HIGH VOLTAGE GENERAL PURPOSE

DESCRIPTION The 2N790A is a silicon Planar Epitaxial NPN transistor in Jedec TO-18 metal case. It is suitable for a wide variety of amplifier and switching applications. ■ HIGH VOLTAGE GENERAL PURPOSE

NPN Silico n Low-Power 30V, 0.5A

This specification covers the performance requirements for NPN silicon, low-power, 2N718A, 2N1613 and 2N1613L transistors. Three levels of product assurance are provided (JAN, JANTX and JANTXV) for each device type as specified in MIL-PRF-19500/181. The device packages for the encapsulated device ty

HIGH VOLTAGE GENERAL PURPOSE

DESCRIPTION The 2N790A is a silicon Planar Epitaxial NPN transistor in Jedec TO-18 metal case. It is suitable for a wide variety of amplifier and switching applications. ■ HIGH VOLTAGE GENERAL PURPOSE

NPN SILICON PLANAR SWITCHING TRANSISTOR

NPN SILICON PLANAR SWITCHING TRANSISTOR TO-18 Metal Can Package

Small Signal Transistors

Small Signal Transistors TO-18 Case

HIGH VOLTAGE GENERAL PURPOSE

DESCRIPTION The 2N720A is a silicon planar epitaxial NPN transistor in Jedec TO-18 metal case. It is suitable for a wide variety of amplifier and switching applications.

NPN LOW POWER SILICON TRANSISTOR

NPN LOW POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/182

Small Signal Transistors

Small Signal Transistors TO-18 Case

JANTX, JANTXV POWER MOSFET IN TO-254AA PACKAGE

[Omnirel] DESCRIPTION This hermetically packaged QPL product features the latest advanced MOSFET and packaging technology. It is ideally suited for Military requirements where small size, high performance and high reliability are required, and in applications such as switching power suppli

HEXFET TRANSISTOR

100 Volt, 0.077 Ohm HEXFET The HEXFET® technology is the key to international Rectifiers advance line of power MOSFET transistors. The efficient geometry design achieves very low on-state resistance combined with high transconductance. FEATURES: ■ Repetitive Avalanche Rating ■ Isolated and Her

JANTX, JANTXV POWER MOSFET IN TO-254AA PACKAGE

[Omnirel] DESCRIPTION This hermetically packaged QPL product features the latest advanced MOSFET and packaging technology. It is ideally suited for Military requirements where small size, high performance and high reliability are required, and in applications such as switching power suppli

JANTX, JANTXV POWER MOSFET IN TO-254AA PACKAGE

[Omnirel] DESCRIPTION This hermetically packaged QPL product features the latest advanced MOSFET and packaging technology. It is ideally suited for Military requirements where small size, high performance and high reliability are required, and in applications such as switching power suppli

JANTX, JANTXV POWER MOSFET IN TO-254AA PACKAGE

[Omnirel] DESCRIPTION This hermetically packaged QPL product features the latest advanced MOSFET and packaging technology. It is ideally suited for Military requirements where small size, high performance and high reliability are required, and in applications such as switching power suppli

REPETITIVE AVALANCHE RATED AND dv/dt RATED

REPETITIVE AVALANCHE RATED AND dv/dt RATED HEXFET TRNANSISTOR 100 Volt, 0.07 Ohm HEXFET

HERMETIC POWER MOSFET N-CHANNEL

FEATURES: ● 100 Volt, 0.07 Ohm MOSFET ● Isolated and Hermetically Sealed ● Simple Drive Requirements ● Repetitive Avalanche Rating

N-CHANNEL MOSFET

DESCRIPTION This family of switching transistors is military qualified up to the JANTXV level for high reliability applications. These devices are also available in a low profile U surface mount package. Microsemi also offers numerous other transistor products to meet higher and lower power ratin

N-CHANNEL MOSFET

DESCRIPTION This family of switching transistors is military qualified up to the JANTXV level for high reliability applications. These devices are also available in a low profile U surface mount package. Microsemi also offers numerous other transistor products to meet higher and lower power ratin

N-CHANNEL MOSFET

DESCRIPTION This family of switching transistors is military qualified up to the JANTXV level for high reliability applications. These devices are also available in a low profile U surface mount package. Microsemi also offers numerous other transistor products to meet higher and lower power ratin

HERMETIC POWER MOSFET N-CHANNEL

DESCRIPTION: 200 VOLT, 0.105 OHM, 27.4 A MOSFET IN A HERMETIC TO-254 PACKAGE. (add suffix S for up-screening to JTX Level – 2N7225S)

N-CHANNEL MOSFET

DESCRIPTION This family of switching transistors is military qualified up to the JANTXV level for high reliability applications. These devices are also available in a low profile U surface mount package. Microsemi also offers numerous other transistor products to meet higher and lower power ratin

N?밅HANNEL POWER MOSFET

FEATURES • HERMETICALLY SEALED SURFACE MOUNT PACKAGE • SMALL FOOTPRINT – EFFICIENT USE OF PCB SPACE. • SIMPLE DRIVE REQUIREMENTS • LIGHTWEIGHT • HIGH PACKING DENSITIES

JEDEC REGISTERED N - CHANNEL HIGH VOLTAGE POWER MOSFETS

POWER MOS IV™ JEDEC REGISTERED N - CHANNEL HIGH VOLTAGE POWER MOSFETS

N-CHANNEL MOSFET

DESCRIPTION This family of switching transistors is military qualified up to the JANTXV level for high reliability applications. These devices are also available in a low profile U surface mount package. Microsemi also offers numerous other transistor products to meet higher and lower power ratin

