包装：散装 描述：TWEEZER POINTED MEDIUM 4.50\ 工具 镊子

Silicon PNP epitaxial planar type

SiliconPNPepitaxialplanartype Forlow-frequencypoweramplificationanddriveramplification Complementaryto2SC1383,2SC1384 ■Features •Allowingsupplywiththeradialtaping

Silicon PNP epitaxial planar type

SiliconPNPepitaxialplanartype Forlow-frequencypoweramplificationanddriveramplification Complementaryto2SC1383,2SC1384 ■Features •Allowingsupplywiththeradialtaping

For low-frequency power amplification and driver amplification Complementary

SiliconPNPepitaxialplanartype Forlow-frequencypoweramplificationanddriveramplification Complementaryto2SC1317,2SC1318 ■Features ●Complementarypairwith2SC1317and2SC1318

For low-frequency power amplification and driver amplification Complementary

SiliconPNPepitaxialplanartype Forlow-frequencypoweramplificationanddriveramplification Complementaryto2SC1317,2SC1318 ■Features ●Complementarypairwith2SC1317and2SC1318

For low-frequency driver amplification Complementary

Forlow-frequencydriveramplification Complementaryto2SC1318A ■Features •Highcollector-emittervoltage(Baseopen)VCEO •Optimumforthedriverstageofalow-frequencyand25Wto30Woutputamplifier

For low-frequency driver amplification Complementary

SiliconPNPepitaxialplanartype Forlow-frequencydriveramplification Complementaryto2SC1509 ■Features •Highcollector-emittervoltage(Baseopen)VCEO •Optimumforthedriverstageofalow-frequencyand25Wto30Woutputamplifier.

For general amplification Complementary to 2SC1573

SiliconPNPepitaxialplanartype Forgeneralamplification Complementaryto2SC1573 ■Features •Highcollector-emittervoltage(Baseopen)VCEO

Silicon PNP epitaxial planar type

SiliconPNPepitaxialplanartype Forlow-frequencypoweramplification Complementaryto2SC1846 ■Features •Outputof3Wcanbeobtainedbyacomplementarypairwith2SC1846 •TO-126Bpackagewhichrequiresnoinsulationplateforinstallationtotheheatsink

For low-frequency power amplification

SiliconPNPepitaxialplanartype Forlow-frequencypoweramplification Complementaryto2SC1846 ■Features •Outputof3Wcanbeobtainedbyacomplementarypairwith2SC1846 •TO-126Bpackagewhichrequiresnoinsulationplateforinstallationtotheheatsink

For low-frequency Power amplification Complementary

SiliconPNPepitaxialplanartype Forlow-frequencyPoweramplification Complementaryto2SC1868 ■Features •Lowcollector-emittersaturationvoltageVCE(sat) •TO-126Bpackagewhichrequiresnoinsulationplateforinstallationtotheheatsink

For audio system/pli drive

SiliconPNPepitaxialplanartype Foraudiosystem/plidriveComplementaryto2SC1953 ■Features •Acomplementarypairwith2SC1953,isoptimumforthepredriverstageofa60Wto100Woutputamplifier •TO-126Bpackagewhichrequiresnoinsulationplateforinstallationtothehe

For high breakdown voltage low-noise amplification Complementary

Forhighbreakdownvoltagelow-noiseamplification Complementaryto2SC1980 ■Features •Highcollector-emittervoltage(Baseopen)VCEO •LownoisevoltageNV

For low-frequency power amplification

SiliconPNPepitaxialplanartype Forlow-frequencypoweramplification Complementaryto2SC2209 ■Features •LargecollectorpowerdissipationPC •Outputof4Wto5Wcanbeobtainedbyacomplementarypairwith2SC2209

Ge PNP Drift

RFAmplifierIFAmplifier Features •Highfαb

PNP/NPN SILICON EPITAXIAL TRANSISTOR

PNP/NPNSiliconEpitaxialTransistor(EBT) AudioFrequencyPowerAmplifier HighFrequencyPowerAmplifier

