2N672晶体管资料
2N672别名：2N672三极管、2N672晶体管、2N672晶体三极管
2N672生产厂家：美国空间功率电子学公司_SSI
2N672制作材料：Ge-PNP
2N672性质：低频或音频放大 （LF）_开关管 （S）_CHOPPER
2N672封装形式：直插封装
2N672极限工作电压：25V
2N672最大电流允许值：2A
2N672最大工作频率：<1MHZ或未知
2N672引脚数：3
2N672最大耗散功率：0.3W
2N672放大倍数：
2N672图片代号：D-9
2N672vtest：25
2N672htest：999900
- 2N672atest：2
2N672wtest：0.3
2N672代换 2N672用什么型号代替：AC128,AC153,AC193,2N3427,2N3428,3AK61,3AD51B,
2N672价格
参考价格：￥0.0000
型号：2N6723 品牌：Plessey 备注：这里有2N672多少钱，2026年最近7天走势，今日出价，今日竞价，2N672批发/采购报价，2N672行情走势销售排行榜，2N672报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
丝印代码：2N6727；TO-92 Plastic-Encapsulate Transistors Features General Purpose Switching Application | DGNJDZ 南晶电子 |   | ||
丝印代码：2N6727；TO-92 Plastic-Encapsulate Transistors Features General Purpose Switching Application | DGNJDZ 南晶电子 | | ||
NPN SILICON PLANAR MEDIUM POWER DARLINGTON TRANSISTORS FEATURES * 50 Volt VCEO * Gain of 15k at IC = 0.5 Amp * Ptot=1 Watt | ZETEX | | ||
NPN SILICON DARLINGTON POWER TRANSISTOR NPN SILICON DARLINGTON POWER TRANSISTOR TO-237 CASE | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | ||
NPN SILICON DARLINGTON POWER TRANSISTOR NPN SILICON DARLINGTON POWER TRANSISTOR TO-237 CASE | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | ||
TO-237 NPN SILICON DARLINGTON POWER TRANSISTOR TO-237 CASE | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | ||
NPN SILICON PLANAR MEDIUM POWER DARLINGTON TRANSISTORS FEATURES * 50 Volt VCEO * Gain of 15k at IC = 0.5 Amp * Ptot=1 Watt | ZETEX | | ||
PNP SILICON PLANAR MEDIUM POWER TRANSISTORS FEATURES * 40 Volt VCEO * Gain of 50 at IC = 1 Amp * Ptot=1 Watt | ZETEX | | ||
PNP SILICON PLANAR EPITAXIALTRANSISTOR PNP SILICON PLANAR EPITAXIALTRANSISTOR General Purpose Medium Power Amplifier TO-237 Plastic Package | CDIL | | ||
COMPLEMENTARY SILICON POWER TRANSISTOR DESCRIPTION The CENTRAL SEMICONDUCTOR 2N6714, 2N6726 series types are complementary Silicon Plastic Power Transistors designed for general purpose power amplifier and switching applications. | CENTRAL | | ||
PNP SILICON PLANAR TRANSISTORS FEATURES * 40 Volt VCEO * Gain of 50 at IC = 1 Amp * Ptot=1 Watt | DIODES 美台半导体 | | ||
COMPLEMENTARY SILICON POWER TRANSISTOR COMPLEMENTARY SILICON POWER TRANSISTOR TO-237 | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | ||
PNP SILICON PLANAR TRANSISTORS FEATURES * 40 Volt VCEO * Gain of 50 at IC = 1 Amp * Ptot=1 Watt | DIODES 美台半导体 | | ||
TO-92 Plastic-Encapsulate Transistors TRANSISTOR (PNP) FEATURES ● General Purpose Switching Application | JIANGSU 长电科技 | | ||
SI PNP POWER BJT COMPLEMENTARY SILICON POWER TRANSISTOR TO-237 | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | ||
PNP SILICON PLANAR TRANSISTORS FEATURES * 40 Volt VCEO * Gain of 50 at IC = 1 Amp * Ptot=1 Watt | DIODES 美台半导体 | | ||
COMPLEMENTARY SILICON POWER TRANSISTOR DESCRIPTION The CENTRAL SEMICONDUCTOR 2N6714, 2N6726 series types are complementary Silicon Plastic Power Transistors designed for general purpose power amplifier and switching applications. | CENTRAL | | ||
PNP SILICON PLANAR MEDIUM POWER TRANSISTORS FEATURES * 40 Volt VCEO * Gain of 50 at IC = 1 Amp * Ptot=1 Watt | ZETEX | | ||
PNP SILICON PLANAR EPITAXIAL TRANSISTOR PNP SILICON PLANAR EPITAXIAL TRANSISTOR General Purpose Medium Power Amplifier | CDIL | | ||
COMPLEMENTARY SILICON POWER TRANSISTOR COMPLEMENTARY SILICON POWER TRANSISTOR TO-237 | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | ||
PNP Plastic Encapsulated Transistor FEATURES • General Purpose Switching Application | SECOS 喜可士 | | ||
TRANSISTOR (PNP) FEATURES Power dissipation PCM : 1 W(Tamb=25℃) Collector current ICM : -1.5 A Collector-base voltage V(BR)CBO : -50 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃ | WINNERJOIN 永而佳 | | ||
Amplifiers & Switches Amplifiers & Switches Bipolar: General Purpose | AMMSEMI | | ||