N-CHANNEL MOSFET

DESCRIPTION This family of switching transistors is military qualified up to the JANTXV level for high reliability applications. These devices are also available in a low profile U surface mount package. Microsemi also offers numerous other transistor products to meet higher and lower power ratin

N-CHANNEL MOSFET

DESCRIPTION This family of switching transistors is military qualified up to the JANTXV level for high reliability applications. These devices are also available in a low profile U surface mount package. Microsemi also offers numerous other transistor products to meet higher and lower power ratin

JEDEC REGISTERED N - CHANNEL HIGH VOLTAGE POWER MOSFETS

POWER MOS IV™ JEDEC REGISTERED N - CHANNEL HIGH VOLTAGE POWER MOSFETS

N-CHANNEL MOSFET

DESCRIPTION This family of switching transistors is military qualified up to the JANTXV level for high reliability applications. These devices are also available in a low profile U surface mount package. Microsemi also offers numerous other transistor products to meet higher and lower power ratin

Small Signal Transistors

Small Signal Transistors TO-18 Case

HERMETIC POWER MOSFET P-CHANNEL

HERMETIC POWER MOSFET P-CHANNEL FEATURES: -100 Volt, 0.20 Ohm MOSFET œ Isolated and Hermetically Sealed œ Simple Drive Requirements œ Repetitive Avalanche Rating

P-CHANNEL MOSFET

P-CHANNEL MOSFET Qualified per MIL-PRF-19500/595

P-CHANNEL MOSFET

P-CHANNEL MOSFET Qualified per MIL-PRF-19500/595

Small Signal Transistors

Small Signal Transistors TO-18 Case

Small Signal Transistors

Small Signal Transistors TO-18 Case

Radiation Hardened N-Channel Power MOSFETs

Description The Harris Semiconductor Sector has designed a series of SECOND GENERATION hardened power MOSFETs of both N and P channel enhancement types with ratings from 100V to 500V, 1A to 60A, and on resistance as low as 25mΩ. Features • 9A, 250V, RDS(on) = 0.415Ω • Second Generation Rad Har

Radiation Hardened N-Channel Power MOSFETs

Description The Harris Semiconductor Sector has designed a series of SECOND GENERATION hardened power MOSFETs of both N and P channel enhancement types with ratings from 100V to 500V, 1A to 60A, and on resistance as low as 25mΩ. Features • 9A, 250V, RDS(on) = 0.415Ω • Second Generation Rad Har

isc N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 20A@ TC=25℃ · Drain Source Voltage -VDSS= 250V(Min) · Static Drain-Source On-Resistance -RDS(on) = 0.17Ω(Max)@VGS= 10V DESCRIPTION · Switching regulators, Switching converters, Motordrivers, and Relay drivers

GERMANIUM PNP TRANSISTORS

文件：2.44311 Mbytes Page：6 Pages

EPITAXIAL PLANAR NPN

文件：53.47 Kbytes Page：4 Pages

封装/外壳：TO-206AA，TO-18-3 金属罐 包装：剪切带（CT） 描述：TRANS NPN 80V 0.5A TO18 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

封装/外壳：TO-206AA，TO-18-3 金属罐 包装：散装 描述：TRANS NPN 80V 0.5A TO18 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

Through-Hole Transistor-Small Signal (<=1A) NPN General Purpose Amplifier/Switch

Trans GP BJT NPN 80V 0.5A 3-Pin TO-18

EPITAXIAL PLANAR NPN

文件：53.47 Kbytes Page：4 Pages

Silicon NPN Transistor

文件：307.26 Kbytes Page：2 Pages

SI PNP LO-PWR BJT

文件：66.81 Kbytes Page：1 Pages

Medium Current General Purpose Amplifiers and Switches

文件：777.48 Kbytes Page：12 Pages

N-CHANNEL POWER MOSFET

文件：621.05 Kbytes Page：3 Pages

N-CHANNEL POWER MOSFET

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Bipolar NPN Device in a Hermetically sealed TO18 Metal Package

文件：10.35 Kbytes Page：1 Pages

Medium Current General Purpose Amplifiers and Switches

文件：777.48 Kbytes Page：12 Pages

N-CHANNEL POWER MOSFET

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N-CHANNEL MOSFET

文件：950.41 Kbytes Page：9 Pages

N-CHANNEL MOSFET Qualified per MIL-PRF-19500/592

文件：950.41 Kbytes Page：9 Pages

1500 WATT BIDIRECTIONAL TRANSIENT VOLTAGE SUPPESSOR Qualified per MIL-PRF-19500/507

文件：534.62 Kbytes Page：7 Pages

1500 WATT BIDIRECTIONAL TRANSIENT VOLTAGE SUPPESSOR Qualified per MIL-PRF-19500/507

文件：534.62 Kbytes Page：7 Pages

1500 WATT BIDIRECTIONAL TRANSIENT VOLTAGE SUPPESSOR Qualified per MIL-PRF-19500/507

文件：534.62 Kbytes Page：7 Pages

1500 WATT BIDIRECTIONAL TRANSIENT VOLTAGE SUPPESSOR Qualified per MIL-PRF-19500/507

文件：534.62 Kbytes Page：7 Pages

1500 WATT BIDIRECTIONAL TRANSIENT VOLTAGE SUPPESSOR Qualified per MIL-PRF-19500/507

文件：534.62 Kbytes Page：7 Pages

1500 WATT BIDIRECTIONAL TRANSIENT VOLTAGE SUPPESSOR Qualified per MIL-PRF-19500/507

文件：534.62 Kbytes Page：7 Pages

1500 WATT BIDIRECTIONAL TRANSIENT VOLTAGE SUPPESSOR Qualified per MIL-PRF-19500/507

文件：534.62 Kbytes Page：7 Pages