P-CHANNEL MOSFET

DESCRIPTION This 2N6804 switching transistor is military qualified up to the JANTXV level for high-reliability applications. Microsemi also offers numerous other transistor products to meet higher and lower power ratings with various switching speed requirements in both through-hole and surface

High-Reliability Transistors

\"This 2N6804 switching transistor is military qualified up to the JANTXV level for high-reliability applications.  Microsemi also offers numerous other transistor products to meet higher and lower power ratings with various switching speed requirements in both through-hole and surface-mount package

High-Reliability Transistors

\"This 2N6804 switching transistor is RoHS compliant for commercial applications.  Microsemi also offers numerous other transistor products to meet higher and lower power ratings with various switching speed requirements in both through-hole and surface-mount packages.\"  ROHS, PB Free

This 2N6804 switching transistor is military qualified up to the JANTXV level for high-reliability applications.

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TRANSISTORS P-CHANNEL(Vdss=-100V, Rds(on)=0.30ohm, Id=-11A)

Product Summary The HEXFETtechnology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry and unique processing of this latest “State of the Art” design achieves: very low on-state resistance combined with high transconductance; superior rever

POWER MOSFET P-CHANNEL(BVdss=-100V, Rds(on)=0.30ohm, Id=-11A)

Product Summary The HEXFETtechnology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry and unique processing of this latest “State of the Art” design achieves: very low on-state resistance combined with high transconductance; superior rever

TRANSISTORS P-CHANNEL(Vdss=-100V, Rds(on)=0.30ohm, Id=-11A)

Product Summary The HEXFETtechnology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry and unique processing of this latest “State of the Art” design achieves: very low on-state resistance combined with high transconductance; superior rever

POWER MOSFET P-CHANNEL(BVdss=-100V, Rds(on)=0.30ohm, Id=-11A)

Product Summary The HEXFETtechnology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry and unique processing of this latest “State of the Art” design achieves: very low on-state resistance combined with high transconductance; superior rever