Plastic-Encapsulated Transistors TRANSISTOR (PNP) FEATURES Power dissipation PCM : 1 W(Tamb=25℃) Collector current ICM : -1.5 A Collector-base voltage V(BR)CBO : -50 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃ | TEL | | ||
PNP SILICON PLANAR MEDIUM POWER TRANSISTORS FEATURES * 100 Volt VCEO * Gain of 20 at IC = 0.5 Amp * Ptot=1 Watt | ZETEX | | ||
NPN SILICON PLANAR EPITAXIAL TRANSISTOR NPN SILICON PLANAR EPITAXIAL TRANSISTOR General Purpose Medium Power Amplifier | CDIL | | ||
PNP SILICON PLANAR MEDIUM POWER TRANSISTORS FEATURES * 100 Volt VCEO * Gain of 20 at IC = 0.5 Amp * Ptot=1 Watt | DIODES 美台半导体 | | ||
COMPLEMENTARY SILICON COMPLEMENTARY SILICON POWER TRANSISTORS 2N6716, 2N6728 Series types are Complementary Silicon Plastic Power Transistors designed for general purpose power amplifier and switching applications. | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | ||
COMPLEMENTARY SILICON COMPLEMENTARY SILICON POWER TRANSISTORS 2N6716, 2N6728 Series types are Complementary Silicon Plastic Power Transistors designed for general purpose power amplifier and switching applications. | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | ||
PNP SILICON PLANAR MEDIUM POWER TRANSISTORS FEATURES * 100 Volt VCEO * Gain of 20 at IC = 0.5 Amp * Ptot=1 Watt | DIODES 美台半导体 | | ||
PNP SILICON PLANAR MEDIUM POWER TRANSISTORS FEATURES * 100 Volt VCEO * Gain of 20 at IC = 0.5 Amp * Ptot=1 Watt | ZETEX | | ||
Power Transistors 文件：50.69 Kbytes Page：1 Pages | CENTRAL | | ||
Power Transistors 文件：50.69 Kbytes Page：1 Pages | CENTRAL | | ||
Power Transistors 文件：50.69 Kbytes Page：1 Pages | CENTRAL | | ||
Power Transistors 文件：50.69 Kbytes Page：1 Pages | CENTRAL | | ||
Power Transistors 文件：50.69 Kbytes Page：1 Pages | CENTRAL | | ||
NPN SILICON PLANAR MEDIUM POWER DARLINGTON TRANSISTORS 文件：41.43 Kbytes Page：1 Pages | DIODES 美台半导体 | | ||
TRANS NPN DARL 40V 1 AMP TO-237 | ONSEMI 安森美半导体 | | ||
封装/外壳：TO-237AA 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS NPN DARL 40V 2A TO237 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 | CENTRAL | | ||
NPN SILICON PLANAR MEDIUM POWER DARLINGTON TRANSISTORS 文件：41.43 Kbytes Page：1 Pages | DIODES 美台半导体 | | ||
NPN SILICON PLANAR MEDIUM POWER DARLINGTON TRANSISTORS 文件：41.43 Kbytes Page：1 Pages | DIODES 美台半导体 | | ||
Power Transistors 文件：50.69 Kbytes Page：1 Pages | CENTRAL | | ||
NPN SILICON POWER DARLINGTON | ONSEMI 安森美半导体 | | ||
NPN Darlington Transistor | DIODES 美台半导体 | | ||
封装/外壳：TO-237AA 包装：管件 描述：TRANS NPN DARL 50V 1A TO237 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 | ONSEMI 安森美半导体 | | ||
PNP Plastic Encapsulated Transistor 文件：83.23 Kbytes Page：1 Pages | SECOS 喜可士 | | ||
PNP Plastic Encapsulated Transistor 文件：83.23 Kbytes Page：1 Pages | SECOS 喜可士 | | ||
PNP SILICON PLANAR MEDIUM POWER TRANSISTORS 文件：28.3 Kbytes Page：1 Pages | ETCList of Unclassifed Manufacturers 未分类制造商 | | ||
PNP SILICON PLANAR MEDIUM POWER TRANSISTORS 文件：28.3 Kbytes Page：1 Pages | ETCList of Unclassifed Manufacturers 未分类制造商 | | ||
PNP SILICON PLANAR EPITAXIAL TRANSISTOR 文件：193.6 Kbytes Page：3 Pages | CDIL | |
2N672产品属性
- 类型
描述
- PCM(W)：
1
- IC(A)：
1.5
- VCBO(V)：
50
- VCEO(V)：
40
- VEBO(V)：
5
- hFEMin：
50
- hFEMax：
250
- hFE@VCE(V)：
1
- hFE@IC(A)：
1
- VCE(sat)(V)：
0.5
- VCE(sat)\u001E@IC(A)：
1
- VCE(sat)\u001E@IB(A)：
0.1
- Package：
TO-92
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
onsemi |
25+ |
TO-237 |
18746 |
样件支持,可原厂排单订货! |
|||
onsemi |
25+ |
TO-237 |
18798 |
正规渠道,免费送样。支持账期,BOM一站式配齐 |
|||
NATIONAL |
24+/25+ |
257 |
原装正品现货库存价优 |
||||
CJ/长电 |
25+ |
TO-92 |
20000 |
原装 |
|||
NS/美国国半 |
2450+ |
TO92 |
8850 |
只做原装正品假一赔十为客户做到零风险!! |
|||
CJ/长电 |
21+ |
TO-92 |
30000 |
百域芯优势 实单必成 可开13点增值税发票 |
|||
长电 |
25+23+ |
TO-92 |
24599 |
绝对原装正品全新进口深圳现货 |
|||
PNPEBC |
24+ |
TO-92 |
50000 |
||||
长电 |
22+ |
TO-92 |
20000 |
公司只有原装 品质保证 |
|||
CJ/长电 |
26+ |
原厂原封装 |
86720 |
全新原装正品价格最实惠 假一赔百 |
2N672规格书下载地址
2N672参数引脚图相关
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2019-2-18
DdatasheetPDF页码索引
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