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2SA101晶体管资料
2SA101别名:2SA101三极管、2SA101晶体管、2SA101晶体三极管
2SA101生产厂家:日本松下公司
2SA101制作材料:Ge-PNP
2SA101性质:射频/高频放大 (HF)_中频放大 (ZF)
2SA101封装形式:直插封装
2SA101极限工作电压:40V
2SA101最大电流允许值:0.01A
2SA101最大工作频率:15MHZ
2SA101引脚数:3
2SA101最大耗散功率:
2SA101放大倍数:
2SA101图片代号:C-47
2SA101vtest:40
2SA101htest:15000000
- 2SA101atest:0.01
2SA101wtest:0
2SA101代换 2SA101用什么型号代替:AF124,AF125,AF126,AF127,AF200,2N3323,2N3324,2N3325,2SA218,2SA219,2SA220,2SA221,2SA222,2SA223,2SA224,2SA225,2SA226,2SA227,3AG95A,
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
2SA101 | Ge PNP Drift RF Amplifier IF Amplifier Features • High fαb | ETCList of Unclassifed Manufacturers 未分类制造商 | ||
2SA101 | Ge PNP Drift | ETC 知名厂家 | ETC | |
Silicon PNP transistor in a TO-220 Plastic Package. Descriptions Silicon PNP transistor in a TO-220 Plastic Package. Features Low VCE(sat),fast switching speed, complementary pair with 2SC2334. Applications Use for high voltage high speed switching, for a drive in devices such as switching regulators, DC/DC converters, high frequency pow | FOSHAN 蓝箭电子 | |||
isc Silicon PNP Power Transistor DESCRIPTION ·Low Collector Saturation Voltage ·Fast Switching Speed ·Complement to Type 2SC2334 APPLICATIONS ·Developed for high-voltage high-speed switching, and is ideal for use as a driver in devices such as switching reglators, DC/DC converters, and high frequency power | ISC 无锡固电 | |||
Silicon PNP Power Transistors DESCRIPTION ·With TO-220 package ·Complement to type 2SC2334 ·Low collector saturation voltage ·Fast switching speed APPLICATIONS ·Switching regulators ·DC/DC converters ·High frequency power amplifiers | JMNIC 锦美电子 | |||
Silicon PNP Power Transistors DESCRIPTION ·With TO-220 package ·Complement to type 2SC2334 ·Low collector saturation voltage ·Fast switching speed APPLICATIONS ·Switching regulators ·DC/DC converters ·High frequency power amplifiers | SAVANTIC | |||
Silicon PNP Power Transistor DESCRIPTION • Low Collector Saturation Voltage • Fast Switching Speed • Complement to Type 2SC2334 APPLICATIONS • Developed for high-voltage high-speed switching, and is ideal for use as a driver in devices such as switching regulators, DC/DC converters, and high frequency power ampli | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | |||
SILICON POWER TRANSISTOR PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-VOLTAGE HIGH-SPEED SWITCHING The 2SA1010 is a mold power transistor developed for high voltage high-speed switching, and is ideal for use as a driver in devices such as switching regulators, DC/DC converters, and high frequency power amplifiers. FEATURE | NEC 瑞萨 | |||
High-Voltage Switching, AF Power Amp, 100W Output Predriver Applications High-Voltage Switching, AF Power Amp, 100W Output Predriver Applications | SANYO 三洋 | |||
POWER TRANSISTORS(1.5A,160V,25W) 1.5 AMPERE POWER TRANSISTORS 160 VOLTS 25 WATTS | MOSPEC 统懋 | |||
Silicon PNP Power Transistors DESCRIPTION • With TO-220 package • Complement to type 2SC2344 APPLICATIONS • High voltage switching , • Audio frequency power amplifier; • 100W output predriver applications | SAVANTIC | |||
