PNP Epitaxial Silicon Transistor

Features • Lead Free Finish/Rohs Compliant (PSuffix designates RoHS Compliant. See ordering information) • Capable of 0.9Watts of Power Dissipation. • Collector-current -1.0A • Collector-base Voltage -160V • Operating and storage junction temperature range: -55°C to +150°C • Epoxy meets

PNP Transistors

■ Features ● High voltage ● Large continuous collector current capability

PNP Epitaxial Silicon Transistor

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PNP Transistors

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中等功率双极型晶体管

PNP Plastic Encapsulated Transistor

FEATURE ● High Voltage： VCEO= -160V ● Large Continuous Collector Current Capability ● Complementary to 2SC2383

isc Silicon PNP Transistor

DESCRIPTION • High Voltage and High Current Vceo=-160V(Min.） • Excellent hFE Linearity • Low Noise • Complement to Type 2SC2383 • Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS • Audio frequency general purpose amplifier Applications

TRANSISTOR (COLOR TV VERT. DEFELCTION OUTPUT APPLICATIONS)

Color TV Verttical Deflection Output Applications Power Switching Applications • High voltage: VCEO = −160 V • Large continuous collector current capability • Recommended for vertical deflection output & sound output applications for line-operated TV. • Complementary to 2SC2383.

TO 92MOD PLASTIC ENCAPSULATE TRANSISTORS

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Color TV Verttical Deflection Output Applications Power Switching Applications

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PNP Epitaxial Silicon Transistor

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封装/外壳：TO-226-3，TO-92-3 长基体（成形引线） 包装：卷带（TR） 描述：TRANS PNP 160V 1A TO92MOD 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个