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型号 功能描述 生产厂家 企业 LOGO 操作

POWER MOSFET P-CHANNEL(BVdss=-100V, Rds(on)=0.60ohm, Id=-4.0A)

REPETITIVE AVALANCHE AND dv/dt RATED HEXFET® TRANSISTORS THRU-HOLE (100V, P-CHANNEL) The HEXFET® technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry and unique processing of this latest “State of the Art” design achieves: ver

IRF

P-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS

文件:42.42 Kbytes Page:2 Pages

SEME-LAB

POWER MOSFET P-CHANNEL(BVdss=-100V, Rds(on)=0.60ohm, Id=-4.0A)

REPETITIVE AVALANCHE AND dv/dt RATED HEXFET® TRANSISTORS THRU-HOLE (100V, P-CHANNEL) The HEXFET® technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry and unique processing of this latest “State of the Art” design achieves: ver

IRF

POWER MOSFET P-CHANNEL(BVdss=-100V, Rds(on)=0.60ohm, Id=-4.0A)

REPETITIVE AVALANCHE AND dv/dt RATED HEXFET® TRANSISTORS THRU-HOLE (100V, P-CHANNEL) The HEXFET® technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry and unique processing of this latest “State of the Art” design achieves: ver

IRF

Repetitive Avalanche Ratings

文件:133.98 Kbytes Page:7 Pages

IRF

2N6845UJANTX产品属性

  • 类型

    描述

  • 型号

    2N6845UJANTX

  • 制造商

    International Rectifier

  • 功能描述

    Trans MOSFET P-CH 100V 3.5A 18-Pin LLCC

更新时间:2026-8-3 20:53:02
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
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