Silicon NPN epitaxial planar type(For low-frequency power amplification)

Silicon NPN epitaxial planar type, For low-frequency power amplification, Complementary to 2SA1096 and 2SA1096A Features 1. High collector to emitter voltage VCEO 2. TO-126B package which requires no insulation plate for installation to the heat sink

Silicon PNP Power Transistors

DESCRIPTION · With TO-126 package ·Complement to type 2SC2497/2SC2497A APPLICATIONS ·For low-frequency power amplification

Silicon PNP Power Transistors

DESCRIPTION ·With TO-126 package ·Complement to type 2SC2497/2SC2497A APPLICATIONS ·For low-frequency power amplification

High Collector-Emitter Breakdown Voltage- V(BR)CEO= -60V (Min)

DESCRIPTION ·With TO-126 package ·Complement to type 2SC2497/2SC2497A APPLICATIONS ·For low-frequency power amplification

Silicon PNP Power Transistor

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Power Device - Power Transistors - Others

Silicon PNP epitaxial planar type

For low-frequency power amplification\nComplementary to 2SC2497, 2SC2497A\n\n■ •Output of 5 W can be obtained by a complementary pair with 2SC2497 and 2SC2497A\n•TO-126B package which requires no insulation plate for installation to the heat sink;

封装/外壳：TO-225AA，TO-126-3 包装：带盒（TB） 描述：TRANS PNP 60V 2A TO126B-A1 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

Silicon NPN epitaxial planar type(For low-frequency power amplification)

Silicon NPN epitaxial planar type, For low-frequency power amplification, Complementary to 2SA1096 and 2SA1096A Features 1. High collector to emitter voltage VCEO 2. TO-126B package which requires no insulation plate for installation to the heat sink

Silicon PNP Power Transistors

DESCRIPTION ·With TO-126 package ·Complement to type 2SC2497/2SC2497A APPLICATIONS ·For low-frequency power amplification

Silicon PNP Power Transistors

DESCRIPTION · With TO-126 package ·Complement to type 2SC2497/2SC2497A APPLICATIONS ·For low-frequency power amplification