| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
2N7236 | P-CHANNEL MOSFET P-CHANNEL MOSFET Qualified per MIL-PRF-19500/595 | MICROSEMI 美高森美 |   | |
2N7236 | HERMETIC POWER MOSFET P-CHANNEL HERMETIC POWER MOSFET P-CHANNEL FEATURES: -100 Volt, 0.20 Ohm MOSFET Isolated and Hermetically Sealed Simple Drive Requirements Repetitive Avalanche Rating | SENSITRON | | |
2N7236 | P-CHANNEL MOSFET | MICROCHIP 微芯科技 | | |
2N7236 | HERMETIC POWER MOSFET PCH | SENSITRON | | |
2N7236 | Trans MOSFET P-CH 100V 18A 3-Pin(3+Tab) TO-254 | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | |
2N7236 | P-CHANNEL MOSFET 文件：135.84 Kbytes Page：4 Pages | MICROSEMI 美高森美 | | |
P-CHANNEL MOSFET P-CHANNEL MOSFET Qualified per MIL-PRF-19500/595 | MICROSEMI 美高森美 | | ||
P-CHANNEL MOSFET 文件：135.84 Kbytes Page：4 Pages | MICROSEMI 美高森美 | | ||
HERMETIC POWER MOSFET P-CHANNEL 文件：68.48 Kbytes Page：3 Pages | SENSITRON | | ||
P-CHANNEL MOSFET 文件：135.84 Kbytes Page：4 Pages | MICROSEMI 美高森美 | | ||
POWER MOSFET THRU-HOLE (TO-254AA) HEXFET® MOSFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry design achieves very low on-state resistance combined with high transconductance. HEXFET transistors also feature all of the well-established advantages of MOSFETs, s | IRF | | ||
POWER MOSFET SURFACE MOUNT (SMD-1) HEXFET® MOSFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry design achieves very low on-state resistance combined with high transconductance. HEXFET transistors also feature all of the well-established advantages of MOSFETs, s | IRF | | ||
POWER MOSFET THRU-HOLE (TO-254AA) HEXFET® MOSFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry design achieves very low on-state resistance combined with high transconductance. HEXFET transistors also feature all of the well-established advantages of MOSFETs, s | IRF | | ||
POWER MOSFET SURFACE MOUNT (SMD-1) HEXFET® MOSFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry design achieves very low on-state resistance combined with high transconductance. HEXFET transistors also feature all of the well-established advantages of MOSFETs, s | IRF | | ||
POWER MOSFET THRU-HOLE (TO-254AA) HEXFET® MOSFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry design achieves very low on-state resistance combined with high transconductance. HEXFET transistors also feature all of the well-established advantages of MOSFETs, s | IRF | |
2N7236产品属性
- 类型
描述
- Minimum Operating Temperature：
-55°C
- Maximum Power Dissipation：
4000mW
- Maximum Operating Temperature：
150°C
- Maximum Gate Source Voltage：
±20V
- Maximum Drain Source Voltage：
100V
- Maximum Continuous Drain Current：
18A
- Configuration：
Single
- Channel Type：
P
- Category：
Power MOSFET
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IR |
专业铁帽 |
TO-254 |
67500 |
铁帽原装主营-可开原型号增税票 |
|||
JANTX |
24+ |
SMD-1 |
200 |
进口原装正品优势供应 |
|||
原厂 |
2540+ |
TO-220 |
6852 |
只做原装正品假一赔十为客户做到零风险!! |
|||
IR |
24+ |
SMD |
10 |
“芯达集团”专营军工百分之百原装进口 |
|||
IR |
25+23+ |
BGA |
19827 |
绝对原装正品全新进口深圳现货 |
|||
IR |
24+ |
DIP |
9 |
||||
JANTX |
QQ咨询 |
NA |
886 |
全新原装 研究所指定供货商 |
|||
IR |
24+ |
DIP |
3000 |
全新原装现货 优势库存 |
|||
JANTX |
NA |
69 |
全新 发货1-2天 |
||||
IR |
2019+ |
SMD |
6992 |
原厂渠道 可含税出货 |
2N7236规格书下载地址
2N7236参数引脚图相关
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2N7236数据表相关新闻
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瀚佳科技（深圳）有限公司 专业进口电子元器件代理商
2019-11-8
DdatasheetPDF页码索引
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