位置：首页 > IC中文资料第193页 > 2N6716STOB
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
NPN SILICON PLANAR MEDIUM POWER TRANSISTORS FEATURES * 100 Volt VCEO * Gain of 20 at IC = 0.5 Amp * Ptot=1 Watt | ZETEX |   | ||
NPN SILICON PLANAR EPITAXIAL TRANSISTORS NPN SILICON PLANAR EPITAXIAL TRANSISTORS Designed for General purpose Medium Power Amplifier and Switching Circuits. | BOCA 博卡 | | ||
NPN SILICON PLANAR EPITAXIAL TRANSISTORS NPN SILICON PLANAR EPITAXIAL TRANSISTORS Designed for General purpose Medium Power Amplifier and Switching Circuits. | CDIL | | ||
NPN Plastic Encapsulated Transistor FEATURES • High Voltage： VCEO = 100V • Gain of 20 @ IC = 0.5A | SECOS 喜可士 | | ||
Power Transistors 文件：50.69 Kbytes Page：1 Pages | CENTRAL | |
2N6716STOB产品属性
- 类型
描述
- 型号
2N6716STOB
- 功能描述
两极晶体管 - BJT -
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
PNP 集电极—基极电压
- VCBO
集电极—发射极最大电压
- VCEO
- 40 V 发射极 - 基极电压
- VEBO
- 6 V
- 增益带宽产品fT
直流集电极/Base Gain hfe
- Min
100 A
- 安装风格
SMD/SMT
- 封装/箱体
PowerFLAT 2 x 2
2N6716STOB芯片相关品牌
2N6716STOB规格书下载地址
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2019-2-18
DdatasheetPDF页码索引
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