifer output stage

JMNIC

锦美电子

2SA1095

Silicon PNP Power Transistors

DESCRIPTION ·With MT-200 package ·Complement to type 2SC2565 ·High breakdown voltage ·High transition frequency APPLICATIONS ·Power amplifier applications ·Recommended for 100W high-fidelity audio frequency amplifer output stage

ISC

无锡固电

2SA1095

Silicon PNP Power Transistors

DESCRIPTION ·With MT-200 package ·Complement to type 2SC2565 ·High breakdown voltage ·High transition frequency APPLICATIONS ·Power amplifier applications ·Recommended for 100W high-fidelity audio frequency amplifer output stage

SAVANTIC

2SA1096

Silicon PNP Power Transistors

DESCRIPTION ·With TO-126 package ·Complement to type 2SC2497/2SC2497A APPLICATIONS ·For low-frequency power amplification

JMNIC

锦美电子

2SA1096

Silicon PNP Power Transistors

DESCRIPTION ·With TO-126 package ·Complement to type 2SC2497/2SC2497A APPLICATIONS ·For low-frequency power amplification

ISC

无锡固电

2SA1096

Silicon PNP Power Transistors

DESCRIPTION · With TO-126 package ·Complement to type 2SC2497/2SC2497A APPLICATIONS ·For low-frequency power amplification

SAVANTIC

2SA1096

Silicon NPN epitaxial planar type(For low-frequency power amplification)

Silicon NPN epitaxial planar type, For low-frequency power amplification, Complementary to 2SA1096 and 2SA1096A Features 1. High collector to emitter voltage VCEO 2. TO-126B package which requires no insulation plate for installation to the heat sink

PANASONIC

松下

2SA1096

Silicon PNP Power Transistor

DESCRIPTION •High Collector-Emitter Breakdown Voltage- V(BR)CEo = -50V(Min) •Good Linearity of hFE •Complement to Type2SC2497 APPLICATIONS •Designed for low-frequency power amplification

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

2SA1096A

Silicon NPN epitaxial planar type(For low-frequency power amplification)

Silicon NPN epitaxial planar type, For low-frequency power amplification, Complementary to 2SA1096 and 2SA1096A Features 1. High collector to emitter voltage VCEO 2. TO-126B package which requires no insulation plate for installation to the heat sink

PANASONIC

松下

2SA1096A

Silicon PNP Power Transistors

DESCRIPTION · With TO-126 package ·Complement to type 2SC2497/2SC2497A APPLICATIONS ·For low-frequency power amplification

SAVANTIC

2SA1096A

Silicon PNP Power Transistors

DESCRIPTION ·With TO-126 package ·Complement to type 2SC2497/2SC2497A APPLICATIONS ·For low-frequency power amplification

JMNIC

锦美电子

2SA1096A

High Collector-Emitter Breakdown Voltage- V(BR)CEO= -60V (Min)

DESCRIPTION ·With TO-126 package ·Complement to type 2SC2497/2SC2497A APPLICATIONS ·For low-frequency power amplification

ISC

无锡固电

2SA1091

High Voltage Control Applications Plasma Display, Nixie Tube Driver Applications Cathode Ray Tube Brightness Control Applications

文件：654.3 Kbytes Page：4 Pages

TOSHIBA

东芝

2SA1091_07

High Voltage Control Applications Plasma Display, Nixie Tube Driver Applications Cathode Ray Tube Brightness Control Applications