Silicon PNP Power Transistor DESCRIPTION • Low Collector Saturation Voltage- : VCE(satr -0.5V(Typ.)@ lc= -0.5A • Collector-Emitter Breakdown Voltage- : V(BR)CEo=-160V(Min.) • Complement to Type 2SC2344 APPLICATIONS • Designed for high-voltage switching, audio frequency power amplifiers, 100W output predriver applications | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | |||
PNP EPITAXIAL SILICON TRANSISTOR(LOW FREQUENCY POWER AMPLIFIER) LOW FREQUENCY POWER AMPLIFIER ● Complement to 2SC2073 | WINGS 永盛电子 | |||
Silicon PNP Power Transistors DESCRIPTION • With TO-220 package • Complement to type 2SC2344 APPLICATIONS • High voltage switching , • Audio frequency power amplifier; • 100W output predriver applications | JMNIC 锦美电子 | |||
sc Silicon PNP Power Transistor DESCRIPTION ·Low Collector Saturation Voltage- : VCE(sat)= -0.5V(Typ.)@ IC= -0.5A ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -160V(Min.) ·Complement to Type 2SC2344 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high- | ISC 无锡固电 | |||
Silicon PNP Power Transistors DESCRIPTION • With TO-220 package • Complement to type 2SC2344 APPLICATIONS • High voltage switching , • Audio frequency power amplifier; • 100W output predriver applications | ISC 无锡固电 | |||
Silicon PNP transistor in a TO-220 Plastic Package. Descriptions Silicon PNP transistor in a TO-220 Plastic Package. Features Complementary pair with 2SC2344. Applications High voltage switching, AF power amplifier, 100W output predriver applications. | FOSHAN 蓝箭电子 | |||
High-Voltage Switching, AF Power Amp,100W Output Predriver Applications High-Voltage Switching, AF Power Amp, 100W Output Predriver Applications | SANYO 三洋 | |||
TRANSISITOR (HIGH CURRENT SWITCHING APPLICATIONS) HIGH CURRENT SWITCHING APPLICATIONS. ■ FEATURES * Low collector saturation voltage VCE(SAT)=-0.4V(max.) at Ic=-3A * High speed switching time: tS=1.0µs(Typ.) * Complementary to 2SC2562 | TOSHIBA 东芝 | |||
HIGH CURRENT SWITCHING APPLICATION FEATURES * Low Collector Saturation Voltage VCE(SAT)=-0.4V(max.) At Ic=-3A * High Speed Switching Time: tS=1.0μs(Typ.) * Complementary To 2SC2562 | UTC 友顺 | |||
POWER TRANSISTORS(5A,50V,25W) 5 AMPERES POWER TRANSISTORS 50 VOLTS 25 WATTS | MOSPEC 统懋 | |||
PNP Epitaxial Silicon Transistor FEATURES ● Low Collector Saturation Voltage. VCE(sat)=-0.4V(Max.)at IC=-3A ● Complements the 2SC2562. ● High Speed Switching Time:tstg=1.0µs(Typ.) | BILIN 银河微电 | |||
PNP Plastic-Encapsulate Transistor Features • Halogen free available upon request by adding suffix -HF • Mounting Torgue: 5 in-lbs Maximum • Capable of 25 Watts of Power Dissipation. • Collector-current -5.0A and Collector-base Voltage -60V • Operating and storage junction temperature range: -55°C to +150°C • Lead Free Finish | MCC | |||
Silicon PNP transistor in a TO-220 Plastic Package. Descriptions Silicon PNP transistor in a TO-220 Plastic Package. Features Low collector saturation voltage, high speed switching time, complementary to 2SC2562. Applications High current switching applications. | FOSHAN 蓝箭电子 | |||