Silicon PNP Power Transistors

DESCRIPTION ·WithTO-220package ·Complementtotype2SC2336,2SC2336A,2SC2336B APPLICATIONS ·Audiofrequencypoweramplifier ·Highfrequencypoweramplifier

Silicon PNP Power Transistors

DESCRIPTION ·WithTO-220package ·Complementtotype2SC2336,2SC2336A,2SC2336B APPLICATIONS ·Audiofrequencypoweramplifier ·Highfrequencypoweramplifier

PNP/NPN SILICON EPITAXIAL TRANSISTOR

PNP/NPNSiliconEpitaxialTransistor(EBT) AudioFrequencyPowerAmplifier HighFrequencyPowerAmplifier

isc Silicon PNP Power Transistor

DESCRIPTION ·WithTO-220package ·Complementtotype2SC2336,2SC2336A,2SC2336B APPLICATIONS ·Audiofrequencypoweramplifier ·Highfrequencypoweramplifier

Silicon PNP Power Transistors

DESCRIPTION ·WithTO-220package ·Complementtotype2SC2336,2SC2336A,2SC2336B APPLICATIONS ·Audiofrequencypoweramplifier ·Highfrequencypoweramplifier

PNP/NPN SILICON EPITAXIAL TRANSISTOR

PNP/NPNSiliconEpitaxialTransistor(EBT) AudioFrequencyPowerAmplifier HighFrequencyPowerAmplifier

Silicon PNP Power Transistors

DESCRIPTION ·WithTO-220package ·Complementtotype2SC2336,2SC2336A,2SC2336B APPLICATIONS ·Audiofrequencypoweramplifier ·Highfrequencypoweramplifier

isc Silicon PNP Power Transistor

DESCRIPTION ·WithTO-220package ·Complementtotype2SC2336,2SC2336A,2SC2336B APPLICATIONS ·Audiofrequencypoweramplifier ·Highfrequencypoweramplifier

Silicon PNP Power Transistor

DESCRIPTION •LowCollectorSaturationVoltage-:VcEjsatr-0.6V(Max.)@lc=-1A •FastSwitchingSpeed •ComplementtoType2SC2331 APPLICATIONS •Designedforuseasadriverindevicessuchasswitchingregulators,DC/DCconverters,andhigh-frequencypoweramplifiers.

SILICON POWER TRANSISTOR

PNPSILICONEPITAXIALTRANSISTOR FORHIGH-SPEEDSWITCHING FEATURES •Lowcollectorsaturationvoltage •Fastswitchingspeed •Complementarytransistor:2SC2331

SILICON POWER TRANSISTOR

PNPSILICONEPITAXIALTRANSISTORFORHIGH-SPEEDSWITCHING The2SA1008isamoldpowertransistordevelopedforhigh-speedswitching,andisidealforuseasadriverindevicessuchasswitchingregulators,DC/DCconverters,andhigh-frequencypoweramplifiers. FEATURES •Lowcollectorsaturati

Silicon PNP Power Transistors

DESCRIPTION •WithTO-220package •Complementtotype2SC2331 •Lowcollectorsaturationvoltage •Fastswitchingspeed APPLICATIONS •Switchingregulators •DC/DCconverters •Highfrequencypoweramplifiers

Silicon PNP Power Transistors

DESCRIPTION •WithTO-220package •Complementtotype2SC2331 •Lowcollectorsaturationvoltage •Fastswitchingspeed APPLICATIONS •Switchingregulators •DC/DCconverters •Highfrequencypoweramplifiers

Silicon PNP Power Transistors

DESCRIPTION •WithTO-220package •Complementtotype2SC2331 •Lowcollectorsaturationvoltage •Fastswitchingspeed APPLICATIONS •Switchingregulators •DC/DCconverters •Highfrequencypoweramplifiers

PNP SILICON POWER TRANSISTORS

SEMICONDUCTORSELECTIONGUIDE Microcomputer ICMemory Semi-CustomIC ParticularPurposeIC GeneralPurposeLinearIC Transistor/Diode/Thyristor MicrowaveDevice/ConsumerUseHighFrequencyDevice OpticalDevice Packages Index(QuickReferencebyTypeN