文件：654.3 Kbytes Page：4 Pages

TOSHIBA

东芝

2SA1093

Silicon PNP Power Transistors

文件：160.99 Kbytes Page：3 Pages

JMNIC

锦美电子

2SA1093

Silicon PNP Power Transistors

文件：160.99 Kbytes Page：3 Pages

JMNIC

锦美电子

2SA1093_15

Silicon PNP Power Transistors

文件：160.99 Kbytes Page：3 Pages

JMNIC

锦美电子

2SA1094

SILICON PNP EPITAXIAL TRANSISTOR

文件：66.58 Kbytes Page：1 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

2SA1094

Silicon PNP Power Transistors

文件：173.58 Kbytes Page：3 Pages

JMNIC

锦美电子

2SA1094

Silicon PNP Power Transistor

文件：130.449 Kbytes Page：2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

2SA1094_15

Silicon PNP Power Transistors

文件：173.58 Kbytes Page：3 Pages

JMNIC

锦美电子

2SA1095

2SA1095

文件：69.19 Kbytes Page：1 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

2SA1095

Silicon PNP Power Transistors

文件：175.85 Kbytes Page：3 Pages

JMNIC

锦美电子

2SA1095

Silicon PNP Power Transistor

文件：130.34 Kbytes Page：2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

2SA1095

Trans GP BJT PNP 60V 2A 3-Pin TO-126B-A1

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

2SA1095_15

Silicon PNP Power Transistors

文件：175.85 Kbytes Page：3 Pages

JMNIC

锦美电子

2SA1096

Silicon PNP Power Transistors

文件：207.46 Kbytes Page：5 Pages

JMNIC

锦美电子

2SA1096

Trans GP BJT PNP 50V 2A 3-Pin TO-126B-A1

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

2SA1096_15

Silicon PNP Power Transistors

文件：207.46 Kbytes Page：5 Pages

JMNIC

锦美电子

2SA10960R

封装/外壳：TO-225AA，TO-126-3 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS PNP 50V 2A TO126B-A1 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

PANASONIC

松下

2SA1096A

Power Device - Power Transistors - Others

PANASONIC

松下

2SA1096A

Silicon PNP Power Transistor

文件：127.23 Kbytes Page：2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

2SA1096AQ

封装/外壳：TO-225AA，TO-126-3 包装：带盒（TB） 描述：TRANS PNP 60V 2A TO126B-A1 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

PANASONIC

松下

2SA109产品属性

  • 类型

    描述

  • Maximum Transition Frequency：

    150(Typ)MHz

  • Maximum Power Dissipation：

    1200mW

  • Maximum Operating Temperature：

    150°C

  • Maximum Emitter Base Voltage：

    5V

  • Maximum DC Collector Current：

    2A

  • Maximum Collector Emitter Voltage：

    60V

  • Maximum Collector Emitter Saturation Voltage：

    1@0.15A@1.5AV

  • Maximum Collector Base Voltage：

    70V

  • Material：

    Si

  • Configuration：

    Single

  • Category：

    Bipolar Power

2SA109供应商更多...

更新时间：2026-5-14 16:50:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
深圳市华斯顿科技有限公司
2SA1096A-R
PANASONIC
25+23+
New
32779
绝对原装正品现货,全新深圳原装进口现货
询价
深圳市科芯源微电子有限公司
2SA1106
SANKEN
2026+
TO-3P
54648
百分百原装现货 实单必成 欢迎询价
询价
深圳市向鸿伟业电子有限公司
2SA1106
SPTECH质超
2407+
TO-3
30098
全新原装!仓库现货,大胆开价!
询价
深圳市创新迹电子有限公司
2SA1104A1104
SANKEN
22+
TO-3P
20000
公司只有原装 品质保证
询价
上海金庆电子技术有限公司
2SA1102=A1102
SANKEN
2023+
TO-3P
540
全新 发货1-2天
询价
深圳市一线半导体有限公司
2SA1096
24+
TO-126
10000
全新
询价
深圳市卓越微芯电子有限公司
2SA1096-R
25+
T0
200
百分百原装正品 真实公司现货库存 本公司只做原装 可
询价
艾睿（深圳）半导体有限公司
2SA1106
SPTECH
2447
TO-3PN
105000
30个/管一级代理专营品牌!原装正品,优势现货,长期
询价
深圳市河锋鑫科技有限公司
2SA1102
SANKEN
TO-3P
22+
6000
十年配单,只做原装
询价
深圳市弘为电子有限公司
2SA1102
SK
24+
原厂封装
4000
原装现货假一罚十
询价

2SA109芯片相关品牌

2SA109规格书下载地址

2SA109参数引脚图相关

2SA109数据表相关新闻

DdatasheetPDF页码索引

新数据|IC资料索引|IC关键词|IC库存|IC中文资料|关于我们|联系我们

Copyright © 2003-2026 www.114ic.cn All Rights Reserved 网站备案: 粤ICP备05011613号 粤公网安备 44030402000933号

声明：本站所有资料均来自互联网及网友提供，仅供学习和研究使用，无任何商业目的，版权归原作如有侵权请联系QQ：303638005，本站马上更正

字母索引：ABCDEFGHIJKLMNOPQRSTUVWXYZ0123456789

深圳市市场监督管理局企业主体身份公示