TO-220-3L Plastic-Encapsulate Transistors TRANSISTOR (PNP) FEATURES ● High Current Switching Applications ● Low Collector Saturation Voltage ● High Speed Swithing Time | JIANGSU 长电科技 | |||
isc Silicon PNP Power Transistor DESCRIPTION ·Low Collector Saturation Voltage :VCE(sat)= -0.4(V)(Max)@IC= -3A ·High Switching Speed ·Complement to Type 2SC2562 APPLICATIONS ·Designed for high current switching applications. | ISC 无锡固电 | |||
Silicon PNP Transistors Silicon PNP Transistors ♦ Features • With TO-220 package • Complementary to 2SC2562 | JMNIC 锦美电子 | |||
TO-220-3L Plastic-Encapsulate Transistors FEATURES High Current Switching Applications Low Collector Saturation Voltage High Speed Swithing Time | DGNJDZ 南晶电子 | |||
TRANSISTOR (PNP) FEATURES ● HIGH CURRENT SWITCHING APPLICATIONS. ● Low Collector Saturation Voltage : VCE(SAT) = - 0.4V(MAX) at IC= - 3A ● High Speed Swithing Time : tstg = 1.0us (Typ.) ● Complementary to 2SC2562 | KOOCHIN 灏展电子 | |||
Silicon PNP Power Transistors DESCRIPTION ·With TO-220 package ·Complement to type 2SD2562 ·Low saturation voltage ·High speed switching time APPLICATIONS ·High current switching applications | SAVANTIC | |||
Silicon PNP Power Transistor DESCRIPTION • Low Collector Saturation Voltage :VCE(sat)= -0.4(V)(Max)@IC= -3A • High Switching Speed • Complement to Type 2SC2562 APPLICATIONS • Designed for high current switching applications. | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | |||
PNP Silicon Epitaxial Planar Transistor PNP Silicon Epitaxial Planar Transistor for high current switching applications. The transistor is subdivided into two group, O and Y, according to its DC current gain. | SEMTECH_ELEC 先之科半导体 | |||
HIGH CURRENT SWITCHING APPLICATION FEATURES * Low Collector Saturation Voltage VCE(SAT)=-0.4V(max.) At Ic=-3A * High Speed Switching Time: tS=1.0μs(Typ.) * Complementary To 2SC2562 | UTC 友顺 | |||
HIGH CURRENT SWITCHING APPLICATION FEATURES * Low Collector Saturation Voltage VCE(SAT)=-0.4V(max.) At Ic=-3A * High Speed Switching Time: tS=1.0μs(Typ.) * Complementary To 2SC2562 | UTC 友顺 | |||
HIGH CURRENT SWITCHING APPLICATION FEATURES * Low Collector Saturation Voltage VCE(SAT)=-0.4V(max.) At Ic=-3A * High Speed Switching Time: tS=1.0μs(Typ.) * Complementary To 2SC2562 | UTC 友顺 | |||
HIGH CURRENT SWITCHING APPLICATION FEATURES * Low Collector Saturation Voltage VCE(SAT)=-0.4V(max.) At Ic=-3A * High Speed Switching Time: tS=1.0μs(Typ.) * Complementary To 2SC2562 | UTC 友顺 | |||
HIGH CURRENT SWITCHING APPLICATION FEATURES * Low Collector Saturation Voltage VCE(SAT)=-0.4V(max.) At Ic=-3A * High Speed Switching Time: tS=1.0μs(Typ.) * Complementary To 2SC2562 | UTC 友顺 | |||
HIGH CURRENT SWITCHING APPLICATION FEATURES * Low Collector Saturation Voltage VCE(SAT)=-0.4V(max.) At Ic=-3A * High Speed Switching Time: tS=1.0μs(Typ.) * Complementary To 2SC2562 | UTC 友顺 | |||
HIGH CURRENT SWITCHING APPLICATION FEATURES * Low Collector Saturation Voltage VCE(SAT)=-0.4V(max.) At Ic=-3A * High Speed Switching Time: tS=1.0μs(Typ.) * Complementary To 2SC2562 | UTC 友顺 | |||