PNP SILICON POWER TRANSISTORS

SEMICONDUCTORSELECTIONGUIDE Microcomputer ICMemory Semi-CustomIC ParticularPurposeIC GeneralPurposeLinearIC Transistor/Diode/Thyristor MicrowaveDevice/ConsumerUseHighFrequencyDevice OpticalDevice Packages Index(QuickReferencebyTypeN

Ge PNP Drift

RFAmplifierIFAmplifier Features •Highfαb

SILICON POWER TRANSISTOR

PNPSILICONEPITAXIALTRANSISTORFORHIGH-VOLTAGEHIGH-SPEEDSWITCHING The2SA1010isamoldpowertransistordevelopedforhighvoltagehigh-speedswitching,andisidealforuseasadriverindevicessuchasswitchingregulators,DC/DCconverters,andhighfrequencypoweramplifiers. FEATURE

Silicon PNP Power Transistors

DESCRIPTION ·WithTO-220package ·Complementtotype2SC2334 ·Lowcollectorsaturationvoltage ·Fastswitchingspeed APPLICATIONS ·Switchingregulators ·DC/DCconverters ·Highfrequencypoweramplifiers

isc Silicon PNP Power Transistor

DESCRIPTION ·LowCollectorSaturationVoltage ·FastSwitchingSpeed ·ComplementtoType2SC2334 APPLICATIONS ·Developedforhigh-voltagehigh-speedswitching,andisidealforuseasadriverindevicessuchasswitchingreglators,DC/DCconverters,andhighfrequencypower

Silicon PNP Power Transistors

DESCRIPTION ·WithTO-220package ·Complementtotype2SC2334 ·Lowcollectorsaturationvoltage ·Fastswitchingspeed APPLICATIONS ·Switchingregulators ·DC/DCconverters ·Highfrequencypoweramplifiers

Silicon PNP Power Transistor

DESCRIPTION •LowCollectorSaturationVoltage •FastSwitchingSpeed •ComplementtoType2SC2334 APPLICATIONS •Developedforhigh-voltagehigh-speedswitching,andis idealforuseasadriverindevicessuchasswitchingregulators, DC/DCconverters,andhighfrequencypowerampli

Silicon PNP transistor in a TO-220 Plastic Package.

Descriptions SiliconPNPtransistorinaTO-220PlasticPackage. Features LowVCE(sat),fastswitchingspeed,complementarypairwith2SC2334. Applications Useforhighvoltagehighspeedswitching,foradriveindevicessuchasswitchingregulators,DC/DCconverters,highfrequencypow

POWER TRANSISTORS(1.5A,160V,25W)

1.5AMPEREPOWERTRANSISTORS160VOLTS25WATTS

PNP EPITAXIAL SILICON TRANSISTOR(LOW FREQUENCY POWER AMPLIFIER)

LOWFREQUENCYPOWERAMPLIFIER ●Complementto2SC2073

High-Voltage Switching, AF Power Amp, 100W Output Predriver Applications

High-VoltageSwitching,AFPowerAmp,100WOutputPredriverApplications

Silicon PNP Power Transistors

DESCRIPTION •WithTO-220package •Complementtotype2SC2344 APPLICATIONS •Highvoltageswitching, •Audiofrequencypoweramplifier; •100Woutputpredriverapplications

Silicon PNP Power Transistors

DESCRIPTION •WithTO-220package •Complementtotype2SC2344 APPLICATIONS •Highvoltageswitching, •Audiofrequencypoweramplifier; •100Woutputpredriverapplications

Silicon PNP Power Transistors

DESCRIPTION •WithTO-220package •Complementtotype2SC2344 APPLICATIONS •Highvoltageswitching, •Audiofrequencypoweramplifier; •100Woutputpredriverapplications

Silicon PNP Power Transistor

DESCRIPTION •LowCollectorSaturationVoltage-:VCE(satr-0.5V(Typ.)@lc=-0.5A •Collector-EmitterBreakdownVoltage-:V(BR)CEo=-160V(Min.) •ComplementtoType2SC2344 APPLICATIONS •Designedforhigh-voltageswitching,audiofrequencypoweramplifiers,100Woutputpredriverapplications

Silicon PNP transistor in a TO-220 Plastic Package.

