P.CHANNEL POWER MOSFETs

文件：24.99 Kbytes Page：2 Pages

POWER MOSFET P-CHANNEL(BVdss=-100V, Rds(on)=0.30ohm, Id=-6.5A)

REPETITIVE AVALANCHE AND dv/dt RATED HEXFET ®TRANSISTORS THRU-HOLE - TO-205AF (TO-39) The HEXFET®technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry and unique processing of this latest “State of the Art” design achieves: very low

POWER MOSFET P-CHANNEL(BVdss=-100V, Rds(on)=0.30ohm, Id=-6.5A)

REPETITIVE AVALANCHE AND dv/dt RATED HEXFET ®TRANSISTORS THRU-HOLE - TO-205AF (TO-39) The HEXFET®technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry and unique processing of this latest “State of the Art” design achieves: very low

POWER MOSFET P-CHANNEL(BVdss=-100V, Rds(on)=0.30ohm, Id=-6.5A)

REPETITIVE AVALANCHE AND dv/dt RATED HEXFET ®TRANSISTORS THRU-HOLE - TO-205AF (TO-39) The HEXFET®technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry and unique processing of this latest “State of the Art” design achieves: very low

REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTOR

REPETITIVE AVALANCHE AND dv/dt RATED HEXFET® TRANSISTOR The leadless chip carrier (LCC) package represents the logical next step in the continual evolution of surface mount technology. Desinged to be a close replacement for the TO-39 package, the LCC will give designers the extra flexibility the