HIGH CURRENT SWITCHING APPLICATION FEATURES * Low Collector Saturation Voltage VCE(SAT)=-0.4V(max.) At Ic=-3A * High Speed Switching Time: tS=1.0μs(Typ.) * Complementary To 2SC2562 | UTC 友顺 | |||
HIGH CURRENT SWITCHING APPLICATION FEATURES * Low Collector Saturation Voltage VCE(SAT)=-0.4V(max.) At Ic=-3A * High Speed Switching Time: tS=1.0μs(Typ.) * Complementary To 2SC2562 | UTC 友顺 | |||
HIGH CURRENT SWITCHING APPLICATION FEATURES * Low Collector Saturation Voltage VCE(SAT)=-0.4V(max.) At Ic=-3A * High Speed Switching Time: tS=1.0μs(Typ.) * Complementary To 2SC2562 | UTC 友顺 | |||
HIGH CURRENT SWITCHING APPLICATION FEATURES * Low Collector Saturation Voltage VCE(SAT)=-0.4V(max.) At Ic=-3A * High Speed Switching Time: tS=1.0μs(Typ.) * Complementary To 2SC2562 | UTC 友顺 | |||
HIGH CURRENT SWITCHING APPLICATION FEATURES * Low Collector Saturation Voltage VCE(SAT)=-0.4V(max.) At Ic=-3A * High Speed Switching Time: tS=1.0μs(Typ.) * Complementary To 2SC2562 | UTC 友顺 | |||
HIGH CURRENT SWITCHING APPLICATION FEATURES * Low Collector Saturation Voltage VCE(SAT)=-0.4V(max.) At Ic=-3A * High Speed Switching Time: tS=1.0μs(Typ.) * Complementary To 2SC2562 | UTC 友顺 | |||
HIGH CURRENT SWITCHING APPLICATION FEATURES * Low Collector Saturation Voltage VCE(SAT)=-0.4V(max.) At Ic=-3A * High Speed Switching Time: tS=1.0μs(Typ.) * Complementary To 2SC2562 | UTC 友顺 | |||
HIGH CURRENT SWITCHING APPLICATION FEATURES * Low Collector Saturation Voltage VCE(SAT)=-0.4V(max.) At Ic=-3A * High Speed Switching Time: tS=1.0μs(Typ.) * Complementary To 2SC2562 | UTC 友顺 | |||
HIGH CURRENT SWITCHING APPLICATION FEATURES * Low Collector Saturation Voltage VCE(SAT)=-0.4V(max.) At Ic=-3A * High Speed Switching Time: tS=1.0μs(Typ.) * Complementary To 2SC2562 | UTC 友顺 | |||
HIGH CURRENT SWITCHING APPLICATION FEATURES * Low Collector Saturation Voltage VCE(SAT)=-0.4V(max.) At Ic=-3A * High Speed Switching Time: tS=1.0μs(Typ.) * Complementary To 2SC2562 | UTC 友顺 | |||
HIGH CURRENT SWITCHING APPLICATION FEATURES * Low Collector Saturation Voltage VCE(SAT)=-0.4V(max.) At Ic=-3A * High Speed Switching Time: tS=1.0μs(Typ.) * Complementary To 2SC2562 | UTC 友顺 | |||
HIGH CURRENT SWITCHING APPLICATION FEATURES * Low Collector Saturation Voltage VCE(SAT)=-0.4V(max.) At Ic=-3A * High Speed Switching Time: tS=1.0μs(Typ.) * Complementary To 2SC2562 | UTC 友顺 | |||
HIGH CURRENT SWITCHING APPLICATION FEATURES * Low Collector Saturation Voltage VCE(SAT)=-0.4V(max.) At Ic=-3A * High Speed Switching Time: tS=1.0μs(Typ.) * Complementary To 2SC2562 | UTC 友顺 | |||
HIGH CURRENT SWITCHING APPLICATION FEATURES * Low Collector Saturation Voltage VCE(SAT)=-0.4V(max.) At Ic=-3A * High Speed Switching Time: tS=1.0μs(Typ.) * Complementary To 2SC2562 | UTC 友顺 | |||
HIGH CURRENT SWITCHING APPLICATION FEATURES * Low Collector Saturation Voltage VCE(SAT)=-0.4V(max.) At Ic=-3A * High Speed Switching Time: tS=1.0μs(Typ.) * Complementary To 2SC2562 | UTC 友顺 | |||