Descriptions SiliconPNPtransistorinaTO-220PlasticPackage. Features Complementarypairwith2SC2344. Applications Highvoltageswitching,AFpoweramplifier,100Woutputpredriverapplications.

sc Silicon PNP Power Transistor

DESCRIPTION ·LowCollectorSaturationVoltage- :VCE(sat)=-0.5V(Typ.)@IC=-0.5A·Collector-EmitterBreakdownVoltage- :V(BR)CEO=-160V(Min.)·ComplementtoType2SC2344·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation APPLICATIONS ·Designedforhigh-

High-Voltage Switching, AF Power Amp,100W Output Predriver Applications

High-VoltageSwitching,AFPowerAmp,100WOutputPredriverApplications

POWER TRANSISTORS(5A,50V,25W)

5AMPERESPOWERTRANSISTORS50VOLTS25WATTS

TRANSISITOR (HIGH CURRENT SWITCHING APPLICATIONS)

HIGHCURRENTSWITCHINGAPPLICATIONS. ■FEATURES *Lowcollectorsaturationvoltage VCE(SAT)=-0.4V(max.)atIc=-3A *Highspeedswitchingtime:tS=1.0µs(Typ.) *Complementaryto2SC2562

HIGH CURRENT SWITCHING APPLICATION

FEATURES *LowCollectorSaturationVoltage VCE(SAT)=-0.4V(max.)AtIc=-3A *HighSpeedSwitchingTime:tS=1.0μs(Typ.) *ComplementaryTo2SC2562

isc Silicon PNP Power Transistor

DESCRIPTION ·LowCollectorSaturationVoltage :VCE(sat)=-0.4(V)(Max)@IC=-3A ·HighSwitchingSpeed ·ComplementtoType2SC2562 APPLICATIONS ·Designedforhighcurrentswitchingapplications.

Silicon PNP Power Transistors

DESCRIPTION ·WithTO-220package ·Complementtotype2SD2562 ·Lowsaturationvoltage ·Highspeedswitchingtime APPLICATIONS ·Highcurrentswitchingapplications

Silicon PNP Transistors

SiliconPNPTransistors ♦Features •WithTO-220package •Complementaryto2SC2562

PNP Plastic-Encapsulate Transistor

Features •Halogenfreeavailableuponrequestbyaddingsuffix-HF •MountingTorgue:5in-lbsMaximum •Capableof25WattsofPowerDissipation. •Collector-current-5.0AandCollector-baseVoltage-60V •Operatingandstoragejunctiontemperaturerange:-55°Cto+150°C •LeadFreeFinish

PNP Silicon Epitaxial Planar Transistor

PNPSiliconEpitaxialPlanarTransistor forhighcurrentswitchingapplications. Thetransistorissubdividedintotwogroup,OandY,accordingtoitsDCcurrentgain.

PNP Epitaxial Silicon Transistor

FEATURES ●LowCollectorSaturationVoltage. VCE(sat)=-0.4V(Max.)atIC=-3A ●Complementsthe2SC2562. ●HighSpeedSwitchingTime:tstg=1.0µs(Typ.)

TO-220-3L Plastic-Encapsulate Transistors

TRANSISTOR(PNP) FEATURES ●HighCurrentSwitchingApplications ●LowCollectorSaturationVoltage ●HighSpeedSwithingTime

Silicon PNP transistor in a TO-220 Plastic Package.

Descriptions SiliconPNPtransistorinaTO-220PlasticPackage. Features Lowcollectorsaturationvoltage,highspeedswitchingtime,complementaryto2SC2562. Applications Highcurrentswitchingapplications.