N-CHANNEL MOSFET

N-CHANNEL MOSFET Qualified per MIL-PRF-19500/555

POWER MOSFET N-CHANNEL(BVdss=100V, Rds(on)=0.30ohm, Id=6.0A)

Description The HEXFET® technology is the key to International Rectifier’s HiRel advanced line of power MOSFET transistors. The efficient geometry and unique processing of this latest “State of the Art” design achieves: very low on state resistance combined with high trans conductance. The HEXFE

N-CHANNEL POWER MOSFETS

N-CHANNEL POWER MOSFETs

Single channel high reliability power MOSFETs

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N-CHANNEL POWER MOSFET ENHANCEMENT MODE

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High-Reliability Transistors

\"These 2N6788U and 2N6790U devices are military qualified up to a JANTXV level for high-reliability applications. Microsemi also offers numerous other products to meet higher and lower power voltage regulation applications.\"

N-CHANNEL MOSFET

N-CHANNEL MOSFET Qualified per MIL-PRF-19500/555

MOSFETs and JFETs

N-Channel MOSFET

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N-CHANNEL POWER MOSFET ENHANCEMENT MODE

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POWER MOSFET N-CHANNEL(BVdss=100V, Rds(on)=0.30ohm, Id=6.0A)

Description The HEXFET® technology is the key to International Rectifier’s HiRel advanced line of power MOSFET transistors. The efficient geometry and unique processing of this latest “State of the Art” design achieves: very low on state resistance combined with high trans conductance. The HEXFE

HEXFET TRANSISTORS SURFACE MOUNT (LCC-18)

REPETITIVE AVALANCHE AND dv/dt RATED HEXFETTRANSISTORS SURFACE MOUNT (LCC-18) The leadless chip carrier (LCC) package represents the logical next step in the continual evolution of surface mount technology. Desinged to be a close replacement for the TO-39 package, the LCC will give designers the

POWER MOSFET N-CHANNEL(BVdss=100V, Rds(on)=0.30ohm, Id=6.0A)

Description The HEXFET® technology is the key to International Rectifier’s HiRel advanced line of power MOSFET transistors. The efficient geometry and unique processing of this latest “State of the Art” design achieves: very low on state resistance combined with high trans conductance. The HEXFE