HIGH CURRENT SWITCHING APPLICATION FEATURES * Low Collector Saturation Voltage VCE(SAT)=-0.4V(max.) At Ic=-3A * High Speed Switching Time: tS=1.0μs(Typ.) * Complementary To 2SC2562 | UTC 友顺 | |||
HIGH CURRENT SWITCHING APPLICATION FEATURES * Low Collector Saturation Voltage VCE(SAT)=-0.4V(max.) At Ic=-3A * High Speed Switching Time: tS=1.0μs(Typ.) * Complementary To 2SC2562 | UTC 友顺 | |||
HIGH CURRENT SWITCHING APPLICATION FEATURES * Low Collector Saturation Voltage VCE(SAT)=-0.4V(max.) At Ic=-3A * High Speed Switching Time: tS=1.0μs(Typ.) * Complementary To 2SC2562 | UTC 友顺 | |||
HIGH CURRENT SWITCHING APPLICATION FEATURES * Low Collector Saturation Voltage VCE(SAT)=-0.4V(max.) At Ic=-3A * High Speed Switching Time: tS=1.0μs(Typ.) * Complementary To 2SC2562 | UTC 友顺 | |||
HIGH CURRENT SWITCHING APPLICATION FEATURES * Low Collector Saturation Voltage VCE(SAT)=-0.4V(max.) At Ic=-3A * High Speed Switching Time: tS=1.0μs(Typ.) * Complementary To 2SC2562 | UTC 友顺 | |||
HIGH CURRENT SWITCHING APPLICATION FEATURES * Low Collector Saturation Voltage VCE(SAT)=-0.4V(max.) At Ic=-3A * High Speed Switching Time: tS=1.0μs(Typ.) * Complementary To 2SC2562 | UTC 友顺 |
2SA101产品属性
- 类型
描述
- 型号
2SA101
- 制造商
Panasonic Industrial Company
- 功能描述
TRANS(PA) RQ102
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
TWGMC臺灣迪嘉 |
25+ |
SOT23 |
36000 |
TWGMC臺灣迪嘉原装现货2SA1015即刻询购立享优惠#长期有排单订 |
|||
蓝箭 |
TO92LM |
1000000 |
2012 |
||||
SAMSUNG/三星 |
25+ |
TO220 |
54648 |
百分百原装现货 实单必成 欢迎询价 |
|||
UTC/友顺 |
22+ |
TO-220 |
20000 |
只做原装正品 |
|||
NEC |
23+ |
TO-220 |
5000 |
专做原装正品,假一罚百! |
|||
NEC |
25+ |
TO-220 |
6500 |
十七年专营原装现货一手货源,样品免费送 |
|||
25+ |
500 |
公司现货库存 |
|||||
NEC |
25+ |
TO-TO-220 |
35400 |
独立分销商 公司只做原装 诚心经营 免费试样正品保证 |
|||
TOSHIBA/东芝 |
11+ |
明嘉莱只做原装正品现货 |
2510000 |
TO-92 |
|||
KEC |
21+ |
TO-92 |
120000 |
长期代理优势供应 |
2SA101芯片相关品牌
2SA101规格书下载地址
2SA101参数引脚图相关
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- 2SA1019
- 2SA1018
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- 2SA1015LT1
- 2SA1015
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- 2SA1012
- 2SA1011
- 2SA1010
- 2SA1009A
- 2SA1009
- 2SA1008
- 2SA1007(A)
- 2SA1007
- 2SA1006B
- 2SA1006A
- 2SA1006
- 2SA1005
- 2SA1004
- 2SA1003
- 2SA1002
- 2SA1001
- 2SA100
- 2SA-10
- 2SA0963
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- 2SA0914
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- 2SA0720
- 2SA0719
- 2S99
- 2S98
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- 2S95
- 2S93A
2SA101数据表相关新闻
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2023-2-162RL090M-6
商品目录 气体放电管(GDT) 直流击穿电压(最小值) - 脉冲放电电流 5kA 极间电容 1pF 电极数 2 直流击穿电压(最大值) - 精度 ±20%_ 直流击穿电压(典型值) 90V
2021-7-72R5TPF330MFL 深圳市得捷芯城电子科技 AVX KEMET 尼康 三洋 钽电容代理商
2R5TPF330MFL 深圳市得捷芯城电子科技 AVX KEMET 尼康 三洋 钽电容代理商
2020-8-42RP600L-8气体放电管 2RP600L-8君耀品牌 技术参数
2RP600L-8气体放电管 2RP600L-8君耀品牌 技术参数
2020-5-82SA1015-Y-AP(原厂授权中国分销商)
主要参数: 分立半导体产品 电流 - 集电极(Ic)(最大值): 150mA 电压 - 集射极击穿(最大值): 50V 电流(最大值) :100nA(ICBO) DC 电流增益(hFE)(最小值): 120 功率 - 最大值: 400MW 频率 - 跃迁: 80MHz 工作温度 :-55°C ~ 125°C 安装类型: 通孔 封装: TO-226-3, TO-92-3
2020-3-6
DdatasheetPDF页码索引
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